A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.
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1. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming a first conductivity-type semiconductor layer on a substrate;
forming an active layer on the first conductivity-type semiconductor layer;
forming a mask layer having an opening on the active layer;
growing a second conductivity-type semiconductor layer through the opening;
removing the mask layer;
removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and
removing a portion of the first conductivity-type semiconductor layer to expose the substrate.
12. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming a first conductivity-type semiconductor layer and an active layer in order on a substrate;
forming a mask layer having openings on the active layer;
forming a light emitting structure including the first conductivity-type semiconductor layer, the active layer, and a second conductivity-type semiconductor layer by growing the second conductivity-type semiconductor layer on the active layer through the openings;
removing the mask layer;
forming mesa structures by removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer of the light emitting structure;
separating the light emitting structure into individual chip units by removing a portion of the first conductivity-type semiconductor layer to expose the substrate; and
cutting the substrate into individual chip units.
2. The method as claimed in
wherein the second conductivity-type semiconductor layer is formed on the capping layer through the opening.
3. The method as claimed in
4. The method as claimed in
5. The method as claimed in
6. The method as claimed in
7. The method as claimed in
10. The method as claimed in
11. The method as claimed in
13. The method as claimed in
wherein forming the light emitting structure includes growing the second conductivity-type semiconductor layer through a selective epitaxial growth process from the capping layer through the openings.
14. The method as claimed in
forming an insulating layer covering the light emitting structure and the substrate;
exposing the first and second conductivity-type semiconductor layers by removing a portion of the insulating layer; and
forming first and second contact electrodes on the first and second conductivity-type semiconductor layers exposed through the portion of the insulating layer, respectively.
15. The method as claimed in
16. The method as claimed in
17. The method as claimed in
18. The method as claimed in
19. The method as claimed in
20. The method as claimed in
the openings are formed through a wet etching process, and
the mesa structures are formed through a dry etching process.
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This is a continuation application based on application Ser. No. 16/571,741, filed Sep. 16, 2019, the entire contents of which is hereby incorporated by reference.
Korean Patent Application No. 10-2019-0030722, filed on Mar. 18, 2019, in the Korean Intellectual Property Office, and entitled: “Semiconductor Light Emitting Device and Method of Manufacturing the Same,” is incorporated by reference herein in its entirety.
Example embodiments relate to a semiconductor light emitting device and a method of manufacturing the same.
A semiconductor light emitting device has a long lifespan, low power consumption, high response speeds, eco-friendliness, and the like, and has been considered as an important light source in a variety of products, e.g., a lighting device, a display device, and the like. A general display device includes a display panel including a liquid crystal display (LCD) and a backlight including a semiconductor light emitting device. Recently, a display device has been designed to use semiconductor light emitting devices as pixels that does not require a backlight.
According to an example embodiment, a semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer covering a portion of the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor layer covering a portion of the active layer. Sidewalls of the second conductivity-type semiconductor layer are spaced apart from sidewalls of the active layer along a horizontal direction.
According to an example embodiment, a semiconductor light emitting device includes a first conductivity-type semiconductor layer; an active layer on the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor layer on the active layer. A surface area of a lower surface of the second conductivity-type semiconductor layer is smaller than a surface area of an upper surface of the active layer.
According to an example embodiment, a method of manufacturing a semiconductor light emitting device includes forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor layer on a portion of the active layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer not overlapping with the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.
Features will become apparent to those of skill in the art by describing in detail exemplary embodiments with reference to the attached drawings in which:
Referring to
The substrate 101 may be an insulating substrate, e.g., sapphire. In an implementation, the substrate 101 may also be a conductive substrate or a semiconductor substrate. For example, the substrate 101 may be one of SiC, Si, MgAl2O4, MgO, LiAlO2, LiGaO2, GaN, and the like. The substrate 101 may include a plurality of serrated structures that may improve emitting efficiency of the semiconductor light emitting device 10.
A buffer layer 105 may be between the substrate 101 and the first conductivity-type semiconductor layer 113. The buffer layer 105 may be InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1). For example, the buffer layer 105 may be formed of GaN, AlN, AlGaN, InGaN, alloys thereof, and the like. The buffer layer 105 may have a structure in which a plurality of distinct layers are combined or a structure in which a composition gradually changes. The buffer layer 105 may reduce a difference in lattice constants between the substrate 101 and the first conductivity-type semiconductor layer 113 such that a lattice defect of the first conductivity-type semiconductor layer 113 may be reduced
The first conductivity-type semiconductor layer 113 may have a nitride semiconductor layer satisfying InxAlyGa1-x-yN (0≤x<1, 0≤y<1, 0≤x+y<1). The first conductivity-type semiconductor layer 113 may include n-type impurities (dopant). For example, the first conductivity-type semiconductor layer 113 may include n-type GaN. As an example, the first conductivity-type semiconductor layer 113 may be implemented as a single layer structure, but may also have a multilayer structure including layers having different compositions.
The active layer 115 may have a multi-quantum-well MQW structure in which a quantum well layer and a quantum barrier layer are alternately layered. For example, the quantum well layer and the quantum barrier layer may be InxAlyGa1-x-yN (0≤x<1, 0≤y<1, 0≤x+y<1), and compositions thereof may be different from each other. For example, the quantum well layer may be InxGa1-xN (0<x≤1), and the quantum barrier layer may be GaN or AlGaN. Thicknesses of the quantum well layer and the quantum barrier layer may be within a range of 1 nm to 50 nm. In an implementation, the active layer 115 may be a single quantum well structure.
The capping layer 116 between the second conductivity-type semiconductor layer 117 and the active layer 115 may be a single layer or may be a multilayer structure in which a plurality of layers having different compositions are layered. The capping layer 116 may include a nitride semiconductor satisfying InxAlyGa(1-x-y)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). An energy band gap of the capping layer 116 may be greater than an energy band gap of the active layer 115. A portion of the capping layer 116, a region adjacent to the second conductivity-type semiconductor layer 117, may include the second conductivity-type impurities (dopant) diffused from the second conductivity-type semiconductor layer 117.
The second conductivity-type semiconductor layer 117 may be a nitride semiconductor layer satisfying InxAlyGa1-x-yN (0≤x<1, 0≤y<1, 0≤x+y<1). The second conductivity-type semiconductor layer 117 may include p-type impurities (dopant). For example, the second conductivity-type semiconductor layer 117 may include p-type GaN. As an example, the second conductivity-type semiconductor layer 117 may be implemented as a single layer structure or may have a multilayer structure including layers having different compositions.
In an implementation, the first conductivity-type semiconductor layer 113 may be a nitride semiconductor layer satisfying p-type InxAlyGa1-x-yN (0≤x<1, 0≤y<1, 0≤x+y<1), and the second conductivity-type semiconductor layer 117 may be a nitride semiconductor layer satisfying n-type InxAlyGa1-x-yN (0≤x<1, 0≤y<1, 0≤x+y<1).
The active layer 115 may be formed on a portion of the first conductivity-type semiconductor layer 113, e.g., sidewalls of the active layer 115 may be coplanar with sidewalls of an upper surface of the first conductivity-type semiconductor layer 113, while a lower surface of the first conductivity-type semiconductor layer 113 may extend beyond the active layer 115 along a horizontal direction parallel to an upper surface of the substrate 101, e.g., a first direction (e.g., X direction) and a second direction (e.g., Y direction). The capping layer 116 may cover an overall upper surface of the active layer 115, and sidewalls of the capping layer 116 may be coplanar with sidewalls of the active layer 115.
The second conductivity-type semiconductor layer 117 may be formed on a portion of the capping layer 116. Sidewalls of the second conductivity-type semiconductor layer 117 may not be coplanar with sidewalls of the capping layer 116 and the active layer 115. In particular, sidewalls of the second conductivity-type semiconductor layer 117 may be spaced apart from sidewalls of the active layer 115 and sidewalls of the capping layer 116 along a horizontal direction parallel to the upper surface of the substrate 101, e.g., the first direction (e.g., X direction) and the second direction (e.g., Y direction). Widths of the second conductivity-type semiconductor layer 117 taken in the first direction (e.g., X direction) and the second direction (e.g., Y direction) may be smaller than widths of the capping layer 116 and widths of the active layer 115. For example, widths of a lower surface of the second conductivity-type semiconductor layer 117 taken in the first direction (e.g., X direction) and the second direction (e.g., Y direction) may be smaller than widths of an upper surface of the capping layer 116 and widths of an upper surface of the active layer 115. A surface area of the second conductivity-type semiconductor layer 117 may be smaller than a surface area of the capping layer 116 and an area of the active layer 115. For example, the surface area of a lower surface of the second conductivity-type semiconductor layer 117 may be smaller than the surface area of an upper surface of the capping layer 116 and the surface area of an upper surface of the active layer 115.
As described above, by distancing sidewalls of the second conductivity-type semiconductor layer 117 from sidewalls of the active layer 115, which may be a cause of non-luminous coupling, and by configuring an area of the second conductivity-type semiconductor layer 117 to be smaller than an area of the active layer 115, current density may increase and a light emitting efficiency may improve, even when the semiconductor light emitting device 10 operates at low voltage.
The first electrode 133 may be on, e.g., directly on, the first conductivity-type semiconductor layer 113. For example, the first electrode 133 may be spaced apart from the active layer 115 along a horizontal direction parallel to the upper surface of the substrate 101, e.g., the first direction (e.g., X direction). The second electrode 137 is on the second conductivity-type semiconductor layer 117. The first electrode 133 and the second electrode 137 may include materials, e.g., silver (Ag), aluminum (Al), nickel (Ni), chromium (Cr), palladium (Pd), copper (Cu), platinum (Pt), tin (Sn), tungsten (W), gold (Au), rhodium (Rh), iridium (Ir), ruthenium (Ru), magnesium (Mg), zinc (Zn), and the like, and may have a single layer structure or a structure including two or more layers.
To efficiently distribute current, a contact layer 135 may be between the second conductivity-type semiconductor layer 117 and the second electrode 137. The contact layer 135 may include a transparent conductive oxide. The transparent conductive oxide may be at least one of elements selected from among indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), In4Sn3O12, zinc magnesium oxide (Zn(1-x)MgxO, 0≤x≤1), and the like.
Referring to
Referring to
In example embodiments, when the capping layer 116 is not formed, the mask layer 120 may be formed on the active layer 115 including openings OP that expose the active layer 115.
Referring to
Referring to
Referring to
Referring to
Referring to
Referring to
Referring to
The semiconductor light emitting device 20 may include a mesa structure formed by etching a portion of the capping layer 216 and a portion of the active layer 215 to expose the first conductivity-type semiconductor layer 213. The second conductivity-type semiconductor layer 217 may be in a portion of the capping layer 216 of the mesa structure. A portion of the first conductivity-type semiconductor layer 213 may be exposed in a peripheral region of the mesa structure. In
The first conductivity-type semiconductor layer 213, the active layer 215, the capping layer 216, and the second conductivity-type semiconductor layer 217 each may be formed of a material the same as materials of the first conductivity-type semiconductor layer 113, the active layer 115, the capping layer 116, and the second conductivity-type semiconductor layer 117.
The active layer 215 may be on a portion of the first conductivity-type semiconductor layer 213.
The second conductivity-type semiconductor layer 217 may be on a portion of the capping layer 216. The capping layer 216 may cover an overall upper surface of the active layer 215, and sidewalls of the capping layer 216 may be coplanar with sidewalls of the active layer 215. Thus, the second conductivity-type semiconductor layer 217 may be on a portion of the active layer 215. Sidewalls of the second conductivity-type semiconductor layer 217 may be spaced apart from sidewalls of the active layer 215 and sidewalls of the capping layer 216. Widths of the second conductivity-type semiconductor layer 217 taken in a first direction (e.g., X direction) and a second direction (e.g., Y direction) may be smaller than widths of the capping layer 216 and widths of the active layer 215. For example, widths of a lower surface of the second conductivity-type semiconductor layer 217 taken in the first direction (e.g., X direction) and the second direction (e.g., Y direction) may be smaller than widths of an upper surface of the capping layer 216 and widths of an upper surface of the active layer 215. A surface area of the second conductivity-type semiconductor layer 217 may be smaller than a surface area of the capping layer 216 and an area of the active layer 215. For example, the surface area of a lower surface of the second conductivity-type semiconductor layer 217 may be smaller than the surface area of an upper surface of the capping layer 216 and the surface area of an upper surface of the active layer 215.
As described above, by distancing sidewalls of the second conductivity-type semiconductor layer 217 from sidewalls of the active layer 215, which may a cause of non-luminous coupling, and by configuring an area of the second conductivity-type semiconductor layer 217 to be smaller than an area of the active layer 215, current density may increase and a light emitting efficiency may improve even when the semiconductor light emitting device 20 operates at low voltage.
The first conductivity-type semiconductor layer 313, the active layer 315, the capping layer 316, and the second conductivity-type semiconductor layer 317 each may be formed of a material the same as materials of the first conductivity-type semiconductor layer 113, the active layer 115, the capping layer 116, and the second conductivity-type semiconductor layer 117 illustrated in
The active layer 315 may cover a portion of the first conductivity-type semiconductor layer 313.
The second conductivity-type semiconductor layer 317 may cover a portion of the capping layer 316. The capping layer 316 may cover an overall upper surface of the active layer 315, and sidewalls of the capping layer 316 may be coplanar with sidewalls of the active layer 315. Thus, the second conductivity-type semiconductor layer 317 may cover a portion of the active layer 315. Sidewalls of the second conductivity-type semiconductor layer 317 may be spaced apart from sidewalls of the active layer 315 and sidewalls of the capping layer 316. Widths of the second conductivity-type semiconductor layer 317 taken in a first direction (e.g., X direction) and a second direction (e.g., Y direction) may be smaller than widths of the capping layer 316 and widths of the active layer 315. An area of the second conductivity-type semiconductor layer 317 may be smaller than an area of the capping layer 316 and an area of the active layer 315.
As described above, by distancing sidewalls of the second conductivity-type semiconductor layer 317 from sidewalls of the active layer 315, which may a cause of non-luminous coupling, and by configuring an area of the second conductivity-type semiconductor layer 317 to be smaller than an area of the active layer 315, current density may increase and a light emitting efficiency may improve even when the semiconductor light emitting device 30 operates at low voltage.
The first electrode structure 337 may be connected to the first conductivity-type semiconductor layer 313 through the second conductivity-type semiconductor layer 317, the capping layer 316, and the active layer 315. The first electrode structure 337 may include a first contact electrode 331 in contact, e.g., direct contact, with the first conductivity-type semiconductor layer 313 and a first pad electrode 335 connected to the first contact electrode 331. A plurality of the first contact electrodes 331 may be disposed to reduce contact resistance with the first conductivity-type semiconductor layer 313 and to distribute current of the semiconductor light emitting device 30. The number of the first contact electrodes 331 may not be limited to the example illustrated in
The first contact electrode 331 may include a material forming an ohmic contact with the first conductivity-type semiconductor layer 313. The first contact electrode 331 may include materials, e.g., Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and the like, and may have a single layer structure or a structure having two or more layers. For example, the first contact electrode 331 may include Cr/Au or Cr/Au/Pt. The second contact electrode 333 may include a material forming an ohmic contact with the second conductivity-type semiconductor layer 317. For example, the second contact electrode 333 may include Ag or Ag/Ni. The first and second pad electrodes 335 and 336 may include materials, e.g., Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and the like, and may have a single layer structure or a structure having two or more layers.
The first electrode structure 337 and the second electrode structure 338 may be electrically isolated from each other by a passivation layer 306. The passivation layer 306 may include a first insulating layer 306a and a second insulating layer 306b, and the first and second insulating layers 306a and 306b may be formed of SiO2, SiN, or SiON.
A serrated structure P1 may be formed on a surface of the first conductivity-type semiconductor layer 313, e.g., surface opposite the active layer 315. The serrated structure P1 may have a hemispherical shape, a conical shape, a polypyramidal shape, and the like.
Referring to
Referring to
Referring to
Along with the formation of the mesa structure, holes H penetrating through the capping layer 316, the active layer 315, and the first conductivity-type semiconductor layer 313 may be formed, and the first conductivity-type semiconductor layer 313 may be partially exposed through the holes H. The holes H may be a structure for forming an electrode connected to the first conductivity-type semiconductor layer 313. A portion of the first conductivity-type semiconductor layer 313 exposed through the holes H may be provided as a region in which the first contact electrodes 331 are disposed.
Referring to
A first insulating layer 306a covering a light emitting structure LS and a substrate 301 may be formed. A portion of the first insulating layer 306a may be removed, and a first contact electrode 331 and a second contact electrode 333 may be disposed. The first contact electrode 331 and the second contact electrode 333 may be electrically isolated from each other by the first insulating layer 306a.
The first insulating layer 306a may include an insulating material, e.g., SiO2, SiOxNy, SixNy, and the like. The first contact electrode 331 may include a material forming an ohmic contact with the first conductivity-type semiconductor layer 313. An example embodiment of the first contact electrode 331 is not limited thereto. The first contact electrode 331 may include a material, e.g., Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and the like, and may have a single layer structure or a structure having two or more layers. For example, the first contact electrode 331 may include Cr/Au or Cr/Au/Pt. A barrier layer may further be disposed on the first contact electrode 331. The barrier layer may be formed of at least one of elements selected from Ni, Al, Cu, Cr, Ti, combinations thereof, and the like. The second contact electrode 333 may include a material forming an ohmic contact with the second conductivity-type semiconductor layer 317. For example, the second contact electrode 333 may include Ag or Ag/Ni. A barrier layer may further be disposed on the second contact electrode 333. The barrier may be formed of at least one of elements selected from a group consisting of Ni, Al, Cu, Cr, Ti, and combinations thereof.
Referring to
The second insulating layer 306b may be provided as a passivation layer 306 along with the first insulating layer 306a. An example embodiment of the second insulating layer 306b may not be limited thereto, and the second insulating layer 306b may be formed of a material similar to or the same as a material of the first insulating layer 306a.
Referring to
Referring to
The first pad electrode 335 may be connected to a first contact electrode 331 through the first openings OP1, and the second pad electrode 336 may be connected to a second contact electrode 333 through the second opening OP2. The first pad electrode 335 and the second pad electrode 336 may be spaced apart from each other with a certain gap in a horizontal direction in parallel to an upper surface of the substrate 301.
The first and second pad electrodes 335 and 336 may include a material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and the like, and may have a single layer structure or a multilayer structure.
Referring to
A process of temporality attaching a support substrate 340 to first and second pad electrodes 335 and 336 may be performed. When the support substrate 340 is attached, an adhesive material such as infrared thermosetting material may be used. The substrate 301 may be removed through a process such as a laser lift-off process. The process is not limited to the above-described example, and the substrate 301 may also be removed through a different mechanical or chemical process.
A serrated structure P1 may be formed on a surface of the first conductivity-type semiconductor layer 313. The serrated structure P1 may reduce total reflection on a surface of the first conductivity-type semiconductor layer 313 and may thus improve light extraction efficiency. The serrated structure P1 may be formed through a dry texturing process or a wet texturing process.
Referring back to
According to the aforementioned example embodiments, the semiconductor light emitting device may operate with low current and may have improved light emitting efficiency.
Also, according to the aforementioned example embodiments, by using the method of manufacturing the semiconductor light emitting device described above, a semiconductor light emitting device which may operate in low current and may have improved light emitting efficiency may be provided.
Example embodiments have been disclosed herein, and although specific terms are employed, they are used and are to be interpreted in a generic and descriptive sense only and not for purpose of limitation. In some instances, as would be apparent to one of ordinary skill in the art as of the filing of the present application, features, characteristics, and/or elements described in connection with a particular embodiment may be used singly or in combination with features, characteristics, and/or elements described in connection with other embodiments unless otherwise specifically indicated. Accordingly, it will be understood by those of skill in the art that various changes in form and details may be made without departing from the spirit and scope of the present invention as set forth in the following claims.
Kim, Yong Il, Lee, Dong Gun, Tak, Young Jo, Kim, Joo Sung, Seo, Jong Uk
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