silanylamine-based compounds represented by Formula 1 are provided. Methods of preparing the compounds and organic light emitting devices including organic layers comprising the silanylamine-based compounds are also provided.
##STR00001##
The silanylamine-based compounds have excellent electrical stability and electron transporting capabilities. Thus, the silanylamine-based compounds may be effectively used for red, green, blue, and white fluorescent and phosphorescent materials used to form hole injection layers, hole transport layers, and emissive layers in organic light emitting devices. Organic light emitting devices using these compounds have high efficiency, low driving voltages, high luminance and long lifetimes.
|
##STR00065##
wherein:
X is selected from the group consisting of a single bond, substituted C1-C30 alkylene groups, unsubstituted C1-C30 alkylene groups, substituted C6-C30 arylene groups, unsubstituted C6-C30 arylene groups, substituted C2-C30 heteroarylene groups and unsubstituted C2-C30 heteroarylene groups;
n is an integer ranging from 1 to 5;
Ar1 is selected from the group consisting of substituted C2-C30 heteroaryl groups, and unsubstituted C2-C30 heteroaryl groups;
Ar2 is selected from the group consisting of substituted C6-C30 aryl groups, and unsubstituted C6-C30 aryl groups;
R1, R2 and R3 are each independently selected from the group consisting of hydrogen atoms, substituted C1-C30 alkyl groups, unsubstituted C1-C30 alkyl groups, substituted C2-C30 alkenyl groups, unsubstituted C2-C30 alkenyl groups, substituted C2-C30 alkynyl groups, unsubstituted C2-C30 alkynyl groups, substituted C1-C30 alkoxy groups, unsubstituted C1-C30 alkoxy groups, substituted C6-C30 aryloxy groups, unsubstituted C6-C30 aryloxy groups, substituted C6-C30 aryl groups, unsubstituted C6-C30 aryl groups, substituted C2-C30 heteroaryl groups and unsubstituted C2-C30 heteroaryl groups; and
at least two of R1, R2 and R3 are optionally bonded to each other to form a saturated or unsaturated ring.
13. A method of preparing a silanylamine-based compound represented by Formula 1 comprising reacting a compound represented by Formula 1a and a compound represented by Formula 1b by reaction scheme 1:
##STR00072##
wherein:
X is selected from the group consisting of a single bond, substituted C1-C30 alkylene groups, unsubstituted C1-C30 alkylene groups, substituted C6-C30 arylene groups, unsubstituted C6-C30 arylene groups, substituted C2-C30 heteroarylene groups and unsubstituted C2-C30 heteroarylene groups;
n is an integer ranging from 1 to 5;
Ar1 is selected from the group consisting of substituted C2-C30 heteroaryl groups, and unsubstituted C2-C30 heteroaryl groups;
Ar2 is selected from the group consisting of substituted C2-C30 heteroaryl groups, and unsubstituted C2-C30 heteroaryl groups;
R1, R2 and R3 are each independently selected from the group consisting of hydrogen atoms, substituted C1-C30 alkyl groups, unsubstituted C1-C30 alkyl groups, substituted C2-C30 alkenyl groups, unsubstituted C2-C30 alkenyl groups, substituted C2-C30 alkynyl groups, unsubstituted C2-C30 alkynyl groups, substituted C1-C30 alkoxy groups, unsubstituted C1-C30 alkoxy groups, substituted C6-C30 aryloxy groups, unsubstituted C6-C30 aryloxy groups, substituted C6-C30 aryl groups, unsubstituted C6-C30 aryl groups, substituted C2-C30 heteroaryl groups and unsubstituted C2-C30 heteroaryl groups;
at least two of R1, R2 and R3 are optionally bonded to each other to form a saturated or unsaturated ring; and
Y is a halogen atom.
2. The compound of
3. The compound of
##STR00066##
wherein R4 and R5 are each independently selected from the group consisting of hydrogen atoms, halogen atoms, cyano groups, hydroxyl groups, substituted C1-C30 alkyl groups, unsubstituted C1-C30 alkyl groups, substituted C1-C30 alkoxy groups, unsubstituted C1-C30 alkoxy groups, substituted C6-C30 aryl groups, unsubstituted C6-C30 aryl groups, substituted C3-C30 heteroaryl groups, and unsubstituted C3-C30 heteroaryl groups.
4. The compound of
5. The compound of
##STR00067##
6. The compound of
7. The compound of
Ar2 is selected from the group consisting of phenyl groups, halophenyl groups, cyanophenyl groups, C1-C5 alkylphenyl groups, C1-C5 alkoxyphenyl groups, phenoxyphenyl groups, phenyl groups substituted with —N(Z1)(Z2), biphenyl groups, halobiphenyl groups, cyanobiphenyl groups, C1-C5 alkylnaphthyl groups, C1-C5 alkoxynaphthyl groups, phenoxynaphthyl groups, naphthyl groups substituted with —N(Z1)(Z2), fluorenyl groups, halofluorenyl groups, cyanofluorenyl groups, C1-C5 alkylfluorenyl groups, C1-C5 alkoxyfluorenyl groups, and phenoxyfluorenyl groups;
wherein Z1 and Z2 are each independently selected from the group consisting of hydrogen atoms, substituted C1-C30 alkyl groups, unsubstituted C1-C30 alkyl groups, substituted C1-C30 haloalkyl groups, unsubstituted C1-C30 haloalkyl groups, substituted C6-C30 aryl groups, unsubstituted C6-C30 aryl groups, substituted C6-C30 haloaryl groups, unsubstituted C6-C30 haloaryl groups, substituted C2-C30 heteroaryl groups and unsubstituted C2-C30 heteroaryl groups.
8. The compound of
9. The compound of
##STR00068##
##STR00069##
wherein m is an integer ranging from 1 to 5.
10. The compound of
11. The compound of
12. The compound of
##STR00070##
##STR00071##
14. An organic light emitting device comprising:
a first electrode;
a second electrode; and
an organic layer positioned between the first electrode and the second electrode, wherein the organic layer comprises the compound of
15. The organic light emitting device of
16. The organic light emitting device of
17. The organic light emitting device of
18. The organic light emitting device of
19. The organic light emitting device of
first electrode/single layer having both hole injection and hole transport capabilities/emissive layer/electron transport layer/second electrode structures, and
first electrode/single layer having both hole injection and hole transport capabilities/emissive layer/electron transport layer/electron injection layer/second electrode structures.
20. The organic light emitting device of
21. The organic light emitting device of
22. The organic light emitting device of
|
|||||||||||||||||||||||||||||||||||||||||||||||||||
This application claims priority to and the benefit of Korean Patent Application No. 10-2006-0110187, filed on Nov. 8, 2006 in the Korean Intellectual Property Office, the entire content of which is incorporated herein by reference.
1. Field of the Invention
The present invention relates to silanylamine-based compounds, methods of preparing the same, and organic light emitting devices including organic layers comprising a silanylamine-based compound.
2. Description of the Related Art
Organic light emitting devices (OLEDs) are self-emitting devices having wide viewing angles, excellent contrast, and quick responses. Organic light emitting devices have low operating voltages and quick response times, and can realize multi-color images. Accordingly, OLEDs are being extensively researched.
A typical organic light emitting device has an anode/emissive layer/cathode structure. Organic light emitting devices can also have various other structures, such as anode/hole transport layer/emissive layer/cathode, and anode/hole transport layer/emissive layer/electron injection layer/cathode. These alternative structures are realized by further including an electron transport layer and at least one of a hole injection layer, a hole transport layer and an electron injection layer between the anode and the emissive layer, or between the emissive layer and the cathode.
Fluorene and anthracene derivatives have been used as to form the hole transport layer. However, organic light emitting devices having these hole transport layers do not have satisfactory lifetime, efficiency, and power consumption.
In one embodiment of the present invention, a material is provided for forming a red, green, blue, or white fluorescent or phosphorescent organic layer of an organic light emitting device (OLED).
According to another embodiment, an OLED includes an organic layer using the material. The OLED using the material has excellent electrical stability, high electron transporting capability, high glass transition temperature, and crystallization prevention properties. The OLED also exhibits excellent efficiency, low operating voltage, high luminance and long lifetime.
In yet another embodiment of the present invention, a method of preparing the material is provided.
According to one embodiment of the present invention, a silanylamine-based compound represented by Formula 1 below is provided.
##STR00002##
In Formula 1, n is an integer ranging from 1 to 5 and X is selected from a single bond, substituted and unsubstituted C1-C30 alkylene groups, substituted and unsubstituted C6-C30 arylene groups, and substituted and unsubstituted C2-C30 heteroarylene groups. Ar1 and Ar2 are each independently selected from hydrogen atoms, substituted and unsubstituted C6-C30 aryl groups, and substituted and unsubstituted C2-C30 heteroaryl groups. R1, R2 and R3 are each independently selected from hydrogen atoms, substituted and unsubstituted C1-C30 alkyl groups, substituted and unsubstituted C2-C30 alkenyl groups, substituted and unsubstituted C2-C30 alkynyl groups, substituted and unsubstituted C1-C30 alkoxy groups, substituted and unsubstituted C6-C30 aryloxy groups, substituted and unsubstituted C6-C30 aryl groups, and substituted and unsubstituted C2-C30 heteroaryl groups. At least two of R1, R2 and R3 are bonded to each other to form a saturated or unsaturated ring.
According to another embodiment of the present invention, a method of preparing a silanylamine-based compound represented by Formula 1 is provided. In one embodiment, the method includes reacting a compound represented by Formula 1a and a compound represented by Formula 1b via Reaction Scheme 1 below.
##STR00003##
In Formulae 1a and 1b, X, n, Ar1, Ar2, R1, R2 and R3 are as described above, and Y is a halogen atom.
According to another embodiment of the present invention, an organic light emitting device includes a first electrode, a second electrode, and an organic layer positioned between the first electrode and the second electrode, the organic layer including a silanylamine-based compound. The organic light emitting device including the silanylamine-based compound represented by Formula 1 exhibits low driving voltage, excellent luminance, high efficiency, high current density and has a long lifetime.
The above and other features and advantages of the present invention will become more apparent by reference to the following detailed description when considered in conjunction with the attached drawings in which:
According to one embodiment of the present invention, a silanylamine-based compound is represented by Formula 1 below.
##STR00004##
In Formula 1, an amine derivative is bonded to a silane derivative through a linking group —(X)n— to form the silanylamine-based compound.
In Formula 1, n may be an integer ranging from 1 to 5 and X may be selected from a single bond, substituted and unsubstituted C1-C30 alkylene groups, substituted and unsubstituted C6-C30 arylene groups, and substituted and unsubstituted C2-C30 heteroarylene groups. Ar1 and Ar2 may be each independently selected from hydrogen atoms, substituted and unsubstituted C6-C30 aryl groups, and substituted and unsubstituted C2-C30 heteroaryl groups. R1, R2 and R3 may be each independently selected from hydrogen atoms, substituted and unsubstituted C1-C30 alkyl groups, substituted and unsubstituted C2-C30 alkenyl groups, substituted and unsubstituted C2-C30 alkynyl groups, substituted and unsubstituted C1-C30 alkoxy groups, substituted and unsubstituted C6-C30 aryloxy groups, substituted and unsubstituted C6-C30 aryl groups, and substituted and unsubstituted C2-C30 heteroaryl groups. At least two of R1, R2 and R3 are optionally bonded to each other to form a saturated or unsaturated ring.
Nonlimiting examples of suitable unsubstituted C1-C30 alkyl groups include methyl groups, ethyl groups, propyl groups, isobutyl groups, sec-butyl groups, pentyl groups, iso-amyl groups, and hexyl groups. At least one of the hydrogen atoms in the alkyl group may be substituted with a constituent selected from halogen atoms, hydroxy groups, nitro groups, cyano groups, amino groups, amidino groups, hydrazines, hydrazones, carboxyl groups and salts thereof, sulfonic acid groups and salts thereof, phosphoric acid groups and salts thereof, C1-C30 alkyl groups, C1-C30 alkenyl groups, C1-C30 alkynyl groups, C6-C30 aryl groups, C7-C20 arylalkyl groups, C2-C20 heteroaryl groups, C3-C30 heteroarylalkyl groups, C6-C30 aryloxy groups and —N(Z1)(Z2). In the —N(Z1)(Z2) substituent, Z1 and Z2 may be each independently selected from hydrogen atoms, substituted and unsubstituted C1-C30 alkyl groups, substituted and unsubstituted C1-C30 haloalkyl groups, substituted and unsubstituted C6-C30 aryl groups, substituted and unsubstituted C6-C30 haloaryl groups, and substituted and unsubstituted C2-C30 heteroaryl groups.
The unsubstituted C1-C30 alkylene group is a bivalent linking group having a structure similar to an alkyl group, and nonlimiting examples of the alkylene group include methylene groups and ethylene groups. At least one hydrogen atom in the alkylene group may be substituted with any of the substituents described above in connection with the unsubstituted C1-C30 alkyl group.
Nonlimiting examples of the unsubstituted C1-C30 alkoxy group include methoxy groups, ethoxy groups, phenyloxy groups, cyclohexyloxy groups, naphthyloxy groups, isopropyloxy groups, and diphenyloxy groups. At least one of the hydrogen atoms in the alkoxy group may be substituted with any of the substituents described above in connection with the unsubstituted C1-C30 alkyl group.
The C2-C30 alkenyl group is a hydrocarbon chain having a carbon-carbon double bond in the center or at one end of the alkyl group structure. Nonlimiting examples of suitable alkenyl groups include ethylene groups, propylene groups, butylene groups, and hexylene groups. At least one hydrogen atom in the alkenyl group may be substituted with any substituent described above in connection with the unsubstituted C1-C30 alkyl group.
The C2-C30 alkynyl group is a hydrocarbon chain having a carbon-carbon triple bond in the center or at one end of the alkyl group structure. Nonlimiting examples of suitable alkynyl groups include acetylene groups, propylacetylene groups, phenylacetylene groups, naphthylacetylene groups, isopropylacetylene groups, t-butylacetylene groups, and diphenylacetylene groups. At least one of the hydrogen atoms in the alkynyl group may be substituted with any substituent described above in connection with the unsubstituted C1-C30 alkyl group.
The C6-C30 aryl group is a carbocyclic aromatic system having from 6 to 30 carbon atoms and including at least one aromatic ring. The rings can be fused to each other or bonded to each other, for example, through a single bond. At least one hydrogen atom in the aryl group may be substituted with any of the substituents described above in connection with the unsubstituted C1-C30 alkyl group.
Nonlimiting examples of suitable unsubstituted C6-C30 aryl groups include phenyl groups, C1-C10 alkylphenyl groups (e.g., ethylphenyl groups), halophenyl groups (e.g., o-, m- and p-fluorophenyl groups, and dichlorophenyl groups), cyanophenyl groups, dicyanophenyl groups, trifluoromethoxyphenyl groups, biphenyl groups, halobiphenyl groups, cyanobiphenyl groups, C1-C10 biphenyl groups, C1-C10 alkoxybiphenyl groups, o-, m- and p-tolyl groups, o-, m- and p-cumenyl groups, mesityl groups, phenoxyphenyl groups, (α,α-dimethylbenzen)phenyl groups, (N,N′-dimethyl)aminophenyl groups, (N,N′-diphenyl)aminophenyl groups, pentalenyl groups, indenyl groups, naphthyl groups, halonaphthyl groups (e.g., fluoronaphthyl groups), C1-C10 alkylnaphthyl groups (e.g., methylnaphthyl groups), C1-C10 alkoxynaphthyl groups (e.g., methoxynaphthyl groups), cyanonaphthyl groups, anthracenyl groups, azulenyl groups, heptalenyl groups, acenaphthylenyl groups, phenalenyl groups, fluorenyl groups, anthraquinolyl groups, methylanthryl groups, phenanthrenyl groups, triphenylenyl groups, pyrenyl groups, chrysenyl groups, ethyl-chrysenyl groups, picenyl groups, perylenyl groups, chloroperylenyl groups, pentaphenyl groups, pentacenyl groups, tetraphenylenyl groups, hexaphenyl groups, hexacenyl groups, rubicenyl groups, coronenyl groups, trinaphthylenyl groups, heptaphenyl groups, heptacenyl groups, pyranthrenyl groups, and ovalenyl groups. At least one of the hydrogen atoms in the aryl group may be substituted with any of the substituents described above in connection with the unsubstituted C1-C30 alkyl group.
The unsubstituted C6-C30 arylene group is a bivalent linking group having a structure similar to the aryl group, and nonlimiting examples of the arylene group include phenylene groups and naphthylene groups. At least one hydrogen atom in the arylene group may be substituted with any of the substituents described above in connection with the unsubstituted C1-C30 alkyl group.
The unsubstituted C3-C30 heteroaryl group is a group having at least one aromatic ring in which at least one carbon atom in the aryl group is substituted with one of N, O, P and S. The aromatic rings can be fused to each other or bonded to each other, for example, through a single bond. At least one hydrogen atom in the heteroaryl group may be substituted with any of the substituents described above in connection with the unsubstituted C1-C30 alkyl group.
Nonlimiting examples of the unsubstituted C3-C30 heteroaryl group include pyrazolyl groups, imidazolyl groups, oxazolyl groups, thiazolyl groups, triazolyl groups, tetrazolyl groups, oxadiazolyl groups, pyridinyl groups, pyridazinyl groups, pyrimidinyl groups, triazinyl groups, carbazolyl groups, indolyl groups, quinolinyl groups, and isoquinolinyl groups. At least one hydrogen atom in the heteroaryl group may be substituted with any of the substituents described above in connection with the unsubstituted C1-C30 alkyl group.
The unsubstituted C3-C60 heteroarylene group is a bivalent linking group having a structure similar to the heteroaryl group, and at least one hydrogen atom in the heteroarylene group may be substituted with any of the substituents described above in connection with the unsubstituted C1-C30 alkyl group.
The unsubstituted C6-C30 aryloxy group is a group represented by —OA, where A is the aryl group, such as a phenoxy group. At least one hydrogen atom in the aryloxy group may be substituted with any of the substituents described above in connection with the unsubstituted C1-C30 alkyl group.
According to one embodiment of the present invention, in Formula 1, X may be selected from substituted and unsubstituted C1-C10 alkylene groups, substituted and unsubstituted phenylene groups, substituted and unsubstituted naphthylene groups, substituted and unsubstituted fluorenylene groups, substituted and unsubstituted anthracenylene groups, substituted and unsubstituted pyridinylene groups, substituted and unsubstituted quinolylene groups, substituted and unsubstituted isoquinolylene groups, substituted and unsubstituted anthraquinolylene groups, and substituted and unsubstituted carbazolylene groups.
Nonlimiting examples of suitable substituents for X include structures shown in Formula 2 below.
##STR00005##
In the structures shown in Formula 2, R4 and R5 are each independently selected from hydrogen atoms, halogen atoms, cyano groups, hydroxyl groups, substituted and unsubstituted C1-C30 alkyl groups, substituted and unsubstituted C1-C30 alkoxy groups, substituted and unsubstituted C6-C30 aryl groups, and substituted and unsubstituted C3-C30 heteroaryl groups. In one embodiment, for example, R4 and R5 are each independently selected from phenyl groups and halophenyl groups.
With X and n being as described above, nonlimiting examples of suitable —(X)n— linking groups include the substituents shown in Formula 3 below.
##STR00006##
In the structures shown in Formula 3, Ar1 and Ar2 are each independently selected from substituted and unsubstituted C1-C12 aryl groups, and substituted and unsubstituted C3-C15 heteroaryl groups.
Nonlimiting examples of suitable substituents for Ar1 and Ar2 include phenyl groups, halophenyl groups, cyanophenyl groups, C1-C5 alkylphenyl groups, C1-C5 alkoxyphenyl groups, phenoxyphenyl groups, phenyl groups substituted with —N(Z1)(Z2), biphenyl groups, halobiphenyl groups, cyanobiphenyl groups, C1-C5 alkylbiphenyl groups, C1-C5 alkoxybiphenyl groups, biphenyl groups substituted with —N(Z1)(Z2), naphthyl groups, halonaphthyl groups, cyanonaphthyl groups, C1-C5 alkylnaphthyl groups, C1-C5 alkoxynaphthyl groups, phenoxynaphthyl groups, naphthyl groups substituted with —N(Z1)(Z2), fluorenyl groups, halofluorenyl groups, cyanofluorenyl groups, C1-C5 alkylfluorenyl groups, C1-C5 alkoxyfluorenyl groups, phenoxyfluorenyl groups, carbazolyl groups, halocarbazolyl groups, cyanocarbazolyl groups, C1-C5 alkylcarbazolyl groups, C1-C5 alkoxycarbazolyl groups, phenoxycarbazolyl groups, carbazolyl groups substituted with —N(Z1)(Z2), C6-C12 arylcarbazolyl groups, C6-C12 haloarylcarbazolyl groups, pyridyl groups, halopyridyl groups, cyanopyridyl groups, C1-C5 alkylpyridyl groups, C1-C5 alkoxypyridyl groups, phenoxypyridyl groups, and pyridyl groups substituted with —N(Z1)(Z2).
In the structures shown in Formula 3, nonlimiting examples of suitable substituents for Z1 and Z2 include hydrogen, substituted and unsubstituted C1-C30 alkyl groups, substituted and unsubstituted C1-C30 haloalkyl groups, substituted and unsubstituted C6-C30 aryl groups, substituted and unsubstituted C6-C30 haloaryl groups, and substituted and unsubstituted C2-C30 heteroaryl groups. In one embodiment, Z1 and Z2 are each independently selected from C6-C12 aryl groups, and C6-C12 haloaryl groups.
In Formula 3, nonlimiting examples of suitable substituents for Ar1 and Ar2 include those represented by Formula 4 below.
##STR00007##
In Formula 4, m may be an integer ranging from 1 to 5, and R1, R2 and R3 may be each independently selected from substituted and unsubstituted C1-C10 alkyl groups, substituted and unsubstituted C1-C10 alkoxy groups, substituted and unsubstituted C6-C12 aryl groups, substituted and unsubstituted C6-C12 aryloxy groups, and substituted and unsubstituted C3-C12 heteroaryl groups. Nonlimiting examples of suitable substituents for R1, R2 and R3 include C1-C10 alkyl groups, phenyl groups, halophenyl groups, cyanophenyl groups, C1-C10 alkylphenyl groups, C1-C10 alkoxyphenyl groups, biphenyl groups, halobiphenyl groups, naphthyl groups, halonaphthyl groups, C1-C10 alkylnaphthyl groups, and C1-C10 alkoxynaphthyl groups.
Nonlimiting examples of suitable silanylamine-based compounds satisfying Formula 1 include Compounds 1 to 168 below.
##STR00008## ##STR00009## ##STR00010## ##STR00011## ##STR00012## ##STR00013## ##STR00014## ##STR00015## ##STR00016## ##STR00017## ##STR00018## ##STR00019## ##STR00020## ##STR00021## ##STR00022## ##STR00023## ##STR00024## ##STR00025## ##STR00026## ##STR00027## ##STR00028## ##STR00029## ##STR00030## ##STR00031## ##STR00032## ##STR00033## ##STR00034## ##STR00035## ##STR00036## ##STR00037## ##STR00038## ##STR00039## ##STR00040## ##STR00041## ##STR00042## ##STR00043## ##STR00044## ##STR00045## ##STR00046## ##STR00047## ##STR00048## ##STR00049## ##STR00050## ##STR00051## ##STR00052## ##STR00053## ##STR00054## ##STR00055##
The silanylamine-based compound represented by Formula 1 may be prepared by various methods. According to one embodiment of the present invention, as shown in Reaction Scheme 1 below, a compound represented by Formula 1a is reacted with a compound represented by Formula 1b to prepare a silanylamine-based compound represented by Formula 1.
##STR00056##
In Formulae 1a, 1b and 1, X, n, Ar1, Ar2, R1, R2 and R3 are as described above, and Y is a halogen atom such as F, Cl, Br or I.
The reaction represented by Reaction Scheme 1 may be performed in the presence of Pd2(dba)3 (where dba is dibenzylideneacetone), sodium tert-butoxide and tri(tert-butyl)phosphine and may be performed at a temperature ranging from about 50 to about 150° C.
According to another embodiment of the present invention, an organic light emitting device includes a first electrode, a second electrode and an organic layer positioned between the first electrode and the second electrode. The organic layer includes a silanylamine-based compound represented by Formula 1. The organic layer including the silanylamine-based compound represented by Formula 1 may be a hole injection layer, a hole transport layer, or a single layer having both hole injection and hole transport capabilities. The organic layer including the silanylamine-based compound represented by Formula 1 may also be an emissive layer. The emissive layer may include phosphorescent materials or fluorescent materials. The first electrode may be an anode and the second electrode may be a cathode, or the first electrode may be a cathode and the second electrode may be an anode.
The organic light emitting device may further include at least one layer selected from a hole injection layer, a hole transport layer, an electron blocking layer, an emissive layer, a hole blocking layer, an electron transport layer and an electron injection layer. For example, the organic light emitting device may have a first electrode/hole injection layer/emissive layer/second electrode structure, a first electrode/hole injection layer/hole transport layer/emissive layer/electron transport layer/second electrode structure, or a first electrode/hole injection layer/hole transport layer/emissive layer/electron transport layer/electron injection layer/second electrode structure. The organic light emitting device may also have a first electrode/single layer/emissive layer/electron transport layer/second electrode structure, or a first electrode/single layer/emissive layer/electron transport layer/electron injection layer/second electrode structure, where the single layer has both hole injection and hole transport capabilities.
Hereinafter, a method of preparing an organic light emitting device according to one embodiment of the present invention will be described with reference to
According to one embodiment of the present invention, the first electrode is first formed by depositing or sputtering a high work-function material on a substrate. The first electrode may be an anode or a cathode. The substrate can be any substrate used in conventional organic light emitting devices, and may be a glass substrate or a transparent plastic substrate that is waterproof and has excellent mechanical strength, thermal stability, transparency, surface smoothness and ease of handling. Nonlimiting examples of suitable materials for forming the first electrode include ITO, IZO, SnO2, ZnO, Al, Ag, Mg, and any material with high conductivity.
Then, the hole injection layer (HIL) may be formed on the first electrode by vacuum deposition, spin coating, casting, Langmuir Blodgett (LB) deposition, or the like.
When the HIL is formed using vacuum deposition, the deposition conditions may vary depending on the compound used to form the HIL, and the structure and thermal properties of the HIL to be formed. In general, however, the vacuum deposition conditions may include a deposition temperature ranging from about 100 to about 500° C., a pressure ranging from about 10−8 to about 10−3 torr, a deposition velocity ranging from about 0.01 to about 100 Å/sec, and a layer thickness ranging from about 10 Å to 5 μm.
When the HIL is formed by spin coating, the coating conditions may vary depending on the compound used to form the HIL, and the structure and thermal properties of the HIL to be formed. In general, however, the coating velocity may range from about 2000 to about 5000 rpm, and the heat treatment temperature (performed to remove solvent after coating) may range from about 80 to about 200° C.
The material used to form the HIL may be a silanylamine-based compound represented by Formula 1 or may be a material known in the art. Nonlimiting examples of suitable materials for the HIL include phthalocyanine compounds (such as a copper phthalocyanine), star-burst type amine derivatives (such as TCTA, m-MTDATA, and m-MTDAPB), polyaniline/Dodecylbenzenesulfonic acid (Pani/DBSA), poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (Pani/CSA), (polyaniline)/poly(4-styrenesulfonate) (PANI/PSS) and similar soluble and conductive polymers.
##STR00057##
The thickness of the HIL may range from about 100 to about 10000 Å. In one embodiment, for example, the thickness of the HIL ranges from about 100 to about 100 Å. When the thickness of the HIL is within these ranges, excellent hole injecting capabilities and driving voltages of the organic light emitting device may be obtained.
Then, the hole transport layer (HTL) may be formed on the HIL by vacuum deposition, spin coating, casting, LB deposition, or the like. When the HTL is formed by vacuum deposition or spin coating, deposition and coating conditions are similar to those for formation of the HIL, although the deposition and coating conditions may vary depending on the compound used to form the HTL.
The material used to form the HTL may be a silanylamine-based compound represented by Formula 1, or a material known in the art. Nonlimiting examples of suitable materials for forming the HTL include carbazole derivatives (such as N-phenylcarbazole, polyvinylcarbazole and the like), conventional amine derivatives having aromatic condensation rings (such as 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB), N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1-biphenyl]-4,4′-diamine (TPD), and N,N′-di(naphthalene-1-yl)-N,N′-diphenyl benzydine (α-NPD)), and the like.
##STR00058##
The thickness of the HTL may range from about 50 to about 1000 Å. In one embodiment, for example, the thickness of the HTL ranges from about 100 to about 600 Å. When the thickness of the HTL is within these ranges, excellent hole transporting capabilities and driving voltages of the organic light emitting device may be obtained.
Then, the emissive layer (EML) may be formed on the HTL by vacuum deposition, spin coating, casting, LB, or the like. When the EML is formed by vacuum deposition or spin coating, deposition and coating conditions are similar to those for formation of the HIL, although the deposition and coating conditions may vary depending on the compound used to form the EML.
The material used to form the EML may be a silanylamine-based compound represented by Formula 1 or various light emitting materials, such as hosts and dopants that are known in the art. The dopants may be fluorescent and/or phosphorescent dopants that are known in the art.
Nonlimiting examples of suitable host materials include Alq3, 4,4′-N,N′-dicarbazole-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), distyrylarylene (DSA), or IDE215 from Idemitsu Co.
Nonlimiting examples of suitable fluorescent dopants include IDE102, IDE105 and IDE118 from Idemitsu Co. Nonlimiting examples of suitable phosphorescent dopants include Ir(ppy)3 (green, where ppy is 2-phenylpyridine) (green), (4,6-F2 ppy)2Irpic, TEB002 from Covion Co., platinum(II) octaethylporphyrin (PtOEP), compounds represented by Formula 5 below, Firpic, and red phosphorescent dopant RD 61 from UDC Co.
##STR00059##
The amount of the dopant may range from about 0.1 to 20 parts by weight based on 100 parts by weight of the material used to form the EML (i.e., based on 100 parts by weight of the host and the dopant). In one embodiment, for example, the amount of the dopant ranges from about 0.5 to about 12 parts by weight based on 100 parts by weight of the material used to form the EML. When the amount of the dopant is greater than about 0.1 parts by weight, the effect achieved by adding the dopant is sufficient. Also, when the amount of the dopant is less than about 20 parts by weight, fluorescence or phosphorescence quenching may be prevented.
The thickness of the EML may range from about 100 to about 1000 Å. In one embodiment, for example, the thickness of the EML ranges from about 200 to about 600 Å. When the thickness of the EML is within these ranges, excellent emitting abilities of the EML, and driving voltages of the organic light emitting device may be obtained.
When the EML includes a phosphorescent dopant, a hole blocking layer (HBL) (not shown) may be formed on the EML to prevent diffusion of triplet excitons or holes into the electron transport layer. Nonlimiting examples of suitable materials for forming the HBL include oxadiazole derivatives, triazole derivatives, phenanthroline derivatives, Balq, and BCP.
The thickness of the HBL may range from about 50 to about 1000 Å. In one embodiment, for example, the thickness of the HBL ranges from about 100 to about 300 Å. When the thickness of the HBL is within these ranges, excellent hole blocking abilities of the HBL and driving voltages of the organic light emitting device may be obtained.
Then, the electron transport layer (ETL) may be formed on the HBL by vacuum deposition, spin coating, casting, or the like. When the ETL is formed by vacuum deposition or spin coating, deposition and coating conditions are similar to those for formation of the HIL, although the deposition and coating conditions may vary depending on the compound used to form the ETL.
Nonlimiting examples of suitable materials for forming the ETL include quinoline derivatives (for example, tris(8-quinolinorate)aluminum (Alq3)), TAZ, and the like.
The thickness of the ETL may range from about 100 to about 1000 Å. In one embodiment, for example, the thickness of the ETL ranges from about 100 to about 500 Å. When the thickness of the ETL is within these ranges, excellent electron transporting abilities of the ETL and driving voltages of the organic light emitting device may be obtained.
Then, the electron injection layer (EIL) may be formed on the ETL for example, by vacuum deposition, spin coating, casting, or the like. The EIL is formed of a material that allows easy injection of electrons from a cathode.
Nonlimiting examples of suitable materials for forming the EIL include LiF, NaCl, CsF, Li2O, BaO, and the like. Deposition and coating conditions are similar to those for formation of the HIL, although the deposition and coating conditions may vary depending on the material used to form the EIL.
The thickness of the EIL may range from about 1 to about 100 Å. In one embodiment, for example, the thickness of the EIL ranges from about 5 to about 90 Å. When the thickness of the EIL is within these ranges, excellent electron injection abilities of the EIL and driving voltages of the organic light emitting device may be obtained.
Finally, the second electrode can be formed on the EIL by vacuum deposition, sputtering, or the like. The second electrode can be used as a cathode or an anode. The material used to form the second electrode may be a low work-function metal, alloy, electrically conductive compound, or a combination thereof. Nonlimiting examples of suitable materials for the second electrode include Li, Mg, Al, Al—Li, Ca, Mg—In, Mg—Ag, and the like. In addition, a transparent cathode formed of ITO or IZO can be used to produce a front surface light emitting device.
Hereinafter, Synthesis Examples of Compounds 9, 43, 44, 45, and 137 and Examples are presented. However, the Synthesis Examples and Examples are presented for illustrative purposes only and are not intended to limit the scope of the present invention.
Synthesis of Compound 9
Compound 9 was synthesized via Reaction Scheme 2 below:
##STR00060##
Synthesis of Intermediate A
3.12 g (10 mmol) of dibromobiphenyl was dissolved in 30 mL of THF, and 4 mL of 2.5M n-butyllithium (in Hexane) was added thereto at −78° C. 2.95 g (10 mmol) of chlorotriphenylsilane dissolved in 5 mL of THF was gradually added thereto at −78° C. after one hour. The mixture was stirred at room temperature for 5 hours, water was added thereto and the mixture was washed three times with 30 mL of diethylether. The washed diethylether layer was dried over MgSO4 and dried under reduced pressure to obtain a product. The obtained product was purified by silica gel column chromatography to obtain 2.9 g of white solid intermediate A (Yield: 60%). (1H NMR (CDCl3, 400 MHz) δ (ppm) 7.65-7.53 (m, 12H), 7.47-7.36 (m, 11H)).
Synthesis of Compound 9
4.9 g (10 mmol) of intermediate A, 2.6 g (12 mmol) of 2-naphthylphenylamine, 2.9 mg (30 mmol) of t-BuONa, 183 mg (0.2 mmol) of Pd2(dba)3, 40 mg (0.2 mmol) of P(t-Bu)3 were dissolved in 40 mL of toluene and stirred at 90° C. for three hours.
When the reaction was completed, the mixture was cooled to room temperature and extracted three times with 40 mL of distilled water and diethylether. A collected organic layer was dried over MgSO4 to evaporate the solvent. The residue was purified using silica gel column chromatography to obtain 5.67 g of yellow solid Compound 9 (Yield: 90%). (1H NMR (CD2Cl2, 400 MHz) δ (ppm) 7.75 (t, 2H), 7.63-7.56 (m, 12H), 7.53 (d, 2H), 7.46-7.34 (m, 12H), 7.30-7.26 (m, 3H), 7.16 (d, 4H), 7.06 (t, 1H); 13C NMR (CD2Cl2, 100 MHz) δ (ppm) 147.6, 147.5, 145.3, 141.7, 136.9, 136.3, 134.8, 134.5, 134.2, 132.4, 130.2, 129.7, 129.4, 128.9, 127.9, 127.8, 127.5, 126.9, 126.3, 126.0, 124.8, 124.6, 124.5, 124.0, 123.3, 120.5).
The UV absorption spectrum of 0.2 mM of the obtained Compound 9 diluted in CH2Cl2 was measured, and the maximum absorption spectrum was 340 nm.
Deposition temperature (Td) and glass transition temperature (Tg) were measured by performing thermal analysis using thermo gravimetric analysis (TGA) and differential scanning calorimetry (DSC) under the following conditions: N2 atmosphere, temperatures of room temperature to 600° C. (10° C./min) for TGA and room temperature to 400° C. for DSC, and Pan Type: Pt Pan in disposable Al Pan (TGA) and disposable Al pan (DSC). Td was 330° C., and Tg was 97° C.
The highest occupied molecular orbital (HOMO) and lowest occupied molecular orbital (LUMO) were measured using the UV absorption spectrum and an ionization potential measurement AC-2. The HOMO was 5.4 eV and the LUMO was 2.33 eV.
Synthesis of Compound 43
Compound 43 was synthesized via Reaction Scheme 3 below:
##STR00061##
Synthesis of Intermediate B
3.69 g (10.0 mmol) of 3-iodo-9-phenylcarbazole, 1.11 g (12.0 mmol) of aniline, 2.88 g (30.0 mmol) of t-BuONa, 183 mg (0.2 mmol) of Pd2(dba)3, 40 mg (0.2 mmol) of P(t-Bu)3 were dissolved in 40 mL of toluene, and stirred at 90° C. for 3 hours.
When the reaction was completed, the mixture was cooled to room temperature and distilled water was added thereto. The mixture was extracted three times with 40 mL of diethylether. A collected organic layer was dried over MgSO4 to evaporate the solvent. The residue was purified using silica gel column chromatography to obtain 2.17 g of white solid Intermediate B (Yield: 65%). (1H NMR (CDCl3, 400 MHz) δ (ppm) 8.01 (m, 1H), 7.66 (m, 1H), 7.51-7.33 (m, 7H), 7.21-6.94 (m, 5H), 6.73 (m, 1H), 5.68 (bs, 1H); 13C NMR (CDCl3, 100 MHz) δ (ppm) 144.6, 139.8, 137.4, 135.7, 129.8, 129.3, 128.0, 127.4, 127.1, 126.5, 119.1, 119.0, 118.6, 118.4, 116.7, 113.1, 111.1, 109.4, 102.4).
Synthesis of Compound 43
Compound 43 was obtained as in Synthesis Example 1, except that Intermediate B was used instead of 2-naphthylphenylamine (Yield: 82%). (1H NMR (CDCl3, 300 MHz) δ (ppm) 7.98 (d, 1H), 7.69 (bd, 1H), 7.67-7.54 (m, 14H), 7.50-7.33 (m, 14H), 7.28-7.13 (m, 9H), 6.97 (t, 1H); DEPT 13C NMR (CDCl3, 100 MHz) δ (ppm) 136.9, 136.5, 130.0, 129.6, 129.2, 127.9, 127.7, 127.5, 127.1, 126.2, 126.0, 125.8, 123.3, 122.3, 122.1, 120.6, 120.0, 118.8, 110.8, 110.0).
The UV absorption spectrum of 0.2 mM of the obtained Compound 43 diluted in CH2Cl2 was measured, and the maximum absorption spectrum was 345 and 310 nm.
Td and Tg were measured by performing thermal analysis using thermo gravimetric analysis (TGA) and differential scanning calorimetry (DSC) under the following conditions: N2 atmosphere, temperatures of room temperature to 600° C. (10° C./min) for TGA and of room temperature to 400° C. for DSC, and Pan Type: Pt Pan in disposable Al Pan (TGA) and disposable Al pan (DSC). Td was 380° C., and Tg was 127° C.
The HOMO and LUMO were measured using the UV absorption spectrum and an ionization potential measurement AC-2. The HOMO was 5.30 eV and the LUMO was 2.24 eV.
Synthesis of Compound 44
Compound 44 was synthesized via Reaction Scheme 4 below:
##STR00062##
Synthesis of Intermediate C
Intermediate C was synthesized as in Synthesis Example 1, except that benzylamine was used instead of aniline. (NMR (CDCl3, 400 MHz) δ (ppm) 8.02 (m, 1H), 7.67 (m, 1H), 7.52-7.31 (m, 7H), 7.02-6.86 (m, 5H), 6.10 (bs, 1H), 2.25 (s, 3H); 13C NMR (CDCl3, 100 MHz) δ (ppm) 140.1, 138.8, 136.4, 134.7, 128.8, 127.3, 127.0, 126.4, 126.1, 125.5, 118.1, 118.0, 117.6, 117.4, 116.7, 112.1, 110.1, 108.4, 101.4, 20.3).
Synthesis of Compound 44
Compound 44 was obtained as in Synthesis Example 1, except that Intermediate C was used instead of 2-naphthylphenylamine (Yield: 87%). (1H NMR (CDCl3, 400 MHz) δ (ppm) 8.09 (d, 1H), 8.01 (d, 1H), 7.70-7.52 (m, 17H), 7.49-7.35 (m, 12H), 7.24-7.18 (m, 2H), 7.11 (d, 2H), 7.04 (t, 4H), 2.28 (t, 3H); 13C NMR (CDCl3, 100 MHz) δ (ppm) 149.5, 146.4, 142.6, 142.2, 141.3, 138.9, 138.3, 137.5, 137.0, 135.0, 133.2, 133.1, 132.6, 130.9, 130.7, 130.5, 128.8, 128.5, 128.3, 127.7, 127.1, 126.5, 125.2, 125.0, 123.8, 121.9, 121.4, 120.8, 119.3, 111.5, 110.6, 20.7).
The UV absorption spectrum of 0.2 mM of the obtained Compound 44 diluted in CH2Cl2 was measured, and the maximum absorption spectrum was 343, 313, and 245 nm.
Td and Tg were measured by performing thermal analysis using thermo gravimetric analysis (TGA) and differential scanning calorimetry (DSC) under the following conditions: N2 atmosphere, temperatures of room temperature to 600° C. (10° C./min) for TGA and of room temperature to 400° C. for DSC, and Pan Type: Pt Pan in disposable Al Pan (TGA) and disposable Al pan(DSC). Td was 414° C., and Tg was 129° C.
The HOMO and LUMO were measured using the UV absorption spectrum and an ionization potential measurement AC-2. The HOMO was 5.20 eV and the LUMO was 2.21 eV.
Synthesis of Compound 45
Compound 45 was synthesized via Reaction Scheme 5 below:
##STR00063##
Synthesis of Intermediate D
Intermediate D was synthesized as in Synthesis Example 1, except that fluoroaniline was used instead of aniline. (NMR (CDCl3, 400 MHz) δ (ppm) 8.02 (m, 1H), 7.97-7.92 (m, 2H), 7.66 (m, 1H), 7.48-7.18 (m, 9H), 6.94 (m, 1H), 6.50 (bs, 1H); 13C NMR (CDCl3, 100 MHz) δ (ppm) 157.8 (d), 140.7 (d), 137.8, 135.4, 133.7, 127.8, 126.3, 126.0, 125.4, 125.1, 124.5, 117.1, 117.0, 116.6, 116.4, 115.7, 111.1, 109.1, 107.4, 100.4).
Synthesis of Compound 45
Compound 45 was obtained as in Synthesis Example 1, except that Intermediate D was used instead of 2-naphthylphenylamine (Yield: 80%). (1H NMR (Acetone-d6, 400 MHz) δ (ppm) 8.06 (d, 1H), 8.02 (d, 1H), 7.68-7.50 (m, 16H), 7.47-7.34 (m, 13H), 7.21-7.13 (m, 4H), 7.07-7.00 (m, 4H); 13C NMR (CDCl3, 100 MHz) δ (ppm) 159.8, 157.4, 148.7, 144.5, 141.8, 141.4, 140.3, 138.2, 137.5, 136.8, 136.2, 134.2, 132.8, 131.9, 130.1, 129.8, 128.0, 127.7, 127.6, 126.9, 126.4, 125.9, 125.8, 125.6, 124.5, 123.0, 121.2, 120.6, 120.1, 118.5, 116.1, 115.8, 110.9, 109.8).
The UV absorption spectrum of 0.2 mM of the obtained Compound 45 diluted in CH2Cl2 was measured, and the maximum absorption spectrum was 338,309, and 243 nm.
Td and Tg were measured by performing thermal analysis using thermo gravimetric analysis (TGA) and differential scanning calorimetry (DSC) under the following conditions: N2 atmosphere, temperatures of room temperature to 600° C. (10° C./min) for TGA and of room temperature to 400° C. for DSC, and Pan Type: Pt Pan in disposable Al Pan (TGA) and disposable Al pan(DSC). Td was 405° C., and Tg was 126° C.
The HOMO and LUMO were measured using the UV absorption spectrum and an ionization potential measurement AC-2. The HOMO was 5.20 eV and the LUMO was 2.22 eV.
Synthesis of Compound 137
Compound 137 was synthesized via Reaction Scheme 6 below:
##STR00064##
Synthesis of Intermediate E
3.25 g (10.0 mmol) of 3, 6-dibromocarbazole, 10.2 g (50.0 mmole) iodobenzene, 190 mg (1.0 mmole) of CuI, 132 mg (0.5 mmole) of 18-C-6, 2.76 g (20.0 mmole) of K2CO3 were dissolved in 50 mL of DMPU, and stirred at 170° C. for 20 hours. The mixture was cooled to room temperature and 50 mL of diethylether was added thereto. Then the mixture was washed with plenty of water and ammonium hydroxide solution. A collected organic layer was dried over MgSO4 to evaporate the solvent. The residue was purified using silica gel column chromatography to obtain 3.40 g of white solid Intermediate E (Yield: 85%). (NMR (CDCl3, 400 MHz) δ (ppm) 7.92 (m, 2H), 7.55-7.47 (m, 6H), 7.36-7.16 (m, 3H); 13C NMR (CDCl3, 100 MHz) δ (ppm) 142.6, 137.6, 130.2, 129.8, 127.4, 127.0, 122.8, 122.5, 115.3, 111.3).
Synthesis of Intermediate F
4.01 g (10 mmol) of Intermediate E was dissolved in 20 mL of THF, and 4.6 mL (12.0 mmol) of 2.6M n-butyllithium (in Hexane) was added thereto at −78° C. for 10 minutes. 3.83 g (13.0 mmol) of chlorotriphenylsilane dissolved in 20 mL of THF was gradually added thereto at −78° C. for 20 minutes, and the mixture was stirred at room temperature for 17 hours. 50 mL of water was added to the mixture and the mixture was extracted twice with 50 mL of diethylether. A collected organic layer was dried over MgSO4 to evaporate the solvent. The residue was purified using silica gel column chromatography to obtain 3.19 g of white solid Intermediate F (Yield: 55%). (NMR (CDCl3, 400 MHz) δ (ppm) 8.28-8.21 (m, 3H), 8.14 (d, 2H), 7.86-7.14 (m, 21H); 13C NMR (CDCl3, 100 MHz) δ (ppm) 143.1, 137.9, 136.4, 134.4, 133.9, 133.7, 129.8, 129.5, 129.0, 128.0, 127.9, 127.5, 126.9, 124.9, 123.9, 123.1, 118.3, 111.2, 109.7, 107.6).
Synthesis of Compound 137
Compound 137 was obtained as in Synthesis Example 2, except that Intermediate F was used instead of Intermediate A (Yield: 80%). (1H NMR (CDCl3, 300 MHz) δ (ppm) 8.25 (s, 1H), 7.94 (d, 3H), 7.64-7.52 (m, 15H), 7.43-7.24 (m, 18H), 7.20-7.14 (m, 3H), 7.02 (d, 2H), 6.83 (t, 1H)).
The UV absorption spectrum of 0.2 mM of the obtained Compound 137 diluted in CH2Cl2 was measured, and the maximum absorption spectrum was 317 nm.
Td and Tg were measured by performing thermal analysis using thermo gravimetric analysis (TGA) and differential scanning calorimetry (DSC) under the following conditions: N2 atmosphere, temperatures of room temperature to 600° C. (10° C./min) for TGA and of room temperature to 400° C. for DSC, and Pan Type: Pt Pan in disposable Al Pan (TGA) and disposable Al pan (DSC). Td was 390° C., and Tg was 148° C.
The HOMO and LUMO were measured using the UV absorption spectrum and an ionization potential measurement AC-2. The HOMO was 5.1 eV and the LUMO was 2.15 eV.
A Corning 15Ω/cm2 (1,200 Å) ITO glass substrate was cut into 50 mm×50 mm×0.7 mm size pieces, ultrasonicwashed with isopropyl alcohol for 5 minutes, ultrasonicwashed with deionized water for 5 minutes, and washed with UV ozone for 30 minutes. Then, the glass substrate was installed in a vacuum deposition device.
Compound 9 was vacuum deposited on the substrate to form a HIL with a thickness of 600 Å. 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB) was vacuum deposited on the HIL to form a HTL with a thickness of 300 Å.
IDE215 (a blue fluorescent host obtained from Idemitsu Co.) and IDE118 (a blue fluorescent dopant obtained from Idemitsu Co.) (98:2, w/w) were vacuum deposited on the HTL to form an EML with a thickness of 300 Å.
Then, Alq3 was vacuum deposited on the EML to form an ETL with a thickness of 300 Å, LiF was vacuum deposited on the ETL to form an EIL with a thickness of 10 Å, and Al was vacuum deposited on the EIL to a thickness of 3000 Å (cathode) to form a LiF/Al electrode to complete the manufacture of an organic light emitting device.
An organic light emitting device was prepared as in Example 1, except that Compound 43 was used instead of Compound 9 in forming the HIL.
An organic light emitting device was prepared as in Example 1, except that Compound 44 was used instead of Compound 9 in forming the HIL.
An organic light emitting device was prepared as in Example 1, except that Compound 45 was used instead of Compound 9 in forming the HIL.
An organic light emitting device was prepared as in Example 1, except that Compound 137 was used instead of Compound 9 in forming the HIL.
An organic light emitting device was prepared as in Example 1, except that IDE406 (from Idemitsu Co.) was used instead of Compound 9 in forming the HIL.
The driving voltage, current density, luminance, current efficiency and color coordinates of the organic light emitting devices obtained according to Examples 1 to 5 and Comparative Example 1 were measured using a Spectroscan spectrometer (PR650 from Photo Research Inc.). The results are shown in Table 1 below.
TABLE 1
Driving
Current
Current
Color
voltage
density
Luminance
efficiency
coordinate
(V)
(mA/cm2)
(cd/m2)
(cd/A)
(x, y)
Example 1
6.74
10
1,036
10.36
0.146, 0.268
8.04
100
12,030
12.03
0.146, 0.260
Example 2
5.90
10
916
9.16
0.139, 0.244
7.68
100
9,352
9.35
0.139, 0.239
Example 3
5.78
10
663
6.63
0.144, 0.239
7.34
100
6,882
6.88
0.144, 0.233
Example 4
6.34
10
581
5.81
0.144, 0.229
8.18
100
6,459
6.46
0.144, 0.223
Example 5
5.52
10
610
6.10
0.144, 0.235
7.78
100
6,360
6.36
0.144, 0.233
Com-
6.35
10
635
6.35
0.144, 0.229
parative
8.07
100
6,309
6.31
0.144, 0.223
Example 1
As shown in Table 1, the organic light emitting devices prepared according to Examples 1 to 5 had better I-V-L characteristics compared to the organic light emitting device prepared according to Comparative Example 1. In particular, the organic light emitting device of Example 1 having an organic layer including Compound 9 as the HIL, and the organic light emitting device of Example 2 having an organic layer including Compound 43 as the HIL showed improved brightness compared to the organic light emitting device of Comparative Example 1 (Refer to
The silanylamine-based compounds according to the present invention have excellent electrical stability and high electron transporting capabilities. Thus, the silanylamine-based compounds of the present invention may be effectively used for red, green, blue, and white fluorescent and phosphorescent materials used to form HILs, HTLs, and EMLs in organic light emitting devices. Organic light emitting devices having high efficiency, low driving voltage, high brightness and long lifetime may be prepared using the silanylamine-based compounds of the present invention.
While the present invention has been illustrated and described with reference to certain exemplary embodiments, it is understood by those of ordinary skill in the art that various changes and modifications can be made to the described embodiments without departing from the spirit and scope of the present invention as defined by the following claims.
Lee, Chang-Ho, Kwak, Yoon-Hyun, Hwang, Seok-Hwan, Kim, Young-Kook
| Patent | Priority | Assignee | Title |
| 10629830, | Dec 05 2012 | Samsung Display Co., Ltd. | Organic electroluminescent device |
| 10777747, | Dec 05 2016 | Samsung Display Co., Ltd. | Amine compound and organic electroluminescence device including the same |
| 11165029, | Sep 22 2016 | Samsung Display Co., Ltd. | Amine compound and organic electroluminescence device including the same |
| 8076681, | Oct 10 2008 | Canon Kabushiki Kaisha | White organic electroluminescent device |
| 9773987, | Jan 28 2013 | Samsung Display Co., Ltd. | Silicon-based compound and organic light-emitting diode comprising the same |
| 9780317, | Dec 05 2012 | Samsung Display Co., Ltd.; SAMSUNG DISPLAY CO , LTD | Amine derivative, organic luminescent material and organic electroluminescent device using the amine derivative or the organic luminescent material |
| 9997715, | Nov 18 2014 | Samsung Display Co., Ltd. | Material for organic electroluminescent device and organic electroluminescent device using the same |
| Patent | Priority | Assignee | Title |
| 2960517, | |||
| 4356429, | Jul 17 1980 | Eastman Kodak Company | Organic electroluminescent cell |
| 6465115, | Dec 09 1998 | Global Oled Technology LLC | Electroluminescent device with anthracene derivatives hole transport layer |
| 6596415, | Dec 09 1998 | Global Oled Technology LLC | Electroluminescent device with polyphenyl hydrocarbon hole transport layer |
| 7365198, | Mar 02 2006 | Canon Kabushiki Kaisha | Silyl compound, light emitting material, and organic light emitting device using the same |
| 20030211358, | |||
| 20080171227, | |||
| 20090206745, | |||
| DE10114970, | |||
| DE102004020, | |||
| JP11329734, | |||
| JP2006010555, | |||
| JP2006056957, | |||
| JP2006516136, | |||
| JP5323634, | |||
| KR100525611, | |||
| KR1020050078472, | |||
| KR1020060048267, |
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