A method includes aligning a wire with a package body having a contact pad and moving the wire through the package body to form electrical contact with the contact pad.
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1. A method of forming wire connections comprising:
aligning a wire with a package body having a contact pad;
moving the wire through the package body to form electrical contact with the contact pad; and
deforming a tip of the wire during moving the wire as the tip of the wire contacts a rigid carrier.
11. A method of forming wire connections comprising:
arranging wires in a stencil;
aligning the stencil to position the wires above selected contact pads of a stack of multiple routing layers;
moving the wires in the stencil to contact multiple contact pads on different routing layers; and
removing the stencil.
14. An electronics package device comprising:
a wiring layer having a contact pad, the wiring layer formed of a dielectric material; and
a wire extending through the contact pad and the dielectric layer, the contact pad and the dielectric layer both being deformed about the wire, forming a sliding contact between the wire and the contact pad.
20. A device for forming wire connections, the device comprising:
a stencil having multiple openings to align multiple wires above an electronics package;
means for moving the aligned wires into the electronics package to form electrical connections between contact pads and the wires; and
a rigid carrier to deform a tip of one or more of the aligned wires.
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This patent application is a U.S. National Stage Application under 35 U.S.C. 371 from International Application No. PCT/US2015/066766, filed Dec. 18, 2015, published as WO 2017/105502, which is incorporated herein by reference.
Embodiments described herein generally relate vertical connections in integrated circuit packages, and more particularly to use of vertical wire connections for integrated circuit packages.
System in Package (SiP) integration is a major trend in the semiconductor packaging industry to reduce system form factor, costs and increase performance. Typical approaches are side by side (SbS) die arrangements, 3D die stacking (3D) and package on package (PoP) stacking.
Creating vertical interconnects for PoP and 3D is an expensive and space consuming factor. Due to needed production steps (e.g. etching, plating etc.), through silicon vias (TSVs) are very expensive, which makes an introduction for low cost packages critical. Through mold vias (TMVs) are typically realized either via embedded contact bars or laser drilling followed by a metal filling process. Both approaches require quite large design rules (DRs).
The following description and the drawings sufficiently illustrate specific embodiments to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. Portions and features of some embodiments may be included in, or substituted for, those of other embodiments. Embodiments set forth in the claims encompass all available equivalents of those claims.
System in package (SiP) vertical interconnects may be formed by shooting or pressing conductive wires, nails, or screws for example, hereinafter referred to as wires, through a package body. The wires are connected to contact pads at different z-height levels in the package such as by press fits similar to that used in a wirelast through mold via (TMV) interconnects. The so formed vertical interconnects may provide one or more of a space saving, cheap approach with a higher flexibility for connecting components placed in different z-heights. Further advantages, when compared to prior TMV solutions, may include one or more of smaller interconnect pitch, lower process costs, variable interconnect diameters, higher connection flexibility, and low temperature process, enabling connection possibilities for components at low thermal budget.
Compared to Bond-Via Array (BVA) technologies, which utilize a wirebonded interconnect array embedded into a mold compound (MC), wire or nail shooting or pressing is not limited by a ball pitch of a top package previously used to couple to wire extensions. Further, no mold deflash process nor bond pads on a bottom substrate are utilized as in BVA.
Multiple wires may be used to create a fan-out package fixed on the rigid carrier system 150. The wire 110 may be moved by shooting or pressing in various embodiments. Shooting may utilized compressed air to accelerate the wire through a tube with a diameter slightly larger than a diameter of the wire. An amount of force and speed utilized for either method will be a function of the thickness of the wire 110 and the pliability and other characteristics of the materials the wire is being moved through. In some embodiments, the dielectric or other mold material may be partially cured prior to moving the wire through, and then further cured to a final cured state after the wires have been so moved.
In various embodiments, the wire comprises a conductive wire or nail such as for example an Au-wire or Cu-wire with Pd coating. A suitable wire composition may be chosen to allow mechanical intrusion of the contact pad 140 to avoid wire or nail deformation during processing.
As the wire 110 is driven through the contact pad 130, a 360° sliding contact with the contact pad 130 metal is formed, and the wire intrudes into the dielectric material 135 below the contact pad 130 as seen in view 155. The sliding contact in one embodiment is a result of deformation of the contact pad 130, which manifests with the pad 130 about the wire being bent downward along the wire. The dielectric 135 material should not be filled or brittle. One example material comprises polyimide (EtB>10% at 25° C.). Other similar materials may be used. The dielectric 135 may be partially cured to allow for easy wire penetration. Final curing could then be done at a later step.
After the wire 110 has passed the dielectric material as seen in view 160, the wire 110 reaches the adhesion layer 145 which fixes the dielectric material to the carrier system. The wire 110 is then moved through the soft adhesion layer 145 and reaches the surface of the carrier 150 as seen in view 165.
The wire 110 does intrude into the rigid carrier material which may be formed of a rigid material such as steel, carbon, or other suitable rigid material. The kinetic energy of the wire 110 leads to a plastic deformation of the bottom end of the wire as indicated at 175 in the area of the soft adhesion layer 145. This allows formation of a later contact area on one level of all processed wires/nails which can be connected following carrier 150 debonding by a frontside redistribution layer (RDL)-process. On the topside of the package the portion of the wire 110 not moved through the package can be cut slightly above the contact pad 130, or in further embodiments, bent and coupled to another contact pad. To improve a sliding contact resistance, an ultrasonic wave can be coupled into the topside end of the wire as may be typically done for wedge bonding processes.
The same wire movement process, referred to as wire last TMV, can be applied to drive through more stacked contact pad/dielectric layers.
In one embodiment, an additional die may be attached as indicated at 340 in
In some embodiments, different wire thicknesses or materials may be used and individually moved or moved in parallel with a stencil designed to accommodate the various thicknesses. Depending on maximum current requirements single wire or nail interconnects may have diameter variations between 10 μm and 100 μm for example. Other diameters and non-round wire cross sections may be used in further embodiments. A tip of the wire that first penetrates the various structures during movement may be tapered to facilitate movement. The taper may occur toward one side as shown in several of the figures, or the taper may be symmetric about a center axis of the wire, forming a needle like structure. In further embodiments, no taper may be used.
The wires may be formed of Cu or Au or Ag or using specific alloys like specific Al-alloys or FeNi. Other materials may be used in further embodiments. To optimize contact resistance, the metal pads and or wires/nails might contain solder to create a solder joint between wire/nail and metal pad after a reflow process, such as a final ball apply reflow. The solder could be deposited or coated on the pad. Alternatively it could be coated on the wire. Material and geometry tuning allows perfect adaption to the electrical requirements.
Also, note that the wires have varying thickness, with wire 606 being the thickest, enabling it to reliably carry a larger current. The length of each nail can be adapted to the SiP-design to connect e.g. only 2 upper layers but not the bottom routing layer. Nail or wire penetration might alternatively stop in the solder of a solder coated bottom contact pad or might stop inside of the dielectric material below the contact pad. Nail thickness might be increased to drive large peak currents or to use it as a thermal dissipation path.
Depending on process, material and geometry the shape of the bottom wire might change as illustrated in three example ways in
To reduce processing time e g nails can be applied arranged via stencil and then pressed with high force in parallel on substrate and PCB stack. Some advantages of this process for board assembly may include the elimination of the use of reflow processes utilized in prior standard solder joint interconnects which utilize two reflow processes, one after ball attach and one during board assembly reflow process. A further benefit may include the package standoff not depending anymore on solder ball diameter. Package standoff may be directly controlled by applying different glue or adhesion tape thicknesses on package bottomside. Interconnect pitch to PCB can be reduced because solder ball bridging is not an issue with the new method. Wire thickness and material can be adapted for different interconnects inside of one package to address different electrical, thermal or mechanical requirements without impact on package standoff.
To better illustrate the electronic assemblies, electronic packages and methods disclosed herein, a non-limiting list of examples is provided herein:
Example 1 includes a method of forming wire connections including aligning a wire with a package body having a contact pad. The wire is moved through the package body to form electrical contact with the contact pad.
Example 2 includes the subject matter of example 1 wherein moving the wire through the package body forms electrical contact with multiple contact pads at different levels of the package body.
Example 3 includes the subject matter of example 1 wherein the package body comprises dielectric material.
Example 4 includes the subject matter of example 3 wherein the package body comprises an adhesion layer between a top of the package body and the contact pad, and wherein the wire is moved through the contact pad, the dielectric layer, and the adhesion layer to a rigid carrier supporting the package body.
Example 5 includes the subject matter of example 4 and further comprises deforming a tip of the wire during moving the wire as the tip of the wire contacts the rigid carrier.
Example 6 includes the subject matter of example 3 and further comprising curing the dielectric material following the formation of the electrical contact with the contact pad.
Example 7 includes the subject matter of example 1 wherein the wire has a tip with a reduced cross section on a portion of the wire first contacting the body package as the wire is moved through the body package.
Example 8 includes the subject matter of example 1 wherein multiple wires are aligned with respect to multiple contact pads and moved through the package to form electrical contact with respective contact pads.
Example 9 includes the subject matter of example 8 wherein at least one of the respective contact pads is on a different level of the package body.
Example 10 includes the subject matter of any of examples 1-9 wherein the wire comprises gold.
Example 11 includes the subject matter of any of examples 1-9 wherein the wire comprises copper.
Example 12 includes the subject matter of any of examples 1-9 wherein the wire is moved by pressing the wire through the package body.
Example 13 includes the subject matter of examples 1-9 wherein the wire is moved by shooting the wire through the package body.
Example 14 includes a method of forming wire connections including aligning a first wire with an integrated circuit system in package having a first contact pad supported by a first layer of a package body. The first wire is moved through the package body to form electrical contact with the contact pad. A second layer is added to the package body. The method also includes aligning and moving a second wire through the second layer of the package body to form electrical contact with a second contact pad.
Example 15 includes the subject matter of example 14 and further including removing a carrier from the first layer of the package body, flipping the package body, and adding components coupled to the contact pads of the first layer.
Example 16 includes the subject matter of example 15 and further including forming a mold compound about the components.
Example 17 includes the subject matter of any of examples 14-16 and further including bending at least one of the first and second wires to contact a pad of one of the components and forming a mold compound about the components and wires.
Example 18 includes a method of forming wire connections including arranging wires in a stencil, aligning the stencil to position the wires above selected contact pads of a stack of multiple routing layers, moving the wires in the stencil to contact multiple contact pads on different routing layers, and removing the stencil.
Example 19 includes the subject matter of example 18 wherein the wires are moved by applying pressure to a rigid plate contacting the stencil and wires.
Example 20 includes the subject matter of example 19 wherein the wires comprise nails having heads, the method further comprising removing the heads after moving the wires and prior to removing the stencil.
Example 21 includes the subject matter of any of examples 18-20 wherein at least one wire is shorter than other wires such that the shorter wire does not contact a lowest routing layer after the wires have been moved.
Example 22 includes the subject matter of any of examples 18-20 wherein at least one wire is thicker than other wires.
Example 23 includes the subject matter of example 21 wherein the thicker wire is positioned to conduct heat from a package coupled to the routing layers.
Example 24 includes the subject matter of any of examples 18-20 wherein a tip of one of the wires spreads out responsive to being moved to contact one of the contact pads.
Example 25 includes a device formed by any one of examples 1-24.
Example 26 includes an electronics package device including a wiring layer having a contact pad, the wiring layer formed of a dielectric material. A wire extends through the contact pad, the contact pad being deformed about the wire, forming a sliding contact between the wire and the contact pad.
Example 27 includes the subject matter of example 26 wherein the contact pad deformation comprises the contact pad being bent downward about the wire extending through the contact pad.
Example 28 includes the subject matter of example 26 and further comprising multiple wiring layers having multiple contact pads, and wherein the wire extends through multiple contact pads in multiple layers.
Example 29 includes the subject matter of example 26 and further comprising multiple wires, each forming a sliding contact with one or more of the contacts in multiple layers.
Example 30 includes the subject matter of example 29 wherein at least one of the multiple wires is shorter than another of the multiple wires.
Example 31 includes the subject matter of example 29 wherein at least one of the multiple wires is wider than another of the multiple wires.
Example 32 includes the subject matter of example 26 and further comprising a die coupled to the wiring layer.
Example 33 includes the subject matter of example 26 and further comprising a printed circuit board coupled to the wiring layer.
Example 34 includes the subject matter of any of examples 25-32 wherein the wire comprises silver, copper, or gold.
Example 35 includes a device for forming wire connections, the device including a stencil having multiple openings to align multiple wires above an electronics package and means for moving the aligned wires into the electronics package to form electrical connections between contact pads and the wires.
Example 36 includes the subject matter of example 35 wherein the means for moving the aligned wires comprises plate configures to press against the stencil and apply force to the wires.
Example 37 includes the subject matter of example 35 wherein the stencil openings have different widths corresponding to different widths of wires.
The above detailed description includes references to the accompanying drawings, which form a part of the detailed description. The drawings show, by way of illustration, specific embodiments in which the invention can be practiced. These embodiments are also referred to herein as “examples.” Such examples can include elements in addition to those shown or described. However, the present inventors also contemplate examples in which only those elements shown or described are provided. Moreover, the present inventors also contemplate examples using any combination or permutation of those elements shown or described (or one or more aspects thereof), either with respect to a particular example (or one or more aspects thereof), or with respect to other examples (or one or more aspects thereof) shown or described herein.
In this document, the terms “a” or “an” are used, as is common in patent documents, to include one or more than one, independent of any other instances or usages of “at least one” or “one or more.” In this document, the term “or” is used to refer to a nonexclusive or, such that “A or B” includes “A but not B,” “B but not A,” and “A and B,” unless otherwise indicated. In this document, the terms “including” and “in which” are used as the plain-English equivalents of the respective terms “comprising” and “wherein.” Also, in the following claims, the terms “including” and “comprising” are open-ended, that is, a system, device, article, composition, formulation, or process that includes elements in addition to those listed after such a term in a claim are still deemed to fall within the scope of that claim. Moreover, in the following claims, the terms “first,” “second,” and “third,” etc. are used merely as labels, and are not intended to impose numerical requirements on their objects.
The above description is intended to be illustrative, and not restrictive. For example, the above-described examples (or one or more aspects thereof) may be used in combination with each other. Other embodiments can be used, such as by one of ordinary skill in the art upon reviewing the above description.
The Abstract is provided to allow the reader to quickly ascertain the nature of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Also, in the above Detailed Description, various features may be grouped together to streamline the disclosure. This should not be interpreted as intending that an unclaimed disclosed feature is essential to any claim. Rather, inventive subject matter may lie in less than all features of a particular disclosed embodiment. Thus, the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment, and it is contemplated that such embodiments can be combined with each other in various combinations or permutations. The scope of the invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
Wagner, Thomas, Wolter, Andreas, Albers, Sven, Geissler, Christian, Seidemann, Georg, Reingruber, Klaus, Dittes, Marc
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