Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.
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1. An apparatus for manufacturing a light-emitting device, the apparatus comprising:
a vacuum table comprising a center portion protruding upward and peripheral portions that are stepped to be lower than the center portion;
a carrier film disposed on the vacuum table for attaching the wafer, on which a plurality of light-emitting devices are formed, on the carrier film; and
a printing mask for uniformly coating a phosphor paste on the wafer,
wherein the carrier film comprises a carrier frame formed along a circumference of the carrier film and a diameter of the protruding center portion of the vacuum table is smaller than an inner diameter of the carrier frame.
4. An apparatus for manufacturing a light-emitting device, the apparatus comprising:
a vacuum table comprising a center portion protruding upward and peripheral portions that are stepped to be lower than the center portion;
a carrier film disposed on the vacuum table for attaching the wafer, on which a plurality of light-emitting devices are formed, on the carrier film; and
a printing mask for uniformly coating a phosphor paste on the wafer,
wherein the printing mask comprises a mask frame formed around the circumference of the printing mask to support the printing mask, a first masking member formed to cover a region other than the wafer, and a printing region corresponding to the wafer.
2. The apparatus of
3. The apparatus of
5. The apparatus of
6. The apparatus of
7. The apparatus of
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This application is a Divisional of U.S. patent application Ser. No. 13/338,678, filed on Dec. 28, 2011, which claims the priority of Korean Patent Application No. 10-2011-0004530, filed on Jan. 17, 2011, the disclosures of which are incorporated herein in its entirety by reference.
1. Field
The present disclosure relates to methods and apparatuses for manufacturing a white light-emitting device, and more particularly, to methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level.
2. Description of the Related Art
Light emitting diodes (LEDs) are semiconductor light-emitting devices that change an electric signal into light by using the characteristics of a compound semiconductor. Semiconductor light-emitting devices such as LEDs have a longer lifetime than other general luminous bodies, are driven at a low voltage, and have low power consumption. Also, the semiconductor light-emitting devices such as LEDs have excellent response speeds and impact resistance and are small and light in weight. Such a semiconductor light-emitting device may emit lights of different wavelengths according to the type and composition of a semiconductor used and if desired, may form lights of different wavelengths.
Currently, lighting lamps using a white light-emitting device having high brightness have been replaced with general fluorescent lamps or incandescent lamps. The white light-emitting device may be manufactured by forming a red, green, or yellow phosphor layer on a emission surface of the light emitting device that emits blue or UV light. The phosphor layer is generally formed in the light emitting device during the separation of the light emitting device from a wafer and packaging. For example, the phosphor layer may be formed by coating phosphor paste on the light emitting device and hardening the phosphor paste after attaching the light emitting device on a wiring substrate such as a lead frame or a printed circuit board (PCB). However, when the phosphor layer is formed during packaging, optical characteristics of each completed light-emitting device package may vary by dispersion generated while forming the phosphor layer in each packaging process. Accordingly, it may be hard to secure uniform quality of a light-emitting device package.
Provided are methods and apparatuses for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level.
Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments.
According to an aspect of the present invention, a method of manufacturing a light-emitting device includes: forming a plurality of light emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.
The forming of the phosphor layer may include: disposing the carrier film, on which the wafer is disposed, on a vacuum table; closely adhering and fixing the carrier film on the vacuum table by vacuum suction pressure; coating a phosphor paste on the wafer; and forming the phosphor layer by hardening the phosphor paste.
The vacuum table may have a stepped structure, in which a center portion thereof protrudes to be higher than peripheral portions thereof.
A carrier frame may be disposed along a circumference of the carrier film, and a diameter of the protruding center portion of the vacuum table may be smaller than an inner diameter of the carrier frame.
The carrier frame formed along the circumference of the carrier film may be closely adhered and fixed to the peripheral portions of the vacuum table, and the wafer disposed on the carrier film may be closely adhered and fixed to the center portion of the vacuum table.
A height of the center portion of the vacuum table may be higher than a height of the carrier frame.
The coating of the phosphor paste may include: disposing a printing mask on the wafer; providing the phosphor paste on the printing mask; and pressurizing the phosphor paste by using a squeegee and uniformly coating the phosphor paste on the wafer.
The printing mask may include a mask frame formed around the circumference of the printing mask to support the printing mask, a first masking member formed to cover a region other than the wafer, and a printing region corresponding to the wafer.
The printing region may include a plurality of openings having the same pattern as that of the plurality of light-emitting devices formed on the wafer, a second masking member formed to correspond to the scribe line formed between the light-emitting devices, and third masking members formed to correspond to electrode pads formed on the light-emitting devices.
The printing region may include a plurality of openings having the same pattern as that of the plurality of light-emitting devices formed on the wafer and a second masking member formed to correspond to the scribe line formed between the light-emitting devices, the second masking member being extended to regions corresponding to the electrode pads formed on the light-emitting devices.
The printing region may include one opening entirely formed in the printing region and third masking members formed to correspond to electrode pads formed on the light-emitting devices.
The method may further include: after the phosphor layer is formed, removing the wafer from the carrier film; and dicing the plurality of light-emitting devices formed on the wafer.
The carrier film may include a base film and a cohesive layer formed on the base film.
The cohesive layer may include a photosensitive adhesive (PSA) that may be hardened by UV light and the base film has permeability for UV light.
The removing of the wafer from the carrier film may include hardening the cohesive layer by irradiating UV light from the lower side of the carrier film and removing the wafer from the hardened cohesive layer.
According to another aspect of the present invention, a method of manufacturing a light-emitting device includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; separating the plurality of light-emitting devices formed on the wafer through dicing; arranging the separated light-emitting devices on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices arranged on the carrier film.
The forming of the phosphor layer may include: disposing the carrier film, on which the light-emitting devices are arranged, on a vacuum table; closely adhering and fixing the carrier film on the vacuum table by vacuum suction pressure; coating a phosphor paste on the light-emitting devices; and forming the phosphor layer by hardening the phosphor paste.
According to another aspect of the present invention, an apparatus for manufacturing a light-emitting device includes: a vacuum table comprising a center portion protruding upward and peripheral portions that are stepped to be lower than the center portion; a carrier film disposed on the vacuum table for attaching the wafer, on which a plurality of light-emitting devices are formed, on the carrier film; and a printing mask for uniformly coating a phosphor paste on the wafer.
These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
Hereinafter, a method and apparatus for manufacturing a white light-emitting device according to one or more embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals denote like portions and sizes of each element are exaggerated for clarity.
In the method of manufacturing a white light-emitting device, according to the current embodiment of the present invention, a plurality of semiconductor light-emitting devices 110 are formed on a wafer 101, as illustrated in
When forming of the plurality of semiconductor light-emitting devices 110 on the wafer 101 is completed, the wafer 101 is thinned, as illustrated in
After thinning the wafer 101, the phosphor layer is formed on an emission surface of the semiconductor light-emitting devices 110 at a wafer-level by using, for example, screen printing.
In general, when the wafer 101 is thinned by the thinning process, the wafer 101 may be warped during the forming of the phosphor layer. In order to prevent warpage, the phosphor layer is formed while the wafer 101 is attached on the carrier film 120 according to an embodiment of the present invention. Then, since the carrier film 120 holds the wafer 101, the wafer 101 is hardly warped.
Referring to
Referring to
When the printing mask 140 is dispersed on the wafer 101, a phosphor paste 160 is provided on the printing mask 140, as illustrated in
The phosphor paste 160 may be a mixture of a single type or a plurality of types of phosphor and a binder resin mixed according to a predetermined mixture ratio. The type and mixture ratio of the used phosphor may be selected according to desired emission characteristics. The binder resin may be formed of a material having excellent heat resistance and light transmittance and high photorefractive index. For example, epoxy- or silicon-based curable resin may be used. Such a curable resin may have a shore A hardness of 50 or above after hardening. Also, the curable resin may be mainly formed of a thermosetting resin material, wherein the thermosetting resin material may partially include UV curable material.
When the phosphor paste 160 is uniformly coated on the wafer 101, the vacuum table 130 drops downward, as illustrated in
When forming of the phosphor layer 150 is completed, the wafer 101 formed on the carrier film 120 may be separated from the carrier film 120. When the cohesive layer 120b is formed of a PSA that may be hardened by UV light, UV light may be irradiated from the lower side of the carrier film 120 before removing of the wafer 101 and the cohesive layer 120b may be hardened. Then, the cohesive layer 120b is hardened and the wafer 101 may be easily removed. In the subsequent process, the plurality of semiconductor light-emitting devices 110 formed on the wafer 101 are each separated by dicing and the separate light emitting devices 110 are packaged, thereby manufacturing a white light-emitting device package. At this point, the characteristics of white light emitted through the phosphor layer 150 are examined and then the semiconductor light-emitting devices 110 having desired emission characteristics may be packaged. Then, white light-emitting device packages having uniform emission characteristics may be provided.
The form of the printing region 142 illustrated in
In
Also, in
As described above, the phosphor layer 150 is firstly formed on the wafer 101, on which the semiconductor light-emitting devices 110 are formed, and then the semiconductor light-emitting devices 110 on the wafer 101 are each separated through dicing. However, the semiconductor light-emitting devices 110 on the wafer 101 may be firstly diced before forming the phosphor layer 150. For example, the wafer 101 is thinned and then the semiconductor light-emitting devices 110 on the wafer 101 are each separated through dicing. Then, the semiconductor light-emitting devices 110 are arranged on the carrier film 120 illustrated in
When forming of the phosphor layer 150 is completed, the cohesive layer 120b is hardened and then the semiconductor light-emitting devices 110 may be separately removed from the carrier film 120. Also, the carrier film 120 is directly cut so as to separate each semiconductor light-emitting device 110. Here, when the flexible base film 120a is used, the base film 120a is pulled and extended so that intervals between the semiconductor light-emitting devices 110 may increase. Then, since the intervals between the semiconductor light-emitting devices 110 may be sufficiently secured, the semiconductor light-emitting devices 110 may be easily removed from the carrier film 120 or the carrier film 120 may be easily cut. As such, when dicing is performed prior to forming of the phosphor layer 150, the phosphor layer 150 may be prevented from being damaged or contaminated due to minute particles generated during dicing.
It should be understood that the exemplary embodiments described therein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments.
Tsutsui, Tsuyoshi, Hong, Seong-Jae, Yoo, Cheol-jun, Kim, Shin-kun
Patent | Priority | Assignee | Title |
Patent | Priority | Assignee | Title |
3846, | |||
5288663, | Apr 28 1992 | Casio Computer Co., Ltd. | Method for extending wafer-supporting sheet |
5888883, | Jul 23 1997 | TOSHIBA MEMORY CORPORATION | Method of dividing a wafer and method of manufacturing a semiconductor device |
6297131, | Apr 22 1999 | SOCIONEXT INC | Semiconductor device manufacturing method for grinding and dicing a wafer from a back side of the wafer |
6372608, | Aug 27 1996 | SAMSUNG ELECTRONICS CO , LTD | Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method |
6645830, | Aug 27 1996 | SAMSUNG ELECTRONICS CO , LTD | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same |
6818465, | Aug 22 2001 | SAMSUNG ELECTRONICS CO , LTD | Nitride semiconductor element and production method for nitride semiconductor element |
681853, | |||
6818530, | Aug 27 1996 | SAMSUNG ELECTRONICS CO , LTD | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same |
6858081, | Jan 17 2002 | SAMSUNG ELECTRONICS CO , LTD | Selective growth method, and semiconductor light emitting device and fabrication method thereof |
6967353, | Jan 18 2002 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor light emitting device and fabrication method thereof |
7002182, | Sep 06 2002 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit |
7049159, | Oct 13 2000 | Lumileds LLC | Stenciling phosphor layers on light emitting diodes |
708442, | |||
7084420, | Oct 26 2004 | SAMSUNG ELECTRONICS CO , LTD | Nitride based semiconductor device |
7087932, | Jul 18 2001 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor light-emitting device and semiconductor light-emitting device |
7154124, | Dec 23 2003 | SAMSUNG ELECTRONICS CO , LTD | Nitride semiconductor light emitting device and method for manufacturing the same |
7208725, | Nov 25 1998 | SAMSUNG ELECTRONICS CO , LTD | Optoelectronic component with encapsulant |
7288758, | Nov 25 1998 | SAMSUNG ELECTRONICS CO , LTD | Wafer-level optoelectronic device substrate |
7319044, | Dec 23 2003 | SAMSUNG ELECTRONICS CO , LTD | Nitride semiconductor light emitting device and method for manufacturing the same |
7482690, | Jun 10 1998 | UTAC HEADQUARTERS PTE LTD | Electronic components such as thin array plastic packages and process for fabricating same |
7501656, | Jul 26 2005 | SAMSUNG ELECTRONICS CO , LTD | Light emitting diode package with diffuser and method of manufacturing the same |
7709857, | Apr 24 2007 | SAMSUNG ELECTRONICS CO , LTD | Light emitting diode package |
7759140, | Oct 21 2003 | SAMSUNG ELECTRONICS CO , LTD | Light-emitting device and method of manufacturing the same |
7781727, | Nov 25 1998 | SAMSUNG ELECTRONICS CO , LTD | Optoelectronic component comprising an encapsulant |
7790482, | Jul 26 2005 | SAMSUNG ELECTRONICS CO , LTD | Light emitting diode package with diffuser and method of manufacturing the same |
7930974, | Jun 27 2006 | Mitsubishi Electric Corporation | Screen printing machine and solar cell |
7940350, | May 15 2007 | SAMSUNG ELECTRONICS CO , LTD | Plane light source and LCD backlight unit having the same |
7959312, | Dec 05 2006 | SAMSUNG ELECTRONICS CO , LTD | White light emitting device and white light source module using the same |
7964881, | Oct 19 2007 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same |
7985976, | Oct 19 2007 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same |
7994525, | Oct 07 2005 | SAMSUNG ELECTRONICS CO , LTD | Nitride-based semiconductor light emitting diode |
8008683, | Oct 22 2008 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor light emitting device |
8013352, | Jan 10 2006 | SAMSUNG ELECTRONICS CO , LTD | Chip coated light emitting diode package and manufacturing method thereof |
8049161, | Nov 25 1998 | SAMSUNG ELECTRONICS CO , LTD | Optoelectronic component with flip-chip mounted optoelectronic device |
8129711, | Jul 12 2007 | SAMSUNG ELECTRONICS CO , LTD | Nitride semiconductor light emitting device and fabrication method thereof |
8179938, | Sep 16 2008 | Samsung Electronics Co., Ltd. | Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device |
8263987, | Oct 19 2007 | SAMSUNG ELECTRONICS CO , LTD | Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same |
8324646, | Jan 10 2006 | SAMSUNG ELECTRONICS CO , LTD | Chip coated light emitting diode package and manufacturing method thereof |
8399944, | Sep 02 2002 | SAMSUNG ELECTRONICS CO , LTD | Light emitting diode and method for fabricating the same |
8432511, | May 15 2007 | SAMSUNG ELECTRONICS CO , LTD | Plane light source and LCD backlight unit having the same |
8459832, | Sep 08 2008 | Samsung Electronics Co., Ltd. | Light emitting device and system providing white light with various color temperatures |
8502242, | Aug 05 2008 | Samsung Electronics Co., Ltd. | Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system |
8536604, | Sep 02 2002 | SAMSUNG ELECTRONICS CO , LTD | Light emitting diode and method for fabricating the same |
8735931, | Apr 17 2006 | SAMSUNG ELECTRONICS CO , LTD | Light emitting diode package and fabrication method thereof |
8766295, | Aug 05 2008 | Samsung Electronics Co., Ltd. | Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system |
20080173884, | |||
20080290351, | |||
20090134420, | |||
20090179207, | |||
20100078657, | |||
20100120230, | |||
20110266560, | |||
KR1020090102121, | |||
KR1020090122210, | |||
RE38466, | Nov 12 1996 | SAMSUNG ELECTRONICS CO , LTD | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
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