An integrated circuit device structure having probe pad extensions in electrical communication with the wire bond pads and a method for performing failure analysis thereon. The invention provides an improved probing system for wire bond packages such that neither the wire nor the wire bond from the pads on the chip surface need be removed during testing procedures. Included in the integrated circuit device is a plurality of conductive pads having a first area for receiving a wire bond and a second area for receiving a probe, wherein the second area abuts, and is an electrical communication with the first area.
|
7. A method for performing failure analysis on an integrated circuit after packaging is completed and a fault has been detected, wherein the integrated circuit comprises wire bond pads each having a pad extension formed substantially integrally and simultaneously with the pad, wherein said pad extensions are formed extending from a central chip location, and wherein said pad extensions are adjacent to a portion of the pad having a wire bond, said method comprising the steps of:
removing a portion of a lead frame packaging to expose the wire bond pads; probing the pad extension of a first wire bond pad of the wire bond pads, with the wire bond remaining affixed to said first wire bond pad; and providing a probe ring structure wherein the wire bond pads are electrically connected to at least one corresponding probe ring pad of the probe ring structure via at least one probe.
1. A metohod for forming an integrated circuit device having wire bond pads that are easily probed, comprising the steps of:
providing a mounting surface and an integrated circuit chip thereon, said integrated circuit chip having a plurality of wire bond pads within a single layer of the integrated circuit chip; providing a plurality of pad extensions electrically connected to said wire bond pads, each said pad extension adapted to receive a probe; and providing, a probe ring structure on the integrated circuit chip, wherein each wire bond pad has a first area for receiving a wire bond, wherein the first areas and pad extensions are integrally formed around a central chip location, and wherein the first areas and pad extensions are in substantially coplanar electrical communication with each other, and wherein the pad extension is connected to at least one corresponding probe ring pad of the probe ring structure via at least one probe.
2. The method of
completing a packaging of the integrated circuit chip, including bonding the wire bond pads of the integrated circuit chip to a lead frame with lead wires; testing the integrated circuit chip; and upon the detection of a fault, performing the steps of: removing a portion of the packaging to expose at least one wire bond pad; and placing the probe on said pad extension connected to the exposed wire bond pad to analyze the fault. 3. The method of
4. The method of
testing the integrated circuit by placing at least one probe on one of the wire bond pad's pad extension, prior to packaging.
5. The method of
6. The method of
|
This is a divisional application of co-pending application, Ser. No. 09/159,446, filed on Sep. 24, 1998, entitled INTEGRATED CIRCUIT HAVING WIREBOND PADS SUITABLE FOR PROBING.
The present invention generally relates to a structure and method for testing integrated circuit devices, and more particularly, to a structure and method for performing failure analysis on an integrated circuit.
The ability to perform failure analysis on integrated circuit (IC) divices is an important aspect of ensuring quality during the ongoing development life cycle of an IC. The process of analyzing faults may need to occur any where from early design stages of an IC right through to a point where an end user discovers a failure. Once the reason for the failure is detected, the IC design can be modified in order to correct the problem.
The process of performing fault analysis on an IC typically requires the removal of at least a portion of the packaging that makes up the IC device in order to expose the necessary electrical components. One of the most common IC packages includes the use of a chip carrier or lead frame to hold the much smaller chip or die, which contains the functional circuitry. Electrical connections between the chip and lead frame are typically accomplished with a wire bonding system where wires, typically formed of gold or aluminum, connect wire bond pads on the chip to metal pads on the lead frame.
Once the chip pads 12 are exposed, probes can be set in contact with the pads 12 in order to determine the cause of the failure. Unfortunately, an initial polishing step must be performed in order to remove most of the wire 16 and wire bond 14 from the pad 12. Without this removal step, it is very difficult to position the required number of probes in place. Furthermore, if the wire 16 and wire bond 14 are left in place, the probe would not directly contact the pad 12, and therefore potentially cause a faulty test result. Accordingly, under previous fault isolation techniques, it has been necessary to remove the ball bonds before attempting to probe for failures.
Unfortunately, in addition to adding an extra step, the removal of the wires and wire bonds from the chip limits the type and extent of testing that can be performed. For example, connections on and between chip pads cannot be verified. Thus, without an improved structure and method for performing fault analysis, the deficiencies of the prior art will remain.
The present invention overcomes the deficiencies of the prior art by including a structure and method for providing chips with probe pad extensions in electrical communication with the chip's pads. Accordingly, during a failure analysis process, probing can occur without removing the wire and/or wire bond from the pads on the chip surface. The invention therefore provides an integrated circuit comprising a plurality of conductive pads having a first area for receiving a wire bond and a second area for receiving a probe, wherein the second area abuts, and is in electrical communication with the first area.
In addition, a method for forming an integrated circuit device having wire bond pads that are easily probed is provided and comprises the steps of: (1) creating each wire bond pad within a single layer of the integrated circuit device during a fabrication process; and (2) forming each wire bond pad with a first area for receiving a wire bond and a second area for receiving a probe, wherein the first and second area are integrally formed substantially simultaneously, and wherein the first and second areas are in electrical communication with each other.
Finally, a method is provided for performing failure analysis on an integrated circuit after packaging is completed and a fault has been detected, wherein the integrated circuit comprises wire bond pads each having a pad extension formed adjacent to a portion of the pad having a wire bond, wherein the method comprises the steps of: (1) removing a portion of a lead frame packaging to expose the wire bond pads; and (2) probing the pad extension of at least one of the wire bond pads with the wire bond remaining affixed to the at least one wire bond pad.
It is therefore an advantage of the present invention to provide a system for more easily performing tests oil an integrated circuit device.
It is therefore a further advantage of the present invention to provide a system for performing more robust tests on an integrated circuit device.
It is therefore a further advantage of the present invention to provide a system for performing failure analysis tests without removing wires and wire bonds from the pads of a chip.
These and other features and advantages of this invention will be more readily understood from the following detailed description of the various aspects of the invention taken in conjunction with the accompanying drawings in which:
Referring now to the drawings,
Referring now to
Referring now to
In an exemplary emibodiment of the present invention the entire wire bond pad is created within a single layer of the integrated circuit device during the fabrication process. In this manner, no additional cost or processes are added to the manufacturing of the chip in order to add this additional functionality. Thus, the wire bond pad will be formed with a first area for receiving the wire bond, and a second area for receiving the probe, wherein the first and second area will be integrally formed substantially simultaneously during the fabrication process. The implementation of the pad extensioin is therefore accomplished during the same fabrication step as the pad itself. Accordingly, the only alteration necessary during the fabrication process may be modification to the mask used to define the pad configuration on the layer at which the pads reside. The remaining fabrication steps (e.g., applying photoresist, developing photoresist, and the etching process) need not be altered.
In addition, a novel method for performing failure analysis on the integrated circuit after packaging is completed and a fault has detected, is described. Referring to
Referring to
While invention has been described in detail herein in accordance with certain exemplary embodiments thereof, many modifications and changes therein may be affected by those skilled in the art. Accordingly, it is intended by the appended claims to proper all such modifications and changes as fall within the true spirit and scope of the invention.
Patent | Priority | Assignee | Title |
11664343, | Dec 16 2020 | SK Hynix Inc. | Semiconductor package including stacked semiconductor chips |
6580092, | Jan 15 2001 | Renesas Electronics Corporation | Semiconductor chip, semiconductor device, and process for producing a semiconductor device |
6713881, | May 29 2000 | Texas Instruments Incorporated | Semiconductor device and method of manufacturing same |
6762431, | Dec 28 1998 | SOCIONEXT INC | Wafer-level package with test terminals |
6803303, | Jul 11 2002 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Method of fabricating semiconductor component having encapsulated, bonded, interconnect contacts |
6900551, | May 21 2002 | Renesas Electronics Corporation | Semiconductor device with alternate bonding wire arrangement |
6906418, | Jul 11 2002 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Semiconductor component having encapsulated, bonded, interconnect contacts |
7071487, | Dec 28 1998 | SOCIONEXT INC | Wafer-level package having test terminal |
7129573, | Jul 11 2002 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | System having semiconductor component with encapsulated, bonded, interconnect contacts |
7256116, | Jul 11 2002 | U S BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT | Method for fabricating semiconductor components having encapsulated, bonded, interconnect contacts on redistribution contacts |
7353479, | Jan 31 2005 | Faraday Technology Corp. | Method for placing probing pad and computer readable recording medium for storing program thereof |
7399990, | Dec 28 1998 | SOCIONEXT INC | Wafer-level package having test terminal |
7482675, | Jun 24 2005 | GLOBALFOUNDRIES Inc | Probing pads in kerf area for wafer testing |
7642551, | Dec 28 1998 | SOCIONEXT INC | Wafer-level package having test terminal |
8227917, | Oct 08 2007 | Taiwan Semiconductor Manufacturing Company, Ltd | Bond pad design for fine pitch wire bonding |
8253420, | Dec 04 2009 | Volterra Semiconductor Corporation | Integrated electrical circuit and test to determine the integrity of a silicon die |
8816342, | Jan 27 2011 | Longitude Licensing Limited | Semiconductor device |
9142469, | Jan 27 2011 | Longitude Licensing Limited | Semiconductor device |
Patent | Priority | Assignee | Title |
3717800, | |||
4223337, | Sep 16 1977 | Nippon Electric Co., Ltd. | Semiconductor integrated circuit with electrode pad suited for a characteristic testing |
4241360, | Oct 01 1976 | Galileo Electro-Optics Corp. | Series capacitor voltage multiplier circuit with top connected rectifiers |
4403240, | Oct 26 1979 | Hitachi, Ltd. | Integrated circuit with at least three ground pads |
4447857, | Dec 09 1981 | International Business Machines Corporation | Substrate with multiple type connections |
4990996, | Dec 18 1987 | ZiLOG, Inc. | Bonding pad scheme |
5155577, | Jan 07 1991 | INTERNATIONAL BUSINESS MACHINES CORPORATION A CORPORATION OF NY | Integrated circuit carriers and a method for making engineering changes in said carriers |
5442241, | Jul 26 1993 | Kabushiki Kaisha Toshiba | Bump electrode structure to be coupled to lead wire in semiconductor device |
5455460, | Apr 05 1991 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having complimentary bonding pads |
5473196, | Feb 02 1993 | Matra Marconi Space France | Semiconductor memory component comprising stacked memory modules |
5517127, | Jan 09 1995 | International Business Machines Corporation; International Business Machines Corp | Additive structure and method for testing semiconductor wire bond dies |
5554940, | Jul 05 1994 | SHENZHEN XINGUODU TECHNOLOGY CO , LTD | Bumped semiconductor device and method for probing the same |
5731709, | Jan 26 1996 | SHENZHEN XINGUODU TECHNOLOGY CO , LTD | Method for testing a ball grid array semiconductor device and a device for such testing |
5783868, | Sep 20 1996 | Integrated Device Technology, Inc. | Extended bond pads with a plurality of perforations |
5854513, | Jul 14 1995 | LG DISPLAY CO , LTD | Semiconductor device having a bump structure and test electrode |
5856687, | Jul 04 1996 | Renesas Electronics Corporation | Semiconductor device with connected source electrode pads at diagonal corners |
5886414, | Sep 20 1996 | Integrated Device Technology, Inc. | Removal of extended bond pads using intermetallics |
5923047, | Apr 21 1997 | Bell Semiconductor, LLC | Semiconductor die having sacrificial bond pads for die test |
6025733, | Sep 09 1997 | Renesas Electronics Corporation | Semiconductor memory device |
JP56124240, | |||
JP57122542, | |||
JP5815251, |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
Apr 16 1999 | International Business Machines Corporation | (assignment on the face of the patent) | / |
Date | Maintenance Fee Events |
Nov 18 2005 | M1551: Payment of Maintenance Fee, 4th Year, Large Entity. |
Mar 15 2010 | REM: Maintenance Fee Reminder Mailed. |
Aug 06 2010 | EXP: Patent Expired for Failure to Pay Maintenance Fees. |
Date | Maintenance Schedule |
Aug 06 2005 | 4 years fee payment window open |
Feb 06 2006 | 6 months grace period start (w surcharge) |
Aug 06 2006 | patent expiry (for year 4) |
Aug 06 2008 | 2 years to revive unintentionally abandoned end. (for year 4) |
Aug 06 2009 | 8 years fee payment window open |
Feb 06 2010 | 6 months grace period start (w surcharge) |
Aug 06 2010 | patent expiry (for year 8) |
Aug 06 2012 | 2 years to revive unintentionally abandoned end. (for year 8) |
Aug 06 2013 | 12 years fee payment window open |
Feb 06 2014 | 6 months grace period start (w surcharge) |
Aug 06 2014 | patent expiry (for year 12) |
Aug 06 2016 | 2 years to revive unintentionally abandoned end. (for year 12) |