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Patent
D645008
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Priority
Nov 08 2010
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Filed
Nov 08 2010
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Issued
Sep 13 2011
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Expiry
Sep 13 2025
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Assg.orig
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Entity
unknown
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8
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27
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n/a
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The ornamental design for a light emitting diode device, as shown and described in the drawings.
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FIG. 1 is a perspective view of a light emitting diode device showing my new design;
FIG. 2 is a top view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a back view thereof;
FIG. 5 is a left view thereof;
FIG. 6 is a right view thereof;
FIG. 7 is a cross-sectional view thereof, take along line 7-7 in FIG. 3.;
FIG. 8 is a cross-sectional view thereof, take along line 8-8 in FIG. 3.;
FIG. 9 is a right side view of thereof; the left side view is a mirror image of the right side view; and,
FIG. 10 is a front view of thereof; the backside view is a mirror image of the front side view.
It will be understood that the dash lines presented in the drawings are for illustration only, and do not form a part of the claimed design.
Shan, Li-Wei, Liu, Wen Huang
Patent |
Priority |
Assignee |
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Jan 21 2011 |
CREE LED, INC |
Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature |
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D675581, |
Jan 21 2011 |
CREE LED, INC |
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May 02 2012 |
ABL IP Holding, LLC |
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Jan 24 2011 |
CREE LED, INC |
Light emitting diode |
D738027, |
Nov 18 2013 |
OLEDWORKS GMBH |
Illuminated OLED panel |
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5652434, |
Apr 28 1993 |
Nichia Corporation |
Gallium nitride-based III-V group compound semiconductor |
6097040, |
Jul 23 1997 |
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Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad |
6153894, |
Nov 12 1998 |
TOYODA GOSEI CO , LTD |
Group-III nitride semiconductor light-emitting device |
6204512, |
Apr 28 1993 |
Nichia Chemical Industries, Ltd. |
Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
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Mar 05 1997 |
Kabushiki Kaisha Toshiba |
Nitride compound light emitting device and method for fabricating same |
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Lumileds LLC |
Method of forming transparent contacts to a p-type GaN layer |
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Nitride semiconductor LED with embossed lead-out surface |
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Feb 23 2004 |
Kabushiki Kaisha Toshiba |
Semiconductor device |
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Light emitting diode device with electrode |
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SEMILEDS OPTOELECTRONICS CO , LTD |
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CREE LED, INC |
LED chip |
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SEMILEDS OPTOELECTRONICS CO , LTD |
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SEMILEDS OPTOELECTRONICS CO , LTD |
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SEMILEDS OPTOELECTRONICS CO , LTD |
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D620460, |
Oct 30 2009 |
SEMILEDS OPTOELECTRONICS CO , LTD |
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D620897, |
Oct 29 2009 |
SEMILEDS OPTOELECTRONICS CO , LTD |
Light emitting diode device |
D624510, |
Oct 30 2009 |
SEMILEDS OPTOELECTRONICS CO , LTD |
Light emitting diode device |
D627747, |
Mar 18 2010 |
Semi LEDs Optoelectronics Co., Ltd. |
Light emitting diode device |
D631017, |
Sep 28 2009 |
Toyoda Gosei Co., Ltd. |
Light emitting diode chip |
D631018, |
Sep 28 2009 |
Toyoda Gosei Co., Ltd. |
Light emitting diode chip |
D633876, |
Oct 30 2009 |
SEMILEDS OPTOELECTRONICS CO , LTD |
Light emitting diode device |
D635525, |
Apr 22 2009 |
CREELED, INC |
LED chip |
Date |
Maintenance Fee Events |
n/a
Date |
Maintenance Schedule |
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