Embodiments described herein provide optical systems that can mix colors to produce illumination patterns having a large area with uniform color. One embodiment of an optical system can include a set of optical units that each produces an illumination pattern with uniform color and intensity. The optical units are spaced so that the individual illumination patterns overlap to create an overall illumination pattern with an overlap area. In the overlap area, the colors emitted by the individual optical units mix to create a desired color. Embodiments of optical systems can provide beam control so that the optical units emit a high percentage of light in beam.
|
1. An optical system comprising:
a base;
a housing coupled to the base, the housing having a set of outer sidewalls;
an array of leds disposed in the housing;
a lens array optically coupled to the array of leds, the lens array further comprising a set of lenses disposed in the housing, wherein:
each lens in the set of lenses is positioned to receive light from a corresponding led and is separated from the corresponding led by a gap;
each lens in the set of lenses is configured to project a majority of light entering the lens in a selected half angle in a rectangular illumination pattern; and
the lenses in the set of lenses are spaced so that illumination patterns from the lenses overlap to produce a rectangular overall illumination pattern in the selected half angle, the illumination pattern with an overlap area;
a lens cover coupled to the housing; and
an encapsulant disposed between each led and corresponding lens.
2. The optical system of
3. The optical system of
4. The optical system of
5. The optical system of
a first phosphor disposed between a first led and a corresponding first lens that down converts light from the first led to red light;
a second phosphor disposed between a second led and a corresponding second lens that down converts light from the second led to green light.
6. The optical system of
7. The optical system of
8. The optical system of
9. The optical system of
the overlap area size is dependent on a lens to target surface distance; and
the border area width is independent of the lens to target surface distance.
10. The optical system of
11. The optical system of
13. The optical system of
14. The optical system of
|
This application is a continuation of, and claims a benefit of priority under 35 U.S.C. 120 of the filing date of U.S. patent application Ser. No. 13/077,594, entitled “System and Method for a Phosphor Coated Lens” by Duong et al., filed Mar. 31, 2011, which claims the benefit of priority under 35 U.S.C. 119(e) to U.S. Provisional Patent Application No. 61/319,739, entitled “System and Method for Phosphor Coated Lens,” by Ko et al., filed Mar. 31, 2010, and claims the benefit of priority under 35 U.S.C. 120 as a continuation-in-part of U.S. patent application Ser. No. 12/646,570, entitled “System and Method for a Phosphor Coated Lens” by Ko et al., filed Dec. 23, 2009, issued as U.S. Pat. No. 8,449,128 on May 28, 2013, which claims the benefit of priority to U.S. Provisional Patent No. 61/235,491, entitled “Phosphor Coated Lens for Phosphor Converting Type White Light Engine” by Ko et al., filed Aug. 20, 2009. Each of the applications referenced above in this paragraph is hereby fully incorporated by reference herein.
The present disclosure relates generally to optical systems. More particularly, the present disclosure relates to using arrays of optical units to create highly uniform light distributions with selected color and/or color temperature.
Phosphors are isotropic emitters, emitting light in all directions. In traditional LED implementations, phosphor is applied on the LED chip, in a silicone matrix in proximity to the LED or to the outside of an LED dome or other LED packaging. A dome or lens may be applied to an LED chip coated with phosphor to control the light beam angle (shape) from lambertian to a very narrow spot. Such devices range from hemispherical lenses to T-5 mm (T 1¾) aspheres. One conventional system for producing white light LEDs, for example, is constructed with pump blue/UV LED chips and a proximate mixture of phosphor in a binding matrix such as silicone. The term “goop in a cup” is used to describe LEDs with flat or very nearly flat phosphor and silicone mixture over a blue pump within a reflective cup. In remote phosphor systems, phosphor is applied away from the chip on the outside of a dome or inside of a hemispherical shell to increase converting efficiency. However, an additional lens may be needed to control light beam shape. The GE Vio™ employs the remote phosphor solution.
Current systems suffer efficiency losses due to heating of the LED chip and the phosphor particles. Additionally, many current systems require secondary optics or additional lenses to shape the light emitted from a dome or phosphor coated LED into a desired beam angle. The coupling of a lens to a dome causes efficiency losses of approximately 10% or greater. Furthermore, current systems suffer conversion losses when multiple color phosphors are used due to cross-excitation. For instance, a red-emitting phosphor may absorb down-converted light from a green-emitting phosphor instead of the pump wavelength, thereby introducing further losses.
Embodiments described herein provide optical systems that provide illumination patterns having a large area with uniform color. One embodiment of an optical system can include a set of optical units that each produces an illumination pattern with uniform color and intensity. The optical units are spaced so that the individual illumination patterns overlap to create an overall illumination pattern with an overlap area. The color in the overlap area results from blending of the colors emitted by the individual optical units.
The various optical units can be selected to have a high percent of light in beam. By way of example, but not limitation, optical units can be selected to achieve a high percent of light in beam (e.g., greater than 50%, greater than 60%, greater than 70% to greater than 90% and approaching 100%) in a range of beam angles (for example, but not limited to full beam (full width half maximum) angles of 10-120 degrees. Consequently, the overall array can also have a high percent of light in beam.
One embodiment of an optical system comprises an LED array with a set of lenses optically coupled to the LED array. Each lens can be configured to emit a high percent of light in a selected beam angle and the lenses can be spaced so that illumination patterns from adjacent lenses overlap to produce an overall illumination pattern. The overall illumination pattern can have an overlap area having a uniform color profile. The overall illumination pattern may have a non-uniform border area corresponding to the width of a row of lenses.
One embodiment of an optical unit can include an LED, a lens and phosphor disposed on the lens. The phosphors are disposed on the lens between the entrance face to the lens body and the LED so that light emitted from the LED will be incident on the phosphor and at least partially down converted before entering the lens body through the entrance face.
Optical units can be arranged in a packaged array. One embodiment of a packaged array comprises a submount, an array of LEDs mounted to the submount, a housing and a set of lenses. The LED is positioned in an LED cavity and the lens is positioned in a lens cavity so that the lens' entrance face is positioned proximate to an opening between the corresponding lens and LED cavities. A layer of phosphors can be disposed on each site between the entrance face and the corresponding LED so that light is down converted before entering the lens body. In one embodiment, the entrance face of each lens is positioned a distance from the corresponding LED so that there is a gap between the LED and the phosphors.
One advantage provided by embodiments described herein is that phosphor is removed from the LED chip. Heating of the LED chip is therefore reduced or prevented.
As another advantage, phosphor conversion efficiency can be increased due to the separation of phosphor from the LED active layer. Self-heating of phosphor due to the Stokes shift can be suppressed by heat dissipation through the system submount/heatsink.
As yet another advantage, higher phosphor conversion efficiency can be achieved due to the lowered flux density at the entrance of the lens, as compared to the flux density at the LED chip.
As another advantage of various embodiments, positioning phosphor at the entrance surface of a brightness conserving separate optical device can provide an optimal balance between thermal consideration and effective phosphor package efficiencies.
As yet another advantage, light beam pattern control, color mixing and color conversion can be achieved at the same optical device.
Embodiments can provide another advantage by providing a uniform spatial distribution at far field using a brightness conserving lens, making it possible for the underlying optical system to conserve the etendue of the source. Embodiments of described herein provide another advantage by allowing for near and/or far field color and spatial uniformity or for near and/or far field tailored color distribution and spatial distribution.
A more complete understanding of the embodiments and the advantages thereof may be acquired by referring to the following description, taken in conjunction with the accompanying drawings in which like reference numbers indicate like features and wherein:
Embodiments and various features and advantageous details thereof are explained more fully with reference to the exemplary, and therefore non-limiting, examples illustrated in the accompanying drawings and detailed in the following description. Descriptions of known starting materials and processes may be omitted so as not to unnecessarily obscure the disclosure in detail. It should be understood, however, that the detailed description and the specific examples, while indicating the preferred embodiments, are given by way of illustration only and not by way of limitation. Various substitutions, modifications, additions and/or rearrangements within the spirit and/or scope of the underlying inventive concept will become apparent to those skilled in the art from this disclosure.
As used herein, the terms “comprises,” “comprising,” “includes,” “including,” “has,” “having” or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a process, product, article, or apparatus that comprises a list of elements is not necessarily limited only those elements but may include other elements not expressly listed or inherent to such process, product, article, or apparatus. Further, unless expressly stated to the contrary, “or” refers to an inclusive or and not to an exclusive or. For example, a condition A or B is satisfied by any one of the following: A is true (or present) and B is false (or not present), A is false (or not present) and B is true (or present), and both A and B are true (or present).
Additionally, any examples or illustrations given herein are not to be regarded in any way as restrictions on, limits to, or express definitions of, any term or terms with which they are utilized. Instead these examples or illustrations are to be regarded as being described with respect to one particular embodiment and as illustrative only. Those of ordinary skill in the art will appreciate that any term or terms with which these examples or illustrations are utilized encompass other embodiments as well as implementations and adaptations thereof which may or may not be given therewith or elsewhere in the specification and all such embodiments are intended to be included within the scope of that term or terms. Language designating such non-limiting examples and illustrations includes, but is not limited to: “for example,” “for instance,” “e.g.,” “in one embodiment,” and the like.
Reference is now made in detail to the exemplary embodiments of the disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, like numerals will be used throughout the drawings to refer to like and corresponding parts (elements) of the various drawings.
Embodiments described herein provide an optical system that creates highly uniform light distributions with selected color and/or color temperatures. Optical systems can be created using LEDs with lenses, shaped substrate LEDs, or shaped emitter layer LEDs with overlapping illumination patterns. Preferably each lens, shaped substrate or shaped emitter layer in the optical system is configured to conserve radiance and emit light with a high percentage of light in beam. Furthermore, each lens, shaped substrate or shaped emitter layer in an optical system is preferably shaped to create a uniform light distribution pattern.
For purposes of discussion, optical unit 15 can include LED 20 (or an array of LEDs) and lens 25. Light from LED 20 optionally can be down converted by phosphor. If phosphor is used, the phosphor coating may be disposed on lens 25, LED 20 or otherwise disposed between LED 20 and the entrance to the body of lens 25. Lens 25 can be constructed to emit light in a uniform distribution pattern with either a sharp or soft cut off angle, as discussed below, with a high extraction efficiency and percentage of light in beam.
As the distance between the illuminated surface and array 30 grows, the illuminated area grows while the width of the border area 36 stays the same size. At far field, border area 36 becomes unnoticeable. Multiple arrays can be arranged such the border areas overlap to create more uniformity in the border areas, leading to a larger illuminated area having a uniform profile. Due to the square or rectangular shape of the illuminated area created by the array 30, multiple arrays can be spaced at desired distances to provide targeted uniform lighting over large areas.
The color of the overlap area 35 can depend on the color emitted by each lens which, in turn, can depend on the LED and phosphor selected. According to one embodiment, each LED can be a blue or ultraviolet LED used in conjunction with a pure phosphor or blend of phosphors so that the corresponding lens emits a desired color light. In other embodiments, some or all of the LEDs selected may emit a desired color light without using a phosphor coating. Thus, for example, some of the LEDs in the array can be blue or ultraviolet (or other color) LEDs used in conjunction with phosphors while other LEDs can be red (or other color) LEDs used without phosphors. Examples of phosphors that can be used include, but are not limited to: garnets doped with Ce3+ (such as Y3Al5O12: Ce, or YAG), silicates doped with Eu2+ (such as (MgSrBa)2SiO4: Eu, or BOS), nitrides doped with Eu2+ (such as (MgCaSr)AlSiN3: Eu), and other suitable materials known in the art. These phosphors can be used alone (e.g. YAG or BOS), or in blends as necessary to achieve desired color coordinates and/or color rendering index (CRI) values.
One advantage of using an array of units having blue or ultraviolet chips used in conjunction with a pure phosphor or a phosphor blend is that averaging of chromaticity variation between individual units (due to random differences in phosphor loading or chip wavelength) takes place, and the lamp to lamp color variation is thereby reduced versus that for individual LED components. The yield to the ANSI color bins is consequentially increased.
A further advantage of using an array of units having blue or ultraviolet chips used in conjunction with pure phosphors of different colors (in addition to averaging to color coordinates) is the removal of interactions between phosphors. Such interactions are caused by significant overlapping between the emission spectrum of one phosphor and the excitation spectrum of another, and can lead to reduction in CRI value, efficiency, or both. For example, an array consisting of 8 elements coated with YAG and another 8 elements coated with a red nitride phosphor in a checkerboard pattern has a substantially higher CRI value than a similar array using a blend of the same two phosphors on each lens.
Yet another advantage of using an array of units is the ability to provide “hybrid” solutions with narrow beam angles in which some lenses are coated with phosphor and others are not. For example, one embodiment of an array can use blue or ultraviolet LEDs in conjunction with green-yellow phosphor (such as YAG or BOS) on one set of units, and red LEDs, without phosphor, in another set of units. It has been shown that such a hybrid solution can produce a highly efficient warm white light source with a high CRI (e.g., 90 at 3000K).
According to one embodiment, the phosphors can be selected and LEDs controlled so that the combined output in overlap area 35 has a desired spectral power distribution and color coordinates to achieve desired x and y values in the 1931 CIE chromaticity diagram. In particular, the color coordinates of an array can lie on or near the Planckian locus, thereby producing various shades of white light (e.g. “cool” white, “neutral” white, or “warm” white). Desirable regions around the Planckian locus in the chromaticity diagram are defined by the ANSI C78.377-2008 chromaticity standard, over a range of correlated color temperature (CCT) values. However, embodiments described herein may be used to achieve any color coordinates.
By using units emitting various colors (with or without phosphor added), one can achieve dynamic color control of the light (e.g. by using an RGB approach), or a dynamic white light changing from warm to neutral to cool (and back if necessary) over the course of the day, as a few examples. The use of optical units constructed to emit uniform light in a controlled beam angle allows for excellent color mixing (with no diffuser-associated losses) and superior beam angle control at the same time.
Arrays that provide color mixing can be used for industrial, commercial/office, residential, governmental, health care, hospitability or other applications. By way of example, but not limitation, arrays of optical units can be used for the following applications: aquaponic lighting, horticulture lighting, aquaculture lighting, aquarium lighting, food processing lighting, poultry/livestock lighting, automotive lighting, avionics lighting, railway lighting, runway lighting, parking lot lighting, parking garage lighting, street lighting, ship lighting, dock and pier lighting, correctional facility lighting, hazardous location lighting, sports lighting, site lighting, theme park/amusement park lighting, casino lighting, stage/theatrical lighting, museum lighting, emergency lighting, security lighting, vandal proof lighting, landscape lighting, accent lighting, downlights, tail lighting, backlighting, under cabinet lighting, area lighting, billboard lighting, signage lighting, medical/dental lighting, cold storage lighting, architectural façade lighting, fountain lighting, in-grade lighting, retail lighting and other lighting applications. Arrays of optical units can be used in a number of lighting devices including, but not limited to light bulbs, replacement lamps, channel lights, reading lights, flashlights, spot lights, instrumentation lighting, microscope lights, machine vision lights, electronic display lights and other devices.
The following discussion provides various examples of embodiments of optical systems that can be used to provide color mixing. However, other optical systems may also be used.
LED 110 is mounted to a submount 125. Submount 125 can include the electrical substrate and/or any other electrical, thermal or support layers to which the LED is bonded. According to one embodiment, submount 125 that can be made of a material with high thermal conductivity to spread and conduct the heat produced by LED 110. Any suitable submount known or developed in the art can be used. LED 110 is disposed in an LED cavity 130 defined by housing 135. Housing 135 can be a portion of a larger housing, a layer(s) of material mounted on submount 125 or other material positioned around LED 110 that forms a cavity in cooperation with submount 125 or other layer. For example, according to one embodiment, material 135 can be a layer of molded plastic mounted to submount 125.
LED cavity 130, according to one embodiment, can have straight sidewalls that are parallel to the sides of the LED (i.e., vertical from the perspective of
A reflector 140 (see
In some cases, an LED may only leak light out the sides of some portions of the LED. In the embodiment of
Lens 105 can include an entrance face 150 to receive light into the lens body 107 of lens 105. According to one embodiment, entrance face 150 can be parallel to the primary emitting plane of LED 110 (e.g., a plane parallel to face 117 in
A phosphor layer 145 can be disposed on lens 105 between the entrance face of lens body 107 and LED 110. The phosphor layer can be disposed directly on the entrance face 150 or on a buffer layer between phosphor layer 145 and entrance face 150. The phosphor in phosphor layer 145 absorbs the higher energy, short wavelength light waves, and re-emits lower energy, longer wavelength light. Light emitted by phosphor layer 145 can enter the lens body 107 through entrance face 150.
According to one embodiment, phosphor layer 145 can include a layer of phosphor particles in a binding material, such as silicone, coated on the entrance face 150 of lens body 107. The phosphor particles can include any suitably sized phosphor particles including, but not limited to, nano-phosphor particles, quantum dots, or smaller or larger particles and can include a single color or multiple colors of phosphor particles. In other embodiments, the phosphor layer 145 can be separated from the entrance face 150 of lens body 107 by one or more buffer layers. There may also be additional layers of material such that, for example, phosphor layer 145 is sandwiched between entrance face 150 and one or more additional layers of material. Materials and adhesives can be selected with indexes of refraction such that losses do not occur or are minimized at layer boundaries. The phosphor can be disposed using any technique known or developed in the art including, but not limited to, silk screening, stencil printing pad printing, syringe dispense or jetting.
The color of light emitted by a unit 100 can be selected based on LED 110 and the phosphor particles in phosphor layer 145. For example, LED 110 can be a UV LED and phosphor layer 145 can include phosphors that down convert UV light to red, green, blue, yellow or other color light. In another example, LED 110 can be a blue LED and phosphor layer 145 can down convert the blue light into a desired color. Reflector 140 can be selected to reflect both the color light emitted by the LED 110 and the down converted light from phosphor layer 145.
Lens 105 is positioned so that phosphor layer 145 is maintained a distance from LED 110. The position of lens 105 can be maintained by using a housing, coupling lens 105 to encapsulant in LED cavity 130 or otherwise positioning lens 105 relative LED 110. If lens 105 is adhered to an encapsulant, an adhesive with an index of refraction equal to or greater than that of the encapsulant can be used to prevent TIR at the encapsulant/adhesive boundary.
Lens 105 can act as a light guide to guide light from entrance face 150 to exit face 155. Examples of a lens 105 that can utilize TIR at shaped sidewalls 157 to guide light to exit face 155 are described below and in U.S. Pat. No. 7,772,604 which is hereby fully incorporated by reference herein. Lens 105 can be a separate optical device designed so that all the light can be extracted out exit face 155 (not accounting for Fresnel losses) in the smallest package design possible through selection of exit face area 155, distance between the exit face 155 and entrance face 150 and the design of sidewalls 157. Other embodiments can be shaped to have different sizes or achieve different extraction efficiencies. For example, according to one embodiment, lens 105 can be configured such that at least 70% of the light entering lens body 107 at entrance 150 exits exit face 155. Additionally, the lens 105 can be selected to provide a uniform light distribution and to emit light in a desired half-angle.
In operation, LED 110 produces light that can exit LED 110 from surface 117 (see
One consideration is that phosphor can heat up to a temperature of approximately 150 degrees Celsius during use. Consequently, lens body 107 can be constructed of a material that can withstand continuous use at this temperature. In another embodiment, a buffer layer of silicon or other material capable of withstanding high temperatures can be introduced between the phosphor layer 145 and entrance face 150 of lens 105. While thicker or thinner buffers can be used, one embodiment can include a layer of silicon that is 100 to 200 microns thick. This can allow, for example, a broader range of polycarbonates to be used for lens body 107.
Embodiments described herein provide an advantage over traditional systems of using phosphors with LEDs because the phosphor is removed a distance from the LED. Because the phosphor is located at the entrance of the lens, there is high coupling efficiency. Additionally, self-heating of the phosphor due to Stokes shift can be reduced because heat can be dissipated through the material of lens 140, housing 135 and/or submount 125. Higher phosphor conversion efficiency can also be achieved due to low flux density at the entrance face 150 of lens 105.
The distance between phosphor 145 and LED 110 can be optimized to provide an optimal balance between thermal considerations and effective phosphor package efficiencies. While any suitable gap size can be used as needed or desired, one embodiment of an optical system has a gap of 100-200 microns between surface 117 (see
Additionally, embodiments described herein provide for flexible optical system architectures. Because the phosphor coated lens can be separate from the LED chip, it can be used in conjunction with various types of optical devices, including conventional light emitting devices. Furthermore, LEDs 110 can be used with a variety of different lens types depending on need.
According to one embodiment, an array of lenses 105 can be formed where each lens 105 is selected to emit light in a desired half-angle having a uniform distribution in near and far fields. The lenses 105 can be tightly packed, that is spaced so that there are no perceivable gaps between emitted light for adjacent lenses 105. Because the emitted light from each lens 105 is uniform and in a desired half-angle, the light output of the array will be in the desired half-angle with uniform near and far field distributions, but covering a larger area than the light emitted by a single lens with no dark spots or ghosting. This provides a very practical benefit for display or lighting manufacturers because additional optics are no longer required to get light from an LED array using phosphors into a desired angle.
Main housing 205 can be formed of suitable materials including, but not limited to, plastic, thermoplastic, and other types of polymeric materials. Composite materials or other engineered materials may also be used. In some embodiments, main housing 205 may be made by a plastic injection molding manufacturing process. Various molding processes and other types of manufacturing processes may also be used. In some embodiments, main housing 205 may be opaque. In some embodiments, main housing 205 may be transparent or semi-transparent. Main housing 205 can be bonded or otherwise coupled to a layer of material 215 to complete the housing about the LEDs and lenses. In other embodiments, the housing can be formed of any number of layers or pieces of suitable material that will not unacceptably deform during operation due to heating and can protect the LEDs and lens for expected contact or shock during use, transportation or manufacture.
In the embodiment of
Cover 210 can be an optically transparent material, such as a plastic, glass, composite material, or other material and may include one or more layers. Additionally, cover 210 may include layers of material to perform photon conversion (e.g., an additional phosphor layer), filtering or other functions with respect to light exiting lens 105.
Main housing 205 forms a lens cavity 220 sized to fit lens 105. The sidewalls 225 of lens cavity 220 can be curved to match or approximate the sidewall shapes of lens 105 so that the size of lens cavity 220 is smaller proximate to the corresponding LED cavity 130 and larger distal from LED cavity 130. In other embodiments, the sidewalls 225 can be vertically straight (from the perspective of
According to one embodiment, lens cavity 220 can be sized so that there is a gap between the sidewalls of lens body 107 and sidewalls 225 of lens cavity 220 to preserve TIR in lens body 107. The size of the gap can be constant or can increase or decrease further from the base of lens cavity 220. The gap can be filled with air or other material. Preferably, the material has the same or lower index of refraction than body 107 of lens 105. In other embodiments, sidewalls 225 can contact sidewalls of lens body 107 and act as a reflector for light in lens body 107.
Main housing 205 can include a shoulder 230 on which ledge 235 of cover 210 rests. An adhesive, mechanical fasteners or other suitable fastening mechanism can be used to couple cover 210 to main housing 205. In other embodiments a secondary structure, such as a clamping structure, can maintain cover 210 against main housing 205.
According to one embodiment, by coupling cover 210 to main housing 205, lens 105 is held in a desired position in lens cavity 220. In this case, lens 105 may not require additional attachment to housing 205. In other embodiments, a portion of lens 105 can be adhered to or otherwise coupled to a shoulder 240 at the base of lens cavity 220 or other portion(s) of lens 105 can be coupled to main housing 205.
Main housing 205 defines a portion or all of LED cavity 130 in cooperation with submount 125 and housing layer 215. Although LED cavity 130 is shown with vertical sidewalls, LED cavity 130 can have tapered, curved or otherwise shaped sidewalls to act as a redirector lens. The opening to LED cavity 130 can have the same shape as and be rotationally aligned with LED 110 or can have another shape or alignment.
A phosphor layer can be disposed proximate to entrance face 150 such that light exiting LED cavity 130 will be incident on the phosphor layer. The phosphor layer down converts light before the light enters lens body 107. The down converted light is guided through lens 105 and exits cover 210. Entrance face 150 of lens body 107 can be the same shape as and be rotationally aligned with the opening to LED cavity 130 or have another shape or alignment.
In the embodiment of
A portion of the cavity that houses LED 110 can be formed by layer 255 rather than the main housing 205. In this case, housing layers 255 and 215 can define the lens cavities 130, while layers 215 and 255 define the LED cavities. Layers 215 and 255 can include any suitable materials including plastics or other materials. Layer 255 can be inset from layer 215 to form a ledge to which main housing 205 can be bonded. The use of layers 215 and 255 can ease manufacturability by providing a mechanism by which to align main housing 205.
Each lens 105 can be a phosphor coated lens selected to emit a desired color light. If more than one phosphor lens is used in a system, multiple types of phosphors may be used to achieve the desired color temperature and CRI. For instance, three yellow phosphor lenses and one red phosphor lens may be used in conjunction with a blue pump to attain warm white light. As another example, in the 2×2 array of lenses shown, each lens can emit red, green or blue light. The light from lenses 105 can be combined to form white light. Since each of the four phosphor lens can emit to the same far field distribution, the colors will undergo superposition and will not bleed or create ring-like effects.
In yet another embodiment, each assembly 275 can emit a different color of light. In a 4×4 array as shown in
According to one embodiment, lighting systems can be created with multiple packaged arrays.
In the various embodiments described above, lens 105 can have a lens body 107 with an entrance face 150, an exit face 155 and sidewalls 157 (see
Where Ω1=effective solid angle whereby light enters through entrance face 150; Ω2=effective solid angle whereby light leaves exit face 155; A1=area of entrance face 150; A2=area of exit face 155; n1=refractive index of material of lens body 107; and n2=refractive index of substance external to the exit face 155 of lens body 107 (e.g. air or other medium). In another embodiment, it can be assumed that A1 is the size of the phosphor layer and that the phosphor layer acts as a uniform emitter over that area.
There are various models for determining effective solid angle including those described in U.S. patent application Ser. No. 11/906,194 entitled “LED System and Method” to Duong, et al. filed Oct. 1, 2007, issued as U.S. Pat. No. 7,789,531 on Sep. 7, 2010, U.S. patent application Ser. No. 11/906,219 entitled “LED System and Method” to Duong, et al., filed Oct. 1, 2007, issued as U.S. Pat. No. 8,087,960 on Jan. 31, 2012, and U.S. patent application Ser. No. 11/649,018 entitled “Separate Optical Device for Directing Light from an LED,” filed Jan. 3, 2007, issued as U.S. Pat. No. 7,772,604 on Aug. 10, 2010, each of which is hereby fully incorporated by reference herein. Preferably, the area of exit face 155 is within 30% (plus or minus) of the minimum area necessary to conserve radiance.
The distance between exit face 155 and entrance face 150 can be selected so that all rays having a straight transmission path from entrance face 150 to exit face 155 are incident on exit face 155 at less than or equal to the critical angle at exit face 155 to prevent TIR at exit face 155. According to one embodiment, the minimum distance can be selected based on a limiting ray. The limiting ray is a ray that travels the longest straight line distance from entrance face 150 to exit face 155. For square or rectangular faces 150 and 155, the limiting ray will be a ray that travels from a corner of entrance face 150 to the opposite corner of exit face 155. Preferably, the distance between the entrance face 155 and exit face 155 is within 30% (plus or minus) of this minimum distance, though smaller distances can be used.
In addition, the sidewalls 157 can be shaped. Broadly speaking, the sidewall shapes are determined so that any ray incident on a sidewall is reflected to exit face 155 and is incident on exit face 155 at the critical angle or less (i.e., so that there is no loss due to internal reflection at exit face 155). While, in one embodiment, the sidewalls are shaped so that all rays that encounter the inner surface of the sidewalls experience total internal reflection to exit face 155 and are incident on exit face 155 at the critical angle or less, other sidewall shapes that allow some loss can be used.
According to one embodiment, each sidewall can be divided into n facets with each facet being a planar section. For example, model sidewall 370 is made of fifteen planar facets 372a-372o rather than a continuous curve. The variables of each facet can be iteratively adjusted and the resulting distribution profiles analyzed until a satisfactory profile is achieved as described below. While the example of fifteen facets is used, each sidewall can be divided into any number of facets, including twenty or more facets.
Each facet can be analyzed with respect to reflecting a certain subset of rays within a lens. This area of interest can be defined as an “angular subtense.” The angular subtense for a facet may be defined in terms of the angles of rays emanating from a predefined point. Preferably, the point selected is one that will give rays with the highest angles of incidence on the facet because such rays are the least likely to experience TIR at the facet. In a lens with a square shaped entrance area, for example, this will be a point on the opposite edge of the entrance.
According to one embodiment, for a selected A1, A2, and height, the maximum of angle 374 of any ray that will be incident on a given sidewall (e.g., sidewall 370) without being previously reflected by another sidewall can be determined. In this example, ray 376 emanating from point 378 establishes the maximum angle 374 for sidewall 370. If the maximum of angle 374 is 48 degrees and there are 15 facets for sidewall 370, each facet (assuming an even distribution of angular subtenses) will correspond to a 3.2 degree band of angle 374 (e.g., a first facet will be the area on which rays emanating from point 378 with an angle 17 of 0-3.2 degrees are incident, the second facet will be the area on which rays emanating 374 from point 378 with an angle 95 of 3.2-6.4 degrees are incident, and so on).
For each facet, the exit angle, facet size, tilt angle, or other parameter of the facet can be set so that all rays incident on the facet experience TIR and are reflected to exit surface 355 such that they are incident on exit surface 355 with an angle of incidence of less than or equal to the critical angle. Preferably, the sidewalls are also shaped so that a ray viewed in a cross-sectional view only hits a side wall once. However, there may be additional reflection from a sidewall out of plane of the section. For a full 3D analysis, a ray that strikes a first sidewall near a corner, may then bounce over to a second side wall, adjacent to the first, and from there to the exit face. A curve fit or other numerical analysis may be performed to create a curved sidewall shape that best fits the desired facets.
To optimize the variables for each facet, a simulated detector plane 380 can be established. Detector plane 380 can include x number of detectors to independently record incident power. A simulation of light passing through the lens 305 may be performed and the intensity and irradiance distributions as received by detector plane 380 analyzed. If the intensity and irradiance distributions are not satisfactory for a particular application, the angles and angular subtenses of the facets can be adjusted, a new curved surface generated and the simulation re-performed until a satisfactory intensity profile, exitance profile or other light output profile is reached. Additional detector planes can be analyzed to ensure that both near field and far field patterns are satisfactory. Alternatively, the simulation(s) can be performed using the facets rather than curved surfaces and the surface curves determined after a desired light output profile is reached. In yet another embodiment, the sidewalls can remain faceted and no curve be generated.
According to another embodiment, the sidewall shape can be selected based on multiple parabolas with each planer facet representing a linear approximation of a portion of a parabola. For example,
In one embodiment, when fabricating a sidewall or calculating the angular subtense of a sidewall, finer subtenses may be used towards the base of the sidewall (i.e. nearer the phosphor layer) because the effects of the subtense are greater or more acute upon reflection near the base, and thus finer subtenses allow for a sidewall with better TIR properties, whereas further from the base, where the effects of the subtenses are less, the subtenses may be coarser. Thus, facets of a sidewall may be numerically greater towards the base of a lens body 107. In one embodiment, a sidewall may have 110 or more facets, with finer facets at the base of the sidewall, wherein the facets approximate one or more subtenses.
A facet can be a linear approximation of a portion of a parabola 388. The parameters of parabola 388 can be adjusted until the portion achieves the desired goal of all rays incident on the portion reflecting to exit face 355 such that the rays have an exit angle 390 of less than the critical angle. Each facet can be formed from a parabola having different parameters. Thus, a facet for one angular subtense may be based on a parabola while another facet is based on another parabola. A 110-facet sidewall, for example, may be based on 110 different parabolas.
For example, a user can specify the size of the entrance face of the shaped device (in this case marked LED size) and material index. The size can correspond to the size of the entrance face or emitting size of the phosphor layer. Using a hypothetical example of a size of 1, and an index of refraction of 1.77, a row in screen 500 can be completed as follows. The user can specify an exit angle in air (assuming air is the medium in which the lens will operate) in column 550. In the example of the first row, the user has selected 55.3792 degrees. The exit angle in the lens can be calculated as sin(55.3792/180*π)1.77 or 0.4649323 radians, column 540a. Column 540b can be calculated as a sin(0.4649323)/π*180=27.2058407. The focus of the parabola can be calculated as ½*(1+cos(π/2−27.2058407/180*π)=0.732466. Angular subtense column 565 can be calculated based on the number in the next column (representing the relative size of a particular facet) as (90−27.7058047)/110=3.114708. Theta column 570 can be calculated using a selected number of facets (in this example 110). For example, in the first row theta is calculated as (90 27.7058407)+3.114708*110=124.5883. The radius of the parabola (column 575) for the first facet can be calculated as 2*0.732466/(1+cos(124.5883/180*π)). The contents of coordinate transformation columns 577 can be calculated as follows for the first row: x=−3.3885*cos(124.5883/180*π)=1.923573; y=−3.3885*sin(124.5883/180*π)=2.789594, X=1.923573*cos(27.7058407/180*π)+2.789594*sin(27.7058407/180*π); Y=2.789594*cos(27.7058407/180*π)−1.923573*sin(27.7058407/180*π)−1(size)/2=1.075452 and Y′=−Y. The X, Y coordinates can then be used as data point inputs for a shape fitting chart in Excel. For example graph 510 is based on the data points in the X and Y columns (with the Y column values used as x-axis coordinates and the X column values used as y-axis coordinates in graph 510). In addition to the X and Y values a starting value can be set (e.g., 0.5 and 0). The shape from graph 510 can be entered into an optical design package and simulations run. If a simulation is unsatisfactory, the user can adjust the values until a satisfactory profile is achieved.
When a satisfactory efficiency and intensity profile are achieved, a separate optical device can be formed having the specified parameters. An example of such a lens body 107 is shown in
In the above example, it is assumed that the exit plane of light for purposes of shaping a lens is the exit face of the lens. However, as shown in the embodiment of
The various boundary conditions, particularly the area of exit surface 155, can be determined for the separate optical device so that brightness can be conserved. The minimum area of exit surface 155 can be determined from EQN. 1 above, which relies on various effective solid angles. Typically, the effective solid angle of light is determined based on equations derived from sources that radiate as Lambertian emitters, but that are treated as points because the distances of interest are much greater than the size of the source. The observed Radiant Intensity (flux/steradian) of a Lambertian source varies with the angle to the normal of the source by the cosine of that angle. This occurs because although the radiance (flux/steradian/m2) remains the same in all directions, the effective area of the source decreases to zero as the observed angle increases to 90 degrees. Integration of this effect over a full hemisphere results in a projected solid angle value equal to π steradians.
Turning to
Rc=R*Sin(θ) [EQN. 2]
The area equals:
A3=πRc2=π(R*Sin(θ))2 [EQN. 3A]
The area A3 is the projected area of the solid angle as it intersects the sphere. The area A3 is divided by the projected area of the hemisphere (Ah=πR2) and the quotient is multiplied by the projected solid angle of the full hemisphere (equal to π) to obtain the projected solid angle Ω, such that:
For entrance face 150 of
In the above example, the solid angle is determined using equations derived from a Lambertian source modeled as a point source. These equations do not consider the fact that light may enter a lens body 107 through an interface that may be square, rectangular, circular, oval or otherwise shaped. While the above-described method can give a good estimate of the solid angle, which can be later adjusted if necessary based on empirical or computer simulation testing, other methods of determining the effective solid angle can be used.
n2 Sin(α1)=n1 Sin(β1) [EQN. 5]
where n1 is the IOR of the lens 760;
For example, if the desired half-angle α1 is 30 degrees, and a lens having an IOR of 1.5 is projecting into air having an IOR of 1, then β1=19.47 degrees. A similar calculation can be performed for a ray projecting from a point on the long and short sides of entrance surface 150. For example, as shown in
Using the angles calculated, the location of an effective point source 757 can be determined. For a square entrance face 450, of length l1, the effective point source will be located X=0, Y=0 and
Where Zeps is the distance the effective point source is displaced from the emitting surface of the LED.
The X, Y and Z distances from the effective point source 757 to points F1 and F2 can be calculated assuming F1 intersects a sphere of unity radius according to:
XF1=cos(ψ1)sin(β1) [EQN. 7]
YF1=sin(ψ1)sin(β1) [EQN. 8]
ZF1=cos(β1) [EQN. 9]
XF2=cos(ψ2) [EQN. 10]
YF2=sin(β2) [EQN. 11]
ZF2=cos(β2) [EQN. 12]
where ψ1 is the angle of the diagonal ray in the X-Y plane (45 degrees for a square) and where ψ2=90 degrees for a ray projecting from the middle of a side parallel to the X axis as shown in
As one illustrative example, using the above method for a half-angle of 30 degrees with a square LED and output face yields an effective solid angle of 0.552 steradians to the target in air. By contrast, the use of the traditional circular projected area with a 30 degree half angle would yield an effective solid angle of 0.785 steradians. When these values are then used in EQUATION 1, for given IORs and flux, the traditional (circular) calculation yields a required exit area that is undersized by about 30%. If one were to design a system using this approach, the applicable physics (conservation of radiance) would reduce the light output by 30% over the optimum design. Conversely, using the corrected effective solid angle described above calculates an exit face area that will produce 42% more light output than is achievable with the circular calculation.
Although particular methods of determining the effective solid angle for a separate optical device are described above, any method known or developed in the art can be used. Alternatively, the minimum surface area to conserve brightness can be determined empirically. Moreover, while the minimum surface area calculations above assume 100% of the emitting entrance face of the separate optical device is receiving light, the phosphor layer may be disposed over only a part of the entrance surface such that a smaller entrance surface area is used. The calculations of the minimum area of the exit plane can be adjusted to account of the actual area receiving light. That is, the actual area of the phosphor layer can used as A1.
The lens body 107 can be optimized for use with a phosphor layer 145 as a uniform emitter at the entrance face using modeling as described above. Lenses according to embodiments described herein can project light into a desired cone angle of 10-60 degrees with a theoretical efficiency of up to 96% in the lens body (meaning that 96% of the light received from the phosphors is emitted in the desired half-angles with 4% Fresnel loss). The efficiency can be 100% without Fresnel losses.
Embodiments of lenses can be shaped to achieve optimal efficiency in a small package size. In other embodiments, lenses can be shaped to achieve lower efficiencies, while still offering advantages over traditional systems. For example, in one embodiment, a lens can be shaped with an exit face that is at least 70% of the size necessary to conserve radiance for light entering the entrance face for a selected half angle of light emitted from the exit plane. The sidewalls can have a shape so that at least a majority of the light having a straight transmission path from the entrance face to the exit plane are incident on the exit plane at less than or equal to the critical angle. Even at only 60% or 70% efficiency, such an embodiment provides greater efficiency than many other technologies, while also producing uniform or near uniform intensity distributions (or other controlled distribution) at both near and far fields.
Lenses 105 can be constructed to emit light in a uniform distribution pattern with either a sharp or soft cut off (i.e., transition). Using an example of a lens emitting light with a 30 degree half angle, in one embodiment the lens can be shaped so that the uniform light profile extends through the entire 30 degrees and cuts off sharply. In another embodiment, lens can be shaped to produce a profile that is uniform in the 105 degree half angle but tapers off between 105 and 30 degrees. In one such embodiment, the size of the exit face can be selected to conserve radiance for the 30 degree half angle and the sidewalls shaped to create a uniform distribution profile in the 105 degree half angle. In some cases the height of lens 105 can be made shorter to allow some light to escape the sidewalls into the 30 degree half angle. By way of example, but not limitation, the lens geometries can be selected to emit 90% of the light in a uniform profile in the 30 degree half angle and emit the other 10% in the remaining area. Lenses that produce a light profile having softer edges rather than a sharp cut off can be manufactured with a height that is 30% of the minimum height discussed above and still achieve greater than 70% extraction efficiencies.
Lenses 105 can also be shaped to project a percentage of light into a selected beam angle while allowing other light to escape the sidewalls or fall outside of the selected angle. For example, lenses can be constructed such that greater than 50%, greater than 60%, greater than 70% to greater than 90% and approaching 100% of the light emitted by the lens falls within the full beam angle.
While the above embodiments discuss lenses that are separated from the LED by a gap, lenses can also be coupled to the LED without a gap.
Lens 105 can be coupled to LED 110 using a friction fit, optical cement or other coupling mechanism, whether mechanical, chemical, or other. Preferably, in the embodiment of
While a lens 105 that emits light in a uniform distribution in a desired half angle provides advantages for light blending, other embodiments of lenses can be used with phosphors.
One of ordinary skill in the art would understand that phosphor can be disposed on a lens in a variety of manners. As discussed in conjunction with several embodiments above, phosphor can be applied as a coating to an entrance face or buffer layer.
While this disclosure describes particular embodiments, it should be understood that the embodiments are illustrative and that the scope of the invention is not limited to these embodiments. Many variations, modifications, additions and improvements to the embodiments described above are possible. For example, the various ranges and dimensions provided are provided by way of example and LEDs and lenses may be operable within other ranges using other dimensions. It is contemplated that these variations, modifications, additions and improvements fall within the scope of the claims.
Winberg, Paul N., Duong, Dung T., Johnson, Randall E., Radkov, Emil, Ko, Hyunchul
Patent | Priority | Assignee | Title |
10193018, | Dec 29 2016 | Intel Corporation | Compact low power head-mounted display with light emitting diodes that exhibit a desired beam angle |
10527234, | Jan 11 2017 | SIGNIFY HOLDING B V | Lighting system incorporating chip scale package light emitting diodes |
9331255, | Dec 16 2009 | OSRAM Opto Semiconductors GmbH | Housing that includes reflector part and housing material formed with plastic material |
9574743, | Jan 05 2006 | Illumitex, Inc. | Separate optical device for directing light from an LED |
Patent | Priority | Assignee | Title |
1670837, | |||
3981023, | Sep 16 1974 | Northern Electric Company Limited | Integral lens light emitting diode |
3988633, | Jan 30 1975 | DURO-TEST CORPORATION, INC | Fluorescent lamp with envelope grooves |
4125890, | Dec 10 1976 | Corning Glass Works | Parabolic reflector including filament locating means |
4180755, | Dec 10 1976 | Corning Glass Works | Sealed beam lamp including filament locating means |
4239369, | Nov 20 1978 | GTE Products Corporation | Camera and reflector having offset optical and mechanical axes |
4304479, | Jul 28 1980 | Polaroid Corporation | Photographic lighting apparatus |
4388633, | Sep 29 1980 | Hughes Electronics Corporation | Monolithic transistor coupled electroluminescent diode |
4439910, | Sep 29 1980 | Hughes Electronics Corporation | Process for fabrication of monolithic transistor coupled electroluminescent diode |
4486364, | Dec 04 1981 | Stanley Electric Company, Ltd. | Method and apparatus for molding a synthetic resin lens for a light emitting diode |
4501637, | Jun 12 1981 | Motorola, Inc. | LED having self-aligned lens |
4716507, | May 12 1986 | The United States of America as represented by the Secretary of the Army | Optical collimator target illumination |
4728999, | Jun 25 1980 | Pitney Bowes Inc. | Light emitting diode assembly |
4740259, | Sep 13 1985 | Siemens Aktiengesellschaft | Method of making a light-emitting-diode (led) with spherical lens |
4799136, | May 29 1987 | JJI LIGHTING GROUP, INC | Lighting fixture having concave shaped reflector and improved asymmetric light reflection system |
4841344, | Sep 13 1985 | Siemens Atiengesellschaft | Light-emitting-diode (LED) with spherical lens |
4966862, | Aug 28 1989 | Cree, Inc | Method of production of light emitting diodes |
5036339, | Sep 05 1989 | Eastman Kodak Company | LED array into floating focusing structure for differential expansion |
5087949, | Jun 27 1989 | Philips Lumileds Lighting Company LLC | Light-emitting diode with diagonal faces |
5114513, | Oct 27 1988 | OMRON TATEISI ELECTRONICS CO | Optical device and manufacturing method thereof |
5126929, | Jan 09 1991 | R & D Molded Products, Inc.; R & D MOLDED PRODUCTS, INC , A CORP OF CA | LED holder with lens |
5151718, | Dec 31 1990 | Texas Instruments Incorporated; TEXAS INSTRUMENTS INCORPORATED, A CORP OF DE | System and method for solid state illumination for DMD devices |
5174649, | Jul 17 1991 | MANUFACTURERS & TRADERS TRUST COMPANY | LED lamp including refractive lens element |
5218216, | Jan 31 1987 | Toyoda Gosei Co., Ltd.; NAGOYA UNIVERSITY | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same |
5233204, | Jan 10 1992 | Philips Lumileds Lighting Company LLC | Light-emitting diode with a thick transparent layer |
5251117, | Feb 21 1991 | NEC Corporation | Structure of a diffusing lens for a light emitting diode |
5272108, | Feb 27 1991 | Kabushiki Kaisha Toyota Chuo Kenkyusho; Toyoda Gosei Co., Ltd. | Method of manufacturing gallium nitride semiconductor light-emitting device |
5278433, | Feb 28 1990 | TOYODA GOSEI CO , LTD | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
5281830, | Oct 27 1990 | Toyoda Gosei Co., Ltd.; NAGOYA UNIVERSITY; Research Development Corporation of Japan | Light-emitting semiconductor device using gallium nitride group compound |
5315490, | Oct 13 1989 | Light fittings | |
5369289, | Oct 30 1991 | TOYODA GOSEI CO , LTD ; Kabushiki Kaisha Toyota Chuo Kenkyusho | Gallium nitride-based compound semiconductor light-emitting device and method for making the same |
5523591, | Jan 25 1995 | Eastman Kodak Company | Assembly of led array and lens with engineered light output profile and method for making the assembly |
5528720, | Mar 23 1992 | 3M Innovative Properties Company | Tapered multilayer luminaire devices |
5563422, | Apr 28 1993 | Nichia Corporation | Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
5578156, | Jan 07 1994 | Sumitomo Electric Industries, Ltd. | Method of mounting a lens on a light emitting diode |
5587593, | Apr 20 1994 | TOYODA GOSEI CO , LTD ; Research Development Corporation of Japan | Light-emitting semiconductor device using group III nitrogen compound |
5620557, | Jun 26 1995 | TOYODA GOSEI CO , LTD ; AKASAKI, ISAMU; AMANO, HIROSHI | Sapphireless group III nitride semiconductor and method for making same |
5652438, | Jul 20 1994 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
5654831, | Jan 04 1995 | HE HOLDINGS, INC , A DELAWARE CORP ; Raytheon Company | Refractive ellipsoid optical surface without spherical aberration |
5667297, | Aug 29 1994 | U.S. Philips Corporation | Electric reflector lamp |
5700713, | Mar 22 1994 | Toyoda Gosei Co., Ltd. | Light emitting semiconductor device using group III nitride compound and method of producing the same |
5739554, | May 08 1995 | Cree, Inc | Double heterojunction light emitting diode with gallium nitride active layer |
5780867, | Mar 07 1996 | Sandia Corporation | Broadband light-emitting diode |
5813753, | May 27 1997 | Philips Electronics North America Corp | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
5839424, | Apr 16 1996 | Applied Materials Switzerland SA | Process for the orientation of several single crystals disposed side by side on a cutting support for their simultaneous cutting in a cutting machine and device for practicing this process |
5846844, | Nov 29 1993 | Toyoda Gosei Co., Ltd.; Isamu Akasaki; Hiroshi Amano; Kazumasa Hiramatsu | Method for producing group III nitride compound semiconductor substrates using ZnO release layers |
5862167, | Jul 19 1994 | Toyoda Gosei Co., Ltd.; Research Development Corporation of Japan; Isamu, Akasaki; Hiroshi, Amano | Light-emitting semiconductor device using gallium nitride compound |
5912477, | Oct 07 1994 | Cree, Inc | High efficiency light emitting diodes |
5945689, | Mar 17 1995 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
5953469, | Oct 29 1996 | Life Technologies Corporation | Optical device utilizing optical waveguides and mechanical light-switches |
5959401, | May 21 1996 | TOYODA GOSEI CO , LTD | Light-emitting semiconductor device using group III nitride compound |
5998925, | Jul 29 1996 | Nichia Corporation | Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material |
6005722, | Sep 04 1998 | Hewlett-Packard Company | Optical display system including a light valve |
6008539, | Jun 16 1995 | TOYODA GOSEI CO , LTD | Electrodes for p-type group III nitride compound semiconductors |
6023076, | Aug 22 1996 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light emitting device having a current path between electrodes |
6066861, | May 20 1998 | Osram GmbH | Wavelength-converting casting composition and its use |
6078064, | May 04 1998 | Epistar Co. | Indium gallium nitride light emitting diode |
6093941, | Sep 09 1993 | UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE SECRETARY OF THE NAVY CHIEF OF NAVAL RESEARCH, OFFICE OF COUNSEL | Photonic silicon on a transparent substrate |
6118908, | Sep 09 1994 | Gemfire Corporation | Integrated optical device with phosphor in substrate pit |
6133589, | Jun 08 1999 | Lumileds LLC | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
6144536, | Feb 13 1997 | Honeywell International Inc. | Illumination system with light recycling to enhance brightness |
6169294, | Sep 08 1998 | Epistar Co. | Inverted light emitting diode |
6177761, | Jul 17 1996 | SEOUL SEMICONDUCTOR COMPANY, LTD | LED with light extractor |
6185051, | Jun 23 1999 | Western Digital Technologies, INC | High numerical aperture optical focusing device for use in data storage systems |
6194742, | Jun 05 1998 | Lumileds LLC | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
6201262, | Oct 07 1997 | Cree, Inc | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
6221683, | May 27 1997 | OSRAM OPTO SEMICONDUCTOR GMBH & CO OHG | Method for producing a light-emitting component |
6222207, | May 24 1999 | Lumileds LLC | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
6229160, | Jun 03 1997 | Lumileds LLC | Light extraction from a semiconductor light-emitting device via chip shaping |
6229782, | Jul 06 1998 | Western Digital Technologies, INC | High numerical aperture optical focusing device for use in data storage systems |
6257737, | May 20 1999 | PHILIPS ELECTRONICS N0RTH AMERICA CORP | Low-profile luminaire having a reflector for mixing light from a multi-color linear array of LEDs |
6258618, | Sep 11 1998 | Lumileds LLC | Light emitting device having a finely-patterned reflective contact |
6271622, | Apr 28 1997 | OSRAM SYLVANIA Inc | Vehicle lamps with improved filament and filament support configurations |
6274924, | Nov 05 1998 | Lumileds LLC | Surface mountable LED package |
6287947, | Jun 08 1999 | Lumileds LLC | Method of forming transparent contacts to a p-type GaN layer |
6307218, | Nov 20 1998 | Lumileds LLC | Electrode structures for light emitting devices |
6310364, | Aug 03 1998 | TOYODA GOSEI CO , LTD | Light-emitting apparatus |
6323063, | Jun 03 1997 | Philips Lumileds Lighting Company LLC | Forming LED having angled sides for increased side light extraction |
6331450, | Dec 22 1998 | TOYODA GOSEI CO , LTD | Method of manufacturing semiconductor device using group III nitride compound |
6335999, | Mar 23 1992 | 3M Innovative Properties Company | Multilayer luminaire device |
6337493, | Apr 21 1999 | Nichia Corporation | Nitride semiconductor device |
6350041, | Dec 03 1999 | Cree, Inc | High output radial dispersing lamp using a solid state light source |
6351069, | Feb 18 1999 | Lumileds LLC | Red-deficiency-compensating phosphor LED |
6356700, | Jun 08 1998 | Efficient light engine systems, components and methods of manufacture | |
6361192, | Oct 25 1999 | BARR-ONE, LLC | Lens system for enhancing LED light output |
6364487, | Jan 29 1999 | AVAGO TECHNOLOGIES ECBU IP SINGAPORE PTE LTD | Solid state based illumination source for a projection display |
6377535, | Jul 06 1998 | Western Digital Technologies, INC | High numerical aperture optical focusing device having a conical incident facet and a parabolic reflector for use in data storage systems |
6410942, | Dec 03 1999 | Cree, Inc | Enhanced light extraction through the use of micro-LED arrays |
6417019, | Apr 04 2001 | Lumileds LLC | Phosphor converted light emitting diode |
6443594, | Mar 31 2000 | SIGNIFY HOLDING B V | One-piece lens arrays for collimating and focusing light and led light generators using same |
6445011, | Jan 29 1999 | TOYODA GOSEI CO , LTD ; KOHA CO , LTD | Light-emitting diode |
6452214, | Mar 31 1999 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting device having a light emission output of high light intensity |
6459100, | Sep 16 1998 | Cree, Inc | Vertical geometry ingan LED |
6478453, | Jan 07 2000 | SIGNIFY HOLDING B V | Luminaire |
6486499, | Dec 22 1999 | Lumileds LLC | III-nitride light-emitting device with increased light generating capability |
6489636, | Mar 29 2001 | Lumileds LLC | Indium gallium nitride smoothing structures for III-nitride devices |
6501102, | Sep 27 1999 | LumiLeds Lighting, U.S., LLC | Light emitting diode (LED) device that produces white light by performing phosphor conversion on all of the primary radiation emitted by the light emitting structure of the LED device |
6502956, | Mar 25 1999 | LEOTEK ELECTRONICS CORP | Light emitting diode lamp with individual LED lenses |
6504171, | Jan 24 2000 | LumiLeds Lighting, U.S., LLC | Chirped multi-well active region LED |
6504179, | May 29 2000 | Patent-Treuhand-Gesellschaft fur elektrische Gluhlampen mbh; Osram Opto Semiconductors GmbH & Co. OHG | Led-based white-emitting illumination unit |
6514782, | Dec 22 1999 | Lumileds LLC | Method of making a III-nitride light-emitting device with increased light generating capability |
6515313, | Dec 02 1999 | Cree, Inc | High efficiency light emitters with reduced polarization-induced charges |
6526082, | Jun 02 2000 | Lumileds LLC | P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction |
6526201, | Oct 12 2000 | Delphi Technologies, Inc. | Light transport coupler assembly |
6527411, | Aug 01 2000 | VARROC LIGHTING SYSTEMS S R O | Collimating lamp |
6534797, | Nov 03 2000 | Cree, Inc. | Group III nitride light emitting devices with gallium-free layers |
6541800, | Feb 22 2001 | Akron Brass Company | High power LED |
6547416, | Dec 21 2000 | SIGNIFY HOLDING B V | Faceted multi-chip package to provide a beam of uniform white light from multiple monochrome LEDs |
6547423, | Dec 22 2000 | SIGNIFY HOLDING B V | LED collimation optics with improved performance and reduced size |
6563142, | Jul 11 2001 | Lumileds LLC | Reducing the variation of far-field radiation patterns of flipchip light emitting diodes |
6570190, | Jun 03 1997 | Lumileds LLC | LED having angled sides for increased side light extraction |
6573537, | Dec 22 1999 | Lumileds LLC | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
6576488, | Jun 11 2001 | Lumileds LLC | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
6576932, | Mar 01 2001 | Lumileds LLC | Increasing the brightness of III-nitride light emitting devices |
6598998, | May 04 2001 | Lumileds LLC | Side emitting light emitting device |
6603243, | Mar 06 2000 | TELEDYNE LIGHTING AND DISPLAY PRODUCTS, INC | LED light source with field-of-view-controlling optics |
6603258, | Apr 24 2000 | Lumileds LLC | Light emitting diode device that emits white light |
6608330, | Sep 21 1998 | Nichia Corporation | Light emitting device |
6610598, | Nov 14 2001 | Solidlite Corporation | Surface-mounted devices of light-emitting diodes with small lens |
6620643, | Aug 05 1999 | Toyoda Gosei Co., Ltd. | Light-emitting device using group III nitride compound semiconductor |
6623142, | Feb 15 2002 | Delphi Technologies, Inc. | Method and apparatus for correcting optical non-uniformities in a light emitting diode |
6630689, | May 09 2001 | Lumileds LLC | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
6630691, | Sep 27 1999 | Lumileds LLC | Light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
6630692, | May 29 2001 | Lumileds LLC | III-Nitride light emitting devices with low driving voltage |
6635503, | Jan 28 2002 | CREE LED, INC | Cluster packaging of light emitting diodes |
6635904, | Mar 29 2001 | Lumileds LLC | Indium gallium nitride smoothing structures for III-nitride devices |
6637921, | Sep 28 2001 | SUZHOU LEKIN SEMICONDUCTOR CO , LTD | Replaceable LED bulb with interchangeable lens optic |
6639733, | Mar 16 2000 | Light Prescriptions Innovators, LLC | High efficiency non-imaging optics |
6642618, | Dec 21 2000 | Lumileds LLC | Light-emitting device and production thereof |
6642652, | Jun 11 2001 | Lumileds LLC | Phosphor-converted light emitting device |
6649440, | Jun 08 1999 | Philips Lumileds Lighting Company LLC; Lumileds LLC | Aluminum indium gallium nitride-based LED having thick epitaxial layer for improved light extraction |
6649943, | Jun 07 2001 | TOYODA GOSEI CO , LTD ; TOYODA GOESI CO , LTD | Group III nitride compound semiconductor light-emitting element |
6649946, | Nov 30 1999 | OSRAM Opto Semiconductors GmbH | Light source using a yellow-to-red-emitting phosphor |
6650044, | Oct 13 2000 | Lumileds LLC | Stenciling phosphor layers on light emitting diodes |
6657236, | Dec 03 1999 | Cree, Inc | Enhanced light extraction in LEDs through the use of internal and external optical elements |
6657300, | Jun 05 1998 | Lumileds LLC | Formation of ohmic contacts in III-nitride light emitting devices |
6664560, | Jun 15 2001 | Cree, Inc | Ultraviolet light emitting diode |
6671452, | Mar 23 1992 | 3M Innovative Properties Company | Luminaire device |
6679621, | Jun 24 2002 | Lumileds LLC | Side emitting LED and lens |
6680490, | Jun 15 2001 | Toyoda Gosei Co., Ltd.; Sanken Electric Co., Ltd. | Light-emitting device |
6680569, | Feb 18 1999 | Lumileds LLC | Red-deficiency compensating phosphor light emitting device |
6682207, | Jan 29 1999 | Lumileds LLC | Green phosphor converted light emitting diode |
6682331, | Sep 20 2002 | DOCUMENT SECURITY SYSTEMS, INC | Molding apparatus for molding light emitting diode lamps |
6683327, | Nov 13 2001 | Lumileds LLC | Nucleation layer for improved light extraction from light emitting devices |
6686691, | Sep 27 1999 | Lumileds LLC | Tri-color, white light LED lamps |
6696703, | Sep 27 1999 | Lumileds LLC | Thin film phosphor-converted light emitting diode device |
6711200, | Sep 07 1999 | California Institute of Technology | Tuneable photonic crystal lasers and a method of fabricating the same |
6717353, | Oct 14 2002 | Lumileds LLC | Phosphor converted light emitting device |
6717355, | Aug 28 2000 | TOYODA GOSEI CO , LTD | Light-emitting unit |
6730939, | Feb 15 2000 | Osram GmbH | Radiation emitting semiconductor device |
6730940, | Oct 29 2002 | Lumileds LLC | Enhanced brightness light emitting device spot emitter |
6734467, | Nov 03 1999 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | LED white light source with broadband excitation |
6737681, | Aug 22 2001 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
6738175, | Dec 13 1999 | Nichia Corporation | Light emitting device |
6740906, | Jul 23 2001 | CREE LED, INC | Light emitting diodes including modifications for submount bonding |
6744071, | Jan 28 2002 | Nichia Corporation | Nitride semiconductor element with a supporting substrate |
6744077, | Sep 27 2002 | Lumileds LLC | Selective filtering of wavelength-converted semiconductor light emitting devices |
6746124, | Feb 06 2001 | OPTICS 1 INCORPORATED | Flashlight producing uniform high brightness |
6746295, | Apr 22 1999 | Osram GmbH | Method of producing an LED light source with lens |
6747298, | Jul 23 2001 | CREE LED, INC | Collets for bonding of light emitting diodes having shaped substrates |
6759803, | Apr 22 1999 | Osram GmbH | LED light source with lens and corresponding production method |
6764932, | Oct 14 1999 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures |
6768136, | Aug 14 2001 | Osram GmbH | Radiation emitting structural element |
6768525, | Dec 01 2000 | Philips Lumileds Lighting Company LLC | Color isolated backlight for an LCD |
6774405, | Mar 05 2001 | Toyoda Gosei Co., Ltd.; Sanken Electric Co., Ltd. | Light-emitting device |
6777871, | Mar 31 2000 | ALLY BANK, AS COLLATERAL AGENT; ATLANTIC PARK STRATEGIC CAPITAL FUND, L P , AS COLLATERAL AGENT | Organic electroluminescent devices with enhanced light extraction |
6784027, | Nov 30 2001 | Osram Opto Semiconductor GmbH | Light-emitting semiconductor component |
6791103, | Nov 20 1992 | Nichia Corporation | Light-emitting gallium nitride-based compound semiconductor device |
6791116, | Apr 30 2002 | PANASONIC SEMICONDUCTOR SOLUTIONS CO , LTD | Light emitting diode |
6791119, | Feb 01 2001 | CREE LED, INC | Light emitting diodes including modifications for light extraction |
6794211, | Dec 02 1998 | SAMSUNG ELECTRONICS CO , LTD | Light emitting diode and method of fabricating thereof |
6794684, | Feb 01 2001 | CREE LED, INC | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
6794690, | Sep 18 2001 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting element |
6800500, | Feb 05 1999 | Lumileds LLC | III-nitride light emitting devices fabricated by substrate removal |
6800876, | Jan 16 2001 | CREE LED, INC | Group III nitride LED with undoped cladding layer (5000.137) |
6806571, | Mar 27 2000 | Toyoda Gosei Co., Ltd. | III nitride compound semiconductor element an electrode forming method |
6812053, | Oct 14 1999 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
6812500, | Jun 26 1996 | Osram AG | Light-radiating semiconductor component with a luminescence conversion element |
6814470, | May 08 2000 | LIGHT TRANSFORMATION TECHNOLOGIES LLC | Highly efficient LED lamp |
6819505, | Sep 08 2003 | Synopsys, Inc | Internally reflective ellipsoidal collector with projection lens |
6819506, | Sep 30 2003 | Infinity Trading Co. Ltd. | Optical lens system for projecting light in a lambertion pattern from a high power led light source |
6821804, | Dec 03 1999 | CREELED, INC | Enhanced light extraction in LEDs through the use of internal and external optical elements |
6825501, | Aug 29 1997 | Cree, Inc | Robust Group III light emitting diode for high reliability in standard packaging applications |
6828596, | Jun 13 2002 | Lumileds LLC | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
6828599, | Oct 05 2000 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor light-emitting diode |
6831302, | Apr 15 2003 | LUMINUS DEVICES, INC | Light emitting devices with improved extraction efficiency |
6831305, | Apr 23 2001 | Toyoda Gosei Co., Ltd. | Semiconductor light-emitting device |
6833564, | Nov 02 2001 | Lumileds LLC | Indium gallium nitride separate confinement heterostructure light emitting devices |
6835957, | Jul 30 2002 | Lumileds LLC | III-nitride light emitting device with p-type active layer |
6838705, | Mar 29 1999 | Nichia Corporation | Nitride semiconductor device |
6841931, | Apr 12 2001 | PANASONIC SEMICONDUCTOR SOLUTIONS CO , LTD | LED lamp |
6844565, | Feb 24 2000 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Semiconductor component for the emission of electromagnetic radiation and method for production thereof |
6844903, | Apr 04 2001 | Philips Lumileds Lighting Company LLC | Blue backlight and phosphor layer for a color LCD |
6846101, | Sep 28 2001 | OSRAM SYLVANIA Inc | Replaceable LED bulb with interchageable lens optic |
6847057, | Aug 01 2003 | Lumileds LLC | Semiconductor light emitting devices |
6850002, | Jul 28 2000 | FREESLATE, INC | Light emitting device for generating specific colored light, including white light |
6853010, | Sep 19 2002 | CREE LED, INC | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
6870191, | Jul 24 2001 | Nichia Corporation | Semiconductor light emitting device |
6870311, | Jun 07 2002 | Lumileds LLC | Light-emitting devices utilizing nanoparticles |
6871982, | Jan 24 2003 | SNAPTRACK, INC | High-density illumination system |
6872986, | Jul 04 2001 | Nichia Corporation | Nitride semiconductor device |
6876008, | Jul 31 2003 | Lumileds LLC | Mount for semiconductor light emitting device |
6876009, | Dec 09 2002 | Nichia Corporation | Nitride semiconductor device and a process of manufacturing the same |
6877558, | Oct 12 2001 | Halliburton Energy Services, Inc. | Apparatus and method for locating joints in coiled tubing operations |
6878973, | Aug 23 2001 | Lumileds LLC | Reduction of contamination of light emitting devices |
6885033, | Mar 10 2003 | CREE LED, INC | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
6885036, | Dec 01 1999 | Cree, Inc | Scalable LED with improved current spreading structures |
6888997, | Dec 05 2000 | Eastman Kodak Company | Waveguide device and optical transfer system for directing light to an image plane |
6890085, | Apr 12 2002 | OPTOTRONIC GMBH | LED module |
6891199, | Aug 11 2000 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Radiation-emitting semiconductor chip and light-emitting diode |
6896381, | Oct 11 2002 | Light Engine Limited | Compact folded-optics illumination lens |
6897488, | Nov 06 2000 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Radiation-emitting chip |
6897490, | Apr 26 2000 | Osram AG | Radiation emitting semiconductor component with luminescent conversion element |
6900472, | Dec 15 1997 | Philips Lumileds Lighting Company LLC; Lumileds LLC | Semiconductor light emitting device having a silver p-contact |
6900474, | Dec 20 2002 | Lumileds LLC | Light emitting devices with compact active regions |
6903376, | Dec 22 1999 | Lumileds LLC | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
6906352, | Jan 16 2001 | Cree, Inc | Group III nitride LED with undoped cladding layer and multiple quantum well |
6911676, | Jul 18 2002 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor LED device and method for manufacturing the same |
6916748, | Dec 31 2001 | Nanya Technology Corporation | Method of forming emitter tips on a field emission display |
6917059, | Oct 31 2002 | Toyoda Gosei Co., Ltd. | III group nitride system compound semiconductor light emitting element |
6921928, | Aug 27 2002 | Nichia Corporation | Nitride semiconductor element |
6924514, | Feb 19 2002 | Nichia Corporation | Light-emitting device and process for producing thereof |
6924596, | Nov 01 2001 | Nichia Corporation | Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same |
6925100, | Jul 19 2002 | Toyoda Gosei Co., Ltd. | Communication device |
6936859, | May 13 1998 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
6936860, | May 30 2001 | EPISTAR CORPORATION | Light emitting diode having an insulating substrate |
6943128, | Aug 24 2000 | TOYODA GOSEI CO , LTD | Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element |
6943380, | Dec 28 2000 | TOYODA GOSEI CO , LTD ; Tridonic Optoelectronics GmbH; Litec GBR; Leuchstoffwerk Breitungen GmbH | Light emitting device having phosphor of alkaline earth metal silicate |
6943381, | Jan 30 2004 | Lumileds LLC | III-nitride light-emitting devices with improved high-current efficiency |
6943433, | Mar 06 2002 | Nichia Corporation | Semiconductor device and manufacturing method for same |
6946682, | Aug 29 1997 | Cree, Inc. | Robust group III light emitting diode for high reliability in standard packaging applications |
6946685, | Aug 31 2000 | Lumileds LLC | Light emitting semiconductor method and device |
6952024, | Feb 13 2003 | CREELED, INC | Group III nitride LED with silicon carbide cladding layer |
6953952, | Sep 05 2002 | Nichia Corporation | Semiconductor device and an optical device using the semiconductor device |
6955933, | Jul 24 2001 | Lumileds LLC | Light emitting diodes with graded composition active regions |
6956245, | May 31 2002 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting element |
6956247, | May 26 2004 | Lumileds LLC | Semiconductor light emitting device including photonic band gap material and luminescent material |
6958497, | May 30 2001 | CREE LED, INC | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
6960878, | Jan 24 2001 | Nichia Corporation | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
6967116, | Feb 14 2003 | CREE LED, INC | Light emitting device incorporating a luminescent material |
6969946, | Oct 29 2002 | Lumileds LLC | Enhanced brightness light emitting device spot emitter |
6972438, | Sep 30 2003 | CREELED, INC | Light emitting diode with porous SiC substrate and method for fabricating |
6977396, | Feb 19 2003 | Lumileds LLC | High-powered light emitting device with improved thermal properties |
6987281, | Feb 13 2003 | CREELED, INC | Group III nitride contact structures for light emitting devices |
6987287, | Jul 15 2002 | EPISTAR CORPORATION | Light emitting diode having an adhesive layer and a reflective layer |
6987613, | Mar 30 2001 | Lumileds LLC | Forming an optical element on the surface of a light emitting device for improved light extraction |
6989555, | Apr 21 2004 | Lumileds LLC | Strain-controlled III-nitride light emitting device |
6992334, | Dec 22 1999 | Lumileds LLC | Multi-layer highly reflective ohmic contacts for semiconductor devices |
6993242, | Mar 23 1992 | 3M Innovative Properties Company | Luminaire device |
6995032, | Jul 19 2002 | Cree, Inc | Trench cut light emitting diodes and methods of fabricating same |
6998771, | Jul 23 1999 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Arrangement of luminescent materials, wavelength-converting casting compound and light source |
7001058, | May 16 2001 | VISUS, LTD | Ultra-thin backlight |
7002291, | May 29 2000 | Patent-Treuhand-Gesellschaft fur elektrische Gluhlampen mbh; OSRAM Opto Semiconductors GmbH | LED-based white-emitting illumination unit |
7005679, | May 01 2003 | CREELED, INC | Multiple component solid state white light |
7005681, | Aug 30 2001 | OSRAM Opto Semiconductors GmbH | Radiation-emitting semiconductor component and method for making same |
7005684, | Jun 06 2001 | TOYODA GOSEI CO , LTD | Group III nitride based semiconductor luminescent element |
7009008, | Aug 04 1999 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LIMITED | Transparent liquid resin material for SMT-enabled led-applications at higher temperatures and higher luminosities |
7009199, | Oct 22 2002 | IDEAL Industries Lighting LLC | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
7009213, | Jul 31 2003 | Lumileds LLC | Light emitting devices with improved light extraction efficiency |
7009218, | Feb 19 2003 | Nichia Corporation | Nitride semiconductor device |
7012279, | Oct 21 2003 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LIMITED | Photonic crystal light emitting device |
7012281, | Oct 30 2003 | EPISTAR CORPORATION | Light emitting diode device and manufacturing method |
7015054, | Dec 22 1999 | Lumileds LLC | Semiconductor light emitting device and method |
7015513, | Feb 20 2004 | EPISTAR CORPORATION | Organic adhesive light-emitting device with a vertical structure |
7015516, | Nov 16 2000 | GELcore LLC | Led packages having improved light extraction |
7018915, | Mar 27 2000 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method for forming an electrode |
7021797, | May 13 2003 | Light Engine Limited | Optical device for repositioning and redistributing an LED's light |
7026653, | Jan 27 2004 | Lumileds LLC | Semiconductor light emitting devices including current spreading layers |
7029935, | Sep 09 2003 | CREE LED, INC | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
7029939, | Jun 18 2001 | TOYODA GOSEI CO , LTD | P-type semiconductor manufacturing method and semiconductor device |
7030423, | Nov 21 2002 | EPISTAR CORPORATION | Package structure for light emitting diode and method thereof |
7037741, | Mar 28 2003 | EPISTAR CORPORATION | Compound semiconductor optoelectronic device |
7038246, | Jul 25 2002 | TOYODA GOSEI CO , LTD | Light emitting apparatus |
7038370, | Feb 23 2004 | Lumileds LLC | Phosphor converted light emitting device |
7040774, | May 23 2003 | Goldeneye, Inc. | Illumination systems utilizing multiple wavelength light recycling |
7042012, | May 27 2002 | TOYODA GOSEI CO , LTD | Semiconductor light-emitting device |
7042153, | Feb 12 2002 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light emitting element |
7045956, | May 06 2002 | Osram GmbH | Light emitting diode with wavelength conversion |
7053417, | Sep 04 2000 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor led device and producing method |
7053419, | Sep 12 2000 | Lumileds LLC | Light emitting diodes with improved light extraction efficiency |
7063807, | Mar 15 2001 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Phosphor for light sources and associated light source |
7064353, | May 26 2004 | Lumileds LLC | LED chip with integrated fast switching diode for ESD protection |
7064355, | Sep 12 2000 | Lumileds LLC | Light emitting diodes with improved light extraction efficiency |
7064480, | Jul 28 2000 | Patent-Treuhand-Gesellschaft fur elektrische Gluhlampen mbh | Illumination device with at least one led as the light source |
7070300, | Jun 04 2004 | SIGNIFY NORTH AMERICA CORPORATION | Remote wavelength conversion in an illumination device |
7071494, | Dec 11 2002 | Lumileds LLC | Light emitting device with enhanced optical scattering |
7071495, | Oct 31 2002 | Toyoda Gosei Co., Ltd. | III group nitride system compound semiconductor light emitting element and method of making same |
7072096, | Dec 14 2001 | SNAPTRACK, INC | Uniform illumination system |
7074631, | Apr 15 2003 | LUMINUS DEVICES, INC | Light emitting device methods |
7075610, | Sep 16 1997 | ARMY, UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE; GOVERNMENT OF THE UNITED STATES SECRETARY OF THE ARMY DEPT OF THE ARMY - OFFICE OF THE SECRETARY | Liquid crystal display device and light emitting structure with photonic band gap transparent electrode structures |
7078254, | Dec 06 2002 | CREELED, INC | LED package die having a small footprint |
7078732, | Jun 26 1996 | Osram AG | Light-radiating semiconductor component with a luminescence conversion element |
7078738, | Feb 12 2003 | TOYODA GOSEI CO , LTD | Light-emitting device |
7080932, | Jan 26 2004 | SIGNIFY NORTH AMERICA CORPORATION | LED with an optical system to increase luminance by recycling emitted light |
7083993, | Apr 15 2003 | LUMINUS DEVICES, INC | Methods of making multi-layer light emitting devices |
7087738, | Oct 24 1997 | Genentech, Inc. | Secreted and transmembrane polypeptides and nucleic acids encoding the same |
7087931, | Apr 13 2004 | BIING-JAY LEE; EPISTAR CORPORATION | High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof |
7087936, | Apr 30 2003 | CREE LED, INC | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction |
7091656, | Apr 20 2001 | Nichia Corporation | Light emitting device |
7095765, | Dec 26 2002 | EPISTAR CORPORATION | Light emitter with a voltage dependent resistor layer |
7098588, | Dec 30 1999 | OSRAM Opto Semiconductors GmbH | Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source |
7105857, | Jul 08 2002 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
7106090, | Nov 19 1999 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Optical semiconductor device with multiple quantum well structure |
7108386, | May 12 2003 | IDEAL Industries Lighting LLC | High-brightness LED-phosphor coupling |
7109521, | Mar 18 2004 | Cree, Inc.; ABB AB INCORPORATED | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
7109529, | May 13 1998 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
7111964, | Mar 14 2003 | TOYODA GOSEI CO , LTD | LED package |
7112636, | Dec 06 2002 | Nichia Corporation | Epoxy resin composition |
7122839, | Oct 29 2004 | Lumileds LLC | Semiconductor light emitting devices with graded composition light emitting layers |
7132695, | Oct 16 2002 | EPISTAR CORPORATION | Light emitting diode having a dual dopant contact layer |
7132786, | Jul 23 1999 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Luminescent array, wavelength-converting sealing material and light source |
7138662, | Sep 18 2002 | Toyoda Gosei Co., Ltd. | Light-emitting device |
7153015, | Dec 31 2001 | INNOVATIONS IN OPTICS, INC | Led white light optical system |
7154121, | Dec 23 2002 | EPISTAR CORPORATION | Light emitting device with a micro-reflection structure carrier |
7154149, | Jul 31 2003 | EPISTAR CORPORATION | EDS protection configuration and method for light emitting diodes |
7157294, | Jun 06 2001 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting element |
7161187, | Mar 28 2001 | Toyoda Gosei Co., Ltd. | Light emitting diode and manufacturing method thereof |
7161301, | Jan 30 2003 | EPISTAR CORPORATION | Nitride light-emitting device having an adhesive reflecting layer |
7170097, | Feb 14 2003 | CREE LED, INC | Inverted light emitting diode on conductive substrate |
7183586, | Nov 17 2004 | Nichia Corporation | Semiconductor element and manufacturing method for the same |
7183632, | Jul 29 1997 | Osram GmbH | Surface-mountable light-emitting diode structural element |
7183661, | May 31 2000 | OSRAM Opto Semiconductors GmbH | Epoxy-resin systems, which are resistant to aging, moulding materials, components produced therefrom and the use thereof |
7192797, | Feb 03 2005 | BIING-JAY LEE; EPISTAR CORPORATION | Light emitting device and manufacture method thereof |
7193299, | Aug 21 2001 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Conductor frame and housing for a radiation-emitting component, radiation-emitting component and display and/or illumination system using radiation-emitting components |
7196359, | Aug 13 2001 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Radiation-emitting chip and radiation-emitting component |
7201495, | Aug 03 2004 | Lumileds LLC | Semiconductor light emitting device package with cover with flexible portion |
7202181, | Mar 26 2004 | CREE LED, INC | Etching of substrates of light emitting devices |
7211832, | Jan 13 2004 | Toyoda Gosei Co., Ltd. | Light emitting apparatus |
7211833, | Jul 23 2001 | CREE LED, INC | Light emitting diodes including barrier layers/sublayers |
7211835, | Jul 09 2003 | Nichia Corporation | Light emitting device, method of manufacturing the same and lighting equipment |
7215074, | Jul 29 1996 | Nichia Corporation | Light emitting device with blue light led and phosphor components |
7217583, | Sep 21 2004 | CREELED, INC | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
7227190, | Sep 30 2002 | TridonicAtco Optoelectronics Gmbh | White light emitting device |
7227191, | Apr 30 2004 | OSRAM Opto Semiconductors GmbH | Optoelectronic component having a plurality of current expansion layers and method for producing it |
7244968, | Jun 03 2003 | SAMSUNG ELECTRONICS CO , LTD | GaN-based semiconductor junction structure |
7247257, | Apr 20 2001 | Nichia Corporation | Light emitting device |
7247884, | Jun 08 2001 | TOYODA GOSEI CO , LTD | Group III nitride compound semiconductor light-emitting element |
7247940, | Feb 28 2003 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Optoelectronic device with patterned-metallized package body, method for producing such a device and method for the patterned metallization of a plastic-containing body |
7250715, | Feb 23 2004 | Lumileds LLC | Wavelength converted semiconductor light emitting devices |
7253450, | Sep 17 2003 | TOYODA GOSEI CO , LTD | Light-emitting device |
7253451, | Nov 29 2004 | EPIVALLEY CO , LTD F K A SUNGIL TELECOM CO , LTD | III-nitride semiconductor light emitting device |
7256428, | Jun 20 2001 | OSRAM Opto Semiconductors GmbH | Optoelectronic component and method for the production thereof |
7256468, | Apr 17 2001 | Nichia Corporation | Light emitting device |
7256483, | Oct 28 2004 | Lumileds LLC | Package-integrated thin film LED |
7258816, | Mar 22 2002 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
7259033, | Jul 23 2001 | CREE LED, INC | Flip-chip bonding of light emitting devices |
7259402, | Sep 22 2004 | CREE LED, INC | High efficiency group III nitride-silicon carbide light emitting diode |
7264527, | Jul 09 1999 | Lumileds LLC | Quantum dot white and colored light-emitting devices |
7265392, | May 26 2000 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same |
7268371, | Jun 03 1997 | Philips Lumileds Lighting Company LLC | Light extraction from a semiconductor light emitting device via chip shaping |
7274040, | Oct 06 2004 | Lumileds LLC | Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
7276737, | Jul 31 2003 | Philips Lumileds Lighting Company LLC; Lumileds LLC | Light emitting devices with improved light extraction efficiency |
7279346, | Mar 31 2004 | CREE LED, INC | Method for packaging a light emitting device by one dispense then cure step followed by another |
7279723, | Mar 20 2003 | TOYODA GOSEI CO , LTD ; KOHA CO , LTD | LED lamp |
7279724, | Feb 25 2004 | Lumileds LLC | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
7280288, | Jun 04 2004 | CREELED, INC | Composite optical lens with an integrated reflector |
7282744, | May 09 2003 | CREELED, INC | III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier |
7288797, | Jan 20 2004 | Nichia Corporation | Semiconductor light emitting element |
7291529, | Nov 12 2003 | CREE LED, INC | Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon |
7291865, | Sep 29 2004 | Toyoda Gosei Co., Ltd.; TOYODA GOSEI CO , LTD | Light-emitting semiconductor device |
7294866, | Mar 01 2004 | EPISTAR CORPORATION | Flip-chip light-emitting device with micro-reflector |
7319247, | Apr 26 2000 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Light emitting-diode chip and a method for producing same |
7319289, | Mar 10 2003 | TOYODA GOSEI CO , LTD ; SUMITA OPTICAL GLASS INC | Light emitting device |
7326583, | Mar 31 2004 | CREE LED, INC | Methods for packaging of a semiconductor light emitting device |
7326967, | Jul 12 2004 | EPISTAR CORPORATION | Light emitting diode having an omnidirectional reflector including a transparent conductive layer |
7329587, | Jun 24 2003 | OSRAM Opto Semiconductors GmbH | Method for the production of semi-conductor chips |
7329905, | Jun 30 2004 | CREE LED, INC | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
7332365, | May 18 2004 | CREELED, INC | Method for fabricating group-III nitride devices and devices fabricated using method |
7335522, | Mar 18 2003 | BIING-JAY LEE; EPISTAR CORPORATION | Package structure for light emitting diode and method thereof |
7335920, | Jan 24 2005 | CREE LED, INC | LED with current confinement structure and surface roughening |
7338822, | May 09 2003 | CREE LED, INC | LED fabrication via ion implant isolation |
7341878, | Mar 14 2005 | Lumileds LLC | Wavelength-converted semiconductor light emitting device |
7344902, | Nov 15 2004 | Lumileds LLC | Overmolded lens over LED die |
7345297, | Feb 09 2004 | Nichia Corporation | Nitride semiconductor device |
7345313, | Oct 26 2001 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Nitride-based semiconductor component such as a light-emitting diode or a laser diode |
7345413, | Feb 20 2003 | OSRAM Gesellschaft mit beschrankter Haftung | Coated luminescent material and light-emitting device having such a luminescent material |
7348600, | Oct 20 2003 | Nichia Corporation; Yoichi, Kawakami; Mitsuru, Funato; Shigeo, Fujita; California Institute of Technology | Nitride semiconductor device, and its fabrication process |
7351356, | Sep 24 2002 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Luminescent material, especially for LED application |
7352011, | Nov 15 2004 | Lumileds LLC | Wide emitting lens for LED useful for backlighting |
7355209, | Feb 05 2005 | EPISTAR CORPORATION | Light emitting diode and method making the same |
7355210, | Mar 24 2004 | EPISTAR CORPORATION | High-efficiency light-emitting element |
7355284, | Mar 29 2004 | CREE LED, INC | Semiconductor light emitting devices including flexible film having therein an optical element |
7358522, | Nov 05 2001 | Nichia Corporation | Semiconductor device |
7358540, | Jan 16 2004 | EPISTAR CORPORATION | Organic adhesive light-emitting device with ohmic metal contact |
7361938, | Jun 03 2004 | Lumileds LLC | Luminescent ceramic for a light emitting device |
7362048, | Jul 29 1996 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device with blue light led and phosphor components |
7365369, | Jun 11 1997 | Nichia Corporation | Nitride semiconductor device |
7365371, | Aug 04 2005 | CREE LED, INC | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
7368329, | Jun 30 1998 | Osram GmbH | Diode housing |
7372198, | Sep 23 2004 | CREE LED, INC | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
7375377, | Jul 03 2000 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Ingan-based light-emitting diode chip and a method for the production thereof |
7382033, | Dec 20 2002 | TOYODA GOSEI CO , LTD ; ROTH, GUNDULA; TEWS, WALTER | Luminescent body and optical device including the same |
7384809, | Apr 01 2004 | CREE LED, INC | Method of forming three-dimensional features on light emitting diodes for improved light extraction |
7385226, | Mar 24 2004 | EPISTAR CORPORATION | Light-emitting device |
7387677, | Dec 11 2002 | AMMONO SP Z O O ; Nichia Corporation | Substrate for epitaxy and method of preparing the same |
7388232, | Oct 31 2003 | Toyoda Gosei Co., Ltd. | Light emitting element and light emitting device |
7390684, | Oct 12 2001 | Nichia Corporation | Light emitting apparatus and method of manufacturing the same |
7393122, | Oct 04 2004 | Toyoda Gosei Co., Ltd. | Lamp |
7393213, | May 19 2004 | EPIVALLEY CO , LTD FORMERLY SUNGIL TELECOM CO , LTD | Method for material growth of GaN-based nitride layer |
7402837, | Nov 12 2003 | CREE LED, INC | Light emitting devices with self aligned ohmic contacts |
7402840, | Sep 27 2002 | Philips Lumileds Lighting Company, LLC | Selective filtering of wavelength-converted semiconductor light emitting devices |
7405093, | Aug 18 2004 | CREE LED, INC | Methods of assembly for a semiconductor light emitting device package |
7414269, | May 30 2003 | OSRAM Opto Semiconductors GmbH | Housing for a radiation-emitting component, method for the production thereof, and radiation-emitting component |
7419839, | Nov 12 2004 | Lumileds LLC | Bonding an optical element to a light emitting device |
7429750, | Mar 23 2004 | TOYODA GOSEI CO , LTD | Solid-state element and solid-state element device |
7429758, | Jun 28 2002 | OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH | Optoelectronic component and method for producing it |
7432534, | Mar 05 2004 | EPIVALLEY CO , LTD F K A SUNGIL TELECOM CO , LTD | III-nitride semiconductor light emitting device |
7432536, | Nov 04 2004 | Cree, Inc | LED with self aligned bond pad |
7432589, | Apr 19 2006 | Nichia Corporation | Semiconductor device |
7432642, | Apr 25 2002 | Nichia Corporation | Semiconductor light emitting device provided with a light conversion element using a haloborate phosphor composition |
7432647, | Jul 09 2004 | CITIZEN ELECTRONICS CO , LTD | Light source having phosphor including divalent trivalent and tetravalent elements |
7436002, | Jun 29 2001 | Osram GmbH | Surface-mountable radiation-emitting component |
7436066, | Oct 19 2004 | Nichia Corporation | Semiconductor element |
7439091, | Mar 17 2006 | EPISTAR CORPORATION | Light-emitting diode and method for manufacturing the same |
7439609, | Mar 29 2004 | CREE INC | Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures |
7442254, | Apr 11 1997 | Nichia Corporation | Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer |
7442644, | Jul 21 2004 | Nichia Corporation | Method for manufacturing nitride semiconductor wafer or nitride semiconductor device; nitride semiconductor wafer or nitride semiconductor device made by the same; and laser irradiating apparatus used for the same |
7442966, | Sep 30 2002 | Osram GmbH | Electromagnetic radiation emitting semiconductor chip and procedure for its production |
7445354, | Sep 27 2005 | Nichia Corporation | Light emitting apparatus |
7446343, | Jan 16 2006 | Lumileds LLC | Phosphor converted light emitting device |
7446344, | Sep 28 2001 | OSRAM Opto Semiconductors GmbH | Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component |
7446345, | Apr 29 2005 | CREE LED, INC | Light emitting devices with active layers that extend into opened pits |
7446346, | Jan 31 2003 | OSRAM Opto Semiconductors GmbH | Semiconductor substrate for optoelectronic components and method for fabricating it |
7452737, | Nov 15 2004 | Lumileds LLC | Molded lens over LED die |
7456499, | Jun 04 2004 | CREELED, INC | Power light emitting die package with reflecting lens and the method of making the same |
7462861, | Apr 28 2004 | CREE LED, INC | LED bonding structures and methods of fabricating LED bonding structures |
7473933, | Oct 29 2004 | LED ENGIN, INC | High power LED package with universal bonding pads and interconnect arrangement |
7772604, | Jan 05 2006 | Illumitex | Separate optical device for directing light from an LED |
7789531, | Oct 02 2006 | Illumitex, Inc.; ILLUMITEX, INC | LED system and method |
7829358, | Feb 08 2008 | ILLUMITEX, INC | System and method for emitter layer shaping |
7968896, | Jan 05 2006 | Illumitex, Inc. | Separate optical device for directing light from an LED |
8087960, | Oct 02 2006 | Illumitex, Inc. | LED system and method |
8263993, | Feb 08 2008 | Illumitex, Inc. | System and method for emitter layer shaping |
8449128, | Aug 20 2009 | ILLUMITEX, INC | System and method for a lens and phosphor layer |
8585253, | Aug 20 2009 | ILLUMITEX, INC | System and method for color mixing lens array |
20020012247, | |||
20020017844, | |||
20020030194, | |||
20020080615, | |||
20020080622, | |||
20020123164, | |||
20020127864, | |||
20020141006, | |||
20020163808, | |||
20030002272, | |||
20030089914, | |||
20030132447, | |||
20030156416, | |||
20040016718, | |||
20040036080, | |||
20040046489, | |||
20040079957, | |||
20040114393, | |||
20040120153, | |||
20040126913, | |||
20040155565, | |||
20040201987, | |||
20040207774, | |||
20040218390, | |||
20040222426, | |||
20040232825, | |||
20040233665, | |||
20040264185, | |||
20050001230, | |||
20050006651, | |||
20050007777, | |||
20050018248, | |||
20050024887, | |||
20050047729, | |||
20050051782, | |||
20050063181, | |||
20050073840, | |||
20050073849, | |||
20050077529, | |||
20050093430, | |||
20050173719, | |||
20050195488, | |||
20050215000, | |||
20050218790, | |||
20050285129, | |||
20060001037, | |||
20060044523, | |||
20060046622, | |||
20060091414, | |||
20060094340, | |||
20060108590, | |||
20060192194, | |||
20070063214, | |||
20070120135, | |||
20070152230, | |||
20080030974, | |||
20080030993, | |||
20080062672, | |||
20080080166, | |||
20080081531, | |||
20080266893, | |||
20090085043, | |||
20090085052, | |||
20090087937, | |||
20090087994, | |||
20090189512, | |||
20090275157, | |||
20090275266, | |||
20090309116, | |||
20110044022, | |||
20110273894, | |||
20120068615, | |||
20150036358, | |||
D453745, | Dec 27 1999 | Nichia Corporation | Light emitting diode |
D477579, | Dec 27 1999 | Nichia Corporation | Light emitting diode |
D477580, | Jan 30 2002 | Nichia Corporation | Light emitting diode |
D478877, | Nov 21 2001 | Nichia Corporation | Light emitting diode |
D482337, | Dec 28 2001 | Nichia Corporation | Light emitting diode (LED) |
D482666, | Nov 30 2001 | Nichia Corporation | Light emitting diode (LED) |
D489690, | Jun 05 2003 | Nichia Corporation | Light emitting diode (LED) |
D490387, | Nov 22 2001 | Nichia Corporation | Light emitting diode |
D490782, | Dec 27 1999 | Nichia Corporation | Light emitting diode |
D490784, | May 01 2002 | Nichia Corporation | Light emitting diode |
D491538, | Nov 02 2001 | Nichia Corporation | Light emitting diode |
D491899, | May 22 2002 | Nichia Corporation | Light emitting diode |
D495822, | May 16 2003 | CCS, INC | Attachment lens for LED |
D496007, | Nov 21 2001 | Nichia Corporation | Light emitting diode |
D497349, | Nov 21 2001 | Nichia Corporation | Light emitting diode |
D499384, | Dec 28 2001 | Nichia Corporation | Light emitting diode |
D499385, | May 01 2002 | Nichia Corporation | Light emitting diode |
D502449, | Dec 06 2002 | Nichia Corporation | Light emitting diode (LED) |
D503388, | May 01 2002 | Nichia Corporation | Light emitting diode |
D506449, | Nov 21 2001 | Nichia Corporation | Light emitting diode |
D510913, | Sep 09 2003 | Nichia Corporation | Light emitting diode |
D534505, | Dec 28 2001 | Nichia Corporation | Light emitting diode |
D536672, | Sep 05 2002 | Nichia Corporation | Light emitting diode |
D537047, | Sep 05 2002 | Nichia Corporation | Light emitting diode |
D547736, | Dec 28 2001 | Nichia Corporation | Light emitting diode |
D557224, | Dec 28 2001 | Nichia Corporation | Light emitting diode |
D565516, | Dec 28 2001 | Nichia Corporation | Light emitting diode |
D571738, | Jun 14 2007 | Lumileds LLC | LED package |
D572209, | Aug 04 2006 | Nichia Corporation | Light emitting diode |
D578226, | Jul 20 2006 | Lumileds LLC | LED package |
D580380, | Aug 04 2006 | Nichia Corporation | Light emitting diode |
D582865, | Jun 11 2007 | CREE LED, INC | LED chip |
D582866, | Sep 07 2007 | CREE LED, INC | LED chip |
EP534843, | |||
EP1380469, | |||
JP2000180962, | |||
JP200353647, | |||
JP2005109289, | |||
JP2005197728, | |||
JP2005217094, | |||
JP2005327820, | |||
JP2005537631, | |||
JP2007035951, | |||
JP2007281260, | |||
JP2008041739, | |||
JP3900144, | |||
WO2004021461, | |||
WO2007061638, |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Jun 29 2011 | KO, HYUNCHUL | ILLUMITEX, INC | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 032145 | /0273 | |
Aug 15 2011 | DUONG, DUNG T | ILLUMITEX, INC | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 032145 | /0273 | |
Aug 15 2011 | JOHNSON, RANDALL E | ILLUMITEX, INC | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 032145 | /0273 | |
Aug 16 2011 | WINBERG, PAUL N | ILLUMITEX, INC | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 032145 | /0273 | |
Aug 19 2011 | RADKOV, EMIL | ILLUMITEX, INC | ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS | 032145 | /0273 | |
Oct 18 2013 | Illumitex, Inc. | (assignment on the face of the patent) | / | |||
Aug 22 2016 | ILLUMITEX, INC | Silicon Valley Bank | SECURITY INTEREST SEE DOCUMENT FOR DETAILS | 040174 | /0344 |
Date | Maintenance Fee Events |
Mar 11 2019 | REM: Maintenance Fee Reminder Mailed. |
Aug 26 2019 | EXP: Patent Expired for Failure to Pay Maintenance Fees. |
Date | Maintenance Schedule |
Jul 21 2018 | 4 years fee payment window open |
Jan 21 2019 | 6 months grace period start (w surcharge) |
Jul 21 2019 | patent expiry (for year 4) |
Jul 21 2021 | 2 years to revive unintentionally abandoned end. (for year 4) |
Jul 21 2022 | 8 years fee payment window open |
Jan 21 2023 | 6 months grace period start (w surcharge) |
Jul 21 2023 | patent expiry (for year 8) |
Jul 21 2025 | 2 years to revive unintentionally abandoned end. (for year 8) |
Jul 21 2026 | 12 years fee payment window open |
Jan 21 2027 | 6 months grace period start (w surcharge) |
Jul 21 2027 | patent expiry (for year 12) |
Jul 21 2029 | 2 years to revive unintentionally abandoned end. (for year 12) |