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The ornamental design for an electrode layer, as shown and described.
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FIG. 1 is a top plan view of an electrode layer showing my new design;
FIG. 2 is a bottom plan view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side elevational view thereof; and,
FIG. 6 is a right side elevational view thereof.
Patent | Priority | Assignee | Title |
8950681, | Nov 07 2011 | BlackBerry Limited | Universal integrated circuit card apparatus and related methods |
D545769, | Feb 17 2006 | Stora Enso AB | Switch |
D578536, | Aug 27 2007 | Podium Photonics (Guangzhou) Ltd.; PODIUM PHOTONICS GUANGZHOU LTD | Chip |
D691610, | Nov 07 2011 | BlackBerry Limited | Device smart card |
D692005, | Nov 07 2011 | BlackBerry Limited | Device smart card |
D702694, | Nov 07 2011 | BlackBerry Limited | Device smart card |
D716241, | Jul 11 2013 | Sumitomo Electric Printed Circuits, Inc.; Sumitomo Electric Fine Polymer, Inc. | Wiring board |
D716741, | Jul 11 2013 | Sumitomo Electric Printed Circuits, Inc.; Sumitomo Electric Fine Polymer, Inc. | Wiring board |
D794584, | Apr 16 2014 | QINGDAO BRIGHT MEDICAL MANUFACTURING CO., LTD. | Electrode strip |
D868011, | Jun 20 2017 | Nippon Chemi-Con Corporation | Electrode foil for capacitor |
Patent | Priority | Assignee | Title |
6344665, | Jun 23 2000 | Arima Optoelectronics Corp. | Electrode structure of compound semiconductor device |
6518598, | Dec 21 2001 | EPISTAR CORPORATION | III-nitride LED having a spiral electrode |
6603152, | Sep 04 2000 | SAMSUNG ELECTRONICS CO , LTD | Blue light emitting diode with electrode structure for distributing a current density |
6650018, | May 24 2002 | DALIAN MEIMING EPITAXY TECHNOLOGY CO , LTD | High power, high luminous flux light emitting diode and method of making same |
6815886, | Apr 14 2000 | Seiko Epson Corporation; Cambridge University Technical Services Limited of the Old Schools | Light emitting device comprising a substrate, a transparent electrode, a layer of light emitting material and a second electrode and a method of manufacturing the light emitting device |
20030006422, | |||
20050224823, | |||
D262962, | Nov 03 1978 | Silicon wafer emitter electrode configuration |
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