A sense amplifier circuit senses and amplifies a signal read from memory cells arranged at intersections of word-lines and bit-lines. A write circuit reads first data held in a first memory cell of the memory cells, and writes second data corresponding to the first data in a second memory cell different from the first memory cell. A data latch circuit holds data read from the first memory cell. A logic operation circuit performs a logic operation using data read from the second memory cell and data held in the data latch circuit as input values and outputs third data as an operation value. A write-back circuit writes the third data back to the first memory cell.
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1. A semiconductor memory device configured to selectively adopt a twin-cell configuration and a single-cell configuration, comprising:
a memory cell array comprising a plurality of memory cells arranged at intersections of word-lines and bit-lines;
a sense amplifier circuit configured to sense and amplify a signal read from the memory cells;
a write circuit configured to write, according to first data held in a first memory cell of the memory cells, second data corresponding to the first data to a second memory cell different from the first memory cell as second data corresponding to the first data, when the twin-cell configuration is selected, the second memory cell being connected to a sense amplifier circuit different from that connected to the first memory cell;
a data latch circuit configured to hold data read from the first memory cell;
a logic operation circuit configured to perform a logic operation using data read from the second memory cell and data held in the data latch circuit as input values, and output third data as an operation value; and
a write-back circuit configured to write the third data back to the first memory cell.
13. A semiconductor memory device comprising:
a memory cell array comprising a plurality of memory cells arranged at intersections of word-lines and bit-lines, each memory cell storing data by holding a charge in a capacitor;
a sense amplifier circuit configured to sense and amplify a signal read from the memory cell;
a read amplifier configured to further amplify an amplification signal from the sense amplifier circuit, and outputting read data;
a write circuit configured to write, in a normal operation, write data to the memory cell, the write data being to be written to the memory cell, and write, in a twin-cell configuration in which two memory cells hold the same data, a first data read from a first memory cell of the memory cells to a second memory cell different from the first memory cell as a second data corresponding to the first data, the second memory cell being connected to a sense amplifier circuit different from that connected to the first memory cell; and
a logic operation circuit configured to perform a logic operation using data read from the second memory cell and data read from the first memory cell as input values, and output third data as an operation value;
the write circuit writing the third data back to the first memory cell.
2. The semiconductor memory device according to
the data latch circuit is a write data-latch circuit temporarily holding write data when writing data to the memory cell.
3. The semiconductor memory device according to
the logic operation circuit is adapted to perform different logic operations between when a memory cell in the memory cell array that is to be subjected to scrambled writing is read and when a memory cell not to be subjected to scrambled writing is read.
4. The semiconductor memory device according to
a pair of adjacent bit-lines form a complementary bit-line pair, and each complementary bit-line pair has one sense amplifier circuit connected thereto.
5. The semiconductor memory device according to
the write circuit is adapted to transfer a voltage of the first bit-line connected to the first memory cell to the second bit-line connected to the second memory cell.
6. The semiconductor memory device according to
7. The semiconductor memory device according to
the logic operation circuit comprising:
a first operation circuit configured to perform a first logic operation using data read from the second memory cell and data held in the data latch circuits input values, and outputting fourth data;
a second operation circuit configured to perform a second logic operation using data read from the second memory cell and data held in the data latch circuit as input values, and outputting fifth data; and
a multiplexer configured to output the fourth data as the third data when a memory cell in the memory cell array that is to be subjected to scrambled writing is read, and output the fifth data as the third data when a memory cell not to be subjected to scrambled writing is read.
8. The semiconductor memory device according to
9. The semiconductor memory device according to
10. The semiconductor memory device according to
the logic operation circuit is adapted to perform different logic operations between when a memory cell in the memory cell array that is to be subjected to scrambled writing is read and when a memory cell not to be subjected to scrambled writing is read.
11. The semiconductor memory device according to
12. The semiconductor memory device according to
a pair of adjacent bit-lines form a complementary bit-line pair, and each complementary bit-line pair has one sense amplifier circuit connected thereto.
14. The semiconductor memory device according to
the logic operation circuit is adapted to perform different logic operations between when a memory cell in the memory cell array that is to be subjected to scrambled writing is read and when a memory cell not to be subjected to scrambled writing is read.
15. The semiconductor memory device according to
a pair of adjacent bit-lines form a complementary bit-line pair, and each complementary bit-line pair has one sense amplifier circuit connected thereto.
16. The semiconductor memory device according to
the complementary bit-line pair has a twisted bit-line structure in which the bit-line pair intersects with each other in predetermined regions.
17. The semiconductor memory device according to
the logic operation circuit comprises:
a first operation circuit configured to perform a first logic operation using data read from the second memory cell and data held in the data latch circuit as input values, and output fourth data;
a second operation circuit configured to perform a second logic operation using data read from the second memory cell and data held in the data latch circuit as input values, and output fifth data;
a multiplexer configured to output the fourth data as the third data when a memory cell in the memory cell array that is to be subjected to scrambled writing is read, and output the fifth data as the third data when a memory cell not to be subjected to scrambled writing is read.
18. The semiconductor memory device according to
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This application is based on and claims the benefit of priority from prior Japanese Patent Application No. 2009-183796, filed on Aug. 6, 2009, the entire contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to semiconductor memory devices, and more particularly, to volatile semiconductor memory devices that need refresh operations.
2. Description of the Related Art
Recent prevalence of handheld devices has increased the importance of low power consumption embedded DRAMs. A variety of embedded DRAMs have been developed as means to reduce the power consumption. For example, a twin-cell DRAM has two memory cells connected to the same word-line, and the memory cells store complementary data or the like, thereby improving the retention time and thus reducing the power consumption. Additionally, JPH 9-17178 proposes a twin-cell DRAM in which two memory cells hold the same data and operate the logical OR thereof or the like, thereby improving the retention time and thus reducing the power consumption.
The twin-cell DRAM has a problem, however, that switching between the single-cell configuration and the twin-cell configuration needs data compression and decompression, thus increasing the switching time and the operation time as well as requiring a dedicated circuit for the data compression and decompression, which increases the circuit area.
A semiconductor memory device according to an aspect of the present invention includes: a memory cell array comprising a plurality of memory cells arranged at intersections of word-lines and bit-lines; a sense amplifier circuit configured to sense and amplify a signal read from the memory cells; a write circuit configured to write, according to first data held in a first memory cell of the memory cells, second data corresponding to the first data in a second memory cell different from the first memory cell as second data corresponding to the first data; a data latch circuit configured to hold data read from the first memory cell; a logic operation circuit configured to perform a logic operation using data read from the second memory cell and data held in the data latch circuit as input values, and output third data as an operation value; and a write-back circuit configured to write the third data back to the first memory cell.
With reference to the accompanying drawings, preferred embodiments of the present invention will be described in more detail.
First, with reference to
The memory cell array 11 includes memory cells MC in a matrix at intersections of word-lines WL and bit-lines BL. By way of example, the memory cell MC includes one cell-capacitor CC and one cell-transistor CT that are connected in series. The memory cell MC stores data using a charge (not shown) held in the cell capacitor CC.
In the bit-lines BL, a bit-line BLt<k> and a bit-line BLc<k> compose a complementary bit-line pair. Each complementary bit-line pair has a sense amplifier circuit SA formed therebetween.
The sense amplifier circuit SA includes a general differential amplification circuit (not shown in
The column gate 12 includes a set of selection transistors 121. Each of the transistors 121 is provided for the respective bit-lines BL. The gate of each selection transistor 121 is provided with a different column selection signal CSL for each complementary bit-line pair. Any complementary bit-line pair is selectively connected to a read amplifier 13 and a write buffer 21 via a data-line pair of DQt and DQc. Turning on the selection transistors 121 causes reading of data from the memory cells MC and writing of data to the memory cells MC connected to the complementary bit-line pair.
The read amplifier 13 is activated by a read-enable signal RE. The amplifier 13 is connected to the sense amplifier circuits SA via the column gate 12. The sense amplifier circuit SA amplifies the voltage of the complementary bit-line pair. The voltage is then further amplified by the read amplifier 13 that in turn outputs an amplification signal (read data) RD. The amplification signal RD is provided to an OR gate 14 and an AND gate 15. The other input terminal of each OR gate 14 and AND gate 15 is provided with an output signal RDEX from an AND gate 22 as will be described below.
In a normal read mode, the output signal RDEX from the AND gate 22 is “L,” and the output signal RDOR from the OR gate 14 varies synchronously with the amplification signal RD. The output signal RDOR is output externally via a multiplexer 16 and a read latch 17 as an output signal DOUT. The read latch 17 is provided with a clock signal CLKR. In response to the rising of the clock signal CLKR, the output signal DOUT is output externally.
The DRAM in this embodiment may also function as a twin-cell DRAM, if desired. Specifically, the DRAM in this embodiment usually has a configuration in which 1-bit data is held by one memory cell MC, and may temporarily have the twin-cell configuration in a specific operation mode.
The specific operation mode is described below. Specifically, in the specific operation mode, data in the memory cell MCo to be read (the copy-source memory cell (a first memory cell)) is written (copied) to a different memory cell MCc (a copy-destination memory cell (a second memory cell)). A multiplexer 19, a write latch 20, and the write buffer 21 function together as a write circuit to perform the copy operation. Although not shown, the copy-source and copy-destination memory cells MCo and MCc are subjected to the refresh control as in the conventional twin-cell configuration. In this case, two memory cells hold together 1-bit data, and so the refresh operation may be performed in a longer cycle than in the normal operation mode. The power consumption may thus be reduced.
First, data is read from the copy-source memory cell MCo and then held in the temporary write latch 20 (the write latch 20 functions as a data latch circuit that holds data read from the copy-source memory cell MCo).
Data is then read from the copy-destination memory cell MCc. This data and the data held in the write latch 20 (data read from the copy-source memory cell MCo) are then subjected to a logic operation in the OR gate 14 or the AND gate 15.
A scramble control circuit 18 functions as follows. According to a row address RA, the circuit 18 determines whether the copy-source memory cell MCo utilizes a scrambled writing (in which data different from the externally provided write data is written according to a specific rule). In accordance with the determination, the circuit 18 changes the logic of a control signal SCR. The multiplexer 16 uses the control signal SCR from the scramble control circuit 18 to selectively output the output signal RDOR from the OR gate 14 or the output signal RDAD from the AND gate 15 as a signal RDOUT. If the scrambled writing is not utilized, then the multiplexer 16 selects the output signal RDOR from the OR gate 14. If the scrambled writing is utilized, then the multiplexer 16 selects the output signal RDAD from the AND gate 15. The signal RDOUT is then temporarily held in the read latch 17. The read latch 17 outputs externally the signal RDOUT as an output signal DOUT in response to the clock signal CLKR.
The logic operation result is output externally as read data (the output signal DOUT). According to the logic operation result, data is written back to the copy-source memory cell MCo by the multiplexers 16 and 19, the write latch 20, and the write buffer 21. In this way, in the specific operation mode, the refresh control and the read operation are performed according to the twin-cell configuration. On the other hand, in the normal operation mode, 1-bit data is held in one memory cell. Accordingly, low power consumption may thus be provided, while increase in circuit area may be restricted.
The signal RDOUT is also provided to the multiplexer 19. The multiplexer 19 is also provided with an input signal DIN. The signal DIN is provided externally as write data in the normal data writing. In response to a control signal STDBY, the multiplexer 19 inputs selectively the input signal DIN and the signal RDOUT to the write latch 20 as a write input signal WDIN. The signal STDBY switches from “L” to “H” to change to the twin-cell configuration. If the control signal STDBY is “H,” the input of the signal DIN to the multiplexer 19 is inhibited and only the signal RDOUT is allowed to be input.
The signal RDOUT is input to the multiplexer 19 and is then output by the multiplexer 19 as the write input signal WDIN, and held in the write latch 20. The write latch 20 outputs, in response to a clock signal CLKW, a latched signal as a signal WD. When copying operation to the copy-destination memory cell MCc is performed, the signal WD is provided to the bit-line pair to which the memory cell MCc is connected, via the write buffer 21 and the column gate 12. The signal WD is also provided to the OR gate 14 and the AND gate 15 via the AND gate 22 as the signal RDEX.
The AND gate 22 receives the signal WD and an enable signal ORENB as input signals. The AND gate 22 then makes the logical AND of the two signals and outputs it as the signal RDEX. In other words, the AND gate 22 functions as a gate circuit that outputs the signal WD according to the enable signal ORENB. The signal RDEX output to the OR gate 14 or the NAND gate 15 causes the logic operation of data of the copy-source memory cell MCo and data of the copy-destination memory cell MCc.
With reference to
(1) Reading data from the copy-source memory cell MCo, and writing (copying) the read data to the copy-destination memory cell MCc. Note that although in the following description of the embodiments, the copy-source memory cell MCo and the copy-destination memory cell MCc are disposed along the same word-line WL, the present invention is not limited thereto, and a memory cell MC disposed along a word-line different from that of the copy-source memory cell MCo may be the copy-destination memory cell MCc.
(2) Reading data from the copy-source memory cell MCo and holding the data in the temporary latch circuit, reading data from the copy-destination memory cell MCc, and performing a logic operation of both read data. Outputting externally the logic operation result as read data, and using the logic operation result to write data back to the copy-source memory cell MCo.
First, with reference to
First, at time t0, the control signal STDBY changes from “L” to “H.” The data read mode in the twin-cell configuration thus starts.
Then, the word-line WL<n> connected to the to-be-read (copy-source) memory cell MCo rises from “L” to “H.” The complementary bit-line pair BLt<k> and BLc<k> connected to the memory cell MCo thus experience voltage rises corresponding to data held by the memory cell MCo. The voltage is amplified by the sense amplifier circuit SA.
Then at time t1, the column selection signal CSL<0> corresponding to the memory cell MCo rises “L” to “H.” The voltages of the complementary bit-line pair BLt<k> and BLc<k> thus appear on the data-lines DQt and DQc.
At the same time t1, the signal RE rises from “L” to “H,” causing the read amplifier 13 to further amplify the voltages on the data-lines DQt and DQc, and output them as the amplification signal RD. The amplification signal RD enters the OR gate 14 that in turn outputs the signal RDOR. The signal RDOR is then selected by the multiplexer 16 that in turn outputs the signal RDOUT.
The signal RDOUT is provided to the multiplexer 19 that in turn outputs the write input signal WDIN. The signal WDIN enters the write latch 20 that in turn holds it as the data read from the copy-source memory cell MCo. In the normal data write mode, the write latch 20 latches the input data WDIN as the write data. In contrast, in the twin-cell configuration data read mode, the latch 20 functions as a circuit to temporarily hold data of the copy-source memory cell MCo. In this way, the write latch 20 may serve both to temporarily hold written data in the normal data write mode and to temporarily hold data of the copy-source memory cell MCo in the twin-cell configuration data read mode.
The clock signal CLKW rises at the next timing, causing the write latch 20 to output the signal (write data) WD. The write buffer 21 buffers the signal WD. Then at time t2, the column selection signal CSL<1> rises, causing the write buffer to write data corresponding to the signal WD to the copy-destination memory cell MCc. Specifically, the bit-lines BLt<k+2> and BLc<k+2> to which the copy-destination memory cell MCc is connected experience voltage rises corresponding to the signal WD, i.e., data held by the copy-source memory cell MCo. Thus, the operation (1) is completed.
With reference now to
At time t5, the control signal STDBY changes from “H” to “L.” Then, the word-line WL<n> to which the copy-source memory cell MCo and the copy-destination memory cell MCc are connected rises from “L” to “H.” The complementary bit-line pair BLt<k> and BLc<k> to which the copy-source memory cell MCo is connected thus experience voltage rises corresponding to data held by the memory cell MCo. The complementary bit-line pair BLt<k+2> and BLc<k+2> to which the copy-destination memory cell MCc is connected experience voltage rises corresponding to data held by the memory cell MCc. Note that at the same time, the control signal SCR from the scramble control circuit 18 changes to “L.”
Then at time t6, the column selection signal CSL<0> rises from “L” to “H.” The voltages of the complementary bit-line pair BLt<k> and BLc<k> connected to the copy-source memory cell MCo are thus reflected to the data-lines DQt and DQc. The read-enable signal RE rises to “H,” making the signal RD to be a voltage corresponding to the voltages of the data-lines DQt and DQc. The signal RDOUT changes accordingly and is provided to the multiplexer 19. The signal WDIN also changes accordingly, and causes the write latch 20 to latch data read from the copy-source memory cell MCo.
Then at time t7, the column selection signal CSL<1> rises from “L” to “H.” The voltages of the complementary bit-line pair BLt<k+2> and BLc<k+2> connected to the copy-destination memory cell MCc are thus reflected to the data-lines DQt and DQc. The enable signal ORENB also rises from “L” to “H.” Data held by the write latch 20 (data read from the memory cell MCo) is thus provided to one input terminal of the OR gate 14 via the AND gate 22 as the signal RDEX. The other input terminal of the OR gate 14 receives the signal RD corresponding to data held by the memory cell MCc. The OR gate 14 performs the logical OR operation of the signal RDEX and the signal RD, and outputs the operation result as the signal RDOR. The signal RDOR enters the multiplexer 16 that in turn outputs externally the signal DOUT (read data). The signal DOUT also enters the multiplexer 19 and the write latch 20. Then at time t8, the column selection signal CSL<0> rises again from “L” to “H” for a predetermined period of time. The enable signal WE also rises to “H.” Data is thus written to the copy-source memory cell MCo according to the data held by the write latch 20. Specifically, according to the logical OR operation result in the OR gate 14, data is written back to the memory cell MCo. In this way, the operation (2) is ended and the reading in the twin-cell configuration is completed.
With reference now to
At time t10, the control signal STDBY changes to “H.” At time t12, the word-line WL<n> rises to “H,” reading data from the copy-source memory cell MCo. Then at time t13, the signals SEPS and SENS change to “L”, “H,” respectively. The sense amplifier circuit SNk connected to the complementary bit-line pair BLt<k> and BLc<k> is thus activated. The voltages of the complementary bit-lines BLt<k> and BLc<k> are thereby differentially amplified.
Then at time t14, the control signal MUXCP rises to “H.” The voltage of the bit-line BLt<k> is thus transferred to the bit-line BLt<k+2>. Then at time t15, the signals SEPD and SEND change to “L”, “H,” respectively. The sense amplifier circuit SNk+2 connected to the complementary bit-line pair BLt<k+2> and BLc<k+2> is thus activated. The voltages of the complementary bit-lines BLt<k+2> and BLc<k+2> are thereby differentially amplified. In this way, data of the copy-source memory cell MCo is copied to the copy-destination memory cell MCc. In the first embodiment, data needs to be written to the write latch 20 for copy operation. In this embodiment, however, the copy operation may be completed within the memory cell array, thereby increasing the speed of the operation. Note that the operation (2) in the twin-cell configuration is as described with respect to
With reference to
Thus, although the invention has been described with respect to particular embodiments thereof, it is not limited to those embodiments. It will be understood that various modifications and additions and the like may be made without departing from the spirit of the present invention.
Miyano, Shinji, Fujii, Shuso, Iwai, Takayuki
Patent | Priority | Assignee | Title |
10013197, | Jun 01 2017 | Micron Technology, Inc. | Shift skip |
10014034, | Oct 06 2016 | Micron Technology, Inc. | Shifting data in sensing circuitry |
10025593, | Jan 07 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Generating and executing a control flow |
10026459, | Feb 12 2016 | Micron Technology, Inc. | Data gathering in memory |
10032491, | Sep 03 2014 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in multiple columns |
10032493, | Jan 07 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Longest element length determination in memory |
10037785, | Jul 08 2016 | Micron Technology, Inc. | Scan chain operation in sensing circuitry |
10037786, | Dec 01 2014 | Micron Technology, Inc. | Apparatuses and methods for converting a mask to an index |
10042608, | May 11 2016 | Micron Technology, Inc.; Micron Technology, Inc | Signed division in memory |
10043556, | Sep 19 2013 | Micron Technology, Inc. | Data shifting |
10043570, | Apr 17 2017 | Micron Technology, Inc.; Micron Technology, Inc | Signed element compare in memory |
10048888, | Feb 10 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for partitioned parallel data movement |
10049054, | Apr 01 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Virtual register file |
10049707, | Jun 03 2016 | Micron Technology, Inc. | Shifting data |
10049721, | Mar 27 2017 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
10055196, | Nov 08 2013 | Micron Technology, Inc. | Division operations for memory |
10056122, | Jul 26 2013 | Micron Technology, Inc. | Apparatuses and methods for performing compare operations using sensing circuitry |
10061590, | Jan 07 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Generating and executing a control flow |
10068652, | Sep 03 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for determining population count |
10068664, | May 19 2017 | Micron Technology, Inc. | Column repair in memory |
10073635, | Dec 01 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Multiple endianness compatibility |
10073786, | May 28 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for compute enabled cache |
10074406, | Oct 29 2014 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
10074407, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for performing invert operations using sensing circuitry |
10074416, | Mar 28 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for data movement |
10090041, | Jun 05 2014 | Micro Technology, Inc. | Performing logical operations using sensing circuitry |
10120740, | Mar 22 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatus and methods for debugging on a memory device |
10134453, | Apr 19 2016 | Micron Technology, Inc. | Invert operations using sensing circuitry |
10140104, | Apr 14 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Target architecture determination |
10146537, | Mar 13 2015 | Lodestar Licensing Group LLC | Vector population count determination in memory |
10147467, | Apr 17 2017 | Micron Technology, Inc.; Micron Technology, Inc | Element value comparison in memory |
10147468, | Apr 24 2017 | Micron Technology, Inc. | Accessing data in memory |
10147480, | Oct 24 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Sort operation in memory |
10152271, | Jun 07 2017 | Micron Technology, Inc. | Data replication |
10152304, | Aug 03 2016 | Micron Technology, Inc. | Apparatuses and methods for random number generation |
10152374, | Jan 06 2016 | Micron Technology, Inc. | Error code calculation on sensing circuitry |
10153008, | Apr 20 2016 | Micron Technology, Inc.; Micron Technology, Inc | Apparatuses and methods for performing corner turn operations using sensing circuitry |
10153009, | Mar 04 2013 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
10157019, | Jun 22 2015 | Micron Technology, Inc. | Apparatuses and methods for data transfer from sensing circuitry to a controller |
10157126, | Sep 03 2014 | Micron Technology, Inc. | Swap operations in memory |
10162005, | Aug 09 2017 | Micron Technology, Inc. | Scan chain operations |
10163467, | Oct 16 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Multiple endianness compatibility |
10176851, | Feb 03 2015 | Micron Technology, Inc. | Loop structure for operations in memory |
10185674, | Mar 22 2017 | Micron Technology, Inc. | Apparatus and methods for in data path compute operations |
10186303, | Aug 08 2013 | Lodestar Licensing Group LLC | Apparatuses and methods for performing logical operations using sensing circuitry |
10199088, | Mar 10 2016 | Micron Technology, Inc. | Apparatuses and methods for cache invalidate |
10210911, | Jun 05 2014 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry in a memory device |
10217499, | Feb 19 2016 | Micron Technology, Inc. | Modified decode for corner turn |
10236037, | Dec 21 2015 | Micron Technology, Inc. | Data transfer in sensing components |
10236038, | May 15 2017 | Lodestar Licensing Group LLC | Bank to bank data transfer |
10242721, | Oct 06 2016 | Micron Technology, Inc. | Shifting data in sensing circuitry |
10242722, | Jul 21 2016 | Micron Technology, Inc. | Shifting data in sensing circuitry |
10249350, | Jun 05 2014 | Micron Technology, Inc. | Apparatuses and methods for parity determination using sensing circuitry |
10255193, | Jun 05 2014 | Micron Technology, Inc. | Virtual address table |
10261691, | Oct 03 2014 | Micron Technology, Inc. | Computing reduction and prefix sum operations in memory |
10262701, | Jun 07 2017 | Micron Technology, Inc. | Data transfer between subarrays in memory |
10262721, | Mar 10 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for cache invalidate |
10268389, | Feb 22 2017 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
10289542, | Feb 06 2015 | Micron Technology, Inc | Apparatuses and methods for memory device as a store for block program instructions |
10290344, | Jun 05 2014 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
10303632, | Jul 26 2016 | Micron Technology, Inc. | Accessing status information |
10304502, | Apr 24 2017 | Micron Technology, Inc. | Accessing data in memory |
10304519, | Jun 05 2014 | Micron Technology, Inc. | Apparatuses and methods for performing an exclusive or operation using sensing circuitry |
10311922, | Jun 03 2016 | Micron Technology, Inc. | Shifting data |
10318168, | Jun 19 2017 | Micron Technology, Inc. | Apparatuses and methods for simultaneous in data path compute operations |
10324654, | Feb 10 2016 | Micron Technology, Inc. | Apparatuses and methods for partitioned parallel data movement |
10332586, | Dec 19 2017 | Micron Technology, Inc. | Apparatuses and methods for subrow addressing |
10346092, | Aug 31 2017 | Lodestar Licensing Group LLC | Apparatuses and methods for in-memory operations using timing circuitry |
10353618, | Feb 17 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for data movement |
10360147, | Jun 05 2014 | Micron Technology, Inc. | Data storage layout |
10360949, | Jul 21 2016 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in a sensing circuitry element |
10365851, | Mar 12 2015 | Micron Technology, Inc | Apparatuses and methods for data movement |
10372612, | May 28 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for compute enabled cache |
10373666, | Nov 08 2016 | Micron Technology, Inc | Apparatuses and methods for compute components formed over an array of memory cells |
10379772, | Mar 16 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for operations using compressed and decompressed data |
10381065, | Jun 05 2014 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
10387046, | Jun 22 2016 | Lodestar Licensing Group LLC | Bank to bank data transfer |
10387055, | Dec 01 2014 | Micron Technology, Inc. | Multiple endianness compatibility |
10387058, | Sep 29 2016 | Micron Technology, Inc. | Apparatuses and methods to change data category values |
10387121, | Aug 03 2016 | Micron Technology, Inc. | Apparatuses and methods for random number generation |
10387299, | Jul 20 2016 | Micron Technology, Inc. | Apparatuses and methods for transferring data |
10388333, | Oct 20 2016 | Micron Technology, Inc. | Apparatuses and methods to selectively perform logical operations |
10388334, | Jul 08 2016 | Micron Technology, Inc. | Scan chain operation in sensing circuitry |
10388360, | Jul 19 2016 | Micron Technology, Inc. | Utilization of data stored in an edge section of an array |
10388393, | Mar 22 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatus and methods for debugging on a host and memory device |
10402340, | Feb 21 2017 | Lodestar Licensing Group LLC | Memory array page table walk |
10403352, | Feb 22 2017 | Micron Technology, Inc. | Apparatuses and methods for compute in data path |
10409554, | Sep 03 2014 | Micron Technology, Inc. | Multiplication operations in memory |
10409555, | Sep 03 2014 | Micron Technology, Inc. | Multiplication operations in memory |
10409557, | Mar 17 2016 | Micron Technology, Inc. | Signed division in memory |
10409739, | Oct 24 2017 | Micron Technology, Inc.; Micron Technology, Inc | Command selection policy |
10416927, | Aug 31 2017 | Micron Technology, Inc.; Micron Technology, Inc | Processing in memory |
10418092, | Apr 16 2015 | Micron Technology, Inc. | Apparatuses and methods to reverse data stored in memory |
10418123, | May 19 2017 | Micron Technology, Inc. | Column repair in memory |
10423353, | Nov 11 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for memory alignment |
10423486, | Jan 06 2016 | Micron Technology, Inc. | Error code calculation on sensing circuitry |
10424350, | Jun 05 2014 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
10430244, | Mar 28 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods to determine timing of operations |
10431263, | Jun 12 2015 | Micron Technology, Inc. | Simulating access lines |
10431264, | Mar 04 2013 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
10437557, | Jan 31 2018 | Micron Technology, Inc. | Determination of a match between data values stored by several arrays |
10438653, | Dec 19 2017 | Micron Technology, Inc. | Apparatuses and methods for subrow addressing |
10440341, | Jun 07 2018 | Lodestar Licensing Group LLC | Image processor formed in an array of memory cells |
10446221, | Mar 27 2017 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
10452578, | Mar 22 2017 | Micron Technology, Inc. | Apparatus and methods for in data path compute operations |
10453499, | Jun 05 2014 | Micron Technology, Inc. | Apparatuses and methods for performing an in-place inversion using sensing circuitry |
10453502, | Apr 04 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Memory bank power coordination including concurrently performing a memory operation in a selected number of memory regions |
10460773, | Dec 01 2014 | Micron Technology, Inc. | Apparatuses and methods for converting a mask to an index |
10466928, | Sep 15 2016 | Micron Technology, Inc. | Updating a register in memory |
10468087, | Jul 28 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for operations in a self-refresh state |
10474581, | Mar 25 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for cache operations |
10475499, | May 23 2016 | Micron Technology, Inc. | Power reduction for a sensing operation of a memory cell |
10482948, | Mar 28 2016 | Micron Technology, Inc. | Apparatuses and methods for data movement |
10483978, | Oct 16 2018 | Lodestar Licensing Group LLC | Memory device processing |
10490257, | Jun 05 2014 | Micron Technology, Inc. | Comparison operations in memory |
10496286, | Feb 06 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for parallel writing to multiple memory device structures |
10496310, | Jun 01 2017 | Micron Technology, Inc. | Shift skip |
10510381, | Jun 07 2017 | Micron Technology, Inc. | Data transfer between subarrays in memory |
10522199, | Feb 06 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for scatter and gather |
10522210, | Dec 14 2017 | Micron Technology, Inc.; Micron Technology, Inc | Apparatuses and methods for subarray addressing |
10522211, | Jun 05 2014 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
10522212, | Mar 10 2015 | Micron Technology, Inc | Apparatuses and methods for shift decisions |
10529387, | Oct 29 2014 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
10529409, | Oct 13 2016 | Micron Technology, Inc. | Apparatuses and methods to perform logical operations using sensing circuitry |
10534553, | Aug 30 2017 | LODESTAR LICENSING GROUP, LLC | Memory array accessibility |
10535384, | Aug 08 2013 | Lodestar Licensing Group LLC | Apparatuses and methods for performing logical operations using sensing circuitry |
10536149, | Oct 16 2018 | Micron Technology, Inc. | Memory device processing |
10540093, | Oct 03 2014 | Micron Technology, Inc. | Multidimensional contiguous memory allocation |
10540097, | Feb 22 2017 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
10540144, | May 11 2016 | Micron Technology, Inc. | Signed division in memory |
10559347, | Mar 10 2016 | Lodestar Licensing Group LLC | Processing in memory (PIM) capable memory device having timing circuitry to control timing of operations |
10559360, | Sep 03 2014 | Micron Technology, Inc. | Apparatuses and methods for determining population count |
10579336, | Nov 08 2013 | Micron Technology, Inc. | Division operations for memory |
10581434, | Oct 16 2018 | Micron Technology, Inc. | Memory device processing |
10593376, | Jan 07 2015 | Micron Technology, Inc. | Longest element length determination in memory |
10593377, | Oct 16 2014 | Micron Technology, Inc. | Multiple endianness compatibility |
10593418, | Jun 05 2014 | Micron Technology, Inc. | Comparison operations in memory |
10600473, | Oct 13 2016 | Micron Technology, Inc. | Apparatuses and methods to perform logical operations using sensing circuitry |
10606587, | Aug 24 2016 | Lodestar Licensing Group LLC | Apparatus and methods related to microcode instructions indicating instruction types |
10607665, | Apr 07 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Span mask generation |
10614875, | Jan 30 2018 | Lodestar Licensing Group LLC | Logical operations using memory cells |
10622034, | Apr 17 2017 | Micron Technology, Inc. | Element value comparison in memory |
10628085, | Aug 31 2017 | Micron Technology, Inc. | Processing in memory |
10643673, | Jul 26 2013 | Micron Technology, Inc. | Apparatuses and methods for performing compare operations using sensing circuitry |
10643674, | Apr 19 2016 | Micron Technology, Inc. | Invert operations using sensing circuitry |
10658017, | Jun 03 2016 | Micron Technology, Inc. | Shifting data |
10685699, | Oct 24 2014 | Micron Technology, Inc. | Sort operation in memory |
10691620, | Aug 17 2015 | Micron Technology, Inc. | Encryption of executables in computational memory |
10698734, | Mar 28 2016 | Micron Technology, Inc. | Apparatuses and methods to determine timing of operations |
10699756, | Apr 20 2016 | Micron Technology, Inc. | Apparatuses and methods for performing corner turn operations using sensing circuitry |
10699772, | Jul 19 2016 | Micron Technology, Inc. | Utilization of instructions stored in an edge section of an array of memory cells |
10705798, | Sep 03 2014 | Micron Technology, Inc. | Multiplication operations in memory |
10712389, | Aug 09 2017 | Micron Technology, Inc. | Scan chain operations |
10713011, | Sep 03 2014 | Micron Technology, Inc. | Multiplication operations in memory |
10725680, | Sep 29 2016 | Micron Technology, Inc. | Apparatuses and methods to change data category values |
10725696, | Apr 12 2018 | Micron Technology, Inc | Command selection policy with read priority |
10725736, | Jan 31 2018 | Micron Technology, Inc. | Determination of a match between data values stored by several arrays |
10725952, | Jul 26 2016 | Micron Technology, Inc. | Accessing status information |
10726919, | Mar 31 2014 | Micron Technology, Inc. | Apparatuses and methods for comparing data patterns in memory |
10733089, | Jul 20 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for write address tracking |
10734038, | Jun 05 2014 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
10741239, | Aug 31 2017 | Micron Technology, Inc | Processing in memory device including a row address strobe manager |
10741241, | Dec 14 2017 | Micron Technology, Inc. | Apparatuses and methods for subarray addressing in a memory device |
10754787, | Jun 05 2014 | Micron Technology, Inc. | Virtual address table |
10776037, | Jun 07 2017 | Micron Technology, Inc. | Data replication |
10782980, | Jan 07 2015 | Micron Technology, Inc. | Generating and executing a control flow |
10783942, | Feb 19 2016 | Micron Technology, Inc. | Modified decode for corner turn |
10789996, | Jul 21 2016 | Micron Technology, Inc. | Shifting data in sensing circuitry |
10795582, | Jun 19 2017 | Micron Technology, Inc. | Apparatuses and methods for simultaneous in data path compute operations |
10795653, | Apr 14 2015 | Micron Technology, Inc. | Target architecture determination |
10796733, | Mar 04 2013 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
10796736, | May 15 2017 | Lodestar Licensing Group LLC | Bank to bank data transfer |
10817360, | Mar 22 2016 | Micron Technology, Inc. | Apparatus and methods for debugging on a memory device |
10817414, | Feb 06 2015 | Micron Technology, Inc. | Apparatuses and methods for memory device as a store for block program instructions |
10817442, | Mar 22 2017 | Micron Technology, Inc. | Apparatus and methods for in data path compute operations |
10831682, | Oct 24 2017 | Micron Technology, Inc. | Command selection policy |
10838899, | Mar 21 2017 | Micron Technology, Inc. | Apparatuses and methods for in-memory data switching networks |
10839867, | Jun 05 2014 | Micron Technology, Inc. | Apparatuses and methods for parity determination using sensing circuitry |
10839870, | Jul 21 2016 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in a sensing circuitry element |
10839890, | Dec 19 2017 | Micron Technology, Inc. | Apparatuses and methods for subrow addressing |
10839892, | Jun 05 2014 | Micron Technology, Inc. | Comparison operations in memory |
10854247, | Oct 20 2016 | Micron Technology, Inc. | Apparatuses and methods to selectively perform logical operations |
10854269, | Nov 08 2016 | Micron Technology, Inc. | Apparatuses and methods for compute components formed over an array of memory cells |
10861563, | Sep 03 2014 | Micron Technology, Inc. | Apparatuses and methods for determining population count |
10867662, | Dec 14 2017 | Micron Technology, Inc. | Apparatuses and methods for subarray addressing |
10877694, | Apr 12 2018 | Micron Technology, Inc. | Command selection policy with read priority |
10878856, | Jun 07 2017 | Micron Technology, Inc. | Data transfer between subarrays in memory |
10878863, | Aug 08 2013 | Lodestar Licensing Group LLC | Apparatuses and methods for performing logical operations using sensing circuitry |
10878883, | Mar 10 2016 | Micron Technology, Inc. | Apparatuses and methods for cache invalidate |
10878884, | Apr 16 2015 | Micron Technology, Inc. | Apparatuses and methods to reverse data stored in memory |
10878885, | Mar 27 2017 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
10896042, | Mar 13 2015 | Lodestar Licensing Group LLC | Vector population count determination via comparison iterations in memory |
10897605, | Jun 07 2018 | Lodestar Licensing Group LLC | Image processor formed in an array of memory cells |
10902906, | Mar 10 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for logic/memory devices |
10908876, | Jan 31 2018 | Micron Technology, Inc. | Determination of a match between data values stored by several arrays |
10915249, | Feb 22 2017 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
10915263, | Feb 10 2016 | Micron Technology, Inc. | Apparatuses and methods for partitioned parallel data movement |
10929023, | Jun 22 2016 | Lodestar Licensing Group LLC | Bank to bank data transfer |
10929283, | Jul 20 2016 | Micron Technology, Inc. | Apparatuses and methods for transferring data |
10936235, | Mar 12 2015 | Micron Technology, Inc. | Apparatuses and methods for data movement |
10942652, | Feb 06 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for parallel writing to multiple memory device structures |
10942843, | Apr 25 2017 | Lodestar Licensing Group LLC | Storing data elements of different lengths in respective adjacent rows or columns according to memory shapes |
10949299, | Jan 06 2016 | Micron Technology, Inc. | Error code calculation on sensing circuitry |
10956043, | Oct 03 2014 | Micron Technology, Inc. | Computing reduction and prefix sum operations in memory |
10956439, | Feb 19 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Data transfer with a bit vector operation device |
10963398, | Apr 01 2015 | Micron Technology, Inc. | Virtual register file |
10964358, | Feb 06 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for scatter and gather |
10970218, | May 28 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for compute enabled cache |
10971214, | Oct 13 2016 | Micron Technology, Inc. | Apparatuses and methods to perform logical operations using sensing circuitry |
10976943, | Sep 29 2016 | Micron Technology, Inc. | Apparatuses and methods to change data category values |
10977033, | Mar 25 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Mask patterns generated in memory from seed vectors |
10983706, | Dec 01 2014 | Micron Technology, Inc. | Multiple endianness compatibility |
10984841, | Jan 07 2015 | Micron Technology, Inc. | Longest element length determination in memory |
10984842, | Oct 16 2014 | Micron Technology, Inc. | Multiple endianness compatibility |
11010085, | Feb 17 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for data movement |
11011220, | Feb 22 2017 | Micron Technology, Inc. | Apparatuses and methods for compute in data path |
11016706, | Aug 31 2017 | Lodestar Licensing Group LLC | Apparatuses for in-memory operations |
11016811, | Mar 28 2016 | Micron Technology, Inc. | Apparatuses and methods to determine timing of operations |
11029951, | Aug 15 2016 | Micron Technology, Inc. | Smallest or largest value element determination |
11048428, | Nov 11 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for memory alignment |
11048652, | Mar 22 2017 | Micron Technology, Inc. | Apparatus and methods for in data path compute operations |
11050425, | Oct 16 2018 | Micron Technology, Inc. | Memory device processing |
11055026, | Sep 15 2016 | Micron Technology, Inc. | Updating a register in memory |
11061671, | Aug 24 2016 | Lodestar Licensing Group LLC | Apparatus and methods related to microcode instructions indicating instruction types |
11074988, | Mar 22 2016 | Micron Technology, Inc. | Apparatus and methods for debugging on a host and memory device |
11106389, | Jun 22 2015 | Micron Technology, Inc. | Apparatuses and methods for data transfer from sensing circuitry to a controller |
11107510, | Apr 04 2016 | Micron Technology, Inc. | Memory bank power coordination including concurrently performing a memory operation in a selected number of memory regions |
11107520, | Mar 10 2015 | Micron Technology, Inc. | Apparatuses and methods for shift decisions |
11120850, | Jun 05 2014 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
11126557, | Mar 25 2016 | Micron Technology, Inc. | Apparatuses and methods for cache operations |
11150824, | Mar 16 2016 | Micron Technology, Inc. | Apparatuses and methods for operations using compressed and decompressed data |
11163495, | Aug 31 2017 | Micron Technology, Inc. | Processing in memory |
11175915, | Oct 10 2018 | Micron Technology, Inc. | Vector registers implemented in memory |
11182085, | Aug 30 2017 | LODESTAR LICENSING GROUP, LLC | Memory array accessibility |
11182304, | Feb 21 2017 | Lodestar Licensing Group LLC | Memory array page table walk |
11184446, | Dec 05 2018 | Micron Technology, Inc.; Micron Technology, Inc | Methods and apparatus for incentivizing participation in fog networks |
11194477, | Jan 31 2018 | Micron Technology, Inc. | Determination of a match between data values stored by three or more arrays |
11195092, | Mar 22 2017 | Micron Technology, Inc. | Apparatuses and methods for operating neural networks |
11205497, | Jun 05 2014 | Micron Technology, Inc. | Comparison operations in memory |
11222260, | Mar 22 2017 | Micron Technology, Inc. | Apparatuses and methods for operating neural networks |
11227641, | Jul 21 2020 | Micron Technology, Inc | Arithmetic operations in memory |
11237808, | Apr 14 2015 | Micron Technology, Inc. | Target architecture determination |
11238914, | Nov 08 2016 | Micron Technology, Inc. | Apparatuses and methods for compute components formed over an array of memory cells |
11238920, | Jun 05 2014 | Micron Technology, Inc. | Comparison operations in memory |
11263123, | Feb 06 2015 | Micron Technology, Inc. | Apparatuses and methods for memory device as a store for program instructions |
11276439, | Mar 04 2013 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
11276457, | Aug 31 2017 | Micron Technology, Inc. | Processing in memory |
11282563, | Jul 28 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for operations in a self-refresh state |
11288214, | Oct 24 2017 | Micron Technology, Inc. | Command selection policy |
11314429, | Mar 16 2016 | Micron Technology, Inc. | Apparatuses and methods for operations using compressed and decompressed data |
11315626, | Oct 24 2014 | Micron Technology, Inc. | Sort operation in memory |
11334362, | Jan 07 2015 | Micron Technology, Inc. | Generating and executing a control flow |
11340983, | Jan 06 2016 | Micron Technology, Inc. | Error code calculation on sensing circuitry |
11355178, | Jun 05 2014 | Micron Technology, Inc. | Apparatuses and methods for performing an exclusive or operation using sensing circuitry |
11360768, | Aug 14 2019 | Micron Technolgy, Inc. | Bit string operations in memory |
11372550, | Jun 19 2017 | Micron Technology, Inc. | Apparatuses and methods for simultaneous in data path compute operations |
11393531, | Mar 31 2014 | Micron Technology, Inc. | Apparatuses and methods for comparing data patterns in memory |
11397688, | Oct 10 2018 | Lodestar Licensing Group LLC | Coherent memory access |
11398264, | Jul 08 2019 | Micron Technology, Inc. | Methods and apparatus for dynamically adjusting performance of partitioned memory |
11404109, | Jan 30 2018 | Lodestar Licensing Group LLC | Logical operations using memory cells |
11410717, | Mar 27 2017 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
11422720, | Sep 29 2016 | Micron Technology, Inc. | Apparatuses and methods to change data category values |
11422933, | Jun 05 2014 | Micron Technology, Inc. | Data storage layout |
11437079, | Apr 07 2016 | Micron Technology, Inc. | Span mask generation |
11445157, | Jun 07 2018 | Lodestar Licensing Group LLC | Image processor formed in an array of memory cells |
11449577, | Nov 20 2019 | Micron Technology, Inc. | Methods and apparatus for performing video processing matrix operations within a memory array |
11468944, | Jul 19 2016 | Micron Technology, Inc. | Utilization of data stored in an edge section of an array |
11474965, | Mar 21 2017 | Micron Technology, Inc. | Apparatuses and methods for in-memory data switching networks |
11482260, | Feb 06 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for scatter and gather |
11494296, | Apr 25 2017 | Lodestar Licensing Group LLC | Memory shapes |
11495274, | Aug 08 2013 | Lodestar Licensing Group LLC | Apparatuses and methods for performing logical operations using sensing circuitry |
11513713, | Feb 10 2016 | Micron Technology, Inc. | Apparatuses and methods for partitioned parallel data movement |
11513945, | Jul 20 2016 | Micron Technology, Inc. | Apparatuses and methods for transferring data using a cache |
11514957, | May 15 2017 | Lodestar Licensing Group LLC | Bank to bank data transfer |
11526293, | Jun 07 2017 | Micron Technology, Inc. | Data replication |
11526355, | Aug 15 2016 | Micron Technology, Inc. | Smallest or largest value element determination |
11550742, | Mar 22 2017 | Micron Technology, Inc. | Apparatus and methods for in data path compute operations |
11556339, | Oct 10 2018 | Micron Technology, Inc. | Vector registers implemented in memory |
11557326, | Apr 04 2016 | Micron Techology, Inc. | Memory power coordination |
11586389, | Aug 31 2017 | Micron Technology, Inc. | Processing in memory |
11593027, | Apr 12 2018 | Micron Technology, Inc. | Command selection policy with read priority |
11593200, | Jan 06 2016 | Micron Technology, Inc. | Error code calculation on sensing circuitry |
11594274, | Mar 10 2016 | Lodestar Licensing Group LLC | Processing in memory (PIM)capable memory device having timing circuity to control timing of operations |
11599475, | May 28 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for compute enabled cache |
11614877, | Mar 12 2015 | Micron Technology, Inc. | Apparatuses and methods for data movement |
11614878, | Feb 17 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for data movement |
11620228, | Oct 10 2018 | Lodestar Licensing Group LLC | Coherent memory access |
11625194, | Sep 15 2016 | Micron Technology, Inc. | Updating a register in memory |
11625336, | Aug 17 2015 | Micron Technology, Inc. | Encryption of executables in computational memory |
11663005, | Mar 13 2015 | Lodestar Licensing Group LLC | Vector population count determination via comparsion iterations in memory |
11663137, | Feb 21 2017 | Lodestar Licensing Group LLC | Memory array page table walk |
11664064, | Jul 28 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for operations in a self-refresh state |
11675538, | Aug 31 2017 | Lodestar Licensing Group LLC | Apparatuses and methods for in-memory operations |
11681440, | Feb 06 2015 | Lodestar Licensing Group LLC | Apparatuses and methods for parallel writing to multiple memory device structures |
11682449, | Feb 22 2017 | Micron Technology, Inc. | Apparatuses and methods for compute in data path |
11693561, | Jun 19 2017 | Micron Technology, Inc. | Apparatuses and methods for simultaneous in data path compute operations |
11693576, | Nov 11 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for memory alignment |
11693783, | Mar 25 2016 | Micron Technology, Inc. | Apparatuses and methods for cache operations |
11709673, | Aug 14 2019 | Micron Technology, Inc. | Bit string operations in memory |
11714640, | Aug 14 2019 | Micron Technology, Inc. | Bit string operations in memory |
11726791, | Jan 07 2015 | Micron Technology, Inc. | Generating and executing a control flow |
11727963, | Mar 04 2013 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
11727964, | Jul 21 2020 | Micron Technology, Inc. | Arithmetic operations in memory |
11728813, | Oct 16 2018 | Micron Technology, Inc. | Memory device processing |
11755206, | Jun 22 2016 | Lodestar Licensing Group LLC | Bank to bank data transfer |
11768600, | Oct 03 2014 | Micron Technology, Inc. | Computing reduction and prefix sum operations in memory |
11769053, | Mar 22 2017 | Micron Technology, Inc. | Apparatuses and methods for operating neural networks |
11775296, | Mar 25 2016 | Micron Technology, Inc. | Mask patterns generated in memory from seed vectors |
11782688, | Apr 14 2015 | Micron Technology, Inc. | Target architecture determination |
11816123, | Feb 19 2016 | Lodestar Licensing Group LLC | Data transfer with a bit vector operation device |
11842191, | Aug 24 2016 | Lodestar Licensing Group LLC | Apparatus and methods related to microcode instructions indicating instruction types |
11853385, | Dec 05 2019 | Micron Technology, Inc.; Micron Technology, Inc | Methods and apparatus for performing diversity matrix operations within a memory array |
11886715, | Aug 30 2017 | LODESTAR LICENSING GROUP, LLC | Memory array accessibility |
11894045, | Aug 31 2017 | LODESTAR LICENSING GROUP, LLC | Processing in memory implementing VLIW controller |
11915741, | Mar 10 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for logic/memory devices |
11928177, | Nov 20 2019 | Micron Technology, Inc. | Methods and apparatus for performing video processing matrix operations within a memory array |
11967361, | Jun 05 2014 | Micron Technology, Inc | Comparison operations in memory |
11991488, | Jun 07 2018 | Lodestar Licensing Group LLC | Apparatus and method for image signal processing |
12117929, | Apr 25 2017 | Lodestar Licensing Group LLC | Memory shapes |
12118056, | May 03 2019 | Micron Technology, Inc. | Methods and apparatus for performing matrix transformations within a memory array |
12142347, | Aug 08 2013 | Lodestar Licensing Group LLC | Apparatuses and methods for performing logical operations using sensing circuitry |
12159063, | Aug 31 2017 | Lodestar Licensing Group LLC | Apparatuses and methods for in-memory operations |
12165691, | Jul 28 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for operations in a self-refresh state |
12183387, | Jan 30 2018 | Lodestar Licensing Group LLC | Logical operations using memory cells |
12183418, | May 15 2017 | Lodestar Licensing Group LLC | Bank to bank data transfer |
9019785, | Sep 19 2013 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Data shifting via a number of isolation devices |
9430191, | Nov 08 2013 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Division operations for memory |
9437256, | Sep 19 2013 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Data shifting |
9449674, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Performing logical operations using sensing circuitry |
9449675, | Oct 31 2013 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for identifying an extremum value stored in an array of memory cells |
9455020, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for performing an exclusive or operation using sensing circuitry |
9466340, | Jul 26 2013 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for performing compare operations using sensing circuitry |
9472265, | Mar 04 2013 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for performing logical operations using sensing circuitry |
9496023, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Comparison operations on logical representations of values in memory |
9530475, | Aug 30 2013 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Independently addressable memory array address spaces |
9583163, | Feb 03 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Loop structure for operations in memory |
9589602, | Sep 03 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Comparison operations in memory |
9589607, | Aug 08 2013 | Lodestar Licensing Group LLC | Apparatuses and methods for performing logical operations using sensing circuitry |
9601166, | Mar 11 2015 | Micron Technology, Inc. | Data shift by elements of a vector in memory |
9659605, | Apr 20 2016 | Micron Technology, Inc.; Micron Technology, Inc | Apparatuses and methods for performing corner turn operations using sensing circuitry |
9659610, | May 18 2016 | Micron Technology, Inc. | Apparatuses and methods for shifting data |
9697876, | Mar 01 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Vertical bit vector shift in memory |
9704540, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for parity determination using sensing circuitry |
9704541, | Jun 12 2015 | Micron Technology, Inc. | Simulating access lines |
9711206, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Performing logical operations using sensing circuitry |
9711207, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Performing logical operations using sensing circuitry |
9740607, | Sep 03 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Swap operations in memory |
9741399, | Mar 11 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Data shift by elements of a vector in memory |
9741427, | Jun 05 2014 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
9747960, | Dec 01 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for converting a mask to an index |
9747961, | Sep 03 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Division operations in memory |
9761300, | Nov 22 2016 | Micron Technology, Inc. | Data shift apparatuses and methods |
9767864, | Jul 21 2016 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in a sensing circuitry element |
9767865, | Jul 26 2013 | Micron Technology, Inc. | Apparatuses and methods for performing compare operations using sensing circuitry |
9779019, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Data storage layout |
9779784, | Oct 29 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for performing logical operations using sensing circuitry |
9779789, | Sep 03 2014 | Micron Technology, Inc. | Comparison operations in memory |
9786335, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for performing logical operations using sensing circuitry |
9799378, | Jul 26 2013 | Micron Technology, Inc. | Apparatuses and methods for performing compare operations using sensing circuitry |
9805772, | Oct 20 2016 | Micron Technology, Inc.; Micron Technology, Inc | Apparatuses and methods to selectively perform logical operations |
9818459, | Apr 19 2016 | Micron Technology, Inc. | Invert operations using sensing circuitry |
9830955, | Sep 19 2013 | Micron Technology, Inc. | Data shifting |
9830999, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Comparison operations in memory |
9836218, | Oct 03 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Computing reduction and prefix sum operations in memory |
9847110, | Sep 03 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for storing a data value in multiple columns of an array corresponding to digits of a vector |
9892766, | Mar 04 2013 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
9892767, | Feb 12 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Data gathering in memory |
9898252, | Sep 03 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Multiplication operations in memory |
9898253, | Mar 11 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Division operations on variable length elements in memory |
9899064, | May 18 2016 | Micron Technology, Inc. | Apparatuses and methods for shifting data |
9899068, | Aug 08 2013 | Lodestar Licensing Group LLC | Apparatuses and methods for performing logical operations using sensing circuitry |
9899070, | Feb 19 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Modified decode for corner turn |
9904515, | Sep 03 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Multiplication operations in memory |
9905276, | Dec 21 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Control of sensing components in association with performing operations |
9910637, | Mar 17 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Signed division in memory |
9910787, | Jun 05 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Virtual address table |
9921777, | Jun 22 2015 | Micron Technology, Inc. | Apparatuses and methods for data transfer from sensing circuitry to a controller |
9928887, | Mar 11 2015 | Micron Technology, Inc. | Data shift by elements of a vector in memory |
9934856, | Mar 31 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods for comparing data patterns in memory |
9940026, | Oct 03 2014 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Multidimensional contiguous memory allocation |
9940981, | Sep 03 2014 | Micron Technology, Inc. | Division operations in memory |
9940985, | Sep 03 2014 | Micron Technology, Inc. | Comparison operations in memory |
9940990, | Nov 22 2016 | Micron Technology, Inc. | Data shift apparatuses and methods |
9947376, | Mar 01 2016 | Micron Technology, Inc. | Vertical bit vector shift in memory |
9952925, | Jan 06 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Error code calculation on sensing circuitry |
9959913, | Mar 04 2013 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
9959923, | Apr 16 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatuses and methods to reverse data stored in memory |
9966116, | Jul 21 2016 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in a sensing circuitry element |
9971541, | Feb 17 2016 | Lodestar Licensing Group LLC | Apparatuses and methods for data movement |
9972367, | Jul 21 2016 | Micron Technology, Inc. | Shifting data in sensing circuitry |
9990181, | Aug 03 2016 | Micron Technology, Inc. | Apparatuses and methods for random number generation |
9990966, | Jun 12 2015 | Micron Technology, Inc. | Simulating access lines |
9990967, | Apr 20 2016 | Micron Technology, Inc. | Apparatuses and methods for performing corner turn operations using sensing circuitry |
9996479, | Aug 17 2015 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Encryption of executables in computational memory |
9997212, | Apr 24 2017 | Micron Technology, Inc. | Accessing data in memory |
9997232, | Mar 10 2016 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Processing in memory (PIM) capable memory device having sensing circuitry performing logic operations |
ER4403, | |||
ER8375, |
Patent | Priority | Assignee | Title |
6850449, | Oct 11 2002 | Renesas Electronics Corporation | Semiconductor memory device having mode storing one bit data in two memory cells and method of controlling same |
20100157693, | |||
JP2004134026, | |||
JP2005190585, | |||
JP2059943, | |||
JP9017178, |
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