Patent
   D534506
Priority
Nov 02 2005
Filed
Nov 02 2005
Issued
Jan 02 2007
Expiry
Jan 02 2021
Assg.orig
Entity
unknown
11
8
n/a
The ornamental design for an electrode layer, as shown and described.

FIG. 1 is a top plan view of an electrode layer showing my new design;

FIG. 2 is a bottom plan view thereof;

FIG. 3 is a front elevational view thereof;

FIG. 4 is a rear elevational view thereof;

FIG. 5 is a left side elevational view thereof; and,

FIG. 6 is a right side elevational view thereof.

Lai, Mu-Jen

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D716241, Jul 11 2013 Sumitomo Electric Printed Circuits, Inc.; Sumitomo Electric Fine Polymer, Inc. Wiring board
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ER4359,
ER5833,
Patent Priority Assignee Title
6344665, Jun 23 2000 Arima Optoelectronics Corp. Electrode structure of compound semiconductor device
6518598, Dec 21 2001 EPISTAR CORPORATION III-nitride LED having a spiral electrode
6603152, Sep 04 2000 SAMSUNG ELECTRONICS CO , LTD Blue light emitting diode with electrode structure for distributing a current density
6650018, May 24 2002 DALIAN MEIMING EPITAXY TECHNOLOGY CO , LTD High power, high luminous flux light emitting diode and method of making same
6815886, Apr 14 2000 Seiko Epson Corporation; Cambridge University Technical Services Limited of the Old Schools Light emitting device comprising a substrate, a transparent electrode, a layer of light emitting material and a second electrode and a method of manufacturing the light emitting device
20030006422,
20050224823,
D262962, Nov 03 1978 Silicon wafer emitter electrode configuration
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Executed onAssignorAssigneeConveyanceFrameReelDoc
Oct 20 2005LAI, MU-JENSUPERNOVA OPTOELECTRONICS CORP ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0170030845 pdf
Nov 02 2005Supernova Optoelectronics Corp.(assignment on the face of the patent)
Oct 25 2012SUPERNOVA OPTOELECTRONICS CORP SEMILEDS OPTOELECTRONICS CO , LTD ASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0292480298 pdf
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