The present invention provides a method of fabricating a virtual ground EPROM cell in a silicon substrate of p-type conductivity. In accordance with the method, a gate oxide layer is formed on the silicon substrate. This is followed by the formation of a first layer of polysilicon (poly 1). Next, a composite structure comprising oxide-nitride-oxide (ONO) is formed on the first polysilicon layer. Next, a photoresist mask is used to define parallel lines of ONO/poly 1. After etching the ONO/poly 1 to define the parallel lines, an arsenic implant is performed while keeping the photoresist mask in place to define N+ bit lines between the lines of ONO/poly 1. After the photoresist is stripped from the parallel lines of ONO/poly 1, an oxidation step is performed to complete the oxidation of the ONO and to simultaneously grow a differential oxide between the lines of ONO/poly 1. In the subsequent etching of the ONO/poly 1 lines in a stacked etch procedure, the differential oxide overlying the N+ bit lines protects the underlying substrate, thus avoiding interruption ("digging") of N+ bit lines in the EPROM array.
|
1. A method of fabricating a virtual ground EPROM cell in a silicon substrate of p-type conductivity, the method comprising:
(a) forming a gate oxide layer on the silicon substrate; (b) forming a first polysilicon layer on the gate oxide layer; (c) forming a first oxide layer on the first polysilicon layer; (d) forming a nitride layer on the first oxide layer; (e) forming a second oxide layer on the nitride layer, thereby to form a composite layer of oxide-nitride-oxide (ONO) and first polysilicon on the gate oxide layer; (f) forming a mask structure to define parallel lines of ONO/poly 1; (g) etching exposed portions of the ONO/poly 1 to define parallel lines of ONO/poly 1; (h) while maintaining the mask structure in place, forming lines of N-type conductivity in the silicon substrate between the parallel lines of ONO/poly 1; (i) removing the mask structure; and (j) performing a differential oxidation to increase the thickness of the second oxide layer while simultaneously forming oxide over the lines of N-type conductivity whereby the subsequent etching of the parallel lines of ONO/poly 1 in a stacked etch step of the method etches only a portion of the oxide formed over the lines of N-type conductivity, thereby avoiding interruption of the N+ bit lines of the EPROM cell.
9. A method of fabricating a virtual ground EPROM cell in a semiconductor substrate of a first conductivity type, the method comprising the steps of:
(a) forming layer of first dielectric material on the semiconductor substrate; (b) forming a layer of conductive material over the first dielectric material; (c) forming a layer of second dielectric material over the conductive material; (d) forming a mask structure over the second dielectric material to define parallel lines of second dielectric material; (e) etching the second dielectric material and the underlying conductive material to provide a plurality of spaced-apart, parallel lines of second insulating material and underlying conductive material; (f) while maintaining the mask structure in place on the parallel lines of second insulating material and underlying conductive material, forming regions of a conductivity type opposite the first conductivity type in the semiconductor substrate between the parallel lines of second insulating material and underlying conductive material; (g) removing the mask structure from the parallel lines of second insulating material and underlying conductive material; and (h) increasing the thickness of the second dielectric material on the parallel lines while simultaneously forming dielectric material over the regions of opposite conductivity type.
7. A method as in
8. A method as in
10. A method as in
12. A method as in
13. A method as in
|
1. Field of the Invention
The present invention relates to electrically programmable read only memory (EPROM) devices and, in particular, to a process for fabricating a stacked etch, virtual ground EPROM cell without the planarization problems commonly encountered in fabricating such cells.
2. Discussion of the Prior Art
An electrically programmable read only memory (EPROM) device is a non-volatile memory integrated circuit which is used to store binary data. Power can be removed from the EPROM without loss of data. That is, upon reapplying power, the originally stored binary data is retained.
In addition to its data retention capability, an EPROM can also be programmed to store new binary data. Reprogramming is accomplished by first exposing the EPROM to an ultra-violet (UV) light source in order to erase the old binary data. A UV-transparent lid on the packaged EPROM chip allows this erasure to occur. Following erasure, the new binary data is written to the EPROM by deactivating the chip select line in order to switch the EPROM data outputs to inputs. The EPROM address inputs are then set to a starting value, the desire data is connected to the data inputs and the data is written into the data storage register identified by the address inputs. The address inputs are then incremented and the cycle is repeated for each data storage register in the EPROM array.
In an EPROM read operation, the binary data stored in the data storage register identified at the address inputs is connected to the chip's data output buffers. If the EPROM chip select signal is activated, then the binary data from the selected storage register is provided to the databus.
An electrically erasable programmable read only memory (EEPROM) is a variation of the EPROM design wherein binary data is read, written and erased electrically. A single operation erases the selected data storage register. In the case of a so-called "flash" EPROM, all data storage registers in the memory array are electrically erased in a single operation.
FIG. 1A shows a conventional EPROM cell 10. The EPROM cell 10 includes a buried N+ source region 12 and a buried N+ drain region 14 formed in a P-type silicon substrate 16 and separated by a substrate channel region 18. Overlying the channel region 18 is a layer of insulating material 20, typically silicon dioxide. A conductive floating gate 22 is formed on the insulating material 20. Typically, floating gate 22 is formed of polycrystalline silicon (poly 1). Overlying floating gate 22 is a second layer 24 of insulating material, typically, a composite layer of oxide-nitride-oxide (ONO). A conductive control gate 26 is formed on the ONO layer 24. Typically, the control gate 26 is also formed of polycrystalline silicon (poly 2).
A plan view of this so-called "stacked gate" (or "stacked etch") EPROM cell 10 is shown in FIG. 1B. The structure of the standard "T-shaped" cell 10 shown in FIG. 1B derives its "stacked-gate" designation because of the self-aligned etching process which is utilized to form the vertically-aligned control gate 26 and floating gate 22 of the cell 10. That is the edges of the control gate 26 are used to complete the definition of the underlying floating gate 22.
The processing sequence for forming the polysilicon floating gate 22 and the polysilicon control gate line 26 of the stacked gate cell 10 is as follows. Referring to FIG. 1A, first, a layer of polysilicon (poly 1) is formed on the silicon dioxide layer 20. The poly 1 layer is then masked and etched to form the floating gate 22. Next, an ONO layer 24 is grown over the entire structure. This is followed by growth of a second polysilicon layer (poly 2) from which the control gate line 26 will be formed. The poly 2 layer is then masked and etched. The resulting poly 2 control gate line 26 is then used as a self-aligned mask to etch the interpoly ONO 24 and the underlying floating gate 22 to define the final structure of the stacked gate cell 10 shown in FIG. 1A.
Traditionally, reductions in EPROM memory array density have been accomplished by reducing the dimensions of the cell features produced by the photolithographic and etching procedures utilized in fabricating standard T-shaped EPROM cells. The shrinking cell geometries resulting from these process developments have led to corresponding requirements for new isolation schemes in order to accommodate the minimum cell pitch and to develop the sub-micron contacts which must be formed utilizing non-standard techniques.
For example, Hisamune et al, "A 3.6 nM2 Memory Cell Structure for 16MB EPROMs, IEDM 1989, page 583, disclose a process for minimizing EPROM cell pitch utilizing trench isolation of the bit lines and tungsten plugs for bit line contacts. Bergemont et al, "A High Performance CMOS Process for Submicron 16MB EPROM", IEDM 1989, page 591, also disclose techniques for reducing the size of the standard T-shaped EPROM cell.
One way to avoid the special processing requirements associated with the fabrication of high density T-shaped EPROM cell arrays is to use a different type of cell which does not require conventional LOCOS field oxide isolation and contacts in the array.
A three-dimensional schematic diagram of a portion of one such EPROM array is shown in FIG. 2. The FIG. 2 array utilizes planarized oxide over the buried N+ bit lines and bit line isolation to improve array density.
FIGS. 3A-3D show the fabrication process for the FIG. 2 array. Following formation of the poly 1 floating gates, an arsenic implant is utilized to define the buried N+ bit lines. A layer of oxide is then deposited (typically by LPCVD) and then photoresist is spun on. FIG. 3B shows the resulting structure prior to planarization. Next, as shown in FIG. 3C, the surface of the structure is etched back to planarize the oxide between the poly 1 lines. This is followed by formation and definition of an oxide-nitride-oxide (ONO) layer and an overlying second layer of control gate polysilicon (poly 2).
However, the EPROM cell array shown in FIG. 2 also suffers from process difficulties. For example, when etching the residual part of the stack, i.e. the oxides-nitride-oxide (ONO)/poly 1, that portion of the buried N+ bit line which is not covered by poly 1 must have a sufficient silicon dioxide thickness covering it to avoid digging into the bit line when etching the residual poly 1. Otherwise, the N+ bit line may be interrupted.
As stated above, the conventional solution to this bit line "digging" problem is to planarize the oxide between adjacent poly 1 lines. However, this creates three additional problems. First, the plasma etch-back planarization process is extremely complicated. Second, forming a good quality ONO layer over the poly 1 after the etch-back is difficult, since the surface of the poly 1 has been exposed to the plasma silicon dioxide etch-back process. Third, the polysilicon must be implanted at the same time as the buried N+ bit line arsenic implant, which can make it difficult to grow a good quality interpoly oxide and can also lead to problems of data retention reliability.
The present invention provides a method of fabricating a virtual ground EPROM cell in a silicon substrate of P-type conductivity. In accordance with the method, a gate oxide layer is formed on the silicon substrate. This is followed by the formation of a first layer of polysilicon (poly 1). Next, a composite structure comprising oxide-nitride-oxide (ONO) is formed on the first polysilicon layer. Next, a photoresist mask is used to define parallel lines of ONO/poly 1. After etching the ONO/poly 1 to define the parallel lines, an arsenic implant is performed while keeping the photoresist mask in place to define N-type bit lines between the lines of composite ONO and poly 1. After the photoresist is stripped from the parallel lines of ONO/poly 1, an oxidation step is performed to complete the oxidation of the ONO and to simultaneously grow a differential oxide between the N+ bit lines and poly 1. In the subsequent etching of the ONO/poly 1 lines in a stacked etch procedure, the differential oxide overlying the N+ bit lines will protect the underlying silicon substrate against "digging", thus avoiding interruption of N+ bit lines in the EPROM array.
A better understanding of the features and advantages of the present invention will be obtained by reference to the following Detailed Description of the Invention and accompanying drawings which set forth an illustrative embodiment in which the principles of the invention are utilized.
FIG. 1A is a cross-sectional view illustrating a conventional stacked etch EPROM cell.
FIG. 1B is a plan view illustrating the layout of a conventional T-shaped stacked etch EPROM cell.
FIG. 2 is a three dimensional schematic diagram illustrating a portion of an EPROM array fabricated utilizing conventional planarization techniques.
FIGS. 3A-3D illustrate the formation of a conventional EPROM cell utilizing conventional planarization techniques.
FIG. 4 is a cross-sectional view illustrating the initial steps in a planarization process in accordance with the present invention.
FIGS. 5 and 6 are cross-sectional views illustrating additional steps in the planarization process in accordance with the present invention.
FIG. 7 is a cross-sectional view illustrating the final step in the planarization process in accordance with the present invention.
The present invention provides a new thermal process for fabricating a virtual ground EPROM cell that is structurally similar to that described above with respect to FIG. 2. However, the process of the present invention produces oxide planarization between the poly 1 floating gate lines without the problems of the prior art process. That is, the need for an etch-back silicon dioxide plasma step and an arsenic implant into the poly 1 at the time of formation of the N+ bit lines are eliminated.
Referring to FIG. 4, in accordance with the process of the present invention, after growing a 200 Å gate oxide layer 102 on an underlying substrate of P-type <100> silicon 100, a thin polysilicon layer 104, approximately 1000-1500 Å thick, is deposited and then doped in the conventional manner. A first silicon dioxide layer 106 of about 100 Å thickness is then grown on polysilicon layer 104. This is followed by formation of a thin nitride layer 108 about 100 Å thick. Next, the nitride layer 108 is oxidized to generate a top layer 110 silicon dioxide about 10 Å thick, as shown in FIG. 4.
Next, as shown in FIGS. 5 and 6, a poly 1 photoresist mask is used to define parallel lines of the ONO/poly 1. After etching the ONO/poly 1, the structure consists of parallel lines of ONO/poly 1 N+ bit lines are then formed in the substrate by the implantation of arsenic between the ONO/poly 1 lines.
Note that, in accordance with the present invention, the N+ arsenic implant is performed while keeping the photoresist of the poly 1 mask in place. This avoids arsenic implant into the ONO. After the implant, the photoresist is stripped. Also, as shown in FIG. 6, an arsenic implant is avoided in the array periphery utilizing the poly 1 mask; this eliminates the need of the conventional N+ bit line mask.
As shown in FIG. 7, after the photoresist is stripped, an oxidation step is performed to finish the oxidation of the nitride and to generate 30 Å more of silicon dioxide to complete the ONO layer. A 900°C steam oxidation leads to growth of a differential oxidation between the poly 1 lines. At this temperature, the time required to grow 30 Å of silicon dioxide on the nitride leads to a 1000 Å silicon dioxide thickness on the P- silicon substrate. With a ratio of 2/1 differential oxidation, this leads to 2000 Å of silicon dioxide over the N+ bit line, as shown in FIG. 7.
By this technique, the capacitance between the cell's word line (not shown) and the N+ bit line is minimized.
The etching of the ONO/poly 1 during the subsequent stacked etch portion of the process will etch a maximum of 500 Å over the N+ bit line, leaving at least 1500 Å of silicon dioxide in place, thus avoiding interruption ("digging") of the N+ bit line during the etch step.
Thus, a process in accordance with the present invention avoids the planarization step between the poly 1 lines, arsenic implant into the ONO or poly 1 is well controlled, and thermal oxidations only are involved.
It should be understood that various alternatives to the embodiment in the invention described herein may be employed in practicing the invention. It is intended that the following claims define the scope of the invention and that structures and methods within the scope of these claims and their equivalents be covered thereby.
Patent | Priority | Assignee | Title |
10446401, | Nov 29 2017 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
5246874, | Jun 02 1992 | NATIONAL SEMICONDUCTOR CORPORATION, A CORP OF DELAWARE | Method of making fast access AMG EPROM |
5290721, | Jun 28 1991 | Winbond Electronics Corporation | Method of making a stacked semiconductor nonvolatile memory device |
5304503, | Aug 20 1991 | National Semiconductor Corporation | Self-aligned stacked gate EPROM cell using tantalum oxide control gate dielectric |
5384272, | Jun 28 1994 | Cypress Semiconductor Corporation | Method for manufacturing a non-volatile, virtual ground memory element |
5397726, | Feb 04 1992 | National Semiconductor Corporation | Segment-erasable flash EPROM |
5402372, | Jun 01 1992 | National Semiconductor Corporation | High density EEPROM cell array with improved access time and method of manufacture |
5453393, | Jun 01 1992 | National Semiconductor Corporation | Method for forming a high density EEPROM cell array with improved access time |
5566106, | Feb 17 1994 | National Semiconductor Corporation | Method for reducing the spacing between the horizontally-adjacent floating gates of a flash EPROM array |
5621233, | Sep 16 1994 | Freescale Semiconductor, Inc | Electrically programmable read-only memory cell |
5622881, | Oct 06 1994 | SAMSUNG ELECTRONICS CO , LTD | Packing density for flash memories |
5643813, | Oct 06 1994 | International Business Machines Corporation | Packing density for flash memories by using a pad oxide |
5707884, | Jun 01 1992 | SGS-Thomson Microelectronics, S.r.l. | Process for fabricating a contactless electrical erasable EPROM memory device |
5723350, | Jun 01 1992 | SGS-THOMSON MICROELECTRONICS, S R L | Process for fabricating a contactless electrical erasable EPROM memory device |
5892257, | Oct 06 1994 | SAMSUNG ELECTRONICS CO , LTD | Packing density for flash memories |
5897353, | Dec 24 1996 | Hyundai Electronics Industries Co., Ltd. | Method of forming dielectric film of semiconductor memory device |
5899713, | Oct 28 1997 | International Business Machines Corporation | Method of making NVRAM cell with planar control gate |
6211548, | Oct 25 1996 | Metal-gate non-volatile memory cell | |
6218227, | Oct 25 1999 | MONTEREY RESEARCH, LLC | Method to generate a MONOS type flash cell using polycrystalline silicon as an ONO top layer |
6348380, | Aug 25 2000 | Micron Technology, Inc | Use of dilute steam ambient for improvement of flash devices |
6492227, | Jul 24 2000 | International Business Machines Corporation | Method for fabricating flash memory device using dual damascene process |
6897112, | Oct 01 2001 | Infineon Technologies AG | Method for fabricating an integrated semiconductor configuration with the aid of thermal oxidation, related semiconductor configuration, and related memory unit |
6949789, | Aug 25 2000 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Use of dilute steam ambient for improvement of flash devices |
7432546, | Aug 25 2000 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Apparatus having a memory device with floating gate layer grain boundaries with oxidized portions |
7585725, | Aug 25 2000 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Use of dilute steam ambient for improvement of flash devices |
7838921, | Sep 22 2006 | Polaris Innovations Limited | Memory cell arrangements |
7989870, | Aug 25 2000 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Use of dilute steam ambient for improvement of flash devices |
8294192, | Aug 25 2000 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Use of dilute steam ambient for improvement of flash devices |
9865711, | Jan 21 2014 | Cypress Semiconductor Corporation | Methods to integrate SONOS into CMOS flow |
9893172, | Jan 21 2014 | LONGITUDE FLASH MEMORY SOLUTIONS LTD | Methods to integrate SONOS into CMOS flow |
Patent | Priority | Assignee | Title |
4795719, | May 15 1984 | United Module Corporation | Self-aligned split gate eprom process |
4833514, | May 01 1985 | TEXAS INSTRUMENTS INCORPORATED, A CORP OF DE | Planar FAMOS transistor with sealed floating gate and DCS+N2 O oxide |
4849369, | Aug 21 1986 | Commissariat a l'Energie Atomique | Method of making an EPROM memory cell |
4861730, | Jan 25 1988 | Catalyst Semiconductor, Inc.; CATALYST SEMICONDUCTOR, INC , A CA CORP | Process for making a high density split gate nonvolatile memory cell |
4892840, | Sep 11 1987 | Texas Instruments Incorporated | EPROM with increased floating gate/control gate coupling |
5028553, | Jun 03 1988 | Texas Instruments Incorporated | Method of making fast, trench isolated, planar flash EEPROMS with silicided bitlines |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Apr 18 1991 | National Semiconductor Corporation | (assignment on the face of the patent) | / | |||
May 20 1991 | BERGEMONT, ALBERT M | National Semiconductor Corporation | ASSIGNMENT OF ASSIGNORS INTEREST | 005735 | /0437 |
Date | Maintenance Fee Events |
Dec 29 1992 | ASPN: Payor Number Assigned. |
Sep 20 1995 | M183: Payment of Maintenance Fee, 4th Year, Large Entity. |
Jun 23 1999 | ASPN: Payor Number Assigned. |
Jun 23 1999 | RMPN: Payer Number De-assigned. |
Dec 08 1999 | M184: Payment of Maintenance Fee, 8th Year, Large Entity. |
Dec 09 2003 | M1553: Payment of Maintenance Fee, 12th Year, Large Entity. |
Date | Maintenance Schedule |
Jun 09 1995 | 4 years fee payment window open |
Dec 09 1995 | 6 months grace period start (w surcharge) |
Jun 09 1996 | patent expiry (for year 4) |
Jun 09 1998 | 2 years to revive unintentionally abandoned end. (for year 4) |
Jun 09 1999 | 8 years fee payment window open |
Dec 09 1999 | 6 months grace period start (w surcharge) |
Jun 09 2000 | patent expiry (for year 8) |
Jun 09 2002 | 2 years to revive unintentionally abandoned end. (for year 8) |
Jun 09 2003 | 12 years fee payment window open |
Dec 09 2003 | 6 months grace period start (w surcharge) |
Jun 09 2004 | patent expiry (for year 12) |
Jun 09 2006 | 2 years to revive unintentionally abandoned end. (for year 12) |