An energy dispersive x-ray detector assembly has a detector element of a high-purity silicon substrate with a pair of electrodes, one on either side of the silicon substrate, to create an depletion layer in the silicon substrate when an electric field is created between the electrodes to enable the detection of x-rays. The silicon substrate has a resistivity of at least 10 kΩ·cm and a thickness in the incident direction of the x-rays of approximately 3 to 5 mm. A refrigerator system, such as a closed cycle gas circulation refrigerator, can be used to cool the detector element to enable the provision of a compact detector assembly.
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1. In an energy dispersive z-ray detector assembly, the improvement comprising:
a detector element having a resistivity of approximately 30 kΩ·cm; a refrigerator system for cooling the detector element; and means for cooling the detector element during an x-ray detection mode of operation.
5. In an energy dispersive x-ray detector assembly, the improvement of a detector element consisting of:
a silicon substrate has a resistivity of at least 10 kΩ·cm; and a pair of electrodes, one on either side of the silicon substrate to create a depletion layer in the silicon substrate when an electric field is created between the electrodes to enable the detection of x-rays.
9. A compact energy dispersive x-ray detector assembly comprising:
a detector element consisting of a silicon substrate having a resistivity of at least 10 kΩ·cm and a thickness of approximately 3 to 5 mm relative to an incident direction of the x-rays; a first electrode on one side of the detector element; a second electrode on the other side of the detector element; means for providing a voltage differential between the first electrode and the second electrode to form an depletion layer inside the silicon to detect x-rays; means for cooling the detector element during a measurement mode of operation; and means for determining the amount of x-rays contacting the detector element.
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1. Field of the Invention
The present invention relates to an energy dispersive semiconductor X-ray detector (hereinafter called "EDS detector") which can be used, for example, in combination with an electron microscope to provide an energy dispersive type elemental analyzer such as an X-ray micro analyzer for measuring characteristic X-rays excited by electron beams and emitted from a sample, or a fluorescent X-ray analyzer that measures X-ray excitation.
2. Description of Related Art
EDS detectors have been used in energy dispersive type elemental analyzers requiring high resolution and they have incorporated a lithium drift type silicon semiconductor X-ray detector (Si(Li) detector). The advantages of this type of Si(Li) detector reside in its ability to provide high resolution, capability to simultaneously measure a large number of characteristic X-rays, and determine a spectrum of energy. A problem that has occurred, however, in a Si(Li) detector is that the lithium ions that are impregnated into the silicon to create an intrinsic detection region in the conventional detectors, however, may also continue inside the silicon as a result of thermal diffusion, thereby the characteristics of the detection can deteriorate and it is necessary to utilize a constant cooling system, for example, with liquid nitrogen, to combat this problem of thermal drift.
Reference can be had to FIG. 5 to show a conventional EDS detector wherein a cryostat 51 is provided so that it can ensure that the Si(Li) detection element 55 will be isolated from the external atmosphere. The cryostat 51 is connected to a Dewar 53 that contains liquid nitrogen 52 and a cold finger 54 having an L-letter shaped configuration is connected to and thermally linked to the Dewar 53, for example, by welding at one end, and at the other end, it supports not only the Si(Li) detection element 55, but also a FET 56 to provide a preamplification for an output signal. A window 57 is provided to permit X-rays 58 to penetrate through the window and enter the Si(Li) detection element 55. The inside of the cryostat can be maintained at a vacuum to help isolate the Si(Li) detection element 55 from atmospheric temperature problems.
The advantages of this conventional EDS detector shown in FIG. 5 is that it can prevent the thermal diffusion of lithium and decrease noise at the initial stages of the Si(Li) detection element 55 and the FET 56 as a result of the cooling by the liquefied nitrogen 52. A disadvantage is that it requires daily maintenance in order to replace the liquid nitrogen 52 that may evaporate.
Attempts have been made to replace the liquid nitrogen by using a small-size gas circulation system refrigerator such as a Joule-Thomson system or a pulse-tube type system. While such small-size gas circulation system refrigerators provide sufficient refrigeration capacity without a mechanical drive at its low temperature generation portion and thereby provides low vibration, easy maintenance and high reliability over a longtime period of operation, it still requires an AC power supply and any interruption of the power supply, such as a power failure or the need to transit the apparatus, can cause deterioration of the properties of the detection elements. To prevent this occurrence, it is frequently required that a standby power supply, such as batteries, be also installed, with a result of increase in size and cost.
Accordingly, there is still a desire within this industry to improve the performance of semiconductor X-ray detector systems.
The present invention provides an improved EDS detector that maintains excellent resolution while being both compact and economical.
The present invention his discovered that a high-purity silicon detection element can be configured to be used as an X-ray detection member in the EDS detector and can be particularly designed to accommodate a cooling of the X-ray detection member by a small-size gas circulation type refrigerator. The high-purity silicon detection element comprises a high-purity n-type Si wafer of, for example, 2-5 mm in. thickness and preferably with a specific resistivity of 30 kΩ·cm or greater to provide a detection layer or an depletion layer when subject to an appropriate electric field. By configuring such a high-purity silicon wafer into a detection element with an intrinsic exhaustion region of sufficient thickness, it is possible to measure the incident X-rays even if the conventional Li ion drift is not being used. The detection layer permits the incoming X-rays to ionize the silicon atoms in the depletion layer and the effect on the energy applied to create the electric field is a measure of the energy of the X-rays.
Additionally, the high-purity silicon detection element will not be subject to a deterioration of characteristics even if a small-size gas circulation refrigerator does not operate due to a power failure and cooling is unable to be obtained with a rise in temperature in the vacuum. Thus, it is possible to do away with any standby power supply, such as batteries, etc., and the equipment can be maintained in a compact configuration since it is not necessary to use the conventional Dewar for maintaining an application of liquid nitrogen.
FIG. 1 is a schematic cross-sectional view showing the configuration of an EDS detector according to the present invention;
FIG. 2 is a schematic cross-sectional partial view showing the operative portion of the EDS detector arrangement;
FIG. 3(A) through FIG. 3(D) are respective view showing an example of manufacturing a high-purity silicon X-ray detection element for use in an EDS detector;
FIG. 4 is a schematic illustration showing one example of a configuration of equipment incorporating an EDS detector;
FIG. 5 is a schematic cross-sectional view showing a conventional EDS detector with a Dewar; and
FIG. 6 is a schematic of a detector system and pre-amplifier circuit.
The following description is provided to enable any person skilled in the art to make and use the invention and sets forth the best modes contemplated by the inventor of carrying out his invention. Various modifications, however, will remain readily apparent to those skilled in the art, since the general principles of the present invention have been defined herein specifically to provide an improved high-purity silicon detector for measuring incident X-rays.
Referring to FIGS. 1 through 3, features of the present invention are provided. FIG. 1 schematically discloses a configuration of an EDS detector 1 according to the present invention. An L-letter shaped cryostat 2 is utilized to isolate the detector from an external atmosphere, while at the same time holding the operative elements in a vacuum. A pulse tube refrigerator is installed at the upper end portion of the cryostat 2, and a cryogenic portion 3b is extended from the main body portion of 3a to the inside of the cryostat 2. The pulse tube refrigerator 3 is provided with sufficient refrigeration capacity, e.g., 10W, while at the same time isolating any mechanical drive section vibrations from the low temperature generating section to thereby achieve a simple construction as well as maintaining an extremely low vibration structure. Thus, the pulse tube refrigerator 3 ensures high reliability for a long term operation with easy maintenance. Sealing members 4 are used to seal the pulse tube refrigerator 3 to the cryostat 2 to isolate the cryogenic portion 3b.
Mounted within the cryostat 2 is a cold finger 5 which comprises a material having excellent heat conductivity such as copper, etc. The cold finger 5 is formed in, for example, an L-letter shape and has one end thermally connected to the cryogenic portion 3b of the pulse tube refrigerator 3. A detection element section 6 is mounted to the other end of the cold finger 5 so that it is thermally connected to the cold finger 5. An X-ray detection element 7 which forms the principal component member of the detection element section 6 is provided on the front surface of the cold finger 5 adjacent an X-ray window 9 to permit X-rays 8 to penetrate and enter the detector element section 6.
Reference can be made to FIG. 2 to disclose an enlarged view of the configuration of the detection element section 6. A detection element holder 10 is provided with an open configuration adjacent the X-ray window 9 so that it can mount the X-ray detection element 7 between parallel support members. The element holder 10 is installed to be directly thermally connected to the cold finger 5. The X-ray detection element 7 consists of a high-purity Si wafer having from the incident X-ray side, a high voltage electrode 21, a p electrode, 7c, a detector element proper 7b, an electrode or a signal take-out electrode 7a. A low noise FET package 11 is mounted behind X-ray detection element 7 and is also thermally connected to the cold finger 5. A FET 12 is connected to the signal take-out electrode 7a by means of a wire connection. The FET 12 is known in the industry and therefore is not illustrated in detail. It is connected to external equipment by an appropriate signal line not shown. Both the element holder 10 and the low noise FET package 11 comprise material with good thermal conductivity. The high-purity Si wafer or detector element 7 can be, for example, from 2-5 mm in thickness and will have a resistivity of at least 10 kΩ·cm and preferably 30 to 40 kΩ·cm as indicative of the purity of the silicon substrate.
An example of a pre-amplifier circuit can be seen in FIG. 6. The pre-amplifier circuit includes a FET 20 with a capacitor Cf and does not have a direct current-type operating point. Instead, when the pre-amplifier output reaches a predetermined constant value, light from a light-emitting diode 22 is directed onto a joint of the FET 20 by a level sensor and driver circuit 24 to reset the FET 20 so that the operating range of the pre-amplifier circuit becomes linear, thereby providing a pulsed optical feedback-type circuit with better energy resolution and totaling characteristics than a resistive feedback-type circuit. Ideally, the initial pre-amplifier circuit, along with the Si detector 26, is cooled to a temperature of approximately -200°C in order to reduce thermal noise and increase energy resolution, e.g., with liquid nitrogen.
FIGS. 3(A) through 3(D) discloses the different stages of manufacturing the X-ray detection element 7 from a base material such as a high-purity Si wafer with the specific resistivity of 10 kΩ·cm or greater. On one surface of the high specific resistance base material of silicon an N' electrode a is formed, see FIG. 3(A). In providing the formation of the N' electrode a, a high temperature procedure, such as a phosphorus diffusion procedure, can be used because there is no fear of Li diffusion in the pure silicon substrate during the metal deposition to provide the surface barrier. Subsequently, the X-ray detection element 7 can be formed into the top hat shape shown in FIG. 3(B) by an application of ultrasonic energy to cut the pure Si wafer. This shape helps to minimize the leakage of current. Referring to FIG. 3(C), a metal material such as gold, etc., can be deposited as to form the P electrode c on the surface barrier.
Finally, the side surfaces d shown in FIG. 3(D) can be protected to maintain the desired performance despite any temperature cycling. Thus, the surface protection that is selected not only improves the temperature-resistant cycle characteristics so that they do not deteriorate even when the X-ray detection element 7 is cooled or recovers to room temperature, but further has the effect to alleviate the influence of the surface condition of the side subject to any internal electrical field when voltage is applied. The particular protection material does not form a part of the present invention.
In an EDS detector 1 in the above embodiment, the choice of a component comprising a high-purity silicon detection element having a preferred specific resistivity of 40 kΩ·cm can be used as the X-ray detection element 7 and thereby provide an intrinsic area with sufficient thickness even if the drift of Li is not present.
An ultra-pure silicon detector of the present invention has a diode structure with a preferred specific resistivity of 40 kΩ·cm. By applying voltages to the electrodes at both ends of the silicon body, an depletion layer develops inside the silicon to create a sensitive layer. The sensitive layer can convert the energy from incoming X-rays into electrical signals and the X-rays which enter the depletion layer causes the silicon atoms to become ionized. Groupings of electron/hole pairs form, and the energy is dissipated. The amount of energy required to form a single electron/hole pair is approximately 3.9 eV in the case of silicon, so that the number of electron/hole pairs formed equals: ##EQU1## Thus, the number of groupings is proportional to the energy of the incoming X-rays. To be more precise, it is more correct to state "the energy lost by the detector" rather than "the energy of the incoming X-rays," but in practical terms, there is almost no difference between the two.
Accordingly, the electrical charge generated at this time is:
(1)×q (coulomb)
(q: 1.60×10-19 coulomb)
For example, the electrical charge generated by a single A1 K α X-ray (1486 eV) is: ##EQU2## With Si detectors, a bias voltage (around -500--1000V is applied, and the electric field thus formed causes the charge inside the detector to be generated within about 10 nanoseconds.
Additionally, the X-ray detection element 7 comprising this high-purity silicon detection element does not cause deterioration of characteristics even when temperature raises in the vacuum and therefore, unlike the conventional Si(Li) detector, it is only required to be cooled by a pulse tube refrigerator 3 when a measurement cycle is carried out. Consequently, a standby power supply, such as batteries, etc., are not required to be installed. In the EDS detector 1, the X-ray detection element 7 is designed to be cooled by the pulse tube refrigerator 3, which can be of a compact configuration since the conventional Dewar containing liquid nitrogen is not necessary.
In a conventional EDS detector utilizing an Si(Li) detector, the Si(Li) element must be constantly ventilated by an ion pump or periodically ventilated by an vacuum pump in an electron microscope configuration because the performance deteriorates when the vacuum of the cryostat starts to degrade in a room temperature condition. The ion pump has to be backed up by a battery to also cope with any possible power failure and, of course, the battery has a limited service life and capacity, and is not able to be used if there is a long-term power failure.
FIG. 4 shows a schematic arrangement of an element analyzer combining the EDS detector 1 of the present invention with a small-size pulse tube system as a refrigerator for a scanning electron microscope 13. A signal processor section 14 of the element analyzer supplies power to the EDS detector 1 and at the same time processes signals based on the detection signals from the EDS detector 1 attached to the scanning electron microscope 13. A connecting pipe 16 extends from the EDS detector 1 to a valve selector unit 15. A compressor 17 for providing the refrigeration is also connected to the valve selector unit 15 via a high-pressure helium piping system 18 and a low-pressure helium piping 19 to generate a cooling effect for the EDS detector 1. A controller 20 can control both the EDS detector 1 and the operation of the compressor 17 and can provide a display of the X-ray measurements. For example, the controller 20 can ensure that the compressor 17 need only be operated to provide an appropriate temperature during a measurement mode of operation.
An element analyzer configured in this manner has an extremely compact overall configuration and has a further advantage of being free from the necessity of using liquid nitrogen as the cooling system.
It should be appreciated that the present invention is not limited to the above embodiments and components mentioned herein, but can also use a small-size gas circulation type refrigerators of other systems such as the Joule-Thomson system for a refrigerator, and in such an event, similar effects can be achieved.
The EDS detector of the present invention, by adopting an X-ray detection element comprising a high-purity silicon detection element, can provide excellent resolution, while at the same time does not require the constant cooling of conventional systems. The EDS detector of the present invention need only be cooled by a small-size gas circulation refrigerator during the measurement cycle. Consequently, it can achieve advantages in both operability and maintainability as well as compactness as compared to conventional EDS detectors. Thus, the use of an X-ray detection element that can be cooled without using liquid nitrogen is particularly suitable to applications where there is a problem of handling liquid nitrogen such as in clean rooms.
Those skilled in the art will appreciate that various adaptations and modifications of the just-described preferred embodiment can be configured without departing from the scope and spirit of the invention. Therefore, it is to be understood that, within the scope of the appended claims, the invention may be practiced other than as specifically described herein.
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