A method of achieving a variable resolution on a field emission display including the step of addressing a cathode half-pixel region of an emitter line of the field emission display, wherein the emitter line is segmented into a fixed number of cathode sub-pixel regions, each cathode sub-pixel region being defined as a portion of the emitter line between two adjacent gate wires of a plurality of gate wires of a gate frame that pass above the emitter line, wherein the cathode half-pixel region is defined as a portion of the emitter line occupying portions of two adjacent cathode sub-pixel regions, wherein providing the appearance of more than the fixed number of cathode sub-pixel regions.
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11. A variable resolution field emission display comprising:
means for addressing a cathode half-pixel region of an emitter line of the field emission display, wherein the emitter line is segmented into a fixed number of cathode sub-pixel regions, each cathode sub-pixel region being defined as a portion of the emitter line between two adjacent gate wires of a plurality of gate wires of a gate frame that pass above the emitter line, wherein the cathode half-pixel region is defined as a portion of the emitter line occupying portions of two adjacent cathode sub-pixel regions, wherein providing the appearance of more than the fixed number of cathode sub-pixel regions.
1. A method of achieving a variable resolution on a field emission display comprising:
addressing a cathode half-pixel region of an emitter line of the field emission display, wherein the emitter line is segmented into a fixed number of cathode sub-pixel regions, each cathode sub-pixel region being defined as a portion of the emitter line between two adjacent gate wires of a plurality of gate wires of a gate frame that pass above the emitter line, wherein the cathode half-pixel region is defined as a portion of the emitter line occupying portions of two adjacent cathode sub-pixel regions, wherein providing the appearance of more than the fixed number of cathode sub-pixel regions.
16. A variable resolution field emission display comprising:
means for addressing at least one cathode half-pixel region of a plurality of emitter lines of the field emission display, wherein each emitter line is segmented into a fixed number of cathode sub-pixel regions, each cathode sub-pixel region being defined as a portion of the emitter line between two adjacent gate wires of a plurality of gate wires of a gate frame that pass above the plurality of emitter lines, wherein each of the at least one cathode half-pixel region is defined as a portion of the emitter line occupying portions of two adjacent cathode sub-pixel regions, wherein providing the appearance of more than the fixed number of cathode sub-pixel regions.
6. A method of achieving a variable resolution on a field emission display comprising:
addressing at least one cathode half-pixel region of a plurality of emitter lines of the field emission display, wherein each emitter line is segmented into a fixed number of cathode sub-pixel regions, each cathode sub-pixel region being defined as a portion of the emitter line between two adjacent gate wires of a plurality of gate wires of a gate frame that pass above the plurality of emitter lines, wherein each of the at least one cathode half-pixel region is defined as a portion of the emitter line occupying portions of two adjacent cathode sub-pixel regions, wherein providing the appearance of more than the fixed number of cathode sub-pixel regions.
20. A method of achieving a variable resolution on a field emission display comprising:
defining a first resolution of the field emission display based upon a fixed number of cathode sub-pixel regions of a fixed number of emitter lines of a cathode substrate of the field emission display; defining a respective cathode sub-pixel region as a portion of a respective emitter line below and in between two adjacent gate wires passing over the respective emitter line; defining a second resolution of the field emission display based upon the fixed number of the cathode sub-pixel regions and a plurality of cathode half-pixel regions of the fixed number of the emitter lines of the cathode substrate of the field emission display; and defining a respective cathode half-pixel region as a portion of the respective emitter line occupying a portion of two adjacent cathode sub-pixel regions and appearing as being in between the two adjacent cathode sub-pixel regions.
25. A method of achieving a variable resolution on a field emission display comprising:
addressing one or more of a plurality of cathode sub-pixel regions of an emitter line of the field emission display, wherein the emitter line is segmented into the plurality of cathode sub-pixel regions; causing an electron emission from the one or more of the plurality of cathode sub-pixel regions; illuminating one or more of a plurality of anode sub-pixel regions of a phosphor line of the field emission display, wherein the phosphor line is segmented into the plurality of anode sub-pixel regions, wherein a first resolution is defined based upon the plurality of anode sub-pixel regions; addressing one or more of a plurality of cathode half-pixel regions of the emitter line of the field emission display, wherein respective ones of the plurality of cathode half-pixel regions occupy portions of respective pairs of the plurality of cathode sub-pixel regions and appear to be in between the respective pairs of the plurality of cathode sub-pixel regions; causing an electron emission from the one or more of the plurality of cathode half-pixel regions; and illuminating one or more of a plurality of anode half-pixel regions of the phosphor line of the field emission display, wherein respective ones of the plurality of anode half-pixel regions occupy portions of respective pairs of the plurality of anode sub-pixel regions and appear to be in between the respective pairs of the plurality of anode sub-pixel regions, wherein a second resolution is defined based upon the plurality of anode sub-pixel regions and the plurality of anode half-pixel regions.
17. A method of achieving a variable resolution on a field emission display comprising:
addressing a cathode half-pixel region of an emitter line of the field emission display, the addressing comprising: applying a positive voltage to a respective gate wire of a plurality of gate wires of a gate frame with respect to the emitter line; and applying a negative voltage to two gate wires adjacent to the respective gate wire with respect to the emitter line, wherein releasing electrons from the cathode half-pixel region of the emitter line; wherein the emitter line is segmented into a fixed number of cathode sub-pixel regions, each cathode sub-pixel region being defined as a portion of the emitter line between two adjacent gate wires of a plurality of gate wires of a gate frame that pass above the emitter line, wherein the cathode half-pixel region is defined as a portion of the emitter line occupying portions of two adjacent cathode sub-pixel regions, wherein providing the appearance of more than the fixed number of cathode sub-pixel regions; and illuminating an anode half-pixel region of a phosphor line of the field emission display corresponding to the cathode half-pixel region of the emitter line, wherein the phosphor line is segmented into a fixed number of anode sub-pixel regions, each anode sub-pixel region being defined as a portion of the phosphor line corresponding to a respective cathode sub-pixel region, wherein the anode half-pixel region is defined as a portion of the phosphor line occupying portions of two adjacent anode sub-pixel regions, wherein providing the appearance of an additional anode sub-pixel region in between the two adjacent anode sub-pixel regions.
2. The method of
3. The method of
applying a positive voltage to a respective gate wire with respect to the emitter line; and applying a negative voltage to two gate wires adjacent to the respective gate wire with respect to the emitter line, wherein releasing electrons from the cathode half-pixel region of the emitter line.
4. The method of
5. The method of
illuminating an anode half-pixel region of a phosphor line of the field emission display corresponding to the cathode half-pixel region of the emitter line, wherein the phosphor line is segmented into a fixed number of anode sub-pixel regions, each anode sub-pixel region being defined as a portion of the phosphor line corresponding to the portion of the emitter line between the two adjacent gate wires of the gate frame, wherein the anode half-pixel region is defined as a portion of the phosphor line occupying portions of two adjacent anode sub-pixel regions, wherein providing the appearance of more than the fixed number of anode sub-pixel regions.
7. The method of
8. The method of
applying a respective positive voltage to respective gate wires with respect to corresponding ones of the plurality of emitter lines; and applying a respective negative voltage to respective adjacent gate wires that are adjacent to the respective gate wires with respect to the corresponding ones of the plurality of emitter lines, wherein releasing electrons from respective cathode half-pixel regions of the plurality of emitter lines.
9. The method of
10. The method of
illuminating at least one anode half-pixel region of a plurality of phosphor lines of the field emission display corresponding to the at least one cathode half-pixel region of the plurality of emitter lines, wherein each of the plurality of phosphor line is segmented into a fixed number of anode sub-pixel regions, each anode sub-pixel region being defined as a portion of the phosphor line corresponding to the portion of the emitter line between the two adjacent gate wires of the gate frame, wherein the anode half-pixel region is defined as a portion of the phosphor line occupying portions of two adjacent anode sub-pixel regions, wherein providing the appearance of more than the fixed number of anode sub-pixel regions.
12. The display of
13. The display of
means for applying a positive voltage to a respective gate wire with respect to the emitter line; and means for applying a negative voltage to two gate wires adjacent to the respective gate wire with respect to the emitter line, wherein releasing electrons from the cathode half-pixel region of the emitter line.
14. The display of
15. The display of
means for illuminating an anode half-pixel region of a phosphor line of the field emission display corresponding to the cathode half-pixel region of the emitter line, wherein the phosphor line is segmented into a fixed number of anode sub-pixel regions, each anode sub-pixel region being defined as a portion of the phosphor line corresponding to the portion of the emitter line between the two adjacent gate wires of the gate frame, wherein the anode half-pixel region is defined as a portion of the phosphor line occupying portions of two adjacent anode sub-pixel regions, wherein providing the appearance of more than the fixed number of anode sub-pixel regions.
18. The method of
19. The method of
21. The method of
22. The method of
23. The method of
24. The method of
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This patent document relates to field emission display (FED) devices described in the following patent documents filed concurrently herewith. The related patent documents, all of which are incorporated herein by reference, are:
U.S. patent application Ser. No. 09/877,443, of Russ, et al.; entitled FIELD EMISSION DISPLAY UTILIZING A CATHODE FRAME-TYPE GATE AND ANODE WITH ALIGNMENT METHOD;
U.S. patent application Ser. No. 09/877,512, of Russ, et al.; entitled METHOD FOR CONTROLLING THE ELECTRIC FIELD AT A FED CATHODE SUB-PIXEL;
U.S. patent application Ser. No. 09/877,379, of Russ, et al.; entitled METHOD FOR MAKING WIRES WITH A SPECIFIC CROSS SECTION FOR A FIELD EMISSION DISPLAY;
U.S. patent application Ser. No. 09/877,496, of Russ, et al.; entitled METHOD FOR ALIGNING FIELD EMISSION DISPLAY COMPONENTS;
U.S. patent application Ser. No. 09/877,509, of Russ, et al.; entitled CARBON CATHODE OF A FIELD EMISSION DISPLAY WITH IN-LAID ISOLATION BARRIER AND SUPPORT;
U.S. patent application Ser. No. 09/877,510, of Russ, et al.; entitled and METHOD FOR DRIVING A FIELD EMISSION DISPLAY;
U.S. patent application Ser. No. 09/877,371, of Russ, et al.; entitled CARBON CATHODE OF A FIELD EMISSION DISPLAY WITH INTEGRATED ISOLATION BARRIER AND SUPPORT ON SUBSTRATE;
1. Field of the Invention
The present invention relates generally to flat panel displays (FPDs), and more specifically to field emission displays (FEDs). Even more specifically, the present invention relates to the structural design of field emission displays (FEDs).
2. Discussion of the Related Art
A field emission display (FED) is a low power, flat cathode ray tube type display that uses a matrix-addressed cold cathode to produce light from a screen coated with phosphor materials.
The anode plate 104 includes a transparent substrate 116 upon which is formed an anode 118. Various phosphors are formed on the anode 118 and oppose the respective electron emitters 112, for example, a red phosphor 120, a green phosphor 122 and a blue phosphor 124, each phosphor generally referred to as an anode sub-pixel.
The FED 100 operates by selectively applying a voltage potential between cathodes of the cathode substrate 106 and the gate electrode 114, which causes selective emission from electron emitters 112. The emitted electrons are accelerated toward and illuminate respective phosphors of the anode 118 by applying a proper potential to a portion of the anode 118 containing the selected phosphor. It is noted that one or more electron emitters may emit electrons at a single phosphor.
Additionally, in order to allow free flow of electrons from the cathode plate 102 to the phosphors and to prevent chemical contamination (e.g., oxidation of the electron emitters), the cathode plate 102 and the anode plate 104 are sealed within a vacuum. As such, depending upon the dimensions of the FED, e.g., structurally rigid spacers (not shown) are positioned between the cathode plate 102 and the anode plate 104 in order to withstand the vacuum pressure over the area of the FED device.
In another conventional FED design illustrated in
Advantageously, the conventional FED provides a relatively thin display device that can achieve CRT-like performance. However, the conventional FED is limited by the pixelation of the device. For example, since there are a fixed number of electron emitters 112 and phosphors aligned therewith, the resolution of the conventional FED is fixed. Furthermore, the manufacture of conventional FEDs has proven difficult and expensive. Additionally, while driving the conventional FED, i.e., applying the proper potential between the gate electrode and the electron emitters 112, cross-talk is a common problem.
The present invention advantageously addresses the needs above as well as other needs by providing methods of achieving variable resolution using a field emission display (FED) having a novel structural design.
In one embodiment, the invention can be characterized as a method of achieving a variable resolution on a field emission display and a means for accomplishing the method, the method comprising the step of: addressing a cathode half-pixel region of an emitter line of the field emission display, wherein the emitter line is segmented into a fixed number of cathode sub-pixel regions, each cathode sub-pixel region being defined as a portion of the emitter line between two adjacent gate wires of a plurality of gate wires of a gate frame that pass above the emitter line, wherein the cathode half-pixel region is defined as a portion of the emitter line occupying portions of two adjacent cathode sub-pixel regions, wherein providing the appearance of more than the fixed number of cathode sub-pixel regions.
In another embodiment, the invention can be characterized as a method of achieving a variable resolution on a field emission display and a means for accomplishing the method, the method comprising the step of: addressing at least one cathode half-pixel region of a plurality of emitter lines of the field emission display, wherein each emitter line is segmented into a fixed number of cathode sub-pixel regions, each cathode sub-pixel region being defined as a portion of the emitter line between two adjacent gate wires of a plurality of gate wires of a gate frame that pass above the plurality of emitter lines, wherein each of the at least one cathode half-pixel region is defined as a portion of the emitter line occupying portions of two adjacent cathode sub-pixel regions, wherein providing the appearance of more than the fixed number of cathode sub-pixel regions.
In a further embodiment, the invention may be characterized as a method of achieving a variable resolution on a field emission display comprising the steps of: addressing a cathode half-pixel region of an emitter line of the field emission display, the addressing comprising: applying a positive voltage to a respective gate wire of a plurality of gate wires of a gate frame with respect to the emitter line; and applying a negative voltage to two gate wires adjacent to the respective gate wire with respect to the emitter line, wherein releasing electrons from the cathode half-pixel region of the emitter line; wherein the emitter line is segmented into a fixed number of cathode sub-pixel regions, each cathode sub-pixel region being defined as a portion of the emitter line between two adjacent gate wires of a plurality of gate wires of a gate frame that pass above the emitter line, wherein the cathode half-pixel region is defined as a portion of the emitter line occupying portions of two adjacent cathode sub-pixel regions, wherein providing the appearance of more than the fixed number of cathode sub-pixel regions; and illuminating an anode half-pixel region of a phosphor line of the field emission display corresponding to the cathode half-pixel region of the emitter line, wherein the phosphor line is segmented into a fixed number of anode sub-pixel regions, each anode sub-pixel region being defined as a portion of the phosphor line corresponding to a respective cathode sub-pixel region, wherein the anode half-pixel region is defined as a portion of the phosphor line occupying portions of two adjacent anode sub-pixel regions, wherein providing the appearance of an additional anode sub-pixel region in between the two adjacent anode sub-pixel regions.
In yet another embodiment, the invention may be characterized as a method of achieving a variable resolution on a field emission display comprising the steps of: defining a first resolution of the field emission display based upon a fixed number of cathode sub-pixel regions of a fixed number of emitter lines of a cathode substrate of the field emission display; defining a respective cathode sub-pixel region as a portion of a respective emitter line below and in between two adjacent gate wires passing over the respective emitter line; defining a second resolution of the field emission display based upon the fixed number of the cathode sub-pixel regions and a plurality of cathode half-pixel regions of the fixed number of the emitter lines of the cathode substrate of the field emission display; and defining a respective cathode half-pixel region as a portion of the respective emitter line occupying a portion of two adjacent cathode sub-pixel regions and appearing as being in between the two adjacent cathode sub-pixel regions.
In a further embodiment, the invention can be characterized as a method of achieving a variable resolution on a field emission display comprising the step of: addressing one or more of a plurality of cathode sub-pixel regions of an emitter line of the field emission display, wherein the emitter line is segmented into the plurality of cathode sub-pixel regions; causing an electron emission from the one or more of the plurality of cathode sub-pixel regions; illuminating one or more of a plurality of anode sub-pixel regions of a phosphor line of the field emission display, wherein the phosphor line is segmented into the plurality of anode sub-pixel regions, wherein a first resolution is defined based upon the plurality of anode sub-pixel regions; addressing one or more of a plurality of cathode half-pixel regions of the emitter line of the field emission display, wherein respective ones of the plurality of cathode half-pixel regions occupy portions of respective pairs of the plurality of cathode sub-pixel regions and appear to be in between the respective pairs of the plurality of cathode sub-pixel regions; causing an electron emission from the one or more of the plurality of cathode half-pixel regions; and illuminating one or more of a plurality of anode half-pixel regions of the phosphor line of the field emission display, wherein respective ones of the plurality of anode half-pixel regions occupy portions of respective pairs of the plurality of anode sub-pixel regions and appear to be in between the respective pairs of the plurality of anode sub-pixel regions, wherein a second resolution is defined based upon the plurality of anode sub-pixel regions and the plurality of anode half-pixel regions
The above and other aspects, features and advantages of the present invention will be more apparent from the following more particular description thereof, presented in conjunction with the following drawings wherein:
Corresponding reference characters indicate corresponding components throughout the several views of the drawings.
The following description is not to be taken in a limiting sense, but is made merely for the purpose of describing the general principles of the invention. The scope of the invention should be determined with reference to the claims.
According to several embodiments of the invention, an improved field emission display (FED) is provided which advantageously employs linear cathode emitters on a cathode substrate and corresponding linear phosphors on an anode plate. Furthermore, the FED also includes a frame-type gate having linear gate wires positioned above and crossing over respective linear cathode emitters. Advantageously, the linear structure of the emitters, phosphors, and gate wires enables simplified manufacturing and alignment of the components of the FED. Additionally, this linear structure also provides an analog-like variable resolution not provided in conventional FEDs by addressing half-pixels. As such, an FED is provided with higher resolution and improved clarity and brightness in comparison to conventional fixed pixel FEDs.
Referring to
The ribs 404 have a low aspect ratio and form barriers that separate emitter lines 406 from each other in order to provide field isolation and to reduce the spread of electrons emitted from the emitter lines 406. Furthermore, the ribs 404 are used to provide mechanical support for gate wires of a gate frame as further described below. The ribs 404 comprise a dielectric or non-conducting material that may be adhered to the cathode substrate 402. Alternatively, the ribs 404 may be applied to the cathode substrate 402. In another embodiment, a dielectric layer may be formed over the cathode substrate 402 and then etched back to form the ribs 404.
The emitter lines 406 are in contrast to the known art, which use conical emitters having sharp points separated from adjacent conical emitters by the structure of the dielectric layer, e.g., the first dielectric layer 108, as shown in
Referring next to
Referring next to
Referring next to
Furthermore, the gate frame 602 of this embodiment does not have to be precisely aligned with respective electron emitters in both x and y directions, as does the conventional gate electrode over emitter tips. The gate frame 602 only need be simply positioned over the emitter lines 406 such that the gate wires 604 intersect the plane of the emitter lines but do not contact the emitter lines 406. In this configuration, the gate wires 604 define cathode sub-pixels regions on the respective emitter lines 406 as portions of the emitter lines in between two adjacent gate wires 604.
Referring next to
Advantageously, in this configuration, the gate wires 604 are used to define portions of the emitter lines 406 into cathode sub-pixel regions. Thus, a respective portion of a respective emitter line positioned in between two adjacent gate wires is generally defined as a cathode sub-pixel region.
The designs of
Referring next to
In manufacture, the gate frame 602 is aligned and sealed onto the cathode substrate 402 and the anode frame 902 is aligned and sealed onto the gate frame 602. Advantageously, since the electron emitters are in the form of emitter lines 406 and the gate wires 604 are positioned over the emitter lines 406 perpendicular to the direction of the emitter lines, the gate frame 602 is not required to be aligned precisely in either x or y direction, e.g., the gate frame should be positioned so that the gate wires cross over the emitter lines. What is important according to this embodiment is that the emitter lines align with the phosphor lines (not shown) on the anode plate. This is in contrast to known FEDs in which the conventional gate electrode must precisely align with the conical electron emitters in both the x and y directions. This is why the conventional gate electrode is formed as a layer integral with the cathode substrate and the emitter wells are then cut out of the gate electrode. Thus, the conventional FED will have precise alignment of the emitter wells of the gate electrode and the emitters of the cathode substrate in both x and y directions.
In order to properly align the emitter lines of the cathode substrate 402 with the phosphor lines of the anode plate 902, alignment barriers are used according to one embodiment of the invention. For example, in this embodiment, a first alignment barrier 904 is adhered to the top surface of the cathode substrate 402. The first alignment barrier 904 is a corner piece or corner chuck that is sized such that an exterior dimension of the gate frame 602 will fit flush within the inner dimensions of the first alignment barrier 904. Once the first alignment barrier 904 is secured in position on the cathode substrate 402, the gate frame 602 is positioned on the cathode substrate 402 and against the first alignment barrier 904 with an appropriate sealing material (e.g., frit) in between. In one embodiment, the first alignment barrier 904 is not intended to be removed and becomes a part of the FED. It is noted that the first alignment barrier 904 allows the gate wires of the gate frame 602 to be positioned to cross over the emitter lines.
The anode plate 902 is then aligned with the cathode plate 402 and the gate frame 602 such that the phosphor lines (on the anode plate 902) are substantially aligned with the emitter lines on the cathode substrate 402 below. It is noted that the phosphor lines only need to precisely align with the emitter lines in a single direction, e.g., the x direction, as opposed to precise alignment in both the x and y directions as required in conventional FEDs. In order to align the anode plate 902 on the gate frame 602 such that the phosphor lines align with the emitter lines, a second alignment barrier 906 is secured on a top surface of the gate frame 602 and is sized to fit flush with a portion of the exterior dimension of the anode plate 902 within its inner dimension. In this embodiment, the second alignment barrier 906 is formed to fit a corner of the anode plate 902. The anode plate 902 is then positioned on the gate frame 602 and flush against the second alignment barrier 906 with an appropriate sealing material (e.g., frit) placed therebetween. Again, in this embodiment, the second alignment barrier 906 is not intended to be removed and becomes a part of the FED.
Next, the entire assembly, including the cathode plate, the gate frame 602 and the anode plate 902 is held upright at an angle such that the gate frame 602 rests completely flush against the first alignment barrier 904 and the anode plate rests completely flush against the second alignment barrier 906 while the components are vacuum sealed together. This process is similar to the sealing of the funnel and faceplate of a conventional CRT, although this CRT sealing process uses alignment frames that do not become an integral component of the display device once the sealing is complete. In contrast, the first and second alignment barriers 904 and 906 are not removed after alignment and become a part of the FED.
It is noted that the alignment barriers are embodied as corner pieces or chucks; however, the alignment barriers may be formed in separate pieces and may be designed to fit flush against two or more sides of the gate frame 604 and/or the anode plate 902. For example, the first and second alignment barriers 904 and 906 may each comprise two separate straight alignment pieces positioned to act as a corner piece or corner chuck. It is noted that it is not required that these separate straight alignment pieces actually meet at a corner, but only that the alignment pieces be positioned to properly align the gate frame 604 and the anode plate 902.
The first and second alignment barriers 904 and 906 provide a simple and easy method of aligning and controlling the position of the main components of the FED together during fabrication. It is noted that although not required, in this embodiment, the first alignment barrier 904 should be carefully attached to the cathode substrate 402 so that the position of the gate frame 602 is generally in the same orientation on the cathode substrate 402. This may assist in the placement of the second alignment barrier 906 so that the anode plate 902 can be aligned above the cathode plate 402. Thus, and regardless of how carefully the gate frame 602 is aligned above the cathode plate 402, the second alignment barrier 906 should be carefully attached to the gate frame 602 such that the phosphor lines will align with the emitter lines precisely in the desired direction (i.e., the x direction).
Referring next to
In operation, by selectively applying a voltage potential to a respective emitter line 406 and one or more gate wires 604, selected portions of the emitter line 406 will be caused to emit electrons toward and illuminate a respective portion of the phosphor line 1002 formed on the anode plate above. Furthermore, as is similarly done in conventional pixelated FEDs, in order to affect the brightness of the illuminated portion of the phosphor lines, a potential is also applied to a metalized anode material to accelerate the electron emission toward the phosphor lines 1002.
Advantageously, the linear structure of the emitter lines 406, gate wires 604 and the phosphor lines 1002 enables a variable resolution FED device as is further described below, which is a contrast from known pixelated FEDs. Furthermore, in comparison to conventional FEDs, the FEDs of several embodiments of the invention will be brighter than conventional FEDs since more surface area of the anode plate 902 is taken up by phosphor material. That is, the phosphor lines 1002 occupy more surface area of the anode plate 902 that individual phosphor dots on a conventional FED. Furthermore, depending on the physical dimensions of the FED, it is noted that the FED device may also incorporate spacers (not shown) that will prevent the anode plate 902 from collapsing on the cathode plate 402. These spacers may be implemented as one or more thin wall segments evenly spaced across the cathode plate (preferably parallel to the ribs, trenches, or other embodiment of the isolation barriers). Alternatively, these spacers may be implemented as support pillars that are evenly spaced across the cathode substrate.
Referring next to
Referring next to
Referring next to
In
To further illustrate the variable resolution aspect of the FED according to several embodiments of the invention, by simply following the addressing and driving techniques of
Advantageously, by using the addressing and driving techniques as shown in
Referring next to
Furthermore, by choosing the emitter material for the emitter lines carefully, the strength of the electric field 1102 should be significantly less than the strength of the electric field of the conventional FED in order to cause adequate electron emission. For example, according to one embodiment, the strength of the electric field 1102 is measured in terms of volts per distance (e.g., volts/μm) from the gate wire 604 to the surface of the emitter line 406. For example, using a carbon-based emitter material, the electric field strength for adequate electron emission is about 4 volts/μm. For example, if the gate wires 604 are 0.1 μm from the surface of the emitter line 406, then an electric field 1102 having a strength of 0.4 volts is sufficient, in comparison to a conventional FED which requires an electric field strength of about 100 volts/μm. It is noted that depending on the specific emitter material, the electric field strength necessary may be anywhere in between about 4 and 100 volts/μm. As is already described, in order to reduce the spread of electrons, a focusing electrode 204 is used in the conventional FED. In contrast, and according to one embodiment, the electron emission 1104 is optionally controlled using peripheral gate wires as described above. According to another embodiment of the invention, the actual cross sectional shape of the gate wire 604 itself may be controlled during manufacture in order to reduce the spread of electrons, e.g., to produce the desired substantially straight electron emission 1104 of FIG. 13A. It has been determined that the cross section of the gate wires 604 has an impact on the electric field 1102 produced, which affects the electron emission. This is further explored below.
Referring next to
Referring next to
Referring next to
While the invention herein disclosed has been described by means of specific embodiments and applications thereof, numerous modifications and variations could be made thereto by those skilled in the art without departing from the scope of the invention set forth in the claims.
Barger, Jack, Russ, Benjamin Edward
Patent | Priority | Assignee | Title |
6603256, | Mar 30 1999 | Kabushiki Kaisha Toshiba | Field emission type display |
6624590, | Jun 08 2001 | Sony Corporation; Sony Electronics Inc. | Method for driving a field emission display |
6663454, | Jun 08 2001 | Sony Corporation; Sony Electronics Inc. | Method for aligning field emission display components |
6682382, | Jun 08 2001 | Sony Corporation; Sony Electronics Inc. | Method for making wires with a specific cross section for a field emission display |
6747416, | Apr 16 2002 | Sony Corporation; Sony Electronics, Inc. | Field emission display with deflecting MEMS electrodes |
6756730, | Jun 08 2001 | Sony Corporation; Sony Electronics Inc. | Field emission display utilizing a cathode frame-type gate and anode with alignment method |
6791278, | Apr 16 2002 | Sony Corporation; Sony Electronics Inc. | Field emission display using line cathode structure |
6873118, | Apr 16 2002 | Sony Corporation; Sony Electronics Inc. | Field emission cathode structure using perforated gate |
6885145, | Jun 08 2001 | Sony Corporation; Sony Electronics, Inc. | Field emission display using gate wires |
6940219, | Jun 08 2001 | Sony Corporation; Sony Electronics Inc. | Field emission display utilizing a cathode frame-type gate |
6989631, | Jun 08 2001 | Sony Corporation; Sony Electronics Inc. | Carbon cathode of a field emission display with in-laid isolation barrier and support |
7002290, | Jun 08 2001 | Sony Corporation; Sony Electronics Inc. | Carbon cathode of a field emission display with integrated isolation barrier and support on substrate |
7012582, | Nov 27 2002 | Sony Corporation; Sony Electronics Inc. | Spacer-less field emission display |
7071629, | Mar 31 2003 | Sony Corporation; Sony Electronics Inc.; Sony Electronics INC | Image display device incorporating driver circuits on active substrate and other methods to reduce interconnects |
7118439, | Jun 08 2001 | Sony Corporation; Sony Electronics Inc. | Field emission display utilizing a cathode frame-type gate and anode with alignment method |
Patent | Priority | Assignee | Title |
3665241, | |||
5528103, | Jan 31 1994 | Canon Kabushiki Kaisha | Field emitter with focusing ridges situated to sides of gate |
5565742, | Feb 25 1991 | PIXTECH, INC , A CORPORATION OF CALIFORNIA | Electronic fluorescent display |
5649847, | Nov 21 1994 | Canon Kabushiki Kaisha | Backplate of field emission device with self aligned focus structure and spacer wall locators |
6064148, | May 21 1997 | SAMSUNG ELECTRONICS CO , LTD | Field emission device |
6094001, | Jul 07 1998 | MOTOROLA SOLUTIONS, INC | Field emission device having a focusing structure and method of fabrication |
6377002, | Sep 15 1994 | PIXTECH, INC , A CORPORATION OF CALIFORNIA | Cold cathode field emitter flat screen display |
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