Embodiments described herein provide optical systems that can mix colors to produce illumination patterns having a large area with uniform color. One embodiment of an optical system can include a set of optical units that each produces an illumination pattern with uniform color and intensity. The optical units are spaced so that the individual illumination patterns overlap to create an overall illumination pattern with an overlap area. In the overlap area, the colors emitted by the individual optical units mix to create a desired color. Embodiments of optical systems can provide beam control so that the optical units emit a high percentage of light in beam.

Patent
   9086211
Priority
Aug 20 2009
Filed
Oct 18 2013
Issued
Jul 21 2015
Expiry
Dec 23 2029

TERM.DISCL.
Assg.orig
Entity
Small
4
556
EXPIRED
1. An optical system comprising:
a base;
a housing coupled to the base, the housing having a set of outer sidewalls;
an array of leds disposed in the housing;
a lens array optically coupled to the array of leds, the lens array further comprising a set of lenses disposed in the housing, wherein:
each lens in the set of lenses is positioned to receive light from a corresponding led and is separated from the corresponding led by a gap;
each lens in the set of lenses is configured to project a majority of light entering the lens in a selected half angle in a rectangular illumination pattern; and
the lenses in the set of lenses are spaced so that illumination patterns from the lenses overlap to produce a rectangular overall illumination pattern in the selected half angle, the illumination pattern with an overlap area;
a lens cover coupled to the housing; and
an encapsulant disposed between each led and corresponding lens.
2. The optical system of claim 1, wherein the housing comprises a set of lens cavity sidewalls and defines a set of lens cavities.
3. The optical system of claim 2, wherein the lens cavity sidewalls and outer sidewalls are transparent.
4. The optical system of claim 2, wherein the set of lens cavity sidewalls form a diffuse white reflector.
5. The optical system of claim 1, further comprising:
a first phosphor disposed between a first led and a corresponding first lens that down converts light from the first led to red light;
a second phosphor disposed between a second led and a corresponding second lens that down converts light from the second led to green light.
6. The optical system of claim 5, further comprising a third phosphor disposed between a third led and a corresponding third lens that down converts light from the third led to blue light.
7. The optical system of claim 1, wherein the overlap area has a substantially uniform color profile.
8. The optical system of claim 7, wherein the overall illumination pattern comprises a non-uniform border area corresponding to a width of one or more rows of lenses.
9. The optical system of claim 8, wherein:
the overlap area size is dependent on a lens to target surface distance; and
the border area width is independent of the lens to target surface distance.
10. The optical system of claim 9, wherein a percentage of the overall illumination pattern having the uniform color profile approaches 100% as the lens to target surface distance increases.
11. The optical system of claim 1, wherein each lens in the set of lenses is configured such that at least 50%-95% of light emitted by the lens is emitted in the selected half angle.
12. The optical system of claim 11, wherein the selected half angle is 10-60 degrees.
13. The optical system of claim 1, wherein the housing defines a set of led cavities and each led in the array of leds is disposed in a separate cavity.
14. The optical system of claim 1, wherein the set of lenses and array of leds are packaged so that each lens only receives light from the corresponding led and does not receive light from any other led in the array of leds.
15. The optical system of claim 1, wherein the lens cover is integrated with the set of lenses.
16. The optical system of claim 1, wherein the rectangular overall illumination pattern is square.
17. The optical system of claim 1, wherein the optical system comprises a white light unit.

This application is a continuation of, and claims a benefit of priority under 35 U.S.C. 120 of the filing date of U.S. patent application Ser. No. 13/077,594, entitled “System and Method for a Phosphor Coated Lens” by Duong et al., filed Mar. 31, 2011, which claims the benefit of priority under 35 U.S.C. 119(e) to U.S. Provisional Patent Application No. 61/319,739, entitled “System and Method for Phosphor Coated Lens,” by Ko et al., filed Mar. 31, 2010, and claims the benefit of priority under 35 U.S.C. 120 as a continuation-in-part of U.S. patent application Ser. No. 12/646,570, entitled “System and Method for a Phosphor Coated Lens” by Ko et al., filed Dec. 23, 2009, issued as U.S. Pat. No. 8,449,128 on May 28, 2013, which claims the benefit of priority to U.S. Provisional Patent No. 61/235,491, entitled “Phosphor Coated Lens for Phosphor Converting Type White Light Engine” by Ko et al., filed Aug. 20, 2009. Each of the applications referenced above in this paragraph is hereby fully incorporated by reference herein.

The present disclosure relates generally to optical systems. More particularly, the present disclosure relates to using arrays of optical units to create highly uniform light distributions with selected color and/or color temperature.

Phosphors are isotropic emitters, emitting light in all directions. In traditional LED implementations, phosphor is applied on the LED chip, in a silicone matrix in proximity to the LED or to the outside of an LED dome or other LED packaging. A dome or lens may be applied to an LED chip coated with phosphor to control the light beam angle (shape) from lambertian to a very narrow spot. Such devices range from hemispherical lenses to T-5 mm (T 1¾) aspheres. One conventional system for producing white light LEDs, for example, is constructed with pump blue/UV LED chips and a proximate mixture of phosphor in a binding matrix such as silicone. The term “goop in a cup” is used to describe LEDs with flat or very nearly flat phosphor and silicone mixture over a blue pump within a reflective cup. In remote phosphor systems, phosphor is applied away from the chip on the outside of a dome or inside of a hemispherical shell to increase converting efficiency. However, an additional lens may be needed to control light beam shape. The GE Vio™ employs the remote phosphor solution.

Current systems suffer efficiency losses due to heating of the LED chip and the phosphor particles. Additionally, many current systems require secondary optics or additional lenses to shape the light emitted from a dome or phosphor coated LED into a desired beam angle. The coupling of a lens to a dome causes efficiency losses of approximately 10% or greater. Furthermore, current systems suffer conversion losses when multiple color phosphors are used due to cross-excitation. For instance, a red-emitting phosphor may absorb down-converted light from a green-emitting phosphor instead of the pump wavelength, thereby introducing further losses.

Embodiments described herein provide optical systems that provide illumination patterns having a large area with uniform color. One embodiment of an optical system can include a set of optical units that each produces an illumination pattern with uniform color and intensity. The optical units are spaced so that the individual illumination patterns overlap to create an overall illumination pattern with an overlap area. The color in the overlap area results from blending of the colors emitted by the individual optical units.

The various optical units can be selected to have a high percent of light in beam. By way of example, but not limitation, optical units can be selected to achieve a high percent of light in beam (e.g., greater than 50%, greater than 60%, greater than 70% to greater than 90% and approaching 100%) in a range of beam angles (for example, but not limited to full beam (full width half maximum) angles of 10-120 degrees. Consequently, the overall array can also have a high percent of light in beam.

One embodiment of an optical system comprises an LED array with a set of lenses optically coupled to the LED array. Each lens can be configured to emit a high percent of light in a selected beam angle and the lenses can be spaced so that illumination patterns from adjacent lenses overlap to produce an overall illumination pattern. The overall illumination pattern can have an overlap area having a uniform color profile. The overall illumination pattern may have a non-uniform border area corresponding to the width of a row of lenses.

One embodiment of an optical unit can include an LED, a lens and phosphor disposed on the lens. The phosphors are disposed on the lens between the entrance face to the lens body and the LED so that light emitted from the LED will be incident on the phosphor and at least partially down converted before entering the lens body through the entrance face.

Optical units can be arranged in a packaged array. One embodiment of a packaged array comprises a submount, an array of LEDs mounted to the submount, a housing and a set of lenses. The LED is positioned in an LED cavity and the lens is positioned in a lens cavity so that the lens' entrance face is positioned proximate to an opening between the corresponding lens and LED cavities. A layer of phosphors can be disposed on each site between the entrance face and the corresponding LED so that light is down converted before entering the lens body. In one embodiment, the entrance face of each lens is positioned a distance from the corresponding LED so that there is a gap between the LED and the phosphors.

One advantage provided by embodiments described herein is that phosphor is removed from the LED chip. Heating of the LED chip is therefore reduced or prevented.

As another advantage, phosphor conversion efficiency can be increased due to the separation of phosphor from the LED active layer. Self-heating of phosphor due to the Stokes shift can be suppressed by heat dissipation through the system submount/heatsink.

As yet another advantage, higher phosphor conversion efficiency can be achieved due to the lowered flux density at the entrance of the lens, as compared to the flux density at the LED chip.

As another advantage of various embodiments, positioning phosphor at the entrance surface of a brightness conserving separate optical device can provide an optimal balance between thermal consideration and effective phosphor package efficiencies.

As yet another advantage, light beam pattern control, color mixing and color conversion can be achieved at the same optical device.

Embodiments can provide another advantage by providing a uniform spatial distribution at far field using a brightness conserving lens, making it possible for the underlying optical system to conserve the etendue of the source. Embodiments of described herein provide another advantage by allowing for near and/or far field color and spatial uniformity or for near and/or far field tailored color distribution and spatial distribution.

A more complete understanding of the embodiments and the advantages thereof may be acquired by referring to the following description, taken in conjunction with the accompanying drawings in which like reference numbers indicate like features and wherein:

FIGS. 1A and 1B are diagrammatic representations showing an optical unit with a 30 degree half-angle;

FIG. 2 is a diagrammatic representation of an array of optical units and a resulting light pattern;

FIGS. 3A-3C are diagrammatic representations of arrangements of color light sources;

FIG. 4 is a diagrammatic representation of an embodiment of an array of optical units and a controller;

FIGS. 5-8 are diagrammatic representations of embodiments of optical systems;

FIGS. 9-10 are diagrammatic representations of embodiments of phosphor coated lenses;

FIG. 11 is a diagrammatic representation of one embodiment of a packaged array;

FIG. 12 is a diagrammatic representation of a cross-section of an embodiment of a packaged array;

FIG. 13 is a diagrammatic representation of an LED in a cavity;

FIG. 14 is a diagrammatic representation of a portion of an embodiment of a packaged array;

FIG. 15 is a diagrammatic representation of another portion of an embodiment of a packaged array;

FIG. 16 is a diagrammatic representation of an array of LEDs mounted on a submount;

FIG. 17 is a diagrammatic representation of an embodiment of a portion of a housing of a packaged array;

FIG. 18 is a diagrammatic representation of a portion of another embodiment of a packaged array;

FIG. 19 is a diagrammatic representation of another portion of the embodiment of the packaged array;

FIG. 20 is a diagrammatic representation of an embodiment of a lens assembly;

FIG. 21 is a diagrammatic representation of one embodiment of a multiple packaged arrays;

FIG. 22 is a diagrammatic representation of another embodiment of multiple packaged arrays;

FIG. 23A is a diagrammatic representation of a cross-section of a model of a lens for determining sidewall shapes;

FIG. 23B is a diagrammatic representation of an embodiment of a portion of a sidewall of a lens;

FIG. 23C is a diagrammatic representation illustrating that the facets for a sidewall can be defined using a computer program;

FIG. 23D is a diagrammatic representation of one embodiment of a lens with sidewalls shaped to cause TIR so that rays are reflected from the sidewalls to the exit surface;

FIG. 24 is a diagrammatic representation illustrating one embodiment of an exit plane;

FIG. 25 is a diagrammatic representation of one embodiment for estimating effective solid angle;

FIGS. 26A-26E are diagrammatic representations describing another embodiment for estimating effective solid angle;

FIG. 27 is a diagrammatic representation of an embodiment of an optical system;

FIG. 28 is a diagrammatic representation of another embodiment of an optical system;

FIG. 29 is a diagrammatic representation of another embodiment of a lens with phosphor;

FIG. 30 is a diagrammatic representation of yet another embodiment of a lens with phosphor;

FIG. 31 is a diagrammatic representation of one embodiment of a lens with phosphor; and

FIG. 32 is a diagrammatic representation of another embodiment of a lens with phosphor.

Embodiments and various features and advantageous details thereof are explained more fully with reference to the exemplary, and therefore non-limiting, examples illustrated in the accompanying drawings and detailed in the following description. Descriptions of known starting materials and processes may be omitted so as not to unnecessarily obscure the disclosure in detail. It should be understood, however, that the detailed description and the specific examples, while indicating the preferred embodiments, are given by way of illustration only and not by way of limitation. Various substitutions, modifications, additions and/or rearrangements within the spirit and/or scope of the underlying inventive concept will become apparent to those skilled in the art from this disclosure.

As used herein, the terms “comprises,” “comprising,” “includes,” “including,” “has,” “having” or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a process, product, article, or apparatus that comprises a list of elements is not necessarily limited only those elements but may include other elements not expressly listed or inherent to such process, product, article, or apparatus. Further, unless expressly stated to the contrary, “or” refers to an inclusive or and not to an exclusive or. For example, a condition A or B is satisfied by any one of the following: A is true (or present) and B is false (or not present), A is false (or not present) and B is true (or present), and both A and B are true (or present).

Additionally, any examples or illustrations given herein are not to be regarded in any way as restrictions on, limits to, or express definitions of, any term or terms with which they are utilized. Instead these examples or illustrations are to be regarded as being described with respect to one particular embodiment and as illustrative only. Those of ordinary skill in the art will appreciate that any term or terms with which these examples or illustrations are utilized encompass other embodiments as well as implementations and adaptations thereof which may or may not be given therewith or elsewhere in the specification and all such embodiments are intended to be included within the scope of that term or terms. Language designating such non-limiting examples and illustrations includes, but is not limited to: “for example,” “for instance,” “e.g.,” “in one embodiment,” and the like.

Reference is now made in detail to the exemplary embodiments of the disclosure, examples of which are illustrated in the accompanying drawings. Wherever possible, like numerals will be used throughout the drawings to refer to like and corresponding parts (elements) of the various drawings.

Embodiments described herein provide an optical system that creates highly uniform light distributions with selected color and/or color temperatures. Optical systems can be created using LEDs with lenses, shaped substrate LEDs, or shaped emitter layer LEDs with overlapping illumination patterns. Preferably each lens, shaped substrate or shaped emitter layer in the optical system is configured to conserve radiance and emit light with a high percentage of light in beam. Furthermore, each lens, shaped substrate or shaped emitter layer in an optical system is preferably shaped to create a uniform light distribution pattern.

FIG. 1A is a diagrammatic representation of an embodiment of an optical unit 15. Optical unit 15 can be a shaped substrate LED (as described in U.S. Pat. No. 7,789,531), an LED with shaped emitter layers as described in U.S. Pat. No. 7,829,358 or an LED and separate optical device combination as described in U.S. Pat. No. 7,772,604, each of which is fully incorporated by reference herein. Optical units can use lenses, shaped substrates or shaped emitter layers that conserve radiance or some percentage of radiance (e.g., greater than 50%, greater than 60%, greater than 70% to greater than 90% and approaching 100%). Additionally, optical units can be selected to achieve a high percent of light in beam (e.g., greater than 50%, greater than 60%, greater than 70% to greeter than 90% and approaching 100%) in a range of beam angles (for example, but not limited to full beam angles of 10-120 degrees (full width half maximum)). Because the individual optical devices provide a high percent of light in beam, an array of such optical units can also provide a high percentage of light in beam (e.g., greater than 50%, greater than 60%, greater than 70% to greater than 90% and approaching 100%). In addition, the optical units can be selected so that the optical units provide a uniform illumination pattern.

For purposes of discussion, optical unit 15 can include LED 20 (or an array of LEDs) and lens 25. Light from LED 20 optionally can be down converted by phosphor. If phosphor is used, the phosphor coating may be disposed on lens 25, LED 20 or otherwise disposed between LED 20 and the entrance to the body of lens 25. Lens 25 can be constructed to emit light in a uniform distribution pattern with either a sharp or soft cut off angle, as discussed below, with a high extraction efficiency and percentage of light in beam.

FIG. 1B is a diagrammatic representation of the illumination pattern of the unit 15 with a target surface 27 being a substantial distance away compared to the size of the unit 15 (in this example approximately 20:1). At a distance that is 20 times the size of the lens exit face the lighted field dimension will be 20*2*tan(30)=23 times as wide as the exit face. At this distance the pattern is uniform with well-defined edges.

FIG. 2 illustrates an array 30 of optical units 15. When one unit is placed next to another, it will have the same field size as the first unit (assuming similar geometries), but the field will be displaced only by the width of the lens exit face (assuming the lenses are closely packed so that there is little or no distance between adjacent lenses). The effect of this is that the optical units 15 emit an overall light profile having an i) overlapping illuminated area 35 illuminated with a mix of chromaticities providing an area of very uniform color and ii) a less uniform border area 36.

As the distance between the illuminated surface and array 30 grows, the illuminated area grows while the width of the border area 36 stays the same size. At far field, border area 36 becomes unnoticeable. Multiple arrays can be arranged such the border areas overlap to create more uniformity in the border areas, leading to a larger illuminated area having a uniform profile. Due to the square or rectangular shape of the illuminated area created by the array 30, multiple arrays can be spaced at desired distances to provide targeted uniform lighting over large areas.

The color of the overlap area 35 can depend on the color emitted by each lens which, in turn, can depend on the LED and phosphor selected. According to one embodiment, each LED can be a blue or ultraviolet LED used in conjunction with a pure phosphor or blend of phosphors so that the corresponding lens emits a desired color light. In other embodiments, some or all of the LEDs selected may emit a desired color light without using a phosphor coating. Thus, for example, some of the LEDs in the array can be blue or ultraviolet (or other color) LEDs used in conjunction with phosphors while other LEDs can be red (or other color) LEDs used without phosphors. Examples of phosphors that can be used include, but are not limited to: garnets doped with Ce3+ (such as Y3Al5O12: Ce, or YAG), silicates doped with Eu2+ (such as (MgSrBa)2SiO4: Eu, or BOS), nitrides doped with Eu2+ (such as (MgCaSr)AlSiN3: Eu), and other suitable materials known in the art. These phosphors can be used alone (e.g. YAG or BOS), or in blends as necessary to achieve desired color coordinates and/or color rendering index (CRI) values.

One advantage of using an array of units having blue or ultraviolet chips used in conjunction with a pure phosphor or a phosphor blend is that averaging of chromaticity variation between individual units (due to random differences in phosphor loading or chip wavelength) takes place, and the lamp to lamp color variation is thereby reduced versus that for individual LED components. The yield to the ANSI color bins is consequentially increased.

A further advantage of using an array of units having blue or ultraviolet chips used in conjunction with pure phosphors of different colors (in addition to averaging to color coordinates) is the removal of interactions between phosphors. Such interactions are caused by significant overlapping between the emission spectrum of one phosphor and the excitation spectrum of another, and can lead to reduction in CRI value, efficiency, or both. For example, an array consisting of 8 elements coated with YAG and another 8 elements coated with a red nitride phosphor in a checkerboard pattern has a substantially higher CRI value than a similar array using a blend of the same two phosphors on each lens.

Yet another advantage of using an array of units is the ability to provide “hybrid” solutions with narrow beam angles in which some lenses are coated with phosphor and others are not. For example, one embodiment of an array can use blue or ultraviolet LEDs in conjunction with green-yellow phosphor (such as YAG or BOS) on one set of units, and red LEDs, without phosphor, in another set of units. It has been shown that such a hybrid solution can produce a highly efficient warm white light source with a high CRI (e.g., 90 at 3000K).

According to one embodiment, the phosphors can be selected and LEDs controlled so that the combined output in overlap area 35 has a desired spectral power distribution and color coordinates to achieve desired x and y values in the 1931 CIE chromaticity diagram. In particular, the color coordinates of an array can lie on or near the Planckian locus, thereby producing various shades of white light (e.g. “cool” white, “neutral” white, or “warm” white). Desirable regions around the Planckian locus in the chromaticity diagram are defined by the ANSI C78.377-2008 chromaticity standard, over a range of correlated color temperature (CCT) values. However, embodiments described herein may be used to achieve any color coordinates.

By using units emitting various colors (with or without phosphor added), one can achieve dynamic color control of the light (e.g. by using an RGB approach), or a dynamic white light changing from warm to neutral to cool (and back if necessary) over the course of the day, as a few examples. The use of optical units constructed to emit uniform light in a controlled beam angle allows for excellent color mixing (with no diffuser-associated losses) and superior beam angle control at the same time.

Arrays that provide color mixing can be used for industrial, commercial/office, residential, governmental, health care, hospitability or other applications. By way of example, but not limitation, arrays of optical units can be used for the following applications: aquaponic lighting, horticulture lighting, aquaculture lighting, aquarium lighting, food processing lighting, poultry/livestock lighting, automotive lighting, avionics lighting, railway lighting, runway lighting, parking lot lighting, parking garage lighting, street lighting, ship lighting, dock and pier lighting, correctional facility lighting, hazardous location lighting, sports lighting, site lighting, theme park/amusement park lighting, casino lighting, stage/theatrical lighting, museum lighting, emergency lighting, security lighting, vandal proof lighting, landscape lighting, accent lighting, downlights, tail lighting, backlighting, under cabinet lighting, area lighting, billboard lighting, signage lighting, medical/dental lighting, cold storage lighting, architectural façade lighting, fountain lighting, in-grade lighting, retail lighting and other lighting applications. Arrays of optical units can be used in a number of lighting devices including, but not limited to light bulbs, replacement lamps, channel lights, reading lights, flashlights, spot lights, instrumentation lighting, microscope lights, machine vision lights, electronic display lights and other devices.

FIGS. 3A-C illustrate arrangements of color optical systems to produce white light units. Each white light unit contains color light sources that emit light of a selected color so that the blended light produces white light. In FIGS. 3A-C, for example, the white light units include 2 green sources, one red source and one blue source. White light units may share overlapping color sources (e.g., in FIG. 3C, one green source and the blue source are shared between white light units). Each color source of FIGS. 3A-C may be a single optical unit emitting a selected color or may be an array acting together to produce a desired color light. In the latter case, arrays can be constructed that emit a selected color of light and arrays emitting different colors can be combined to form a white light unit. While the example of a white light unit is used, arrays can used to produce other colors of light.

FIG. 4 is a diagrammatic representation of one embodiment of a system 50 comprising a display controller 55 and an array 60 of units 15. System 50 can comprise a circuit board 70 to which the LEDs of units 15 are electrically connected. According to one embodiment, the units 15 can be arranged to form white light units. Controller 55 can include an interface 75 that is electrically connected to the LEDs to send control signals to the LEDs. A processor 80 can execute a set of instructions 85 stored in a computer readable memory 90 to generate control signals to the LEDs. The intensity of the LEDs can be individually controlled to alter the color produced by white light units. In another embodiment, arrays of units may be controlled. Thus for example, controller 55 may control an array of multiple units to adjust the intensity of the array as a whole, rather than controlling individual units in the array. Controller 55 can be implemented as a separate control module, a microprocessor and related hardware, an ASIC and related hardware, or other hardware and/or software suitable to control LEDs. The instructions can be implemented as firmware, software or hardware or according to any other suitable architecture.

The following discussion provides various examples of embodiments of optical systems that can be used to provide color mixing. However, other optical systems may also be used. FIGS. 5-8 are diagrammatic representations of optical units comprising a lens 105 separated by a gap from an LED 110. The LED can be a lateral LED as shown in FIGS. 5 and 6, a flip-chip LED as illustrated in FIG. 7, a vertical LED as illustrated in FIG. 8 or any other suitable type of LED or light source. LED 110 can include a substrate 115 of any suitable LED substrate material including sapphire, silicon carbide, diamond, molded glass or other substrate material. Additionally, LED 110 can have non-substrate layers 120 that can include one or more layers or regions of doping, buffer layers or other layers. Non-substrate layers 120 can include a light emitting region (or active region), typically a compound semiconductor such as InGaN or AlInGaP or AlGaN. LED 110 can be rectangular (including square), hexagonal, circular or have another geometric or irregular shape.

LED 110 is mounted to a submount 125. Submount 125 can include the electrical substrate and/or any other electrical, thermal or support layers to which the LED is bonded. According to one embodiment, submount 125 that can be made of a material with high thermal conductivity to spread and conduct the heat produced by LED 110. Any suitable submount known or developed in the art can be used. LED 110 is disposed in an LED cavity 130 defined by housing 135. Housing 135 can be a portion of a larger housing, a layer(s) of material mounted on submount 125 or other material positioned around LED 110 that forms a cavity in cooperation with submount 125 or other layer. For example, according to one embodiment, material 135 can be a layer of molded plastic mounted to submount 125.

LED cavity 130, according to one embodiment, can have straight sidewalls that are parallel to the sides of the LED (i.e., vertical from the perspective of FIG. 5). In other embodiments, the walls of LED cavity 130 can be curved (e.g., parabolic, multi-parabolic or other curved shape), tapered or otherwise shaped to better direct light upwards. LED cavity 130 can be filled with air, molded silicone, silicone mixed with phosphor particles, molded plastic, or other encapsulant. Using a material having a higher index of refraction than LED 110 can prevent light from being trapped in LED 110 due to total internal reflection (“TIR”) in LED 110, thereby allowing more light to escape into LED cavity 130.

A reflector 140 (see FIG. 6) disposed around LED 110 can reflect light toward lens 105. In some embodiments, reflector 140 can be a discrete component. By way of example, but not limitation, the reflector can be Teflon, Teflon paper, diffuse reflective plastic, silver coated plastic, white paper, TiO2 coated material or other reflective material. In another embodiment, reflector 140 can be formed through selection of material 135 or the encapsulant. For example, material 135 can be a white plastic material such that the walls inherently form a diffuse white reflector. In another embodiment, reflector 140 can be formed by the surface tension of an encapsulant disposed in LED cavity 130.

In some cases, an LED may only leak light out the sides of some portions of the LED. In the embodiment of FIG. 8, for example, the substrate 115 may include non-transparent sides such that LED 110 does not emit light from the sides of its substrate 115. Consequently, the optical system can be constructed so reflector 140 only surrounds the side portions of LED 110 through which light is emitted.

Lens 105 can include an entrance face 150 to receive light into the lens body 107 of lens 105. According to one embodiment, entrance face 150 can be parallel to the primary emitting plane of LED 110 (e.g., a plane parallel to face 117 in FIG. 6). In other embodiments, the entrance face can have another orientation (e.g. perpendicular) relative to the primary emitting plane of the LED. It should be noted, however, lens 105 can include additional layers, such as buffer or protective layers, that light may traverse prior to entering entrance face 150 of lens body 107.

A phosphor layer 145 can be disposed on lens 105 between the entrance face of lens body 107 and LED 110. The phosphor layer can be disposed directly on the entrance face 150 or on a buffer layer between phosphor layer 145 and entrance face 150. The phosphor in phosphor layer 145 absorbs the higher energy, short wavelength light waves, and re-emits lower energy, longer wavelength light. Light emitted by phosphor layer 145 can enter the lens body 107 through entrance face 150.

According to one embodiment, phosphor layer 145 can include a layer of phosphor particles in a binding material, such as silicone, coated on the entrance face 150 of lens body 107. The phosphor particles can include any suitably sized phosphor particles including, but not limited to, nano-phosphor particles, quantum dots, or smaller or larger particles and can include a single color or multiple colors of phosphor particles. In other embodiments, the phosphor layer 145 can be separated from the entrance face 150 of lens body 107 by one or more buffer layers. There may also be additional layers of material such that, for example, phosphor layer 145 is sandwiched between entrance face 150 and one or more additional layers of material. Materials and adhesives can be selected with indexes of refraction such that losses do not occur or are minimized at layer boundaries. The phosphor can be disposed using any technique known or developed in the art including, but not limited to, silk screening, stencil printing pad printing, syringe dispense or jetting.

The color of light emitted by a unit 100 can be selected based on LED 110 and the phosphor particles in phosphor layer 145. For example, LED 110 can be a UV LED and phosphor layer 145 can include phosphors that down convert UV light to red, green, blue, yellow or other color light. In another example, LED 110 can be a blue LED and phosphor layer 145 can down convert the blue light into a desired color. Reflector 140 can be selected to reflect both the color light emitted by the LED 110 and the down converted light from phosphor layer 145.

Lens 105 is positioned so that phosphor layer 145 is maintained a distance from LED 110. The position of lens 105 can be maintained by using a housing, coupling lens 105 to encapsulant in LED cavity 130 or otherwise positioning lens 105 relative LED 110. If lens 105 is adhered to an encapsulant, an adhesive with an index of refraction equal to or greater than that of the encapsulant can be used to prevent TIR at the encapsulant/adhesive boundary.

Lens 105 can act as a light guide to guide light from entrance face 150 to exit face 155. Examples of a lens 105 that can utilize TIR at shaped sidewalls 157 to guide light to exit face 155 are described below and in U.S. Pat. No. 7,772,604 which is hereby fully incorporated by reference herein. Lens 105 can be a separate optical device designed so that all the light can be extracted out exit face 155 (not accounting for Fresnel losses) in the smallest package design possible through selection of exit face area 155, distance between the exit face 155 and entrance face 150 and the design of sidewalls 157. Other embodiments can be shaped to have different sizes or achieve different extraction efficiencies. For example, according to one embodiment, lens 105 can be configured such that at least 70% of the light entering lens body 107 at entrance 150 exits exit face 155. Additionally, the lens 105 can be selected to provide a uniform light distribution and to emit light in a desired half-angle.

In operation, LED 110 produces light that can exit LED 110 from surface 117 (see FIG. 6) and sides 119 (see FIG. 6). Reflector 140 acts as a redirecting lens to redirect light escaping sides 119 to entrance surface 150 of lens body 107. When the light is incident on phosphor layer 145, phosphor layer 145 down converts the light and emits light into lens body 107 and back into LED cavity 130. Reflector 140 can again direct the light in LED cavity 130 to entrance face 150. Lens body 107 guides light entering entrance face 150 from phosphor layer 145 to exit face 155. If lens body 107 provides light in a uniform distribution in a desired half-angle, lenses are not required to shape the beam. Consequently, color conversion and beam shaping can be achieved with a single lens.

One consideration is that phosphor can heat up to a temperature of approximately 150 degrees Celsius during use. Consequently, lens body 107 can be constructed of a material that can withstand continuous use at this temperature. In another embodiment, a buffer layer of silicon or other material capable of withstanding high temperatures can be introduced between the phosphor layer 145 and entrance face 150 of lens 105. While thicker or thinner buffers can be used, one embodiment can include a layer of silicon that is 100 to 200 microns thick. This can allow, for example, a broader range of polycarbonates to be used for lens body 107.

FIGS. 9 and 10 are diagrammatic representations of embodiments of lens 105 having body 107, a buffer 160 layer and phosphor layer 145. The buffer layer can be a suitable, high temperature material such as silicon or other material that can withstand the operating temperatures of the selected phosphor layer 145. In one embodiment, buffer 160 can be adhered to or otherwise coupled to the bottom of lens body 107 or, as shown in FIG. 9, all or a portion of buffer 160 can rest in a pocket formed at the entrance face of lens 105. The phosphor layer can be disposed on lens 105 as a coating on buffer layer 160. FIGS. 9 and 10 also illustrate an adhesive layer 165 to adhere lens 105 to an encapsulant in LED cavity 130 (FIGS. 5-8).

Embodiments described herein provide an advantage over traditional systems of using phosphors with LEDs because the phosphor is removed a distance from the LED. Because the phosphor is located at the entrance of the lens, there is high coupling efficiency. Additionally, self-heating of the phosphor due to Stokes shift can be reduced because heat can be dissipated through the material of lens 140, housing 135 and/or submount 125. Higher phosphor conversion efficiency can also be achieved due to low flux density at the entrance face 150 of lens 105.

The distance between phosphor 145 and LED 110 can be optimized to provide an optimal balance between thermal considerations and effective phosphor package efficiencies. While any suitable gap size can be used as needed or desired, one embodiment of an optical system has a gap of 100-200 microns between surface 117 (see FIG. 6) and phosphor layer 145.

Additionally, embodiments described herein provide for flexible optical system architectures. Because the phosphor coated lens can be separate from the LED chip, it can be used in conjunction with various types of optical devices, including conventional light emitting devices. Furthermore, LEDs 110 can be used with a variety of different lens types depending on need.

According to one embodiment, an array of lenses 105 can be formed where each lens 105 is selected to emit light in a desired half-angle having a uniform distribution in near and far fields. The lenses 105 can be tightly packed, that is spaced so that there are no perceivable gaps between emitted light for adjacent lenses 105. Because the emitted light from each lens 105 is uniform and in a desired half-angle, the light output of the array will be in the desired half-angle with uniform near and far field distributions, but covering a larger area than the light emitted by a single lens with no dark spots or ghosting. This provides a very practical benefit for display or lighting manufacturers because additional optics are no longer required to get light from an LED array using phosphors into a desired angle.

FIG. 11 is a diagrammatic representation of one embodiment of a packaged array 200. In the embodiment of FIG. 11, packaged array 200 comprises submount 125, main housing 205 and cover 210. Submount 125 provides mechanical support and electrical connections for LEDs. Embodiments of submount materials include, but are not limited to: Low Temperature Cofire Ceramic (LTCC) with thermal vias, High Temperature Cofire Ceramic (HTCC) with thermal vias, Beryllium Oxide (BeO) ceramic, Alumina ceramic, Silicon, Aluminum Nitride (AlN), Metal (Cu, Al, etc.), and Flex circuit.

Main housing 205 can be formed of suitable materials including, but not limited to, plastic, thermoplastic, and other types of polymeric materials. Composite materials or other engineered materials may also be used. In some embodiments, main housing 205 may be made by a plastic injection molding manufacturing process. Various molding processes and other types of manufacturing processes may also be used. In some embodiments, main housing 205 may be opaque. In some embodiments, main housing 205 may be transparent or semi-transparent. Main housing 205 can be bonded or otherwise coupled to a layer of material 215 to complete the housing about the LEDs and lenses. In other embodiments, the housing can be formed of any number of layers or pieces of suitable material that will not unacceptably deform during operation due to heating and can protect the LEDs and lens for expected contact or shock during use, transportation or manufacture.

In the embodiment of FIG. 11, packaged array 200 is a 4×4 array and each group of 4 lenses shares a cover 210. In other embodiments a single cover 210 can be used for all lenses or each lens can have its own cover 210. Cover 210, according to one embodiment, can have a sufficient thickness to prevent the lenses from becoming damaged during handling of packaged array 200.

FIG. 12 is a diagrammatic representation of a cross-sectional view of one embodiment of packaged array 200 illustrating main housing 205, lens 105, cover 210, LED 110, LED cavity 130, housing layer 215 and submount 125 (only one instance of each is indicated for clarity). In the embodiment of FIG. 12, cover 210 is integrated with lens 105 such that they form a single lens assembly. Cover 210 can be integrated with other lenses 105 so that a single lens assembly will have a cover portion and multiple lens portions. The body 107 of lens 105 and cover 210 can be made of a single piece of molded plastic, polycarbonate, PMMI or other material. In other embodiments, cover 210 can be coupled to lens 105 using an adhesive. Cover 210 also may simply be in contact with lens 105 or may be separated from lens 105 by a gap. In other embodiments, shape of lens body 107 can be selected to account for the transition into cover 210.

Cover 210 can be an optically transparent material, such as a plastic, glass, composite material, or other material and may include one or more layers. Additionally, cover 210 may include layers of material to perform photon conversion (e.g., an additional phosphor layer), filtering or other functions with respect to light exiting lens 105.

Main housing 205 forms a lens cavity 220 sized to fit lens 105. The sidewalls 225 of lens cavity 220 can be curved to match or approximate the sidewall shapes of lens 105 so that the size of lens cavity 220 is smaller proximate to the corresponding LED cavity 130 and larger distal from LED cavity 130. In other embodiments, the sidewalls 225 can be vertically straight (from the perspective of FIG. 12) or can be tapered. Sidewalls 225 can include reflective coatings or other coatings to reflect any light leaking from the sides of lens 105 to the exit of cover 205. In another embodiment, main housing 205 can be formed of white plastic or other color material so that sidewalls 225 form reflectors.

According to one embodiment, lens cavity 220 can be sized so that there is a gap between the sidewalls of lens body 107 and sidewalls 225 of lens cavity 220 to preserve TIR in lens body 107. The size of the gap can be constant or can increase or decrease further from the base of lens cavity 220. The gap can be filled with air or other material. Preferably, the material has the same or lower index of refraction than body 107 of lens 105. In other embodiments, sidewalls 225 can contact sidewalls of lens body 107 and act as a reflector for light in lens body 107.

Main housing 205 can include a shoulder 230 on which ledge 235 of cover 210 rests. An adhesive, mechanical fasteners or other suitable fastening mechanism can be used to couple cover 210 to main housing 205. In other embodiments a secondary structure, such as a clamping structure, can maintain cover 210 against main housing 205.

According to one embodiment, by coupling cover 210 to main housing 205, lens 105 is held in a desired position in lens cavity 220. In this case, lens 105 may not require additional attachment to housing 205. In other embodiments, a portion of lens 105 can be adhered to or otherwise coupled to a shoulder 240 at the base of lens cavity 220 or other portion(s) of lens 105 can be coupled to main housing 205.

Main housing 205 defines a portion or all of LED cavity 130 in cooperation with submount 125 and housing layer 215. Although LED cavity 130 is shown with vertical sidewalls, LED cavity 130 can have tapered, curved or otherwise shaped sidewalls to act as a redirector lens. The opening to LED cavity 130 can have the same shape as and be rotationally aligned with LED 110 or can have another shape or alignment.

A phosphor layer can be disposed proximate to entrance face 150 such that light exiting LED cavity 130 will be incident on the phosphor layer. The phosphor layer down converts light before the light enters lens body 107. The down converted light is guided through lens 105 and exits cover 210. Entrance face 150 of lens body 107 can be the same shape as and be rotationally aligned with the opening to LED cavity 130 or have another shape or alignment.

FIG. 13 is a diagrammatic representation of a cutaway view of one embodiment of an LED cavity 130. Submount 125 forms the base of the cavity, while the sidewalls are formed by main housing 205 and layer 215. According to one embodiment, a portion of LED 110 can extend into the portion of LED cavity 130 defined by main housing 205. For example, the non-substrate layers 120 including the active region of the LED may extend into this opening or, in a flip chip design, the substrate 115 may extend into this portion. LED cavity 130 can become larger closer to submount 125 to accommodate electrical connections or otherwise provide space around LED 110. While portions of submount 125, layer 215 and main housing 205 are shown, the packaged array 200 can include additional layers that define cavity 130.

FIG. 14 is a diagrammatic representation of packaged array 200 with main housing 205 removed. It can be noted in FIG. 14 that the entrance face 150 to lens body 107 is maintained a distance away from the corresponding LED 110. Consequently, any phosphors disposed on or near the entrance face will also be separated from LED 110.

FIG. 15 is a diagrammatic representation of one embodiment of a portion of packaged array 200 having layer 215 and submount 125 forming separate LED cavities 130 for each LED 110. While, in the embodiment of FIG. 15, LED cavity 130 has straight vertical sidewalls, LED cavity 130 can have curved, tapered or otherwise shaped sidewalls and can act as a reflector. The area of LED cavity 130 defined by layer 215 can be larger than that defined by main housing 205 to accommodate electrical connections or to otherwise provide space around LED 110. In other embodiments, the cavity can have a uniform size or become wider as it approaches lens 105. Cavity 130 can be entirely or partially filled with an encapsulant, air, silicone or other filler material. Layer 215 can be adhered or otherwise coupled to submount 125.

FIG. 16 is a diagrammatic representation of one embodiment of LEDs 110 mounted on submount 125. Submount 125, as illustrated in FIG. 16, can provide support for LEDs 110 and provide electrical connections 250. Electrical connections can be provided using suitable metals or other conductors. While a particular pattern and type of electrical connection are illustrated, any suitable electrical connections to LED 110 and submount 125 can be provided.

FIG. 17 is a diagrammatic representation of one embodiment of main housing 205 defining lens cavities 220 sized to fit lenses 105. Lens cavity 220 extends from an opening 260 to LED cavity 130 to a second opening 265. The sizes of the openings can have, according to one embodiment, a ratio that is the same as the size ratio of the exit face to entrance face of the lens. In another embodiment, opening 260 may be approximately the same size as the entrance face to the lens 105 while opening 265 is larger than the exit face. Sidewalls 225 can be curved, tapered, vertical or have another selected shape. A shoulder 230 provides a surface to which cover 210 can be coupled.

In the embodiment of FIG. 17, main housing 205 forms a 4×4 array. However, main housing 205 can accommodate larger or smaller arrays or a single optical system. Additionally, main housing 205 can be shaped to accommodate circular, hexagonal or other shaped lenses 105 in a tightly packed array. Although only one array is shown, multiple arrays can be arranged on the same substrate.

FIG. 18 is a diagrammatic representation of another embodiment of a packaged array with the housing removed similar to that of FIG. 14, but including layer 255. FIG. 19 is a diagrammatic representation of one embodiment of a portion of a packaged array 200 with lenses 105 and cover 210 removed illustrating that layer 255 can define a portion of and provide an opening to LED cavity 130.

A portion of the cavity that houses LED 110 can be formed by layer 255 rather than the main housing 205. In this case, housing layers 255 and 215 can define the lens cavities 130, while layers 215 and 255 define the LED cavities. Layers 215 and 255 can include any suitable materials including plastics or other materials. Layer 255 can be inset from layer 215 to form a ledge to which main housing 205 can be bonded. The use of layers 215 and 255 can ease manufacturability by providing a mechanism by which to align main housing 205.

FIG. 20 is a diagrammatic representation of a lens assembly 275 comprising a set of lenses 105 and a lens cover 210. According to one embodiment, the lens bodies 107 and cover can be a unitary piece of material.

Each lens 105 can be a phosphor coated lens selected to emit a desired color light. If more than one phosphor lens is used in a system, multiple types of phosphors may be used to achieve the desired color temperature and CRI. For instance, three yellow phosphor lenses and one red phosphor lens may be used in conjunction with a blue pump to attain warm white light. As another example, in the 2×2 array of lenses shown, each lens can emit red, green or blue light. The light from lenses 105 can be combined to form white light. Since each of the four phosphor lens can emit to the same far field distribution, the colors will undergo superposition and will not bleed or create ring-like effects.

In yet another embodiment, each assembly 275 can emit a different color of light. In a 4×4 array as shown in FIG. 17, for example, four lens assemblies 275 can be used. One lens assembly 275 can emit blue light, one assembly 275 can emit red light and two assemblies 275 can emit green light such that the array as whole acts as a white light source.

According to one embodiment, lighting systems can be created with multiple packaged arrays. FIGS. 21 and 22 for example, illustrate multiple packaged arrays 200 mounted to a common submount 125. The number and layout of the packaged arrays 200 can be selected as needed or desired. The packaged arrays can be spaced so that the illumination patterns of the packaged arrays 200 overlap.

In the various embodiments described above, lens 105 can have a lens body 107 with an entrance face 150, an exit face 155 and sidewalls 157 (see FIG. 5). According to one embodiment, lens 105 can be constructed with the assumption that the LED or phosphor layer 145 will emit uniformly into entrance face 150. To conserve radiance so that all the light entering lens body 107 through entrance face 150 can be extracted through exit face 155, the area of exit face 155 is selected according to the etendue equation such that:

n 1 2 A 1 Ω 1 n 2 2 Ω 2 = A 2 [ EQN . 1 ]
Where Ω1=effective solid angle whereby light enters through entrance face 150; Ω2=effective solid angle whereby light leaves exit face 155; A1=area of entrance face 150; A2=area of exit face 155; n1=refractive index of material of lens body 107; and n2=refractive index of substance external to the exit face 155 of lens body 107 (e.g. air or other medium). In another embodiment, it can be assumed that A1 is the size of the phosphor layer and that the phosphor layer acts as a uniform emitter over that area.

There are various models for determining effective solid angle including those described in U.S. patent application Ser. No. 11/906,194 entitled “LED System and Method” to Duong, et al. filed Oct. 1, 2007, issued as U.S. Pat. No. 7,789,531 on Sep. 7, 2010, U.S. patent application Ser. No. 11/906,219 entitled “LED System and Method” to Duong, et al., filed Oct. 1, 2007, issued as U.S. Pat. No. 8,087,960 on Jan. 31, 2012, and U.S. patent application Ser. No. 11/649,018 entitled “Separate Optical Device for Directing Light from an LED,” filed Jan. 3, 2007, issued as U.S. Pat. No. 7,772,604 on Aug. 10, 2010, each of which is hereby fully incorporated by reference herein. Preferably, the area of exit face 155 is within 30% (plus or minus) of the minimum area necessary to conserve radiance.

The distance between exit face 155 and entrance face 150 can be selected so that all rays having a straight transmission path from entrance face 150 to exit face 155 are incident on exit face 155 at less than or equal to the critical angle at exit face 155 to prevent TIR at exit face 155. According to one embodiment, the minimum distance can be selected based on a limiting ray. The limiting ray is a ray that travels the longest straight line distance from entrance face 150 to exit face 155. For square or rectangular faces 150 and 155, the limiting ray will be a ray that travels from a corner of entrance face 150 to the opposite corner of exit face 155. Preferably, the distance between the entrance face 155 and exit face 155 is within 30% (plus or minus) of this minimum distance, though smaller distances can be used.

In addition, the sidewalls 157 can be shaped. Broadly speaking, the sidewall shapes are determined so that any ray incident on a sidewall is reflected to exit face 155 and is incident on exit face 155 at the critical angle or less (i.e., so that there is no loss due to internal reflection at exit face 155). While, in one embodiment, the sidewalls are shaped so that all rays that encounter the inner surface of the sidewalls experience total internal reflection to exit face 155 and are incident on exit face 155 at the critical angle or less, other sidewall shapes that allow some loss can be used.

FIG. 23A is a diagrammatic representation of a cross-section of a model of lens 305 for determining sidewall shapes. Sidewall shapes can be determined using computer-aided design. A model of the sidewall can be created in a computer-aided design package and simulations run to determine an appropriate sidewall shape.

According to one embodiment, each sidewall can be divided into n facets with each facet being a planar section. For example, model sidewall 370 is made of fifteen planar facets 372a-372o rather than a continuous curve. The variables of each facet can be iteratively adjusted and the resulting distribution profiles analyzed until a satisfactory profile is achieved as described below. While the example of fifteen facets is used, each sidewall can be divided into any number of facets, including twenty or more facets.

Each facet can be analyzed with respect to reflecting a certain subset of rays within a lens. This area of interest can be defined as an “angular subtense.” The angular subtense for a facet may be defined in terms of the angles of rays emanating from a predefined point. Preferably, the point selected is one that will give rays with the highest angles of incidence on the facet because such rays are the least likely to experience TIR at the facet. In a lens with a square shaped entrance area, for example, this will be a point on the opposite edge of the entrance.

According to one embodiment, for a selected A1, A2, and height, the maximum of angle 374 of any ray that will be incident on a given sidewall (e.g., sidewall 370) without being previously reflected by another sidewall can be determined. In this example, ray 376 emanating from point 378 establishes the maximum angle 374 for sidewall 370. If the maximum of angle 374 is 48 degrees and there are 15 facets for sidewall 370, each facet (assuming an even distribution of angular subtenses) will correspond to a 3.2 degree band of angle 374 (e.g., a first facet will be the area on which rays emanating from point 378 with an angle 17 of 0-3.2 degrees are incident, the second facet will be the area on which rays emanating 374 from point 378 with an angle 95 of 3.2-6.4 degrees are incident, and so on).

For each facet, the exit angle, facet size, tilt angle, or other parameter of the facet can be set so that all rays incident on the facet experience TIR and are reflected to exit surface 355 such that they are incident on exit surface 355 with an angle of incidence of less than or equal to the critical angle. Preferably, the sidewalls are also shaped so that a ray viewed in a cross-sectional view only hits a side wall once. However, there may be additional reflection from a sidewall out of plane of the section. For a full 3D analysis, a ray that strikes a first sidewall near a corner, may then bounce over to a second side wall, adjacent to the first, and from there to the exit face. A curve fit or other numerical analysis may be performed to create a curved sidewall shape that best fits the desired facets.

To optimize the variables for each facet, a simulated detector plane 380 can be established. Detector plane 380 can include x number of detectors to independently record incident power. A simulation of light passing through the lens 305 may be performed and the intensity and irradiance distributions as received by detector plane 380 analyzed. If the intensity and irradiance distributions are not satisfactory for a particular application, the angles and angular subtenses of the facets can be adjusted, a new curved surface generated and the simulation re-performed until a satisfactory intensity profile, exitance profile or other light output profile is reached. Additional detector planes can be analyzed to ensure that both near field and far field patterns are satisfactory. Alternatively, the simulation(s) can be performed using the facets rather than curved surfaces and the surface curves determined after a desired light output profile is reached. In yet another embodiment, the sidewalls can remain faceted and no curve be generated.

According to another embodiment, the sidewall shape can be selected based on multiple parabolas with each planer facet representing a linear approximation of a portion of a parabola. For example, FIG. 23B is a diagrammatic representation of a portion of a modeled lens 305. In FIG. 23B, a hypothetical ray 384 is depicted that emanates from the focus 386 of a parabola 388 and intersects sidewall 370 such that it is reflected off sidewall 370 due to TIR and traverses the lens 305 to intersect exit plane 355 at an exit angle 390 that is less than the critical angle and exits lens 305 into air or other medium. As can be seen from FIG. 23B, at the transition from the lens 305 to air, ray 384 bends as described by Snell's law. Since the tangent point of the sidewall is determined from a parabola and because the ray incident and reflected off the sidewall is in the same medium, the ray will be parallel to the optical axis of the parabola. Thus, light is projected with a half-angle 392. Angular subtenses 396 defining the shape of sidewall 370 may be adjusted so that hypothetical ray 384 reflects off sidewall 370 such that ray 384 traverses exit face 355 with a desired exit angle 390 or projects light with a desired half angle 392.

In one embodiment, when fabricating a sidewall or calculating the angular subtense of a sidewall, finer subtenses may be used towards the base of the sidewall (i.e. nearer the phosphor layer) because the effects of the subtense are greater or more acute upon reflection near the base, and thus finer subtenses allow for a sidewall with better TIR properties, whereas further from the base, where the effects of the subtenses are less, the subtenses may be coarser. Thus, facets of a sidewall may be numerically greater towards the base of a lens body 107. In one embodiment, a sidewall may have 110 or more facets, with finer facets at the base of the sidewall, wherein the facets approximate one or more subtenses.

A facet can be a linear approximation of a portion of a parabola 388. The parameters of parabola 388 can be adjusted until the portion achieves the desired goal of all rays incident on the portion reflecting to exit face 355 such that the rays have an exit angle 390 of less than the critical angle. Each facet can be formed from a parabola having different parameters. Thus, a facet for one angular subtense may be based on a parabola while another facet is based on another parabola. A 110-facet sidewall, for example, may be based on 110 different parabolas.

FIG. 23C depicts a spreadsheet 500 that can be utilized to design a sidewall shape as shown in graph 510 through the specification of angular subtenses. Projected half angle column 550 contains a plurality of angles that correspond to projected half angle 450 of FIG. 23B. Exit angle columns 540a (in radians) and 540b (in degrees) contain a plurality of exit angles corresponding to exit angle 392 of FIG. 23B. More particularly, all or a subset of the angles in column 540a may be angles that are less than the critical angle such that light rays intersecting the exit face at those angles traverse the exit face, exiting the shaped device. Columns 540a and 540b may be utilized to develop parabola focus column 560, containing a plurality of foci defining different parabolas. Angular subtense column 565 contains a plurality of angles (in radians) that define the limits of an angular subtense that can be used in conjunction with parabola focus column 560 to define the shape of a sidewall such that a ray reflects off the sidewall to exit the exit face at less than the critical angle. Using the values contained in parabola focus column 560 and angular subtense column 565, theta column 570 and radius column 575 can be developed wherein corresponding values in columns 570 and 575 correspond to points on a desired parabola for the angular subtense. In turn, theta column 570 and radius column 575 can be utilized to develop Cartesian coordinates for points on a sidewall (e.g. coordinate transformation columns 577) that approximate the parabola for the angular subtense.

For example, a user can specify the size of the entrance face of the shaped device (in this case marked LED size) and material index. The size can correspond to the size of the entrance face or emitting size of the phosphor layer. Using a hypothetical example of a size of 1, and an index of refraction of 1.77, a row in screen 500 can be completed as follows. The user can specify an exit angle in air (assuming air is the medium in which the lens will operate) in column 550. In the example of the first row, the user has selected 55.3792 degrees. The exit angle in the lens can be calculated as sin(55.3792/180*π)1.77 or 0.4649323 radians, column 540a. Column 540b can be calculated as a sin(0.4649323)/π*180=27.2058407. The focus of the parabola can be calculated as ½*(1+cos(π/2−27.2058407/180*π)=0.732466. Angular subtense column 565 can be calculated based on the number in the next column (representing the relative size of a particular facet) as (90−27.7058047)/110=3.114708. Theta column 570 can be calculated using a selected number of facets (in this example 110). For example, in the first row theta is calculated as (90 27.7058407)+3.114708*110=124.5883. The radius of the parabola (column 575) for the first facet can be calculated as 2*0.732466/(1+cos(124.5883/180*π)). The contents of coordinate transformation columns 577 can be calculated as follows for the first row: x=−3.3885*cos(124.5883/180*π)=1.923573; y=−3.3885*sin(124.5883/180*π)=2.789594, X=1.923573*cos(27.7058407/180*π)+2.789594*sin(27.7058407/180*π); Y=2.789594*cos(27.7058407/180*π)−1.923573*sin(27.7058407/180*π)−1(size)/2=1.075452 and Y′=−Y. The X, Y coordinates can then be used as data point inputs for a shape fitting chart in Excel. For example graph 510 is based on the data points in the X and Y columns (with the Y column values used as x-axis coordinates and the X column values used as y-axis coordinates in graph 510). In addition to the X and Y values a starting value can be set (e.g., 0.5 and 0). The shape from graph 510 can be entered into an optical design package and simulations run. If a simulation is unsatisfactory, the user can adjust the values until a satisfactory profile is achieved.

When a satisfactory efficiency and intensity profile are achieved, a separate optical device can be formed having the specified parameters. An example of such a lens body 107 is shown in FIG. 23D which provides a diagrammatic representation of one embodiment of lens body 107 with sidewalls shaped to cause TIR so that rays are reflected from the sidewalls to the exit surface. The shape of each sidewall, in this embodiment, is a superposition of multiple contoured surfaces as defined by the various facets. While a curve fit is performed for ease of manufacturability, other embodiments can retain faceted sidewalls.

In the above example, it is assumed that the exit plane of light for purposes of shaping a lens is the exit face of the lens. However, as shown in the embodiment of FIG. 24, the exit plane of the shaped lens 105 may be the transition from shaped portion into another portion such as cover 210. While light will exit the lens assembly through the cover 210, the transition 400 between shaped lens body 107 and cover 210 can serve as the “exit face” for determining the shape of lens 105 as described above. If cover 210 has the same index of refraction as lens body 107, then the critical angle at the used in shaping lens 105 will be the same as if transition 400 were exposed to the outside medium because if light traverses transition 400 at less than or equal to the critical angle, it will also be incident on surface 404 at less than or equal to the critical angle. If the index of refraction of cover 210 is lower (or any adhesives or other layers between cover 210 and lens body 107), the critical angle at the exit face will be the critical angle based on the lower index of refraction.

The various boundary conditions, particularly the area of exit surface 155, can be determined for the separate optical device so that brightness can be conserved. The minimum area of exit surface 155 can be determined from EQN. 1 above, which relies on various effective solid angles. Typically, the effective solid angle of light is determined based on equations derived from sources that radiate as Lambertian emitters, but that are treated as points because the distances of interest are much greater than the size of the source. The observed Radiant Intensity (flux/steradian) of a Lambertian source varies with the angle to the normal of the source by the cosine of that angle. This occurs because although the radiance (flux/steradian/m2) remains the same in all directions, the effective area of the source decreases to zero as the observed angle increases to 90 degrees. Integration of this effect over a full hemisphere results in a projected solid angle value equal to π steradians.

Turning to FIG. 25, assume a sphere 630 of given radius (R) surrounds point source 632 (in this example, point source 632 approximates a Lambertian source at a significant distance). The projected area of a hemisphere of the sphere is πR2 and the projected area of the full sphere is 2πR2. This model can be used to design lenses because the phosphors can be modeled as a Lambertian emitter such that from any point on a hypothetical hemisphere centered over the interface, a given point on the interface will have the same radiance. The area A3 can be calculated as the flat, circular surface (e.g., surface 636) that is subtended by the beam solid angle of interest using a radius of the circle 634 (Rc) that is the distance from the normal ray to the intersection of the spherical surface. For a given half angle 637 of θ of the beam, Rc is the product of R (the radius of the sphere) and the sine of the angle θ, such that
Rc=R*Sin(θ)  [EQN. 2]
The area equals:
A3=πRc2=π(R*Sin(θ))2  [EQN. 3A]

The area A3 is the projected area of the solid angle as it intersects the sphere. The area A3 is divided by the projected area of the hemisphere (Ah=πR2) and the quotient is multiplied by the projected solid angle of the full hemisphere (equal to π) to obtain the projected solid angle Ω, such that:

Ω = π { projected area of solid angle } / ( projected are of hemisphere ) [ EQN . 3 B ] Ω = ( π ) * [ { π ( R * Sin ( θ ) ) 2 } / ( π R 2 ) ] = π * Sin 2 ( θ ) [ EQN . 4 ] [ EQN . 3 C ]

For entrance face 150 of FIG. 5, for example, θ is 90 degrees, leading to a projected solid angle of π*Sin2(90), and for the desired half angle of 30 degrees, the projected solid angle is π*Sin2(30). Using these values for Ω1 and Ω2 for EQN. 1, A2 can be determined for any half angle.

In the above example, the solid angle is determined using equations derived from a Lambertian source modeled as a point source. These equations do not consider the fact that light may enter a lens body 107 through an interface that may be square, rectangular, circular, oval or otherwise shaped. While the above-described method can give a good estimate of the solid angle, which can be later adjusted if necessary based on empirical or computer simulation testing, other methods of determining the effective solid angle can be used.

FIGS. 26A-26E describe another method for determining the effective solid angle for a lens. FIG. 26A is a diagrammatic representation of one embodiment of an entrance face 750 and an exit face 755 of a lens 760 and a hypothetical target plane 756 onto which light is projected. FIG. 26A illustrates examples for a position of an effective source origin 752, central normal 753 and effective output origin 754. For purposes of further discussion, it is assumed that the center of interface 750 is at 0,0,0 in a Cartesian coordinate system. Target plane 756 represents the parameters of the resulting pattern (e.g., size and half angle used by other optics). According to one embodiment, the half angle at the diagonal (shown as α1 in FIG. 26B) is the starting point. For example, if the desired light at target plane 756 has a maximum half angle of 30 degrees, α1 for a square- or rectangular-faced separate optical device is 30 degrees. The half-angle within the separate optical device (labeled β1 and also shown in FIG. 26C) can then be determined according to:
n2 Sin(α1)=n1 Sin(β1)  [EQN. 5]
where n1 is the IOR of the lens 760;

For example, if the desired half-angle α1 is 30 degrees, and a lens having an IOR of 1.5 is projecting into air having an IOR of 1, then β1=19.47 degrees. A similar calculation can be performed for a ray projecting from a point on the long and short sides of entrance surface 150. For example, as shown in FIGS. 26B and 24C, α2 and β2 can be determined for a ray traveling from the center of one edge on entrance surface 450 to the center of the opposite edge of exit surface 755. (The critical angle is the same at 19.47, but β1 is not the same as β2. β2 is determined by the geometry of the sides and the height to the optical device.)

Using the angles calculated, the location of an effective point source 757 can be determined. For a square entrance face 450, of length l1, the effective point source will be located X=0, Y=0 and

Z eps = l 1 2 * tan ( β 1 ) [ EQN . 6 ]

Where Zeps is the distance the effective point source is displaced from the emitting surface of the LED.

The X, Y and Z distances from the effective point source 757 to points F1 and F2 can be calculated assuming F1 intersects a sphere of unity radius according to:
XF1=cos(ψ1)sin(β1)  [EQN. 7]
YF1=sin(ψ1)sin(β1)  [EQN. 8]
ZF1=cos(β1)  [EQN. 9]
XF2=cos(ψ2)  [EQN. 10]
YF2=sin(β2)  [EQN. 11]
ZF2=cos(β2)  [EQN. 12]
where ψ1 is the angle of the diagonal ray in the X-Y plane (45 degrees for a square) and where ψ2=90 degrees for a ray projecting from the middle of a side parallel to the X axis as shown in FIG. 26C. A similar methodology based on the geometries previously calculated can be used to determine other points (e.g., for example, the location of points T1 and T2 can be determined based on the location of points F1 and F2 and the desired half angle of light at target plane 756.)

FIG. 26D illustrates the diagonal rays and one ray from the short side projected onto a sphere 759 for exit face 755 and sphere 761 for target plane 756. For exit face 755, the projection of the intersection of the edge rays at the sphere 759 onto the plane of the exit face 755, forms elliptical segments. Likewise, the projection of the diffracted exit rays at the edge of the target face intersect the sphere 761. FIG. 26E, for example, points out the circular intersection 763 of the rays lying in the plane formed by the edge 764 of target face 756 intersecting sphere 761, and the projection 762 of that intersection onto the target plane 756. By calculating the area of each of the elliptical segments surrounding the square of the target face, and adding that to the area of the target face we find the total projected area of the target face, the effective solid angle can be determined for the target plane using EQN. 3B. Similarly, by using sphere 159 and the elliptical segments formed thereon by rays, the effective solid angle for the optical device can be determined. For example, the total projected area is determined as described above and inserted as “projected area of desired solid angle” in equation 3B.

As one illustrative example, using the above method for a half-angle of 30 degrees with a square LED and output face yields an effective solid angle of 0.552 steradians to the target in air. By contrast, the use of the traditional circular projected area with a 30 degree half angle would yield an effective solid angle of 0.785 steradians. When these values are then used in EQUATION 1, for given IORs and flux, the traditional (circular) calculation yields a required exit area that is undersized by about 30%. If one were to design a system using this approach, the applicable physics (conservation of radiance) would reduce the light output by 30% over the optimum design. Conversely, using the corrected effective solid angle described above calculates an exit face area that will produce 42% more light output than is achievable with the circular calculation.

Although particular methods of determining the effective solid angle for a separate optical device are described above, any method known or developed in the art can be used. Alternatively, the minimum surface area to conserve brightness can be determined empirically. Moreover, while the minimum surface area calculations above assume 100% of the emitting entrance face of the separate optical device is receiving light, the phosphor layer may be disposed over only a part of the entrance surface such that a smaller entrance surface area is used. The calculations of the minimum area of the exit plane can be adjusted to account of the actual area receiving light. That is, the actual area of the phosphor layer can used as A1.

The lens body 107 can be optimized for use with a phosphor layer 145 as a uniform emitter at the entrance face using modeling as described above. Lenses according to embodiments described herein can project light into a desired cone angle of 10-60 degrees with a theoretical efficiency of up to 96% in the lens body (meaning that 96% of the light received from the phosphors is emitted in the desired half-angles with 4% Fresnel loss). The efficiency can be 100% without Fresnel losses.

Embodiments of lenses can be shaped to achieve optimal efficiency in a small package size. In other embodiments, lenses can be shaped to achieve lower efficiencies, while still offering advantages over traditional systems. For example, in one embodiment, a lens can be shaped with an exit face that is at least 70% of the size necessary to conserve radiance for light entering the entrance face for a selected half angle of light emitted from the exit plane. The sidewalls can have a shape so that at least a majority of the light having a straight transmission path from the entrance face to the exit plane are incident on the exit plane at less than or equal to the critical angle. Even at only 60% or 70% efficiency, such an embodiment provides greater efficiency than many other technologies, while also producing uniform or near uniform intensity distributions (or other controlled distribution) at both near and far fields.

Lenses 105 can be constructed to emit light in a uniform distribution pattern with either a sharp or soft cut off (i.e., transition). Using an example of a lens emitting light with a 30 degree half angle, in one embodiment the lens can be shaped so that the uniform light profile extends through the entire 30 degrees and cuts off sharply. In another embodiment, lens can be shaped to produce a profile that is uniform in the 105 degree half angle but tapers off between 105 and 30 degrees. In one such embodiment, the size of the exit face can be selected to conserve radiance for the 30 degree half angle and the sidewalls shaped to create a uniform distribution profile in the 105 degree half angle. In some cases the height of lens 105 can be made shorter to allow some light to escape the sidewalls into the 30 degree half angle. By way of example, but not limitation, the lens geometries can be selected to emit 90% of the light in a uniform profile in the 30 degree half angle and emit the other 10% in the remaining area. Lenses that produce a light profile having softer edges rather than a sharp cut off can be manufactured with a height that is 30% of the minimum height discussed above and still achieve greater than 70% extraction efficiencies.

Lenses 105 can also be shaped to project a percentage of light into a selected beam angle while allowing other light to escape the sidewalls or fall outside of the selected angle. For example, lenses can be constructed such that greater than 50%, greater than 60%, greater than 70% to greater than 90% and approaching 100% of the light emitted by the lens falls within the full beam angle.

While the above embodiments discuss lenses that are separated from the LED by a gap, lenses can also be coupled to the LED without a gap. FIG. 27 is a diagrammatic representation of one embodiment of an optical system 900 including a lens 105 and an LED 110. While a single LED 110 is illustrated, multiple LEDs can be used with a single lens 105. Lens 105 can be a separate optical device shaped to emit a uniform distribution of light in a desired half angle with a desired percentage of light in beam.

Lens 105 can be coupled to LED 110 using a friction fit, optical cement or other coupling mechanism, whether mechanical, chemical, or other. Preferably, in the embodiment of FIG. 27, lens 105 is formed of a single, molded piece of dielectric, optically transmitting material with a single Index of Refraction (“IOR”) “n”, such as optically transparent silicone or acrylic, though other materials can be used. Furthermore, the IOR of lens 105 is preferably within 110% of the IOR of the substrate of LED 110 (and ideally, the IOR of separate lens 105 is equal to or greater than IOR of the substrate).

FIG. 28 is a diagrammatic representation of one embodiment of adding phosphor to an optical system. According to one embodiment, as illustrated in FIG. 28, an attachment device 902 or packaging can be used to secure lens 105 to submount 903, a circuit board or other structure. LED 110 or the entrance face of lens 105 can be coated with phosphor particles 904 between LED 110 and lens 105. A passage 906 can be used to introduce phosphor layer 904 and optical adhesive between lens 105 and LED 110. In another embodiment, lens 105 does not have passage 906 and phosphor layer 904 can be applied prior to coupling separate lens 105 to LED 110. According to one embodiment, phosphor layer 904 can include an optical bonding material loaded with phosphor particles. FIG. 28 also illustrates that lens 105 can surround LED 110 on the sides.

While a lens 105 that emits light in a uniform distribution in a desired half angle provides advantages for light blending, other embodiments of lenses can be used with phosphors. FIG. 29, for example, is a diagrammatic representation of one embodiment of a system in which a solid dome lens 280 is used. In the embodiment of FIG. 29, LED 110 is disposed in an LED cavity 130 having tapered sidewalls that act as a reflector 140. A layer of phosphor 145 covers the entrance face of the body 282 of dome lens 280. In an array, each LED can be provided with a separate cavity and dome lens 280. In another embodiment an array of LEDs may be placed in each cavity under a lens. Various embodiments of dome lenses can be used including dome lenses that greater in size than the cavity.

FIG. 30 is a diagrammatic representation of another embodiment of an optical system. In the embodiment of FIG. 30, encapsulant in the LED cavity 130 around LED 110 forms a convex portion 285. A lens 105 having a phosphor coating 145 can be adhered to convex portion 285 or to a housing or another structure. The optical system can be assembled such that there is no gap between lens 105 and convex portion 285. By way of example, but not limitation, lens 105 can include a concave entrance face. In another embodiment, an intermediate layer with a concave entrance face can be used. In an array, each LED can be provided with a separate cavity and dome lens 280.

One of ordinary skill in the art would understand that phosphor can be disposed on a lens in a variety of manners. As discussed in conjunction with several embodiments above, phosphor can be applied as a coating to an entrance face or buffer layer. FIG. 31 is a diagrammatic representation of another embodiment. In the embodiment of FIG. 31, lens 805 includes a pocket 810 at the entrance face 815 to lens body 807. Phosphor particles 820 can be packed in the pocket and held in place with a binding material or with another layer 825 of material. Material 825 is preferably an optically transparent material that can withstand the temperatures of phosphor 820. FIG. 32 illustrates yet another embodiment of a lens 830 in which a layer of phosphor 835 is sandwiched between a buffer layer 840 and another layer of suitable material 845. The stack of layers can be coupled to a lens body 850. The layers of material can include glass, polycarbonate, silicone or other layers.

While this disclosure describes particular embodiments, it should be understood that the embodiments are illustrative and that the scope of the invention is not limited to these embodiments. Many variations, modifications, additions and improvements to the embodiments described above are possible. For example, the various ranges and dimensions provided are provided by way of example and LEDs and lenses may be operable within other ranges using other dimensions. It is contemplated that these variations, modifications, additions and improvements fall within the scope of the claims.

Winberg, Paul N., Duong, Dung T., Johnson, Randall E., Radkov, Emil, Ko, Hyunchul

Patent Priority Assignee Title
10193018, Dec 29 2016 Intel Corporation Compact low power head-mounted display with light emitting diodes that exhibit a desired beam angle
10527234, Jan 11 2017 SIGNIFY HOLDING B V Lighting system incorporating chip scale package light emitting diodes
9331255, Dec 16 2009 OSRAM Opto Semiconductors GmbH Housing that includes reflector part and housing material formed with plastic material
9574743, Jan 05 2006 Illumitex, Inc. Separate optical device for directing light from an LED
Patent Priority Assignee Title
1670837,
3981023, Sep 16 1974 Northern Electric Company Limited Integral lens light emitting diode
3988633, Jan 30 1975 DURO-TEST CORPORATION, INC Fluorescent lamp with envelope grooves
4125890, Dec 10 1976 Corning Glass Works Parabolic reflector including filament locating means
4180755, Dec 10 1976 Corning Glass Works Sealed beam lamp including filament locating means
4239369, Nov 20 1978 GTE Products Corporation Camera and reflector having offset optical and mechanical axes
4304479, Jul 28 1980 Polaroid Corporation Photographic lighting apparatus
4388633, Sep 29 1980 Hughes Electronics Corporation Monolithic transistor coupled electroluminescent diode
4439910, Sep 29 1980 Hughes Electronics Corporation Process for fabrication of monolithic transistor coupled electroluminescent diode
4486364, Dec 04 1981 Stanley Electric Company, Ltd. Method and apparatus for molding a synthetic resin lens for a light emitting diode
4501637, Jun 12 1981 Motorola, Inc. LED having self-aligned lens
4716507, May 12 1986 The United States of America as represented by the Secretary of the Army Optical collimator target illumination
4728999, Jun 25 1980 Pitney Bowes Inc. Light emitting diode assembly
4740259, Sep 13 1985 Siemens Aktiengesellschaft Method of making a light-emitting-diode (led) with spherical lens
4799136, May 29 1987 JJI LIGHTING GROUP, INC Lighting fixture having concave shaped reflector and improved asymmetric light reflection system
4841344, Sep 13 1985 Siemens Atiengesellschaft Light-emitting-diode (LED) with spherical lens
4966862, Aug 28 1989 Cree, Inc Method of production of light emitting diodes
5036339, Sep 05 1989 Eastman Kodak Company LED array into floating focusing structure for differential expansion
5087949, Jun 27 1989 Philips Lumileds Lighting Company LLC Light-emitting diode with diagonal faces
5114513, Oct 27 1988 OMRON TATEISI ELECTRONICS CO Optical device and manufacturing method thereof
5126929, Jan 09 1991 R & D Molded Products, Inc.; R & D MOLDED PRODUCTS, INC , A CORP OF CA LED holder with lens
5151718, Dec 31 1990 Texas Instruments Incorporated; TEXAS INSTRUMENTS INCORPORATED, A CORP OF DE System and method for solid state illumination for DMD devices
5174649, Jul 17 1991 MANUFACTURERS & TRADERS TRUST COMPANY LED lamp including refractive lens element
5218216, Jan 31 1987 Toyoda Gosei Co., Ltd.; NAGOYA UNIVERSITY Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
5233204, Jan 10 1992 Philips Lumileds Lighting Company LLC Light-emitting diode with a thick transparent layer
5251117, Feb 21 1991 NEC Corporation Structure of a diffusing lens for a light emitting diode
5272108, Feb 27 1991 Kabushiki Kaisha Toyota Chuo Kenkyusho; Toyoda Gosei Co., Ltd. Method of manufacturing gallium nitride semiconductor light-emitting device
5278433, Feb 28 1990 TOYODA GOSEI CO , LTD Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
5281830, Oct 27 1990 Toyoda Gosei Co., Ltd.; NAGOYA UNIVERSITY; Research Development Corporation of Japan Light-emitting semiconductor device using gallium nitride group compound
5315490, Oct 13 1989 Light fittings
5369289, Oct 30 1991 TOYODA GOSEI CO , LTD ; Kabushiki Kaisha Toyota Chuo Kenkyusho Gallium nitride-based compound semiconductor light-emitting device and method for making the same
5523591, Jan 25 1995 Eastman Kodak Company Assembly of led array and lens with engineered light output profile and method for making the assembly
5528720, Mar 23 1992 3M Innovative Properties Company Tapered multilayer luminaire devices
5563422, Apr 28 1993 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device and method of producing the same
5578156, Jan 07 1994 Sumitomo Electric Industries, Ltd. Method of mounting a lens on a light emitting diode
5587593, Apr 20 1994 TOYODA GOSEI CO , LTD ; Research Development Corporation of Japan Light-emitting semiconductor device using group III nitrogen compound
5620557, Jun 26 1995 TOYODA GOSEI CO , LTD ; AKASAKI, ISAMU; AMANO, HIROSHI Sapphireless group III nitride semiconductor and method for making same
5652438, Jul 20 1994 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
5654831, Jan 04 1995 HE HOLDINGS, INC , A DELAWARE CORP ; Raytheon Company Refractive ellipsoid optical surface without spherical aberration
5667297, Aug 29 1994 U.S. Philips Corporation Electric reflector lamp
5700713, Mar 22 1994 Toyoda Gosei Co., Ltd. Light emitting semiconductor device using group III nitride compound and method of producing the same
5739554, May 08 1995 Cree, Inc Double heterojunction light emitting diode with gallium nitride active layer
5780867, Mar 07 1996 Sandia Corporation Broadband light-emitting diode
5813753, May 27 1997 Philips Electronics North America Corp UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
5839424, Apr 16 1996 Applied Materials Switzerland SA Process for the orientation of several single crystals disposed side by side on a cutting support for their simultaneous cutting in a cutting machine and device for practicing this process
5846844, Nov 29 1993 Toyoda Gosei Co., Ltd.; Isamu Akasaki; Hiroshi Amano; Kazumasa Hiramatsu Method for producing group III nitride compound semiconductor substrates using ZnO release layers
5862167, Jul 19 1994 Toyoda Gosei Co., Ltd.; Research Development Corporation of Japan; Isamu, Akasaki; Hiroshi, Amano Light-emitting semiconductor device using gallium nitride compound
5912477, Oct 07 1994 Cree, Inc High efficiency light emitting diodes
5945689, Mar 17 1995 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
5953469, Oct 29 1996 Life Technologies Corporation Optical device utilizing optical waveguides and mechanical light-switches
5959401, May 21 1996 TOYODA GOSEI CO , LTD Light-emitting semiconductor device using group III nitride compound
5998925, Jul 29 1996 Nichia Corporation Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material
6005722, Sep 04 1998 Hewlett-Packard Company Optical display system including a light valve
6008539, Jun 16 1995 TOYODA GOSEI CO , LTD Electrodes for p-type group III nitride compound semiconductors
6023076, Aug 22 1996 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light emitting device having a current path between electrodes
6066861, May 20 1998 Osram GmbH Wavelength-converting casting composition and its use
6078064, May 04 1998 Epistar Co. Indium gallium nitride light emitting diode
6093941, Sep 09 1993 UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE SECRETARY OF THE NAVY CHIEF OF NAVAL RESEARCH, OFFICE OF COUNSEL Photonic silicon on a transparent substrate
6118908, Sep 09 1994 Gemfire Corporation Integrated optical device with phosphor in substrate pit
6133589, Jun 08 1999 Lumileds LLC AlGaInN-based LED having thick epitaxial layer for improved light extraction
6144536, Feb 13 1997 Honeywell International Inc. Illumination system with light recycling to enhance brightness
6169294, Sep 08 1998 Epistar Co. Inverted light emitting diode
6177761, Jul 17 1996 SEOUL SEMICONDUCTOR COMPANY, LTD LED with light extractor
6185051, Jun 23 1999 Western Digital Technologies, INC High numerical aperture optical focusing device for use in data storage systems
6194742, Jun 05 1998 Lumileds LLC Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
6201262, Oct 07 1997 Cree, Inc Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
6221683, May 27 1997 OSRAM OPTO SEMICONDUCTOR GMBH & CO OHG Method for producing a light-emitting component
6222207, May 24 1999 Lumileds LLC Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
6229160, Jun 03 1997 Lumileds LLC Light extraction from a semiconductor light-emitting device via chip shaping
6229782, Jul 06 1998 Western Digital Technologies, INC High numerical aperture optical focusing device for use in data storage systems
6257737, May 20 1999 PHILIPS ELECTRONICS N0RTH AMERICA CORP Low-profile luminaire having a reflector for mixing light from a multi-color linear array of LEDs
6258618, Sep 11 1998 Lumileds LLC Light emitting device having a finely-patterned reflective contact
6271622, Apr 28 1997 OSRAM SYLVANIA Inc Vehicle lamps with improved filament and filament support configurations
6274924, Nov 05 1998 Lumileds LLC Surface mountable LED package
6287947, Jun 08 1999 Lumileds LLC Method of forming transparent contacts to a p-type GaN layer
6307218, Nov 20 1998 Lumileds LLC Electrode structures for light emitting devices
6310364, Aug 03 1998 TOYODA GOSEI CO , LTD Light-emitting apparatus
6323063, Jun 03 1997 Philips Lumileds Lighting Company LLC Forming LED having angled sides for increased side light extraction
6331450, Dec 22 1998 TOYODA GOSEI CO , LTD Method of manufacturing semiconductor device using group III nitride compound
6335999, Mar 23 1992 3M Innovative Properties Company Multilayer luminaire device
6337493, Apr 21 1999 Nichia Corporation Nitride semiconductor device
6350041, Dec 03 1999 Cree, Inc High output radial dispersing lamp using a solid state light source
6351069, Feb 18 1999 Lumileds LLC Red-deficiency-compensating phosphor LED
6356700, Jun 08 1998 Efficient light engine systems, components and methods of manufacture
6361192, Oct 25 1999 BARR-ONE, LLC Lens system for enhancing LED light output
6364487, Jan 29 1999 AVAGO TECHNOLOGIES ECBU IP SINGAPORE PTE LTD Solid state based illumination source for a projection display
6377535, Jul 06 1998 Western Digital Technologies, INC High numerical aperture optical focusing device having a conical incident facet and a parabolic reflector for use in data storage systems
6410942, Dec 03 1999 Cree, Inc Enhanced light extraction through the use of micro-LED arrays
6417019, Apr 04 2001 Lumileds LLC Phosphor converted light emitting diode
6443594, Mar 31 2000 SIGNIFY HOLDING B V One-piece lens arrays for collimating and focusing light and led light generators using same
6445011, Jan 29 1999 TOYODA GOSEI CO , LTD ; KOHA CO , LTD Light-emitting diode
6452214, Mar 31 1999 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting device having a light emission output of high light intensity
6459100, Sep 16 1998 Cree, Inc Vertical geometry ingan LED
6478453, Jan 07 2000 SIGNIFY HOLDING B V Luminaire
6486499, Dec 22 1999 Lumileds LLC III-nitride light-emitting device with increased light generating capability
6489636, Mar 29 2001 Lumileds LLC Indium gallium nitride smoothing structures for III-nitride devices
6501102, Sep 27 1999 LumiLeds Lighting, U.S., LLC Light emitting diode (LED) device that produces white light by performing phosphor conversion on all of the primary radiation emitted by the light emitting structure of the LED device
6502956, Mar 25 1999 LEOTEK ELECTRONICS CORP Light emitting diode lamp with individual LED lenses
6504171, Jan 24 2000 LumiLeds Lighting, U.S., LLC Chirped multi-well active region LED
6504179, May 29 2000 Patent-Treuhand-Gesellschaft fur elektrische Gluhlampen mbh; Osram Opto Semiconductors GmbH & Co. OHG Led-based white-emitting illumination unit
6514782, Dec 22 1999 Lumileds LLC Method of making a III-nitride light-emitting device with increased light generating capability
6515313, Dec 02 1999 Cree, Inc High efficiency light emitters with reduced polarization-induced charges
6526082, Jun 02 2000 Lumileds LLC P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction
6526201, Oct 12 2000 Delphi Technologies, Inc. Light transport coupler assembly
6527411, Aug 01 2000 VARROC LIGHTING SYSTEMS S R O Collimating lamp
6534797, Nov 03 2000 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
6541800, Feb 22 2001 Akron Brass Company High power LED
6547416, Dec 21 2000 SIGNIFY HOLDING B V Faceted multi-chip package to provide a beam of uniform white light from multiple monochrome LEDs
6547423, Dec 22 2000 SIGNIFY HOLDING B V LED collimation optics with improved performance and reduced size
6563142, Jul 11 2001 Lumileds LLC Reducing the variation of far-field radiation patterns of flipchip light emitting diodes
6570190, Jun 03 1997 Lumileds LLC LED having angled sides for increased side light extraction
6573537, Dec 22 1999 Lumileds LLC Highly reflective ohmic contacts to III-nitride flip-chip LEDs
6576488, Jun 11 2001 Lumileds LLC Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
6576932, Mar 01 2001 Lumileds LLC Increasing the brightness of III-nitride light emitting devices
6598998, May 04 2001 Lumileds LLC Side emitting light emitting device
6603243, Mar 06 2000 TELEDYNE LIGHTING AND DISPLAY PRODUCTS, INC LED light source with field-of-view-controlling optics
6603258, Apr 24 2000 Lumileds LLC Light emitting diode device that emits white light
6608330, Sep 21 1998 Nichia Corporation Light emitting device
6610598, Nov 14 2001 Solidlite Corporation Surface-mounted devices of light-emitting diodes with small lens
6620643, Aug 05 1999 Toyoda Gosei Co., Ltd. Light-emitting device using group III nitride compound semiconductor
6623142, Feb 15 2002 Delphi Technologies, Inc. Method and apparatus for correcting optical non-uniformities in a light emitting diode
6630689, May 09 2001 Lumileds LLC Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
6630691, Sep 27 1999 Lumileds LLC Light emitting diode device comprising a luminescent substrate that performs phosphor conversion
6630692, May 29 2001 Lumileds LLC III-Nitride light emitting devices with low driving voltage
6635503, Jan 28 2002 CREE LED, INC Cluster packaging of light emitting diodes
6635904, Mar 29 2001 Lumileds LLC Indium gallium nitride smoothing structures for III-nitride devices
6637921, Sep 28 2001 SUZHOU LEKIN SEMICONDUCTOR CO , LTD Replaceable LED bulb with interchangeable lens optic
6639733, Mar 16 2000 Light Prescriptions Innovators, LLC High efficiency non-imaging optics
6642618, Dec 21 2000 Lumileds LLC Light-emitting device and production thereof
6642652, Jun 11 2001 Lumileds LLC Phosphor-converted light emitting device
6649440, Jun 08 1999 Philips Lumileds Lighting Company LLC; Lumileds LLC Aluminum indium gallium nitride-based LED having thick epitaxial layer for improved light extraction
6649943, Jun 07 2001 TOYODA GOSEI CO , LTD ; TOYODA GOESI CO , LTD Group III nitride compound semiconductor light-emitting element
6649946, Nov 30 1999 OSRAM Opto Semiconductors GmbH Light source using a yellow-to-red-emitting phosphor
6650044, Oct 13 2000 Lumileds LLC Stenciling phosphor layers on light emitting diodes
6657236, Dec 03 1999 Cree, Inc Enhanced light extraction in LEDs through the use of internal and external optical elements
6657300, Jun 05 1998 Lumileds LLC Formation of ohmic contacts in III-nitride light emitting devices
6664560, Jun 15 2001 Cree, Inc Ultraviolet light emitting diode
6671452, Mar 23 1992 3M Innovative Properties Company Luminaire device
6679621, Jun 24 2002 Lumileds LLC Side emitting LED and lens
6680490, Jun 15 2001 Toyoda Gosei Co., Ltd.; Sanken Electric Co., Ltd. Light-emitting device
6680569, Feb 18 1999 Lumileds LLC Red-deficiency compensating phosphor light emitting device
6682207, Jan 29 1999 Lumileds LLC Green phosphor converted light emitting diode
6682331, Sep 20 2002 DOCUMENT SECURITY SYSTEMS, INC Molding apparatus for molding light emitting diode lamps
6683327, Nov 13 2001 Lumileds LLC Nucleation layer for improved light extraction from light emitting devices
6686691, Sep 27 1999 Lumileds LLC Tri-color, white light LED lamps
6696703, Sep 27 1999 Lumileds LLC Thin film phosphor-converted light emitting diode device
6711200, Sep 07 1999 California Institute of Technology Tuneable photonic crystal lasers and a method of fabricating the same
6717353, Oct 14 2002 Lumileds LLC Phosphor converted light emitting device
6717355, Aug 28 2000 TOYODA GOSEI CO , LTD Light-emitting unit
6730939, Feb 15 2000 Osram GmbH Radiation emitting semiconductor device
6730940, Oct 29 2002 Lumileds LLC Enhanced brightness light emitting device spot emitter
6734467, Nov 03 1999 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH LED white light source with broadband excitation
6737681, Aug 22 2001 Nichia Corporation Light emitting device with fluorescent member excited by semiconductor light emitting element
6738175, Dec 13 1999 Nichia Corporation Light emitting device
6740906, Jul 23 2001 CREE LED, INC Light emitting diodes including modifications for submount bonding
6744071, Jan 28 2002 Nichia Corporation Nitride semiconductor element with a supporting substrate
6744077, Sep 27 2002 Lumileds LLC Selective filtering of wavelength-converted semiconductor light emitting devices
6746124, Feb 06 2001 OPTICS 1 INCORPORATED Flashlight producing uniform high brightness
6746295, Apr 22 1999 Osram GmbH Method of producing an LED light source with lens
6747298, Jul 23 2001 CREE LED, INC Collets for bonding of light emitting diodes having shaped substrates
6759803, Apr 22 1999 Osram GmbH LED light source with lens and corresponding production method
6764932, Oct 14 1999 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
6768136, Aug 14 2001 Osram GmbH Radiation emitting structural element
6768525, Dec 01 2000 Philips Lumileds Lighting Company LLC Color isolated backlight for an LCD
6774405, Mar 05 2001 Toyoda Gosei Co., Ltd.; Sanken Electric Co., Ltd. Light-emitting device
6777871, Mar 31 2000 ALLY BANK, AS COLLATERAL AGENT; ATLANTIC PARK STRATEGIC CAPITAL FUND, L P , AS COLLATERAL AGENT Organic electroluminescent devices with enhanced light extraction
6784027, Nov 30 2001 Osram Opto Semiconductor GmbH Light-emitting semiconductor component
6791103, Nov 20 1992 Nichia Corporation Light-emitting gallium nitride-based compound semiconductor device
6791116, Apr 30 2002 PANASONIC SEMICONDUCTOR SOLUTIONS CO , LTD Light emitting diode
6791119, Feb 01 2001 CREE LED, INC Light emitting diodes including modifications for light extraction
6794211, Dec 02 1998 SAMSUNG ELECTRONICS CO , LTD Light emitting diode and method of fabricating thereof
6794684, Feb 01 2001 CREE LED, INC Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
6794690, Sep 18 2001 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting element
6800500, Feb 05 1999 Lumileds LLC III-nitride light emitting devices fabricated by substrate removal
6800876, Jan 16 2001 CREE LED, INC Group III nitride LED with undoped cladding layer (5000.137)
6806571, Mar 27 2000 Toyoda Gosei Co., Ltd. III nitride compound semiconductor element an electrode forming method
6812053, Oct 14 1999 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
6812500, Jun 26 1996 Osram AG Light-radiating semiconductor component with a luminescence conversion element
6814470, May 08 2000 LIGHT TRANSFORMATION TECHNOLOGIES LLC Highly efficient LED lamp
6819505, Sep 08 2003 Synopsys, Inc Internally reflective ellipsoidal collector with projection lens
6819506, Sep 30 2003 Infinity Trading Co. Ltd. Optical lens system for projecting light in a lambertion pattern from a high power led light source
6821804, Dec 03 1999 CREELED, INC Enhanced light extraction in LEDs through the use of internal and external optical elements
6825501, Aug 29 1997 Cree, Inc Robust Group III light emitting diode for high reliability in standard packaging applications
6828596, Jun 13 2002 Lumileds LLC Contacting scheme for large and small area semiconductor light emitting flip chip devices
6828599, Oct 05 2000 SAMSUNG ELECTRONICS CO , LTD Semiconductor light-emitting diode
6831302, Apr 15 2003 LUMINUS DEVICES, INC Light emitting devices with improved extraction efficiency
6831305, Apr 23 2001 Toyoda Gosei Co., Ltd. Semiconductor light-emitting device
6833564, Nov 02 2001 Lumileds LLC Indium gallium nitride separate confinement heterostructure light emitting devices
6835957, Jul 30 2002 Lumileds LLC III-nitride light emitting device with p-type active layer
6838705, Mar 29 1999 Nichia Corporation Nitride semiconductor device
6841931, Apr 12 2001 PANASONIC SEMICONDUCTOR SOLUTIONS CO , LTD LED lamp
6844565, Feb 24 2000 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Semiconductor component for the emission of electromagnetic radiation and method for production thereof
6844903, Apr 04 2001 Philips Lumileds Lighting Company LLC Blue backlight and phosphor layer for a color LCD
6846101, Sep 28 2001 OSRAM SYLVANIA Inc Replaceable LED bulb with interchageable lens optic
6847057, Aug 01 2003 Lumileds LLC Semiconductor light emitting devices
6850002, Jul 28 2000 FREESLATE, INC Light emitting device for generating specific colored light, including white light
6853010, Sep 19 2002 CREE LED, INC Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
6870191, Jul 24 2001 Nichia Corporation Semiconductor light emitting device
6870311, Jun 07 2002 Lumileds LLC Light-emitting devices utilizing nanoparticles
6871982, Jan 24 2003 SNAPTRACK, INC High-density illumination system
6872986, Jul 04 2001 Nichia Corporation Nitride semiconductor device
6876008, Jul 31 2003 Lumileds LLC Mount for semiconductor light emitting device
6876009, Dec 09 2002 Nichia Corporation Nitride semiconductor device and a process of manufacturing the same
6877558, Oct 12 2001 Halliburton Energy Services, Inc. Apparatus and method for locating joints in coiled tubing operations
6878973, Aug 23 2001 Lumileds LLC Reduction of contamination of light emitting devices
6885033, Mar 10 2003 CREE LED, INC Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
6885036, Dec 01 1999 Cree, Inc Scalable LED with improved current spreading structures
6888997, Dec 05 2000 Eastman Kodak Company Waveguide device and optical transfer system for directing light to an image plane
6890085, Apr 12 2002 OPTOTRONIC GMBH LED module
6891199, Aug 11 2000 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Radiation-emitting semiconductor chip and light-emitting diode
6896381, Oct 11 2002 Light Engine Limited Compact folded-optics illumination lens
6897488, Nov 06 2000 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Radiation-emitting chip
6897490, Apr 26 2000 Osram AG Radiation emitting semiconductor component with luminescent conversion element
6900472, Dec 15 1997 Philips Lumileds Lighting Company LLC; Lumileds LLC Semiconductor light emitting device having a silver p-contact
6900474, Dec 20 2002 Lumileds LLC Light emitting devices with compact active regions
6903376, Dec 22 1999 Lumileds LLC Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
6906352, Jan 16 2001 Cree, Inc Group III nitride LED with undoped cladding layer and multiple quantum well
6911676, Jul 18 2002 SAMSUNG ELECTRONICS CO , LTD Semiconductor LED device and method for manufacturing the same
6916748, Dec 31 2001 Nanya Technology Corporation Method of forming emitter tips on a field emission display
6917059, Oct 31 2002 Toyoda Gosei Co., Ltd. III group nitride system compound semiconductor light emitting element
6921928, Aug 27 2002 Nichia Corporation Nitride semiconductor element
6924514, Feb 19 2002 Nichia Corporation Light-emitting device and process for producing thereof
6924596, Nov 01 2001 Nichia Corporation Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same
6925100, Jul 19 2002 Toyoda Gosei Co., Ltd. Communication device
6936859, May 13 1998 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
6936860, May 30 2001 EPISTAR CORPORATION Light emitting diode having an insulating substrate
6943128, Aug 24 2000 TOYODA GOSEI CO , LTD Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element
6943380, Dec 28 2000 TOYODA GOSEI CO , LTD ; Tridonic Optoelectronics GmbH; Litec GBR; Leuchstoffwerk Breitungen GmbH Light emitting device having phosphor of alkaline earth metal silicate
6943381, Jan 30 2004 Lumileds LLC III-nitride light-emitting devices with improved high-current efficiency
6943433, Mar 06 2002 Nichia Corporation Semiconductor device and manufacturing method for same
6946682, Aug 29 1997 Cree, Inc. Robust group III light emitting diode for high reliability in standard packaging applications
6946685, Aug 31 2000 Lumileds LLC Light emitting semiconductor method and device
6952024, Feb 13 2003 CREELED, INC Group III nitride LED with silicon carbide cladding layer
6953952, Sep 05 2002 Nichia Corporation Semiconductor device and an optical device using the semiconductor device
6955933, Jul 24 2001 Lumileds LLC Light emitting diodes with graded composition active regions
6956245, May 31 2002 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting element
6956247, May 26 2004 Lumileds LLC Semiconductor light emitting device including photonic band gap material and luminescent material
6958497, May 30 2001 CREE LED, INC Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
6960878, Jan 24 2001 Nichia Corporation Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor
6967116, Feb 14 2003 CREE LED, INC Light emitting device incorporating a luminescent material
6969946, Oct 29 2002 Lumileds LLC Enhanced brightness light emitting device spot emitter
6972438, Sep 30 2003 CREELED, INC Light emitting diode with porous SiC substrate and method for fabricating
6977396, Feb 19 2003 Lumileds LLC High-powered light emitting device with improved thermal properties
6987281, Feb 13 2003 CREELED, INC Group III nitride contact structures for light emitting devices
6987287, Jul 15 2002 EPISTAR CORPORATION Light emitting diode having an adhesive layer and a reflective layer
6987613, Mar 30 2001 Lumileds LLC Forming an optical element on the surface of a light emitting device for improved light extraction
6989555, Apr 21 2004 Lumileds LLC Strain-controlled III-nitride light emitting device
6992334, Dec 22 1999 Lumileds LLC Multi-layer highly reflective ohmic contacts for semiconductor devices
6993242, Mar 23 1992 3M Innovative Properties Company Luminaire device
6995032, Jul 19 2002 Cree, Inc Trench cut light emitting diodes and methods of fabricating same
6998771, Jul 23 1999 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Arrangement of luminescent materials, wavelength-converting casting compound and light source
7001058, May 16 2001 VISUS, LTD Ultra-thin backlight
7002291, May 29 2000 Patent-Treuhand-Gesellschaft fur elektrische Gluhlampen mbh; OSRAM Opto Semiconductors GmbH LED-based white-emitting illumination unit
7005679, May 01 2003 CREELED, INC Multiple component solid state white light
7005681, Aug 30 2001 OSRAM Opto Semiconductors GmbH Radiation-emitting semiconductor component and method for making same
7005684, Jun 06 2001 TOYODA GOSEI CO , LTD Group III nitride based semiconductor luminescent element
7009008, Aug 04 1999 AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LIMITED Transparent liquid resin material for SMT-enabled led-applications at higher temperatures and higher luminosities
7009199, Oct 22 2002 IDEAL Industries Lighting LLC Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
7009213, Jul 31 2003 Lumileds LLC Light emitting devices with improved light extraction efficiency
7009218, Feb 19 2003 Nichia Corporation Nitride semiconductor device
7012279, Oct 21 2003 AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LIMITED Photonic crystal light emitting device
7012281, Oct 30 2003 EPISTAR CORPORATION Light emitting diode device and manufacturing method
7015054, Dec 22 1999 Lumileds LLC Semiconductor light emitting device and method
7015513, Feb 20 2004 EPISTAR CORPORATION Organic adhesive light-emitting device with a vertical structure
7015516, Nov 16 2000 GELcore LLC Led packages having improved light extraction
7018915, Mar 27 2000 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for forming an electrode
7021797, May 13 2003 Light Engine Limited Optical device for repositioning and redistributing an LED's light
7026653, Jan 27 2004 Lumileds LLC Semiconductor light emitting devices including current spreading layers
7029935, Sep 09 2003 CREE LED, INC Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
7029939, Jun 18 2001 TOYODA GOSEI CO , LTD P-type semiconductor manufacturing method and semiconductor device
7030423, Nov 21 2002 EPISTAR CORPORATION Package structure for light emitting diode and method thereof
7037741, Mar 28 2003 EPISTAR CORPORATION Compound semiconductor optoelectronic device
7038246, Jul 25 2002 TOYODA GOSEI CO , LTD Light emitting apparatus
7038370, Feb 23 2004 Lumileds LLC Phosphor converted light emitting device
7040774, May 23 2003 Goldeneye, Inc. Illumination systems utilizing multiple wavelength light recycling
7042012, May 27 2002 TOYODA GOSEI CO , LTD Semiconductor light-emitting device
7042153, Feb 12 2002 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light emitting element
7045956, May 06 2002 Osram GmbH Light emitting diode with wavelength conversion
7053417, Sep 04 2000 SAMSUNG ELECTRONICS CO , LTD Semiconductor led device and producing method
7053419, Sep 12 2000 Lumileds LLC Light emitting diodes with improved light extraction efficiency
7063807, Mar 15 2001 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Phosphor for light sources and associated light source
7064353, May 26 2004 Lumileds LLC LED chip with integrated fast switching diode for ESD protection
7064355, Sep 12 2000 Lumileds LLC Light emitting diodes with improved light extraction efficiency
7064480, Jul 28 2000 Patent-Treuhand-Gesellschaft fur elektrische Gluhlampen mbh Illumination device with at least one led as the light source
7070300, Jun 04 2004 SIGNIFY NORTH AMERICA CORPORATION Remote wavelength conversion in an illumination device
7071494, Dec 11 2002 Lumileds LLC Light emitting device with enhanced optical scattering
7071495, Oct 31 2002 Toyoda Gosei Co., Ltd. III group nitride system compound semiconductor light emitting element and method of making same
7072096, Dec 14 2001 SNAPTRACK, INC Uniform illumination system
7074631, Apr 15 2003 LUMINUS DEVICES, INC Light emitting device methods
7075610, Sep 16 1997 ARMY, UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE; GOVERNMENT OF THE UNITED STATES SECRETARY OF THE ARMY DEPT OF THE ARMY - OFFICE OF THE SECRETARY Liquid crystal display device and light emitting structure with photonic band gap transparent electrode structures
7078254, Dec 06 2002 CREELED, INC LED package die having a small footprint
7078732, Jun 26 1996 Osram AG Light-radiating semiconductor component with a luminescence conversion element
7078738, Feb 12 2003 TOYODA GOSEI CO , LTD Light-emitting device
7080932, Jan 26 2004 SIGNIFY NORTH AMERICA CORPORATION LED with an optical system to increase luminance by recycling emitted light
7083993, Apr 15 2003 LUMINUS DEVICES, INC Methods of making multi-layer light emitting devices
7087738, Oct 24 1997 Genentech, Inc. Secreted and transmembrane polypeptides and nucleic acids encoding the same
7087931, Apr 13 2004 BIING-JAY LEE; EPISTAR CORPORATION High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof
7087936, Apr 30 2003 CREE LED, INC Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
7091656, Apr 20 2001 Nichia Corporation Light emitting device
7095765, Dec 26 2002 EPISTAR CORPORATION Light emitter with a voltage dependent resistor layer
7098588, Dec 30 1999 OSRAM Opto Semiconductors GmbH Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source
7105857, Jul 08 2002 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
7106090, Nov 19 1999 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Optical semiconductor device with multiple quantum well structure
7108386, May 12 2003 IDEAL Industries Lighting LLC High-brightness LED-phosphor coupling
7109521, Mar 18 2004 Cree, Inc.; ABB AB INCORPORATED Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
7109529, May 13 1998 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
7111964, Mar 14 2003 TOYODA GOSEI CO , LTD LED package
7112636, Dec 06 2002 Nichia Corporation Epoxy resin composition
7122839, Oct 29 2004 Lumileds LLC Semiconductor light emitting devices with graded composition light emitting layers
7132695, Oct 16 2002 EPISTAR CORPORATION Light emitting diode having a dual dopant contact layer
7132786, Jul 23 1999 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Luminescent array, wavelength-converting sealing material and light source
7138662, Sep 18 2002 Toyoda Gosei Co., Ltd. Light-emitting device
7153015, Dec 31 2001 INNOVATIONS IN OPTICS, INC Led white light optical system
7154121, Dec 23 2002 EPISTAR CORPORATION Light emitting device with a micro-reflection structure carrier
7154149, Jul 31 2003 EPISTAR CORPORATION EDS protection configuration and method for light emitting diodes
7157294, Jun 06 2001 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting element
7161187, Mar 28 2001 Toyoda Gosei Co., Ltd. Light emitting diode and manufacturing method thereof
7161301, Jan 30 2003 EPISTAR CORPORATION Nitride light-emitting device having an adhesive reflecting layer
7170097, Feb 14 2003 CREE LED, INC Inverted light emitting diode on conductive substrate
7183586, Nov 17 2004 Nichia Corporation Semiconductor element and manufacturing method for the same
7183632, Jul 29 1997 Osram GmbH Surface-mountable light-emitting diode structural element
7183661, May 31 2000 OSRAM Opto Semiconductors GmbH Epoxy-resin systems, which are resistant to aging, moulding materials, components produced therefrom and the use thereof
7192797, Feb 03 2005 BIING-JAY LEE; EPISTAR CORPORATION Light emitting device and manufacture method thereof
7193299, Aug 21 2001 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Conductor frame and housing for a radiation-emitting component, radiation-emitting component and display and/or illumination system using radiation-emitting components
7196359, Aug 13 2001 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Radiation-emitting chip and radiation-emitting component
7201495, Aug 03 2004 Lumileds LLC Semiconductor light emitting device package with cover with flexible portion
7202181, Mar 26 2004 CREE LED, INC Etching of substrates of light emitting devices
7211832, Jan 13 2004 Toyoda Gosei Co., Ltd. Light emitting apparatus
7211833, Jul 23 2001 CREE LED, INC Light emitting diodes including barrier layers/sublayers
7211835, Jul 09 2003 Nichia Corporation Light emitting device, method of manufacturing the same and lighting equipment
7215074, Jul 29 1996 Nichia Corporation Light emitting device with blue light led and phosphor components
7217583, Sep 21 2004 CREELED, INC Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
7227190, Sep 30 2002 TridonicAtco Optoelectronics Gmbh White light emitting device
7227191, Apr 30 2004 OSRAM Opto Semiconductors GmbH Optoelectronic component having a plurality of current expansion layers and method for producing it
7244968, Jun 03 2003 SAMSUNG ELECTRONICS CO , LTD GaN-based semiconductor junction structure
7247257, Apr 20 2001 Nichia Corporation Light emitting device
7247884, Jun 08 2001 TOYODA GOSEI CO , LTD Group III nitride compound semiconductor light-emitting element
7247940, Feb 28 2003 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Optoelectronic device with patterned-metallized package body, method for producing such a device and method for the patterned metallization of a plastic-containing body
7250715, Feb 23 2004 Lumileds LLC Wavelength converted semiconductor light emitting devices
7253450, Sep 17 2003 TOYODA GOSEI CO , LTD Light-emitting device
7253451, Nov 29 2004 EPIVALLEY CO , LTD F K A SUNGIL TELECOM CO , LTD III-nitride semiconductor light emitting device
7256428, Jun 20 2001 OSRAM Opto Semiconductors GmbH Optoelectronic component and method for the production thereof
7256468, Apr 17 2001 Nichia Corporation Light emitting device
7256483, Oct 28 2004 Lumileds LLC Package-integrated thin film LED
7258816, Mar 22 2002 Nichia Corporation Nitride phosphor and method for preparation thereof, and light emitting device
7259033, Jul 23 2001 CREE LED, INC Flip-chip bonding of light emitting devices
7259402, Sep 22 2004 CREE LED, INC High efficiency group III nitride-silicon carbide light emitting diode
7264527, Jul 09 1999 Lumileds LLC Quantum dot white and colored light-emitting devices
7265392, May 26 2000 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
7268371, Jun 03 1997 Philips Lumileds Lighting Company LLC Light extraction from a semiconductor light emitting device via chip shaping
7274040, Oct 06 2004 Lumileds LLC Contact and omnidirectional reflective mirror for flip chipped light emitting devices
7276737, Jul 31 2003 Philips Lumileds Lighting Company LLC; Lumileds LLC Light emitting devices with improved light extraction efficiency
7279346, Mar 31 2004 CREE LED, INC Method for packaging a light emitting device by one dispense then cure step followed by another
7279723, Mar 20 2003 TOYODA GOSEI CO , LTD ; KOHA CO , LTD LED lamp
7279724, Feb 25 2004 Lumileds LLC Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
7280288, Jun 04 2004 CREELED, INC Composite optical lens with an integrated reflector
7282744, May 09 2003 CREELED, INC III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
7288797, Jan 20 2004 Nichia Corporation Semiconductor light emitting element
7291529, Nov 12 2003 CREE LED, INC Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon
7291865, Sep 29 2004 Toyoda Gosei Co., Ltd.; TOYODA GOSEI CO , LTD Light-emitting semiconductor device
7294866, Mar 01 2004 EPISTAR CORPORATION Flip-chip light-emitting device with micro-reflector
7319247, Apr 26 2000 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Light emitting-diode chip and a method for producing same
7319289, Mar 10 2003 TOYODA GOSEI CO , LTD ; SUMITA OPTICAL GLASS INC Light emitting device
7326583, Mar 31 2004 CREE LED, INC Methods for packaging of a semiconductor light emitting device
7326967, Jul 12 2004 EPISTAR CORPORATION Light emitting diode having an omnidirectional reflector including a transparent conductive layer
7329587, Jun 24 2003 OSRAM Opto Semiconductors GmbH Method for the production of semi-conductor chips
7329905, Jun 30 2004 CREE LED, INC Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
7332365, May 18 2004 CREELED, INC Method for fabricating group-III nitride devices and devices fabricated using method
7335522, Mar 18 2003 BIING-JAY LEE; EPISTAR CORPORATION Package structure for light emitting diode and method thereof
7335920, Jan 24 2005 CREE LED, INC LED with current confinement structure and surface roughening
7338822, May 09 2003 CREE LED, INC LED fabrication via ion implant isolation
7341878, Mar 14 2005 Lumileds LLC Wavelength-converted semiconductor light emitting device
7344902, Nov 15 2004 Lumileds LLC Overmolded lens over LED die
7345297, Feb 09 2004 Nichia Corporation Nitride semiconductor device
7345313, Oct 26 2001 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Nitride-based semiconductor component such as a light-emitting diode or a laser diode
7345413, Feb 20 2003 OSRAM Gesellschaft mit beschrankter Haftung Coated luminescent material and light-emitting device having such a luminescent material
7348600, Oct 20 2003 Nichia Corporation; Yoichi, Kawakami; Mitsuru, Funato; Shigeo, Fujita; California Institute of Technology Nitride semiconductor device, and its fabrication process
7351356, Sep 24 2002 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Luminescent material, especially for LED application
7352011, Nov 15 2004 Lumileds LLC Wide emitting lens for LED useful for backlighting
7355209, Feb 05 2005 EPISTAR CORPORATION Light emitting diode and method making the same
7355210, Mar 24 2004 EPISTAR CORPORATION High-efficiency light-emitting element
7355284, Mar 29 2004 CREE LED, INC Semiconductor light emitting devices including flexible film having therein an optical element
7358522, Nov 05 2001 Nichia Corporation Semiconductor device
7358540, Jan 16 2004 EPISTAR CORPORATION Organic adhesive light-emitting device with ohmic metal contact
7361938, Jun 03 2004 Lumileds LLC Luminescent ceramic for a light emitting device
7362048, Jul 29 1996 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device with blue light led and phosphor components
7365369, Jun 11 1997 Nichia Corporation Nitride semiconductor device
7365371, Aug 04 2005 CREE LED, INC Packages for semiconductor light emitting devices utilizing dispensed encapsulants
7368329, Jun 30 1998 Osram GmbH Diode housing
7372198, Sep 23 2004 CREE LED, INC Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
7375377, Jul 03 2000 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Ingan-based light-emitting diode chip and a method for the production thereof
7382033, Dec 20 2002 TOYODA GOSEI CO , LTD ; ROTH, GUNDULA; TEWS, WALTER Luminescent body and optical device including the same
7384809, Apr 01 2004 CREE LED, INC Method of forming three-dimensional features on light emitting diodes for improved light extraction
7385226, Mar 24 2004 EPISTAR CORPORATION Light-emitting device
7387677, Dec 11 2002 AMMONO SP Z O O ; Nichia Corporation Substrate for epitaxy and method of preparing the same
7388232, Oct 31 2003 Toyoda Gosei Co., Ltd. Light emitting element and light emitting device
7390684, Oct 12 2001 Nichia Corporation Light emitting apparatus and method of manufacturing the same
7393122, Oct 04 2004 Toyoda Gosei Co., Ltd. Lamp
7393213, May 19 2004 EPIVALLEY CO , LTD FORMERLY SUNGIL TELECOM CO , LTD Method for material growth of GaN-based nitride layer
7402837, Nov 12 2003 CREE LED, INC Light emitting devices with self aligned ohmic contacts
7402840, Sep 27 2002 Philips Lumileds Lighting Company, LLC Selective filtering of wavelength-converted semiconductor light emitting devices
7405093, Aug 18 2004 CREE LED, INC Methods of assembly for a semiconductor light emitting device package
7414269, May 30 2003 OSRAM Opto Semiconductors GmbH Housing for a radiation-emitting component, method for the production thereof, and radiation-emitting component
7419839, Nov 12 2004 Lumileds LLC Bonding an optical element to a light emitting device
7429750, Mar 23 2004 TOYODA GOSEI CO , LTD Solid-state element and solid-state element device
7429758, Jun 28 2002 OSRAM Opto Semiconductors GmbH; OSRAM OLED GmbH Optoelectronic component and method for producing it
7432534, Mar 05 2004 EPIVALLEY CO , LTD F K A SUNGIL TELECOM CO , LTD III-nitride semiconductor light emitting device
7432536, Nov 04 2004 Cree, Inc LED with self aligned bond pad
7432589, Apr 19 2006 Nichia Corporation Semiconductor device
7432642, Apr 25 2002 Nichia Corporation Semiconductor light emitting device provided with a light conversion element using a haloborate phosphor composition
7432647, Jul 09 2004 CITIZEN ELECTRONICS CO , LTD Light source having phosphor including divalent trivalent and tetravalent elements
7436002, Jun 29 2001 Osram GmbH Surface-mountable radiation-emitting component
7436066, Oct 19 2004 Nichia Corporation Semiconductor element
7439091, Mar 17 2006 EPISTAR CORPORATION Light-emitting diode and method for manufacturing the same
7439609, Mar 29 2004 CREE INC Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
7442254, Apr 11 1997 Nichia Corporation Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer
7442644, Jul 21 2004 Nichia Corporation Method for manufacturing nitride semiconductor wafer or nitride semiconductor device; nitride semiconductor wafer or nitride semiconductor device made by the same; and laser irradiating apparatus used for the same
7442966, Sep 30 2002 Osram GmbH Electromagnetic radiation emitting semiconductor chip and procedure for its production
7445354, Sep 27 2005 Nichia Corporation Light emitting apparatus
7446343, Jan 16 2006 Lumileds LLC Phosphor converted light emitting device
7446344, Sep 28 2001 OSRAM Opto Semiconductors GmbH Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component
7446345, Apr 29 2005 CREE LED, INC Light emitting devices with active layers that extend into opened pits
7446346, Jan 31 2003 OSRAM Opto Semiconductors GmbH Semiconductor substrate for optoelectronic components and method for fabricating it
7452737, Nov 15 2004 Lumileds LLC Molded lens over LED die
7456499, Jun 04 2004 CREELED, INC Power light emitting die package with reflecting lens and the method of making the same
7462861, Apr 28 2004 CREE LED, INC LED bonding structures and methods of fabricating LED bonding structures
7473933, Oct 29 2004 LED ENGIN, INC High power LED package with universal bonding pads and interconnect arrangement
7772604, Jan 05 2006 Illumitex Separate optical device for directing light from an LED
7789531, Oct 02 2006 Illumitex, Inc.; ILLUMITEX, INC LED system and method
7829358, Feb 08 2008 ILLUMITEX, INC System and method for emitter layer shaping
7968896, Jan 05 2006 Illumitex, Inc. Separate optical device for directing light from an LED
8087960, Oct 02 2006 Illumitex, Inc. LED system and method
8263993, Feb 08 2008 Illumitex, Inc. System and method for emitter layer shaping
8449128, Aug 20 2009 ILLUMITEX, INC System and method for a lens and phosphor layer
8585253, Aug 20 2009 ILLUMITEX, INC System and method for color mixing lens array
20020012247,
20020017844,
20020030194,
20020080615,
20020080622,
20020123164,
20020127864,
20020141006,
20020163808,
20030002272,
20030089914,
20030132447,
20030156416,
20040016718,
20040036080,
20040046489,
20040079957,
20040114393,
20040120153,
20040126913,
20040155565,
20040201987,
20040207774,
20040218390,
20040222426,
20040232825,
20040233665,
20040264185,
20050001230,
20050006651,
20050007777,
20050018248,
20050024887,
20050047729,
20050051782,
20050063181,
20050073840,
20050073849,
20050077529,
20050093430,
20050173719,
20050195488,
20050215000,
20050218790,
20050285129,
20060001037,
20060044523,
20060046622,
20060091414,
20060094340,
20060108590,
20060192194,
20070063214,
20070120135,
20070152230,
20080030974,
20080030993,
20080062672,
20080080166,
20080081531,
20080266893,
20090085043,
20090085052,
20090087937,
20090087994,
20090189512,
20090275157,
20090275266,
20090309116,
20110044022,
20110273894,
20120068615,
20150036358,
D453745, Dec 27 1999 Nichia Corporation Light emitting diode
D477579, Dec 27 1999 Nichia Corporation Light emitting diode
D477580, Jan 30 2002 Nichia Corporation Light emitting diode
D478877, Nov 21 2001 Nichia Corporation Light emitting diode
D482337, Dec 28 2001 Nichia Corporation Light emitting diode (LED)
D482666, Nov 30 2001 Nichia Corporation Light emitting diode (LED)
D489690, Jun 05 2003 Nichia Corporation Light emitting diode (LED)
D490387, Nov 22 2001 Nichia Corporation Light emitting diode
D490782, Dec 27 1999 Nichia Corporation Light emitting diode
D490784, May 01 2002 Nichia Corporation Light emitting diode
D491538, Nov 02 2001 Nichia Corporation Light emitting diode
D491899, May 22 2002 Nichia Corporation Light emitting diode
D495822, May 16 2003 CCS, INC Attachment lens for LED
D496007, Nov 21 2001 Nichia Corporation Light emitting diode
D497349, Nov 21 2001 Nichia Corporation Light emitting diode
D499384, Dec 28 2001 Nichia Corporation Light emitting diode
D499385, May 01 2002 Nichia Corporation Light emitting diode
D502449, Dec 06 2002 Nichia Corporation Light emitting diode (LED)
D503388, May 01 2002 Nichia Corporation Light emitting diode
D506449, Nov 21 2001 Nichia Corporation Light emitting diode
D510913, Sep 09 2003 Nichia Corporation Light emitting diode
D534505, Dec 28 2001 Nichia Corporation Light emitting diode
D536672, Sep 05 2002 Nichia Corporation Light emitting diode
D537047, Sep 05 2002 Nichia Corporation Light emitting diode
D547736, Dec 28 2001 Nichia Corporation Light emitting diode
D557224, Dec 28 2001 Nichia Corporation Light emitting diode
D565516, Dec 28 2001 Nichia Corporation Light emitting diode
D571738, Jun 14 2007 Lumileds LLC LED package
D572209, Aug 04 2006 Nichia Corporation Light emitting diode
D578226, Jul 20 2006 Lumileds LLC LED package
D580380, Aug 04 2006 Nichia Corporation Light emitting diode
D582865, Jun 11 2007 CREE LED, INC LED chip
D582866, Sep 07 2007 CREE LED, INC LED chip
EP534843,
EP1380469,
JP2000180962,
JP200353647,
JP2005109289,
JP2005197728,
JP2005217094,
JP2005327820,
JP2005537631,
JP2007035951,
JP2007281260,
JP2008041739,
JP3900144,
WO2004021461,
WO2007061638,
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