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Patent
D604256
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Priority
Jun 12 2008
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Filed
Jun 12 2008
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Issued
Nov 17 2009
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Expiry
Nov 17 2023
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Assg.orig
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Entity
unknown
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4
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11
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n/a
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The ornamental design for a light emitting diode device, as shown and described.
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FIG. 1 is a top view of an embodiment of our new design.
FIG. 2 is a cross-sectional view of FIG. 1.
FIG. 3 is a right side view of FIG. 1; the left side view is a mirror image of the right side view.
FIG. 4 is a front view of FIG. 1; and,
FIG. 5 is a rear view of FIG. 1.
Liu, Wen-Huang
| Patent |
Priority |
Assignee |
Title |
| 5652434, |
Apr 28 1993 |
Nichia Corporation |
Gallium nitride-based III-V group compound semiconductor |
| 6097040, |
Jul 23 1997 |
Sharp Kabushiki Kaisha |
Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad |
| 6153894, |
Nov 12 1998 |
TOYODA GOSEI CO , LTD |
Group-III nitride semiconductor light-emitting device |
| 6204512, |
Apr 28 1993 |
Nichia Chemical Industries, Ltd. |
Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
| 6281526, |
Mar 05 1997 |
Kabushiki Kaisha Toshiba |
Nitride compound light emitting device and method for fabricating same |
| 6287947, |
Jun 08 1999 |
Lumileds LLC |
Method of forming transparent contacts to a p-type GaN layer |
| 6344665, |
Jun 23 2000 |
Arima Optoelectronics Corp. |
Electrode structure of compound semiconductor device |
| 6495862, |
Dec 24 1998 |
SAMSUNG ELECTRONICS CO , LTD |
Nitride semiconductor LED with embossed lead-out surface |
| 6844571, |
Dec 22 1999 |
Lumileds LLC |
III-nitride light-emitting device with increased light generating capability |
| 6847052, |
Jun 17 2002 |
Kopin Corporation |
Light-emitting diode device geometry |
| D521952, |
Feb 23 2004 |
Kabushiki Kaisha Toshiba |
Semiconductor device |
| Date |
Maintenance Fee Events |
n/a
| Date |
Maintenance Schedule |
n/a