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Patent
D848384
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Priority
Aug 17 2017
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Filed
Aug 17 2017
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Issued
May 14 2019
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Expiry
May 14 2034
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Assg.orig
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Entity
unknown
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1
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22
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n/a
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The ornamental design for a transistor, as shown and described.
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FIG. 1 is a perspective view of a transistor showing my new design;
FIG. 2 is another perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side view thereof;
FIG. 6 is a right side view thereof;
FIG. 7 is a top plan view thereof; and,
FIG. 8 is a bottom plan view thereof.
The broken line showing is for the purpose of illustrating environmental structure only and forms no part of the claimed design.
Feng, Tien-Ching
| Patent |
Priority |
Assignee |
Title |
| 2696574, |
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| 2696575, |
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| 2829257, |
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| 2929753, |
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| 2988652, |
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| 3002100, |
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| 3387286, |
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| 4339765, |
Jun 12 1979 |
Tokyo Shibaura Denki Kabushiki Kaisha |
Transistor device |
| 4370670, |
Apr 11 1979 |
Fujitsu Limited |
Transistor with plural parallel units |
| 4408387, |
Sep 28 1981 |
Fujitsu Limited |
Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask |
| 4590666, |
Sep 28 1981 |
Fujitsu Limited |
Method for producing a bipolar transistor having a reduced base region |
| 4639757, |
Dec 12 1980 |
Hitachi, Ltd. |
Power transistor structure having an emitter ballast resistance |
| 4782378, |
Feb 25 1982 |
FUJI ELECTRIC CO , LTD , NO 1-1, TANABESHINDEN, KAWASAKI-KU, KAWASAKI-SHI, KANAGAWA, JAPAN |
Transistor having integrated stabilizing resistor and method of making thereof |
| 4827322, |
Dec 06 1982 |
Mitsubishi Benki Kabushiki Kaisha |
Power transistor |
| 4835588, |
Mar 10 1978 |
Fujitsu Limited |
Transistor |
| 4860082, |
Jul 08 1984 |
NEC Electronics Corporation |
Bipolar transistor |
| 6043507, |
Sep 24 1997 |
Micron Technology, Inc. |
Thin film transistors and methods of making |
| 9601604, |
Sep 25 2012 |
PST SENSORS PROPRIETARY LIMITED |
Current switching transistor |
| 9748379, |
Jun 25 2015 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO , LTD ; NATIONAL TAIWAN UNIVERSITY |
Double exponential mechanism controlled transistor |
| 20020189083, |
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|
|
| D443253, |
Jul 14 1999 |
Kabushiki Kaisha Toyoda Jidoshokki Seisakusho |
Transistor substrate |
| D524763, |
Mar 08 2004 |
Mitsumi Electric Co., Ltd. |
Transmitting/receiving unit |
| Date |
Maintenance Fee Events |
n/a
| Date |
Maintenance Schedule |
n/a