Patent
   D472531
Priority
Jun 25 2002
Filed
Jun 25 2002
Issued
Apr 01 2003
Expiry
Apr 01 2017
Assg.orig
Entity
unknown
4
15
n/a
The ornamental design for a semiconductor element, as shown and described.

FIG. 1 is front perspective of a semiconductor element showing our new design, wherein the truncated hexagonal pyramid portion thereof is transparent;

FIG. 2 is a front elevational view thereof;

FIG. 3 is a rear elevational view thereof;

FIG. 4 is a right side elevational view thereof;

FIG. 5 is a left side elevational view thereof; and,

FIG. 6 is a top plan view thereof.

Portions in broken lines are for illustrative purposes only and form no part of claimed design.

Okuyama, Hiroyuki, Oohata, Toyoharu, Biwa, Goshi, Doi, Masato

Patent Priority Assignee Title
11505399, May 05 2022 AL HARBI, ALAA SULEIMAN GHAZAI Electronic circuit board bag
D505923, Nov 13 2003 Sony Corporation Semiconductor element
D505924, Nov 13 2003 Sony Corporation Semiconductor element
D724554, Feb 19 2014 Fuji Electric Co., Ltd. Semiconductor module
Patent Priority Assignee Title
4685996, Oct 14 1986 Method of making micromachined refractory metal field emitters
5176557, Feb 06 1987 Canon Kabushiki Kaisha Electron emission element and method of manufacturing the same
5201681, Feb 06 1987 Canon Kabushiki Kaisha Method of emitting electrons
5399238, Nov 07 1991 SI DIAMOND TECHNOLOGY, INC Method of making field emission tips using physical vapor deposition of random nuclei as etch mask
5482002, Sep 24 1987 Canon Kabushiki Kaisha Microprobe, preparation thereof and electronic device by use of said microprobe
5572041, Sep 16 1992 Fujitsu Limited Field emission cathode device made of semiconductor substrate
5861707, Nov 07 1991 SI DIAMOND TECHNOLOGY, INC Field emitter with wide band gap emission areas and method of using
6051849, Feb 27 1998 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
6185013, Dec 23 1996 Xerox Corporation Color printing having a plural highlight color image map in a full color image
6252261, Sep 30 1998 NEC Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
6413627, Jun 18 1998 Sumitomo Electric Industries, Ltd. GaN single crystal substrate and method of producing same
JP2000150391,
JP2830814,
WO207231,
WO207232,
/////
Executed onAssignorAssigneeConveyanceFrameReelDoc
Jun 06 2002OKUYAMA, HIROYUKISony CorporationASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0130410690 pdf
Jun 06 2002DOI, MASATOSony CorporationASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0130410690 pdf
Jun 06 2002BIWA, GOSHISony CorporationASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0130410690 pdf
Jun 06 2002OOHATA, TOYOHARUSony CorporationASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0130410690 pdf
Jun 25 2002Sony Corporation(assignment on the face of the patent)
n/a
Date Maintenance Fee Events


n/a
Date Maintenance Schedule