A method for tracking change in temperature of Uniaxial or biaxial Anisotropic samples utilizing polarized electromagnetic radiation.
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9. A method detecting and tracking temperature change of a sample comprising the steps of:
a) providing a sample which demonstrates biaxial anisotropy in that the ordinary (no) and extraordinary (ne) indicies of refraction are not equal, said sample further having a depth (d) directed perpendicular to said surface;
b) while said sample is at a first temperature applying a polarized spectroscopic electromagnetic beam to said surface along a locus such that it experiences birefringence, and reflects from said sample;
c) monitoring the reflected electromagnetic radiation and therefrom effectively determining a first plot of (no−ne)(d) vs wavelength;
d) changing the temperature of said sample and similarly effectively determining a second plot of (no−ne)(d) vs wavelength; and
e) detecting change in the first and second plots, and interpreting said change in terms of temperature change.
1. A method detecting and tracking temperature change of a sample comprising the steps of:
a) providing a sample which presents with an optical axis oriented normal to a surface thereof and which demonstrates uniaxial anisotropy in that the ordinary (no) and extraordinary (ne) indicies of refraction are not equal, said ordinary (no) index of refraction being substantially parallel to said surface and said extraordinary (ne) index of refraction being substantially perpendicular to said surface, said sample further having a depth (d) directed perpendicular to said surface;
b) while said sample is at a first temperature applying a polarized spectroscopic electromagnetic beam to said surface at an oblique to said surface such that it reflects from said sample and such that it experiences birefringence;
c) monitoring the reflected electromagnetic radiation and therefrom effectively determining a first plot of (no−ne,)(d) vs wavelength;
d) changing the temperature of said sample and similarly effectively determining a second plot of (no−ne)(d) vs wavelength; and
e) detecting change in the first and second plots, and interpreting said change in terms of temperature change.
4. A method detecting and tracking temperature change of a sample comprising the steps of:
a) providing a sample which presents with an optical axis oriented parallel to a surface thereof and which demonstrates uniaxial anisotropy in that the ordinary (no) and extraordinary (ne) indicies of refraction are not equal, said ordinary (no) and extraordinary (ne) indicies of refraction being at ninety degrees to one another in a plane substantially parallel to said surface, said sample having a depth (d) directed substantially perpendicular to said surface;
b) while said sample is at a first temperature applying a polarized incident beam of spectroscopic electromagnetic radiation to said surface other than along a direction coincident with that of either the ordinary (no) or the extraordinary (ne) index of refraction such that it experiences birefringence;
c) monitoring the output spectroscopic electromagnetic radiation therefrom and effectively determining a first plot of (no−ne)(d) vs wavelength;
d) changing the temperature of said sample and similarly effectively determining a second plot of (no−ne)(d) vs wavelength; and
e) detecting change in the first and second plots, and interpreting said change in terms of temperature change.
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This Application Claims Benefit of Provisional Application Ser. No. 60/479,047 Filed Jun. 18, 2003.
This invention relates to monitoring of temperature of samples, and more particularly to tracking change in Temperature of Uniaxial or Biaxial Anisotropic Samples utilizing Polarized Electromagnetic Radiation.
It is well known to apply Ellipsometry to characterize Physical and Optical properties of Samples. It is also known that while Temperature changes affect Samples, detection of said changes thereof using electromagnetic radiation is often difficult. For instance, plots of Optical Constants vs. wavelength often change very little with temperature.
A known Patent which describes monitoring Temperature of a sample using a Rotating Compensator Ellipsometer is U.S. Pat. No. 6,596,404 to Wei et al.
Other Patents found in a Search for key-words (Ellipsometry and Temperture) are:
A paper of relevance is that by Balmer et al., titled “Substrate Temperature Reference Using SiC Absorption Edge Measured by In Situ Spectral Reflectometry, J. of Crystal Growth, 248, (2003). This paper describes application of Reflectometry to determine substrate temperature.
Another paper, Titled “Investigation of Half-Wave Method for Birefringence or Thickness Measurements of a Thick, Semitransparent, Uniaxial, Anisotropic Substrate by Use of Spectroscopic Ellipsometry”, Kildemo et al., Appl. Optics., Vol. 30, No 25, (2000), describes application of Ellipsometry to investigate Birefringence in substrates.
Another paper titled “Advanced Process Control for High Quality R & D and Production of MOVPE Material by RealTem”, Malm et al., J. of Crystal Growth, 248, (2003) describes determination of temperature of a wafer by measuring the emmissivity of a wafer using an infra-red pyrometer with a pulsed laser-based reflectometer, both working at 905 nm and positioned at normal incidence to wafers inside a Metalorganic Vapor Phase Epitaxy (MOVPE) system.
The method disclosed herein for monitoring Temperature Change in Uniaxial or Biaxial Anisotropic Samples which utilizes change in birefringence electromagnetic radiation provides benefit over the prior art.
The disclosed invention provides a method to detect change in Sample Temperature utilizing electromagnetic radiation, where the Sample demonstrates uniaxial or biaxial anisotropy, (ie. it has unequal ordinary and extraordinary indices of refraction). Two distinctive cases arise, the first being where both the Ordinary (no) and Extraordinary (ne) Indicies of Refraction are in a common plane substantially parallel to a surface of a sample, and the other where ordinary index of refraction is in said plane, and the extraordinary is substantially perpendicular to said sample surface. It should be appreciated that when a beam of electromagnetic radiation is oriented to interact with a uniaxial or biaxial sample so that it experiences birefringence, in either reflection of transmission, it becomes possible to monitor oscillation patterns in detectable results caused by said interaction.
A disclosed invention method of detecting and tracking temperature change of a sample then comprises the steps of:
Another disclosed invention method of detecting and tracking temperature change of a sample comprises the steps of:
Another disclosed invention method of detecting and tracking temperature change of a sample comprises the steps of:
In practice a standard sample can be investigated along with determination of absolute temperature, to provide data which allows conversion from temperature change to absolute temperature values in investigated samples.
The disclosed invention will be better understood by reference to the Detailed Description Section of this Specification, in conjunction with the Drawings.
It is therefore a purpose and/or objective of the disclosed invention to teach a method of monitoring temperature change by applying a polarized spectroscopic electromagnetic beam to a sample surface along a locus such that it experiences birefringence, and noting changes therein as a function of temperature.
Other purposes and/or objectives will become apparent upon a reading of the Specification and Claims.
As an example a Silicon Carbide (SiC) sample was investigated. A mathematical model was constructed comprising Two sets of Optical Constants, (Ordinary Index and Birefringence at a Nominal Angle thereto such that the Extraordinary Index can be determined), which Optical Constants are allowed to systematically vary with Sample Composition and Temperature, a surface roughness to account for surface oxide and per se. roughness, and Thickness. Backside effects are also present as the SiC is transparent and said backside reflections, along with Surface Reflections, are monitored in the present invention methodology.
Application of the present invention methodology provides results shown in
Psi (Ψ) and Delta (Δ) plots are presented in
where (n) and the (δn) are given by:
δn=(no−ne)
n=0.5(no+ne)
It should be appreciated that a key advantage is that large canges in period and phase of oscillations provide high sensitivity to temperature.
Having hereby disclosed the subject matter of the present invention, it should be obvious that many modifications, substitutions, and variations of the present invention are possible in view of the teachings. It is therefore to be understood that the invention may be practiced other than as specifically described, and should be limited in its breadth and scope only by the Claims.
Johs, Blaine D., Micovic, Miroslav
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