Provided is a current control circuit. A current control circuit may include a clock sensing unit configured to generate a control signal according to one or more frequencies based on a plurality of clock signals, and a current scaling unit configured to scale a bias current according to the control signal. The current control circuit according to example embodiments may dynamically control a bias current according to one or more frequencies based on a plurality of clock signals so that power consumption of an analog-to-digital converter (adc) and the semiconductor device including the adc, which require various operating frequencies, may be improved.
|
1. A current control circuit, comprising:
a clock sensing unit configured to generate a control signal according to one or more frequencies based on a plurality of clock signals; and
a current scaling unit configured to scale a bias current and output the scaled current in response to a current ratio determined according to the control signal.
15. A method of controlling a bias current of an analog-to-digital converter (adc) according to a frequency of a sampling clock signal in the adc, the method comprising:
generating a control signal that corresponds to the frequency of the sampling clock signal;
scaling the bias current according to a predetermined current ratio; and
outputting the scaled current as an operating current of the adc, in response to the control signal.
16. A current control circuit, comprising:
a current scaling unit configured to scale a bias current according to a current ratio and to output the scaled current as an operating current, in response to a control signal corresponding to one or more frequencies based on a plurality of clock signals, with the control signal including a plurality of bits, and each of the bits corresponding to a state of one of a plurality of control transistors of the current scaling unit.
2. The current control circuit of
a variable resistor configured to vary a resistor value corresponding to the one or more frequencies based on a plurality of clock signals,
a fixed resistor having a first end connected to an end of the variable resistor and a second end connected to a power voltage source, and
a control signal generator configured to generate the control signal that corresponds to an index voltage obtained by dividing the power voltage according to a resistor ratio of the variable resistor to the fixed resistor.
3. The current control circuit of
4. The current control circuit of
6. The current control circuit of
7. The current control circuit of
8. The current control circuit of
a first transistor having a first end connected to a power voltage source and a second end connected to the bias current,
at least one control transistor having a gate connected to the control signal,
at least one scale transistor having a first end connected to a corresponding end of the control transistor and a second end connected to the power voltage source, and
a second transistor having an end connected to the power voltage source in parallel with the first transistor and the scale transistors and outputting the operating current.
10. The current control circuit of
11. The current control circuit of
12. The current control circuit of
13. The current control circuit of
17. The current control circuit of
18. The current control circuit of
a first transistor having a first end connected to a power voltage source and a second end connected to the bias current,
a plurality of scale transistors having a first end connected to a corresponding end of one of the plurality of control transistors and a second end connected to the power voltage source, and
a second transistor having an end connected to the power voltage source in parallel with the first transistor and the scale transistors and outputting the operating current.
19. The current control circuit of
20. The current control circuit of
|
This application claims the benefit of Korean Patent Application No. 10-2008-0033875, filed on Apr. 11, 2008, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
1. Field
Example embodiments relate to a semiconductor device, for example, to a current control circuit and a method of controlling current in an analog-to-digital converter (ADC).
2. Description of the Related Art
Conventionally, analog-to-digital converters (ADCs) are used in system-on-chip (SOC) applications in various ways. Here, desired performances and sampling speed vary in each application. Accordingly, desired performances vary in ADCs when used and an operating frequency (frequency of a sampling clock signal) also varies in ADCs.
However, a bias current of ADCs according to the conventional art is regularly generated, regardless of the frequency of a sampling clock signal. As such, when ADCs use a bias current generated at a constant rate, regardless of the frequency of a sampling clock signal, power may be unnecessarily consumed.
For example, in an ADC designed to use a bias current of 100 mA that corresponds to a sampling clock signal of 80 MHz, even when a sampling clock signal that has a lower frequency than 80 MHz is input, a fixed bias current of 100 mA is used so that power may be wasted.
For example, since power consumed in an ADC is high, unnecessary power consumption as described above may affect semiconductor devices or systems.
Example embodiments provide a current control circuit for preventing unnecessary power consumption in an analog-to-digital converter (ADC).
Example embodiments may provide a current control circuit including a clock sensing unit configured to generate a control signal according to one or more frequencies based on a plurality of clock signals, and a current scaling unit configured to scale a bias current according to the control signal.
According to example embodiments, the clock sensing unit may include a variable resistor configured to vary a resistor value corresponding to the one or more frequencies based on a plurality of clock signals, a fixed resistor having a first end connected to an end of the variable resistor and a second end connected to a power voltage source, and a control signal generator configured to generate the control signal that corresponds to an index voltage obtained by dividing the power voltage according to a resistor ratio of the variable resistor to the fixed resistor.
The variable resistor may be implemented with a switched capacitor.
According to example embodiments, a filter may be configured to filter the index voltage. Additionally, the filter may be a low-pass filter.
The control signal generator may be an auxiliary analog-to-digital converter (ADC) configured to receive the index voltage and output the control signal as an n-bit digital code, where n is a natural number, the control signal being one of a plurality of thermometer digital codes.
The plurality of clock signals may be applied to the clock sensing unit from a clock source circuit located outside an analog-to-digital converter (ADC), where the current control circuit is located inside the ADC.
The current scaling unit may output the scaled current in response to a current ratio determined according to the control signal.
According to example embodiments, the current scaling unit may include a first transistor having a first end connected to a power voltage source and a second end connected to the bias current, at least one control transistor having a gate connected to the control signal, at least one scale transistor having a first end connected to a corresponding end of the control transistor and a second end connected to the power voltage source, and a second transistor having an end connected to the power voltage source in parallel with the first transistor and the scale transistors and outputting the operating current.
The operating current may be output to an amplifier.
The current ratio may correspond to a number of the at least one scale transistors that are connected to the at least one control transistors that are turned on in response to the control signal.
The control signal may be an n-bit digital code, where n is a natural number, and a number of the control transistors corresponds to a number of bits of the control signal.
The control transistors may be turned on according to bit values of the control signal.
The bias current may be supplied to the current scaling unit by a bias current generator
An analog-to-digital converter (ADC) may include the current control circuit.
According to an example embodiment, a current control circuit may include a current scaling unit configured to scale a bias current according to a current ratio and to output the scaled current as an operating current, in response to a control signal corresponding to one or more frequencies based on a plurality of clock signals, with the control signal including a plurality of bits, and each of the bits corresponding to a state of one of a plurality of control transistors of the current scaling unit.
Example embodiments may provide a current control circuit including a current scaling unit configured to scale a bias current according to a current ratio and to output the scaled current as an operating current of an analog-to-digital converter (ADC), in response to a control signal corresponding to a frequency of a clock signal, with the control signal including a plurality of bits, and each of the bits corresponding to a state of a separate transistor of the current scaling unit.
Each of the bits of the control signal may connect to a separate gate of one of the plurality of control transistors.
The above and other features and advantages will become more apparent by describing in detail of example embodiments with reference to the attached drawings in which:
Hereinafter, example embodiments will be described more fully with reference to the accompanying drawings, in which example embodiments are shown.
Specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments. Example embodiments may, however, may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
Accordingly, while example embodiments are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intent to limit example embodiments to the particular forms disclosed, but on the contrary, example embodiments are to cover all modifications, equivalents, and alternatives falling within the scope of example embodiments. Like numbers refer to like elements throughout the description of the figures.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between”, “adjacent” versus “directly adjacent”, etc.).
Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper,” and the like may be used herein for ease of description to describe the relationship of one component and/or feature to another component and/or feature, or other component(s) and/or feature(s), as illustrated in the drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The figures are intended to depict example embodiments and should not be interpreted to limit the intended scope of the claims. The accompanying figures are not to be considered as drawn to scale unless explicitly noted.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises”, “comprising,”, “includes” and/or “including”, when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. In this specification, the term “and/or” picks out each individual item as well as all combinations of them.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which example embodiments belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
It should also be noted that in some alternative implementations, the functions/acts noted may occur out of the order noted in the FIGS. For example, two FIGS. shown in succession may in fact be executed substantially concurrently or may sometimes be executed in the reverse order, depending upon the functionality/acts involved.
Now, in order to more specifically describe example embodiments, example embodiments will be described in detail with reference to the attached drawings. However, example embodiments are not limited to the embodiments described herein, but may be embodied in various forms. In the figures, if a layer is formed on another layer or a substrate, it means that the layer is directly formed on another layer or a substrate, or that a third layer is interposed there between.
Referring to
The current control circuit 140 scales a bias current, Ibias, generated in the bias current generator 160, by a current ratio and generates the scaled current as operating current, Iope, of the ADC, which is then used in the amplifier 120. The current ratio, for example, may be determined empirically or according to desired parameters. Here, the current control circuit 140, according to an example embodiment, may generate and vary the intensity of the operating current, Iope, according to the frequencies of sampling clock signals Q1 and Q2 so that current consumption (power consumption) may be improved for the frequencies of sampling clock signals Q1 and Q2.
For example, the current control circuit 140 included in the ADC 100 of the current embodiment includes a clock sensing unit 142 and a current scaling unit 144. The clock sensing unit 142 generates a control signal XCON, which corresponds to the frequencies of the sampling clock signals Q1 and Q2. In response to the control signal XCON, the current scaling unit 144 scales the bias current, Ibias, by a current ratio and generates the scaled current as the operating current, Iope, of the ADC 100. As mentioned above, the operating current, Iope, may be used in the amplifier 120 of the ADC 100.
Hereinafter, the current control circuit 140 included in the ADC 100 will be described in more detail.
Referring to
The variable resistor SC may be varied to a resistor value that corresponds to the frequencies of the sampling clock signals Q1 and Q2. Here, the variable resistor SC may be implemented with a switched capacitor SC illustrated in
The switched capacitor SC of
Referring back to
It may be assumed that the voltage obtained by dividing the power voltage VDD according to a resistor ratio of the variable resistor SC to the fixed resistor FR denotes an index voltage. The clock sensing unit 142, according to example embodiments, may further include a filter for filtering the index voltage, in order to reduce or minimize the index voltage from being changed by affects from the sampling clock signals Q1 and Q2. Here, the filter may be a low-pass filter LF.
The control signal generator GXCON generates the control signal XCON that corresponds to the value of the index voltage. The control signal XCON may be an n-bit digital code (where n is a natural number). The control signal generator GXCON may be realized by an auxiliary ADC. For example, when the n-bit auxiliary ADC is used, the control signal XCON may be output as one digital code from among 2n-1 thermometer digital codes.
The control signal generator XCON generated as above is transmitted to the current scaling unit 144.
Referring to
One end of the first transistor MP1 is connected to the power voltage source VDD and the bias current Ibias is applied to the other end of the first transistor MP1. As described above, the bias current Ibias may be applied by the bias current generator 160 located outside the current control circuit 140.
The control signal XCON is applied to each of the control transistors MP5 to MP7. When the control signal XCON is an n-bit digital code, as mentioned above, the number of control transistors MP5 to MP7 included may correspond to n of the control signal XCON.
Here, each of the control transistors MP5 to MP7 may be turned on according to bit values of the control signal XCON. For example, when the control signal XCON is “110,” the first control transistor MP5 and the second transistor MP6 may be turned off and the third control transistor MP7 may be turned on.
One end of each of the scale transistors MP2 to MP4 is respectively connected to one end of each of the corresponding control transistors MP5 to MP7, and the other end of each of the scale transistors MP2 to MP4 are connected to the power voltage source VDD. For example, as illustrated in
Thus, activation of the scale transistors MP2 to MP4 may vary according to on and off states of the connected control transistors MP5 to MP7. For example, when the control signal XCON is “110,” only the third scale transistor MP4 is activated and thus a current may be generated.
One end of the second transistor MP0 is connected to the power voltage source VDD and the second transistor MP0 is connected in parallel with the first transistor MP1 and the scale transistors MP2 to MP4, thereby outputting the operating current, Iope. A gate of the second transistor MP0 is connected to the node including the bias current Ibias. In addition, the other end of the second transistor MP0 connects to a ground voltage GND through a ground transistor. A gate of the ground transistor is connected to the other end of the second transistor MP0. As mentioned above, the operating current, Iope, is generated by a current ratio with respect to the bias current, Ibias.
Here, the current ratio corresponds to the number of the scale transistors activated in response to the control signal XCON.
For example, it may be assumed that the scale transistors MP2 to MP4, the first transistor MP1, and the second transistor MP0 have the same capacitance as each other. Here, when the bias current Ibias is 100 mA and the control signal XCON is “110,” the third scale transistor MP4 may be activated, so that the current ratio of the bias current Ibias to the current ratio Iope may be 2:1. Therefore, the current ratio, Iope, may be generated at 50 mA.
However, in order to regulate the current ratio with a decimal ratio (for example, 1.5:1), instead of a fixed number ratio, the capacity of the scale transistors MP2 to MP4 may be different from that of the first transistor MP1 and the second transistor MP0. Moreover, according to a current ratio to be determined, the capacity of each of the scale transistors may be determined differently.
Referring to
In the conventional ADC, the same operating current (a=b=c=d) is generated, regardless of the frequency of the sampling clock signal.
However, in the ADC including the current control circuit according to an example embodiment, the operating current having different values in terms of each sampling clock signal is generated. For example, in the ADC according to an example embodiment, the operating current d is generated at the highest sampling frequency of 80 MHz and the operating current d is generated at the lowest sampling frequency of 20 MHz so that the operating current is generated in proportion to the frequency of a sampling clock signal.
Referring to
Referring to
As described above, the current control circuit and the method of controlling current in the ADC, according to an example embodiment, may dynamically control a bias current according to the frequencies of sampling clock signals so that power consumption of the ADC and the semiconductor device including the ADC, which use various operating frequencies, may be improved.
Moreover, the current control circuit and the method of controlling current in the ADC according to an example embodiment may be provided to various products having different operating frequencies with one ADC that is in an IP form so that time and cost used to produce an IP may be saved.
While example embodiments have been particularly shown and described, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of example embodiments as defined by the following claims.
Kim, Sang-Kyu, Chung, Dae-young
Patent | Priority | Assignee | Title |
10014387, | Jun 27 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure with multiple transistors having various threshold voltages |
10074568, | Sep 30 2009 | MIE FUJITSU SEMICONDUCTOR LIMITED | Electronic devices and systems, and methods for making and using same |
10217668, | Sep 30 2009 | MIE FUJITSU SEMICONDUCTOR LIMITED | Electronic devices and systems, and methods for making and using the same |
10217838, | Jun 27 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure with multiple transistors having various threshold voltages |
10224244, | Sep 30 2009 | MIE FUJITSU SEMICONDUCTOR LIMITED | Electronic devices and systems, and methods for making and using the same |
10250257, | Feb 18 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Digital circuits having improved transistors, and methods therefor |
10290246, | Apr 27 2016 | Samsung Display Co., Ltd. | Display apparatus and driving method thereof |
10325986, | Sep 30 2009 | MIE FUJITSU SEMICONDUCTOR LIMITED | Advanced transistors with punch through suppression |
11062950, | Sep 30 2009 | UNITED SEMICONDUCTOR JAPAN CO , LTD | Electronic devices and systems, and methods for making and using the same |
11887895, | Sep 30 2009 | United Semiconductor Japan Co., Ltd. | Electronic devices and systems, and methods for making and using the same |
7999714, | Aug 17 2009 | Atmel Corporation | Controlling bias current for an analog to digital converter |
8400219, | Mar 24 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Analog circuits having improved transistors, and methods therefor |
8404551, | Dec 03 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Source/drain extension control for advanced transistors |
8421162, | Sep 30 2009 | MIE FUJITSU SEMICONDUCTOR LIMITED | Advanced transistors with punch through suppression |
8461875, | Feb 18 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Digital circuits having improved transistors, and methods therefor |
8525271, | Mar 03 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure with improved channel stack and method for fabrication thereof |
8530286, | Apr 12 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Low power semiconductor transistor structure and method of fabrication thereof |
8563384, | Dec 03 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Source/drain extension control for advanced transistors |
8569128, | Jun 21 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure and method of fabrication thereof with mixed metal types |
8569156, | May 16 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Reducing or eliminating pre-amorphization in transistor manufacture |
8599623, | Dec 23 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Circuits and methods for measuring circuit elements in an integrated circuit device |
8614128, | Aug 23 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | CMOS structures and processes based on selective thinning |
8629016, | Jul 26 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer |
8637955, | Aug 31 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure with reduced junction leakage and method of fabrication thereof |
8645878, | Aug 23 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Porting a circuit design from a first semiconductor process to a second semiconductor process |
8653604, | Jul 26 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer |
8686511, | Dec 03 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Source/drain extension control for advanced transistors |
8713511, | Sep 16 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Tools and methods for yield-aware semiconductor manufacturing process target generation |
8735987, | Jun 06 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | CMOS gate stack structures and processes |
8748270, | Mar 30 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Process for manufacturing an improved analog transistor |
8748986, | Aug 05 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Electronic device with controlled threshold voltage |
8759872, | Jun 22 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Transistor with threshold voltage set notch and method of fabrication thereof |
8796048, | May 11 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Monitoring and measurement of thin film layers |
8806395, | Aug 23 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Porting a circuit design from a first semiconductor process to a second semiconductor process |
8811068, | May 13 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Integrated circuit devices and methods |
8816754, | Nov 02 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Body bias circuits and methods |
8819603, | Dec 15 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Memory circuits and methods of making and designing the same |
8847684, | Mar 24 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Analog circuits having improved transistors, and methods therefor |
8863064, | Mar 23 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | SRAM cell layout structure and devices therefrom |
8877619, | Jan 23 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom |
8883600, | Dec 22 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Transistor having reduced junction leakage and methods of forming thereof |
8895327, | Dec 09 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Tipless transistors, short-tip transistors, and methods and circuits therefor |
8916937, | Jul 26 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer |
8937005, | May 16 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Reducing or eliminating pre-amorphization in transistor manufacture |
8963249, | Aug 05 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Electronic device with controlled threshold voltage |
8970289, | Jan 23 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Circuits and devices for generating bi-directional body bias voltages, and methods therefor |
8995204, | Jun 23 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Circuit devices and methods having adjustable transistor body bias |
8999861, | May 11 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure with substitutional boron and method for fabrication thereof |
9006843, | Dec 03 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Source/drain extension control for advanced transistors |
9041126, | Sep 21 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Deeply depleted MOS transistors having a screening layer and methods thereof |
9054219, | Aug 05 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor devices having fin structures and fabrication methods thereof |
9070477, | Dec 12 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Bit interleaved low voltage static random access memory (SRAM) and related methods |
9093469, | Mar 30 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Analog transistor |
9093550, | Jan 31 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same |
9093997, | Nov 15 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Slew based process and bias monitors and related methods |
9105711, | Aug 31 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure with reduced junction leakage and method of fabrication thereof |
9111785, | Mar 03 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure with improved channel stack and method for fabrication thereof |
9112057, | Sep 18 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor devices with dopant migration suppression and method of fabrication thereof |
9112484, | Dec 20 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Integrated circuit process and bias monitors and related methods |
9117746, | Aug 23 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Porting a circuit design from a first semiconductor process to a second semiconductor process |
9154123, | Nov 02 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Body bias circuits and methods |
9184750, | Feb 18 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Digital circuits having improved transistors, and methods therefor |
9196727, | Dec 22 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | High uniformity screen and epitaxial layers for CMOS devices |
9224733, | Jun 21 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure and method of fabrication thereof with mixed metal types |
9231541, | Mar 24 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Analog circuits having improved transistors, and methods therefor |
9236466, | Oct 07 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Analog circuits having improved insulated gate transistors, and methods therefor |
9263523, | Sep 30 2009 | MIE FUJITSU SEMICONDUCTOR LIMITED | Advanced transistors with punch through suppression |
9268885, | Feb 28 2013 | MIE FUJITSU SEMICONDUCTOR LIMITED | Integrated circuit device methods and models with predicted device metric variations |
9276561, | Dec 20 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Integrated circuit process and bias monitors and related methods |
9281248, | Jun 06 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | CMOS gate stack structures and processes |
9297850, | Dec 23 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Circuits and methods for measuring circuit elements in an integrated circuit device |
9299698, | Jun 27 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure with multiple transistors having various threshold voltages |
9299801, | Mar 14 2013 | MIE FUJITSU SEMICONDUCTOR LIMITED | Method for fabricating a transistor device with a tuned dopant profile |
9319013, | Aug 19 2014 | MIE FUJITSU SEMICONDUCTOR LIMITED | Operational amplifier input offset correction with transistor threshold voltage adjustment |
9319034, | Nov 15 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Slew based process and bias monitors and related methods |
9362291, | May 13 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Integrated circuit devices and methods |
9368624, | Dec 22 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Method for fabricating a transistor with reduced junction leakage current |
9385047, | Jan 31 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same |
9391076, | Aug 23 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | CMOS structures and processes based on selective thinning |
9406567, | Feb 28 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Method for fabricating multiple transistor devices on a substrate with varying threshold voltages |
9418987, | Jun 22 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Transistor with threshold voltage set notch and method of fabrication thereof |
9424385, | Mar 23 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | SRAM cell layout structure and devices therefrom |
9431068, | Oct 31 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Dynamic random access memory (DRAM) with low variation transistor peripheral circuits |
9478571, | May 24 2013 | MIE FUJITSU SEMICONDUCTOR LIMITED | Buried channel deeply depleted channel transistor |
9496261, | Apr 12 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Low power semiconductor transistor structure and method of fabrication thereof |
9508800, | Sep 30 2009 | MIE FUJITSU SEMICONDUCTOR LIMITED | Advanced transistors with punch through suppression |
9514940, | May 16 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Reducing or eliminating pre-amorphization in transistor manufacture |
9577041, | Mar 14 2013 | MIE FUJITSU SEMICONDUCTOR LIMITED | Method for fabricating a transistor device with a tuned dopant profile |
9680470, | Feb 18 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Digital circuits having improved transistors, and methods therefor |
9710006, | Jul 25 2014 | MIE FUJITSU SEMICONDUCTOR LIMITED | Power up body bias circuits and methods |
9741428, | May 13 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Integrated circuit devices and methods |
9786703, | May 24 2013 | MIE FUJITSU SEMICONDUCTOR LIMITED | Buried channel deeply depleted channel transistor |
9793172, | May 16 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Reducing or eliminating pre-amorphization in transistor manufacture |
9812550, | Jun 27 2012 | MIE FUJITSU SEMICONDUCTOR LIMITED | Semiconductor structure with multiple transistors having various threshold voltages |
9838012, | Feb 18 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Digital circuits having improved transistors, and methods therefor |
9865596, | Apr 12 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Low power semiconductor transistor structure and method of fabrication thereof |
9893148, | Mar 14 2013 | MIE FUJITSU SEMICONDUCTOR LIMITED | Method for fabricating a transistor device with a tuned dopant profile |
9922977, | Jun 22 2010 | MIE FUJITSU SEMICONDUCTOR LIMITED | Transistor with threshold voltage set notch and method of fabrication thereof |
9966130, | May 13 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Integrated circuit devices and methods |
9985631, | Feb 18 2011 | MIE FUJITSU SEMICONDUCTOR LIMITED | Digital circuits having improved transistors, and methods therefor |
9991300, | May 24 2013 | MIE FUJITSU SEMICONDUCTOR LIMITED | Buried channel deeply depleted channel transistor |
Patent | Priority | Assignee | Title |
6134430, | Dec 09 1997 | Qualcomm Incorporated | Programmable dynamic range receiver with adjustable dynamic range analog to digital converter |
6686860, | Dec 12 2000 | Massachusetts Institute of Technology | Reconfigurable analog-to-digital converter |
6864817, | Dec 30 2003 | SHENZHEN XINGUODU TECHNOLOGY CO , LTD | Signaling dependent adaptive analog-to-digital converter (ADC) system and method of using same |
7190299, | Nov 28 2002 | DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT | Current control method and application thereof |
20060197558, |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Mar 17 2009 | KIM, SANG-KYU | SAMSUNG ELECTRONICS CO , LTD | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 022490 | /0218 | |
Mar 17 2009 | CHUNG, DAE-YOUNG | SAMSUNG ELECTRONICS CO , LTD | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 022490 | /0218 | |
Mar 24 2009 | Samsung Electronic Co., Ltd. | (assignment on the face of the patent) | / |
Date | Maintenance Fee Events |
Mar 26 2014 | M1551: Payment of Maintenance Fee, 4th Year, Large Entity. |
Mar 22 2018 | M1552: Payment of Maintenance Fee, 8th Year, Large Entity. |
Mar 23 2022 | M1553: Payment of Maintenance Fee, 12th Year, Large Entity. |
Date | Maintenance Schedule |
Oct 05 2013 | 4 years fee payment window open |
Apr 05 2014 | 6 months grace period start (w surcharge) |
Oct 05 2014 | patent expiry (for year 4) |
Oct 05 2016 | 2 years to revive unintentionally abandoned end. (for year 4) |
Oct 05 2017 | 8 years fee payment window open |
Apr 05 2018 | 6 months grace period start (w surcharge) |
Oct 05 2018 | patent expiry (for year 8) |
Oct 05 2020 | 2 years to revive unintentionally abandoned end. (for year 8) |
Oct 05 2021 | 12 years fee payment window open |
Apr 05 2022 | 6 months grace period start (w surcharge) |
Oct 05 2022 | patent expiry (for year 12) |
Oct 05 2024 | 2 years to revive unintentionally abandoned end. (for year 12) |