The invention is directed to an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams, particularly for electron beam lithography in the semiconductor industry. It is the object of the invention to find a novel possibility for illuminating a substrate with a plurality of individually shaped, controllable particle beamlets which permits a high-resolution structuring of substrates with a high substrate throughput without limiting the flexibility of the applicable structure patterns or limiting the high substrate throughput due to a required flexibility.
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1. A system for the illuminating a substrate with individually shaped controllable particle beams comprising:
a particle beam source emitting a particle beam;
a first multiple-format multiple-diaphragm aperture array capable of generating beamlets with different cross sections generating separate particle beamlets;
an illumination system shaping and deflecting a particle beam illuminating the first diaphragm array;
a condenser lens system;
a second multiple-format multiple-diaphragm aperture array capable of generating beamlets with different cross sections having diaphragm apertures adapted to the first diaphragm array using an imaging scale, the first diaphragm array being imaged by the condenser lens system on the second diaphragm array;
an outlet aperture diaphragm at a first beam crossover, wherein the second diaphragm array is between the outlet aperture diaphragm and the first diaphragm array;
a reduction optics comprising at least one stage for reduced imaging of the beamlets passed by the second diaphragm array onto the substrate; and
a multi-beam deflector system for individual deflection of the beamlets comprising at least three multi-beam deflector arrays:
a first multi-beam deflector array between the first diaphragm array and the second diaphragm array generating by individual deflection of the beamlets different cross sections of the beamlets after the beamlets pass the second diaphragm array,
a second multi-beam deflector array adjacent to the second diaphragm array deflecting beamlets in partial crossovers and capable of blanking individual beamlets by directing them at the outlet aperture diaphragm or the second diaphragm array, and
a third multi-beam deflector array at a distance from the second diaphragm array of between 10% and 20% of the distance between the second diaphragm array and a second beam crossover directing the beamlets to different positions on the substrate.
2. The system of
wherein the multi-beam deflector arrays comprise two deflector chips arranged one on top of the other;
wherein each of the deflector chips comprises a deflector cell array comprising identical pairs of electrodes for individual deflection of the beamlets in a direction lateral to an optical axis of the system;
wherein the pairs of electrodes of the deflector cell arrays on the two deflector chips are oriented in substantially orthogonal directions relative to one another.
3. The system of
4. The system of
wherein the deflector cell arrays comprise at least (n+2) rows and (m+2) columns of deflector cells of parallel pairs of electrodes on every deflector chip, and
wherein no voltage is applied to peripheral deflector cells of the deflector cell arrays.
5. The system of
means for calculating voltage and regulating voltage,
wherein for each beamlet a crosstalk effect of eight directly adjacent deflector cells is used for calculating correction of deflection voltages in a deflector cell array to compensate for crosstalk between adjacent deflector cells of the deflector cell array.
6. The system of
7. The system of
8. The system of
9. The system of
10. The system of
11. The system of
at least two large diaphragm apertures with an edge length between 30 μm and 200 μm for exposure with a large-format particle beam and
at least one beam-shaping diaphragm group comprising diaphragm apertures with an edge length between 5 μm and 20 μm.
12. The system of
wherein the diaphragm arrays have different beam-shaping diaphragm groups,
wherein the illumination group selector is capable of illuminating separately one of the beam-shaping diaphragm groups of the first diaphragm array to generate differently dimensioned particle beams and arrays of particle beamlets.
13. The system of
14. The system of
15. The system of
16. The system of
17. The system of
wherein the first multi-beam deflector array is adjacent to the first diaphragm array and
wherein the second multi-beam deflector array is adjacent to the second diaphragm array.
18. The system of
wherein the third multi-beam deflector array functions as a first precision-positioning array, is adjacent to the second diaphragm array, and is between the second diaphragm array and the fourth multi-beam deflector array, and
wherein the fourth multi-beam deflector array functions as a second precision positioning array.
19. The system of
20. The system of
wherein the first multi-beam deflector array is adjacent to the second diaphragm array and
wherein the second multi-beam deflector array is adjacent to the second diaphragm array.
21. The system of
wherein the first multi-beam deflector array is adjacent to the first diaphragm array and
wherein the second multi-beam deflector array is adjacent to the second diaphragm array.
22. The system of
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This application claims priority to German Patent Application No. DE 10 2008 062 450.0, filed Dec. 13, 2008, which is incorporated herein by reference in its entirety.
The invention is directed to an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams with a particle beam source for emitting a particle beam, an illumination system for shaping and deflecting the particle beam for the illumination of a first aperture diaphragm array, wherein the aperture diaphragm array is a multiple-format diaphragm array for generating separate particle beamlets, a second multiple-format diaphragm array on which the first multiple-format diaphragm array is imaged by means of a condenser lens system and which has diaphragm apertures that are adapted to the first multiple-diaphragm array while taking into account the imaging scale, a multibeam deflector system for individual beam deflection of the separate particle beams, and reduction optics having at least one stage for reduced imaging of the particle beamlets passed by the second aperture diaphragm array onto a substrate. The invention is preferably applied in electron beam lithography, particularly in the semiconductor industry, for direct structuring of wafers and masks for photolithography.
With each technology node, that is, about every three years, there is a doubling of the quantity of structures on a component surface of the same size. Therefore, the image-generating methods for producing structures on masks and methods for direct structuring of wafers require increasingly longer writing times. Another reason for reduced productivity in high-resolution electron beam writers in high-end mask fabrication is the increasing degree of pre-distortion of the mask structure (optical proximity correction—OPC) to improve the structure resolution of high-productivity scanner objectives whose resolution, as is well-known, is diffraction-limited.
The demand in the semiconductor industry for lowering costs by reducing writing times in high-end mask fabrication and in direct exposure of wafers cannot be met by currently available single-beam writing technologies.
For this reason, alternative multibeam concepts are being adopted to an increasing extent. Multi-shape beam lithography concepts promise an appreciable increase in throughput especially for very high integration levels (<65 nm technology). The concept is based on the idea of simultaneously providing a plurality of particle beams whose shape and size can be adjusted and whose position on the substrate can be controlled. Two main methods for increasing throughput in particle beam lithography systems are known from the prior art.
On one side are the solutions for multibeam systems which work closely in parallel and use large arrays (104-107 beams) of finely focused particle beam bundles of fixed shape and size (electron beam pixels) which are guided substantially collectively over the substrate to be exposed (stage movement and deflection systems) and which are timed to be switched on and off corresponding to the pattern to be exposed. This pixel concept is represented, e.g., by MAPPER (see C. Klein et al., “Projection maskless lithography (PML2): proof-of-concept setup and first experimental results”, Proceedings SPIE Advanced Lithography 2008, vol. 6921-93), and PML2 (see E. Slot et al., “MAPPER: high throughput maskless lithography”, Proceedings SPIE Advanced Lithography 2008, vol. 6921-92). The disadvantages of these concepts are the high complexity of the beam modulators (thousands to hundreds of thousands of deflection systems/lenses) and the high data transfer rates owing to the fact that the circuit layout must be broken down into individual pixels without losses so that any hierarchy or compression is lost.
The second group of solutions is based on variably shaped beams (also known as shaped probes) which are used to expose desired structures in a variable manner by projecting beam cross sections of different area on a substrate (VSB—variable shaped beam).
U.S. Pat. No. 6,703,629 B2 discloses a fairly complex character projection (CP) method in which different masks are imaged one above the other in two planes, and possibly deflected by a deflection system located therebetween, in such a way that typical recurring beam patterns are formed and are then reduced and used for exposure. The drawbacks of this method consist in the fixed choice of character aperture geometry once it has been produced. Another level of technology requiring different conductive path distances or CP dimensions requires a new pair of character apertures. Another disadvantage of this exposure method consists in that, for reasons inherent to the principle, the current density within a character is constant. Accordingly, a correction of the proximity effect depending on the exposure environment, particularly for a large character, is difficult to accomplish, which limits the usefulness and quality of the generated patterns.
It is known from U.S. Pat. No. 7,005,658 B2 to generate an array of particle beams by means of an aperture plate which is illuminated in parallel in that a shared radiation source is collimated by means of a condenser lens. All of the partial beams are corrected individually by correction lenses and deflection systems in such a way that the field distortion and field curvature occurring in the reduction system disappear. The array of spot beams generated in this way is then guided collectively over the substrate to be exposed, and the partial beams are switched on and off (blanking array) at the proper times corresponding to the desired pattern.
A disadvantage in this method is the large amount of pixel data required for exposing a given pattern. Further, a large number of complicated electrostatic correction elements such as lens arrays and deflection arrays are required for controlling the positions and focus planes of all of the partial beams in the target. Another disadvantage in this method is that the individual beams in the target plane have the same size and are located on a fixed position grid. In order to meet current requirements for positioning accuracy of patterns to be exposed (placement 2-5 nm), multiple exposures must be carried out with a slight positional offset (so-called grayscale exposure or gray beaming) which, as is well known, results in a deterioration of structure edges and reduces productivity.
U.S. Pat. No. 5,981,962 A and U.S. Pat. No. 6,175,122 B1 describe an electron beam lithography system as a distributed arrangement of multiple variable shaped beams working in parallel. The concept, which is conceived as a compact miniature system, uses two pinhole diaphragms per electron-optical system which are imaged on one another and a deflection system arranged therebetween for controlling the beam cross section. An external, uniform magnetic field provides for the focused imaging of the diaphragm planes on one another and on the target. It is suggested that the position deflection in the target is carried out by moving the substrate stage in one direction and by collective, line-by-line electrostatic deflection in orthogonal direction. Every miniaturized VSB system (variable shaped beam system) is supplied by separate electron sources (emitter arrays).
A disadvantage in this method is the 1:1 imaging of the beam-shaping diaphragms in the target plane. The required edge roughness of lithographic structures is presently in the range of a few nanometers for advanced technologies. Accordingly, the quality of the diaphragms to be used would have to be even better, which appears very difficult in terms of technology, particularly with respect to the generation of such small corner radii. Contamination effects at the diaphragm edges in practical operation are likewise effective in a ratio of 1:1 during exposure and therefore limit the quality of the patterns and the life of the diaphragms. Further, the resources required for providing an entire array of radiation sources and for monitoring them individually is disadvantageous. A very high mechanical accuracy and high uniformity of the magnetic field is required in order to maintain the focusing condition simultaneously for all beam bundles, which can only be achieved at great expense.
Further, it remains unclear how collective focusing is to be carried out when the target (e.g., machined wafer) has inevitable residual unevenness. Finally, the collective deflection of all of the beams in the target plane presents a severe limitation on the quantity of beams that can be used simultaneously for exposure or defines a fixed grid for pattern generation. The fixed grid of the beam bundles must constantly be aligned with the necessary reference positions of the patterns to be exposed. In the case of very precise draft grids of the patterns, this substantially limits productivity and/or flexibility of the exposure device.
U.S. Pat. No. 6,614,035 B2 describes a multibeam system whose operation is very similar to that of the known VSB system (single beam). In order to separate a plurality of individually controllable beams in the area of the two beam-shaping diaphragm planes, it is suggested that a diaphragm is arranged at that location which subdivides the conventional illuminated area (diaphragm aperture) by inserting struts into a plurality of openings. Every beam bundle formed in this manner receives four individual deflection systems which are arranged in two portions of the electron-optical column and carry out two independent functions. The upper, first deflection system stage serves to individually adjust the beam cross section and the second defecting system stage serves to adjust the distance between adjacent beam bundles within certain limits. The subsequent reduction and positioning of the array of beam bundles in the lower imaging portion is carried out collectively and in exactly the same way as in a VSB system.
This concept has the disadvantage that the deflection of the beam bundles in two orthogonal directions is carried out in only one plane because, in deflection arrangements with such close proximity of the beams, simultaneous deflection in two orthogonal directions leads to large deflection errors which impair the edge quality and uniformity of the illumination. This also applies to deflection systems for individual control of the mutual beam distance in an array of partial beams that are to be controlled individually. Further, there are no concrete proposals for preventing crosstalk between the adjacent deflection systems which are arranged within a very confined space in proximity to the beam for every beam of the multibeam system.
Another weakness in the concept is the use of a plurality of small variable beam cross sections of comparable size for the exposure process of an entire design layout. Typically, the layout to be exposed does not contain exclusively very small structures even at an advanced level of integration, but rather also larger structures. The gain in productivity which is achieved when exposing many small structures by means of an array of 4 to 16 beams working in parallel can be partially negated when the layout contains a series of relatively large patterns with unfavorable spacing.
It is the object of the invention to find a novel possibility for illuminating a substrate with a plurality of individually shaped, controllable particle beams which permits a high-resolution structuring of substrates with a high substrate throughput without limiting the flexibility of the structure patterns to be illuminated or sacrificing a high substrate throughput for a high flexibility of structure patterns to be illuminated.
In an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams with a particle beam source for emitting a particle beam, an illumination system for shaping and deflecting the particle beam for the illumination of a first aperture diaphragm array, wherein the aperture diaphragm array is a multiple-diaphragm array for generating separate particle beamlets, a second multiple-diaphragm array on which the first multiple-diaphragm array is imaged by means of a condenser lens system and which has diaphragm apertures which are adapted to the first multiple-diaphragm array while taking into account the imaging scale, a multibeam deflector system for individual beam deflection of the separate particle beams, and reduction optics having at least one stage for reduced imaging of the particle beamlets passed by the second aperture diaphragm array onto a substrate, the above-stated object is met according to the invention in that the first multiple-diaphragm array and the second multiple-diaphragm array are constructed as multiple-format diaphragm arrays for generating particle beamlets with different beam cross sections, in that at least three multibeam deflector arrays for individual deflection of the particle beamlets are associated with the first multiple-format diaphragm array and with the second multiple-format diaphragm array, wherein at least a first multibeam deflector array is arranged between the first multiple-format diaphragm array and the second multiple-format diaphragm array in order to generate different cross sections of the particle beamlets after the second multiple-format diaphragm array by means of an individual beam deflection of the individual particle beamlets, at least a second multibeam deflector array is arranged in the vicinity of the second multiple-format diaphragm array in order to individually deflect partial crossovers of the individual particle beamlets or to deliberately blank individual particle beamlets at an exit aperture diaphragm arranged in a crossover downstream, and at least a third multibeam deflector array is arranged downstream of the second multiple-format diaphragm array at a distance of 10-20% of the distance between the multiple-format diaphragm array and the crossover in order to generate different positions of the particle beamlets on the substrate.
The multibeam deflector arrays are advantageously composed of two deflector chips which are arranged one on top of the other and on each of which is provided a deflector cell array comprising identical pairs of electrodes for the individual deflection of individual particle beamlets in the same direction lateral to the optical axis, wherein the pairs of electrodes of the deflector cell arrays on the two deflector chips are oriented in substantially orthogonal directions relative to one another.
In a preferred embodiment form, an illumination group selector with a stigmator arranged downstream is arranged in the beam path of the illumination system for the particle beam emitted by the particle beam source for selecting an illumination group on the first multiple-format diaphragm array.
The multiple-format diaphragm arrays advantageously have at least two large diaphragm apertures with an edge length in the range of 30 μm to 200 μm for exposure with large-format particle beamlet and at least one beam-shaping diaphragm group comprising a plurality of small diaphragm apertures with an edge length in the range of 5 μm to 20 μm for exposure with an array of small-format particle beamlets.
The multiple-format diaphragm arrays can advisably have different beam-shaping diaphragm groups, wherein one of a plurality of different beam-shaping diaphragm groups of the first multiple-format diaphragm array can be illuminated separately by means of the illumination group selector of the illumination system in order to generate differently dimensioned particle beamlets and arrays of particle beamlets.
In a first variant, the multibeam deflector arrays for individual deflection of the particle beamlets are preferably arranged in such a way that the first multibeam deflector array is arranged behind the first multiple-format diaphragm array, the second multibeam deflector array is arranged in front of the second multiple-format diaphragm array, and the third multibeam deflector array is arranged behind the second multiple-format diaphragm array.
In a second variant, the first multibeam deflector array can be arranged in front of the second multiple-format diaphragm array, and the second multibeam deflector array and third multibeam deflector array are arranged behind the second multiple-format diaphragm array.
In a third embodiment form, the first multibeam deflector array is arranged behind and in the immediate vicinity of the first multiple-format diaphragm array, the second multibeam deflector array is arranged in front of and in the immediate vicinity of the second multiple-format diaphragm array, and the third multibeam deflector array is arranged behind the second multiple-format diaphragm array at a distance equal to 10% to 20% of the distance to the next crossover.
In a fourth variant, the first multibeam deflector array can be arranged in front of and in the immediate vicinity of the second multiple-format diaphragm array, the second multibeam deflector array can be arranged behind and in the immediate vicinity of the second multiple-format diaphragm array, and the third multibeam deflector array can be arranged behind the second multiple-format diaphragm array at a distance equal to 10% to 20% of the distance to the next crossover.
In a fifth advantageous variant, the first multibeam deflector array is arranged behind and in the immediate vicinity of the first multiple-format diaphragm array, the second multibeam deflector array is arranged behind and in the immediate vicinity of the second multiple-format diaphragm array, and the third multibeam deflector array is arranged behind the second multiple-format diaphragm array at a distance equal to 10% to 20% of the distance to the next crossover.
In a sixth variant, the first multibeam deflector array is arranged behind and in the immediate vicinity of the first multiple-format diaphragm array, the second multibeam deflector array is arranged in front of and in the immediate vicinity of the second multiple-format diaphragm array, the third multibeam deflector array, as a first precision positioning array, is arranged behind and in the immediate vicinity of the second multiple-format diaphragm array, and a fourth multibeam deflector array, as second precision positioning array, is arranged behind the third multibeam deflector array.
In all of the variants mentioned above, a stigmator having at least two stages is advisably arranged between the third multibeam deflector array and the reduction system imaging on the substrate in order to correct for tolerance-dependent distortion.
It has proven advantageous to arrange the pairs of electrodes of the deflector cell array of every multibeam deflector array orthogonal to one another on the deflector chips located one on top of the other.
Further, when a beam-shaping diaphragm group is used in an array with a format (n×m), the multibeam deflector arrays advisably have a deflector cell array with at least (n+2) rows and (m+2) columns of deflector cells of parallel electrode pairs on every deflector chip, and no voltage is applied to the outside deflector cells.
To compensate for crosstalk between adjacent deflector cells of the deflector cell array, means for calculating voltage and regulating voltage are advantageously provided in which exclusively the crosstalk effect of the respective eight directly adjacent deflector cells is taken into account for each particle beamlet considered individually in order to calculate the correction of the deflection voltages within a deflector cell array.
In this connection, the multibeam deflector arrays preferably have fast pipeline structures comprising multi-channel active components for fast independent control of the beam position, cross-sectional area, and individual crossover position for each particle beamlet, wherein the pipeline structures advisably contain multi-DA converters, demultiplexers, and multi-operational amplifiers.
It has proven advisable to provide a coupling matrix for controlling all of the multibeam deflector arrays in order to achieve an independent control of the position and size of the particle beamlet on the substrate and of the individual crossover position for each particle beamlet of an array of particle beamlets in the X-direction and Y-direction.
To increase the flexibility of the exposable structure patterns, at least the second multiple-format diaphragm array has, in addition, special characters (structure patterns) for exposing repetitive structures.
Further, it is advisable when the multiple-format diaphragm arrays have a plurality of different beam-shaping diaphragm groups with identical diaphragm apertures or a plurality of beam-shaping diaphragm groups with different diaphragm apertures.
To minimize the quantity of individual exposure steps on the substrate, a pre-programmable control unit is advisably provided for controlling the illumination group selector with stigmators arranged downstream in order to optimize the selection of illumination groups on the first multiple-format diaphragm array.
The basic idea behind the invention is the known concept of variable shaped beams (VSB concept) which, as a single beam concept, makes it possible to combine a relatively large maximum area of the beam cross section with an array of variably controllable shaped beams with small beamlet areas. In the course of exposing a substrate, fast deflecting processes can be used to switch between these beam modulation variants electron-optically. Further, steps which succeed in minimizing the crosstalk between the electrostatic deflection systems which are provided separately for each particle beamlet are described for the deflection of the variable, finely-structured shaped beams.
The inventive solution makes it possible to realize an illumination of a substrate with particle radiation which permits a high-resolution structuring of substrates with a high substrate throughput without limiting the flexibility of the structure patterns to be illuminated or sacrificing substrate throughput for a flexibility of the structure patterns that can be illuminated.
The above and other features of the invention including various novel details of construction and combinations of parts, and other advantages, will now be more particularly described with reference to the accompanying drawings and pointed out in the claims. It will be understood that the particular method and device embodying the invention are shown by way of illustration and not as a limitation of the invention. The principles and features of this invention may be employed in various and numerous embodiments without departing from the scope of the invention.
In the accompanying drawings, reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale; emphasis has instead been placed upon illustrating the principles of the invention. Of the drawings:
As is shown schematically in
The generation of an array of variably controllable particle beamlets 118 within the beam modulator system 3 is characterized in that a first multiple-format diaphragm array 41 and a second multiple-format diaphragm array 42 are arranged in two diaphragm planes and are outfitted in each instance with equivalent beam-shaping diaphragm groups 45 comprising arrays of small openings (5 to 20 μm) associated with one another and, optionally, additional larger openings (30 to 200 μm). The first multiple-format diaphragm array 41 is imaged on the second multiple-format diaphragm array 42 by a condenser system 31-32 (preferably in a scale of 1:1).
On their path through the condenser system 31-32 to the second multiple-format diaphragm array 42, the particle beamlets 118 pass through at least one group deflection system 35 and at least one multibeam deflector array 51 and 52 of the multideflector system 5 in addition to the condenser system 31-32.
When the first multiple-format diaphragm array 41 is illuminated by an illumination group 117 installed in the illumination system 2 in the region of a beam-shaping diaphragm group 45 (see
The multibeam deflector arrays 51 and 52 are advisably arranged in the vicinity of one of the multiple-format diaphragm arrays 41 and/or 42. Following this at a distance of 10% to 20% of the distance to the next crossover 112 is the third multibeam deflector array 35 which serves as a precision positioning system for the individual positioning of the individual particle beamlets 118 on the substrate 9. In this connection, it is necessary that at least one multibeam deflector array 51 is situated between the two multiple-format diaphragm arrays 41 and 42. This multibeam deflector array 51 can be arranged optionally in the vicinity of either the first multiple-format diaphragm array 41 or the second multiple-format diaphragm array 42.
The positioning of a multibeam deflector array 51 and 52, respectively, shown in
In every case, a cropping of each particle beamlet 118 accordingly takes place at the location of the second multiple-format diaphragm array 41 depending on its actual individual displacement through the at least one multibeam deflector array 51 located between the multiple-format diaphragm arrays 41 and 42.
The use of the specially structured multibeam deflector arrays 51 and 52, whose specific construction is shown in
The multi-stage group deflection system 35 in the area of the condenser system 31-32 serves to control particle beamlets 118 formed as a result of the selection of an illumination group 117 in the region of larger diaphragm apertures 44 (30 to 200 μm edge dimension) of the multiple-format diaphragm array 41 (see
Depending on a structure pattern to be generated on the substrate 91, an illumination group 117 for selective illumination of a diaphragm aperture 44 which is shaped in a definite manner or a beam-shaping diaphragm group 45 of the first multiple-format diaphragm array 41 is automatically selected and controlled in the illumination system 2 of the particle beam column which is characterized by a linear optical axis 115 from the beam outlet of the particle beam source 1 to the target on the substrate 91 to be exposed. This selection of the beam-shaping diaphragms is carried out by means of a suitable deflection of the particle beam 11 by means of the illumination group selector 22.
When using a first multiple-format diaphragm array 41 according to
Other variants for beam shaping of an individual particle beam cross section having a relatively large variable area by means of imaging two diaphragms on top of one another with a beam deflection system arranged therebetween are carried out in the manner already known from the prior art (e.g., U.S. Pat. No. 6,175,122 B1, U.S. Pat. No. 6,614,035 B2). Also, the generation and projection of special characters 46 (see
The stigmator 23 is provided for correcting possible astigmatism in the crossover 111 of the illumination system 2.
The principal innovation of the invention consists in the additional possibility of the beam cross section control of an array (group) of particle beamlets 118 by means of multibeam deflector arrays 51, 52 in the vicinity of at least one of the multiple-format diaphragm arrays 41 and 42 so that variably shaped particle beamlets 118 of small beam cross-sectional area (5 to 20 μm) can be generated in an individually controllable manner simultaneously or successively within the same particle beam column without a mechanical changing of diaphragms.
The completely independent control of the size of the individual beam cross section in two coordinate directions lateral to the beam direction and the additional individual position deflection of every particle beamlet 118 on the substrate 91 make possible a substantially faster simultaneous exposure of a plurality of different structures of a chip design to be exposed on the substrate 91.
However, since a chip design to be exposed on the substrate 91 usually also contains some large structures or frequently recurring characters 46, it is often advantageous to be able to select the most productive beam-shaping diaphragm group 45 (see
When the first multiple-format diaphragm array 41 is illuminated by an illumination group 117 installed in the illumination system 2 in the region of a beam-shaping diaphragm group 45 (see
The at least one multibeam deflector array 51, 52 makes possible an individual displacement of every individual particle beamlet 118 generated through the first multiple-format diaphragm array 41 in two coordinate directions as will be explained in more detail in the following with reference to
A cropping of each particle beamlet 118 depending on its individual lateral displacement is carried out at the location of the second multiple-format diaphragm array 42 as is indicated in
The use of specially structured multibeam deflector arrays 51, 52 and possibly additional multibeam deflector arrays 53 or 54, whose specific constructions are shown in
A multi-stage group deflection system 35 in the area of the twofold condenser system 31-32 serves to control the particle beamlets 118 when an illumination group 117 in the area of larger diaphragm apertures 44 (30 to 200 μm) of the multiple-format diaphragm array 41 is selected.
When a three-stage group deflection system 35 is used, as is designated more exactly in
Since the multiple-format diaphragm arrays 41 and 42 are subjected to constant bombardment by the particle beam 11 and particle beamlets 118, it can be advantageous to arrange a plurality of multiple-format diaphragm arrays 41, 42 in such a way that they are displaceable lateral to the optical axis when required (e.g., because of wear or other design requirements) as coupled, i.e., etched on a chip, multiple-format diaphragm arrays (41′, 41″, . . . and 42′, 42″, . . . , respectively) and are therefore exchangeable without having to readjust the particle beam column. A variant of this kind is shown by way of example in
Further, a correction lens 33 can be provided in the beam modulator system 3 between the condenser lenses 31 and 32. This correction lens 33 makes possible a highly accurate angular orientation of the image of the first multiple-format diaphragm array 41 at the location of the second multiple-format diaphragm array 42 to compensate for mechanical adjustment tolerances.
The portion of the illumination control and multi-shape beam control described above is followed farther along the beam path of the particle beam column in direction of the substrate stage 9 by a reduction system 6 which carries out a reduced imaging of the second multiple-format diaphragm array 42 on the substrate 91 located on the substrate stage 9 by means of electromagnetic lenses 61 and 62. Apart from the two-stage reduction optics 61-62 shown in the drawing, optics with only one or with three lenses can also be used.
The reduction system 6 is outfitted with diverse deflection systems for controlling the particle beam positions on the substrate 91 such as beam return system 63, beam tracking 65, micro beam deflection 66 and macro beam deflection 67 as well as stigmators 64 and 69 and a fast focusing lens 68. The imaging scale for the reduced imaging of the second multiple-format diaphragm array 42 on the substrate 91 is typically 30:1-100:1.
A third multibeam deflector array 53 (as precision positioning system for the position of every particle beamlet 118 on the substrate 91) is located at a distance of about 10-20% of the distance between the second multiple-format diaphragm array 42 and the next crossover 112. This precision positioning system 53 is identical in principle to the multibeam deflector arrays 51 and 52, but has a different scaling factor. It permits a small individual position displacement of every particle beamlet 118 (5 to 20 μm) lateral to the beam direction.
The electronic control of the two respective deflector cell arrays 57 within each of the multibeam deflector arrays 51, 52 and 53 is carried out by an individual calibrated coupling matrix which is generated and suitably further processed, according to
A two-stage beam return system 63 and a two-stage stigmator 64 are arranged in the beam path in front of the first reduction stage (lens 61). The beam return system 63 ensures that the particle beamlets 118 are deflected again to the optical axis 115 by the respective beam-shaping diaphragm group 45 being used, which should advisably be located outside the optical axis 115, without influencing the position of the crossover 112 along the optical axis 115. This serves to reduce aberrations. Also, the stigmator 64 can help to reduce distortion.
The reduced intermediate image 119 of the portions of the partial beam cross sections 47 which pass through the diaphragm apertures 44 and which were defined by the illumination area 117 through the first multiple-format diaphragm array 41 (
In so doing, the aperture diaphragm 7 defines the substrate aperture and serves as a blanking diaphragm for temporarily unused particle beamlets 118. The beam position of the reduced image of the beam-shaping diaphragm group 45 being used can be positioned on the substrate 91 in the conventional manner by microbeam deflection 66 and macrobeam deflection 67.
Further, according to the construction shown in
With the construction of the particle beam column according to
In this constructional variant, however, the condenser lens 21 of the illumination system 2 provides for a telecentric illumination of the first multiple-format diaphragm array 41. The illumination group selector 22 serves for beam alignment and specific selection (i.e., spatially defined illumination) of a determined beam-shaping diaphragm group 45 on the multiple-format diaphragm array 41 (
As in the first variant, the condenser lens system 31-32 provides for a 1:1 imaging of the first multiple-format diaphragm array 41 on the second multiple-format diaphragm array 42. The multibeam deflector arrays 51 and 52 make it possible to individually displace each of the particle beamlets 118 generated by the second multiple-format diaphragm array 41 within the array in two coordinate directions. A cropping of every particle beamlet 118 according to its individual displacement is carried out at the location of the second multiple-format diaphragm array 42. As in the first variant, three other deflection systems 351, 352, 353 in the area of the condenser lens system 31-32 serve to control beam-shaping diaphragm groups 45 with large beam cross sections. Also, lens 33 is again used for highly accurate angular orientation of the image of the first multiple-format diaphragm array 41 at the location of the second multiple-format diaphragm array 42.
In contrast to the first constructional variant according to
The main advantage of the variant according to
A principal advantage of the imaging variant shown in
Since the total flow of particles is always higher in the illumination system 2 than in the following imaging stages, significant interactions take place in the crossover 110 of the particle beamlets 118. Such interactions can contribute to a disruptive energy expansion in the beam which causes additional chromatic errors in the subsequent lenses and accordingly ultimately impairs resolution. Therefore, the arrangement of the particle columns described above with reference to
In the following, the construction and operation of the multibeam deflector arrays 51 and 52 and precision positioning arrays 53 and 54 will be discussed in more detail. The latter are constructed so as to have substantially the same construction and operation at the multibeam deflector arrays 51 and 52 but are reduced by scaling.
The multibeam deflector arrays 51 to 54 each have two deflector cell arrays 57 which are closely (<1 mm) adjacent to one another in the beam direction of the particle beamlets 118 and are oriented laterally substantially orthogonal to one another and substantially comprise a uniform arrangement of electrode pairs 573 and screen electrodes 574. A 90-degree arrangement of the electrode pairs 573 is shown in
The control of the multibeam deflector arrays 51, 52, 53, whose hardware embodiment is shown in
In order to determine the deflection values for the individual deflector cells 571 of a plurality of multibeam deflector arrays 51, 52, 53 (and possibly 54) from the values for the individual format size (Sxi, Syi) and the individual precision position (SMxi, SMyi) of every particle beamlet 118 by means of an individual coupling matrix and to then carry out a compensation of the crosstalk caused by deflector cells 571 adjacent in the plane, one or more digital computing units are required for implementing linear transformations consisting of multiplications and additions. Dummy deflector cells 572 which are provided in the design of the deflector cell arrays 57 do away with the necessity of special handling of the particle beamlets 118 lying at the edge and in the corners of the particle beamlet array so that all deflection values can be calculated according to the same algorithm, although this algorithm relies on individual transformation coefficients or coupling coefficients. A high degree of parallelizability in the calculation and control electronics is ensured by the property of the design of the deflector cell arrays 57 whereby an outer row of passive deflector cells (dummy deflector cells 572) is arranged around the active deflector cells 571 which each deflect a particle beamlet 118.
Since the coupling coefficients depend on the actual alignment state of the deflector cell array 57 of the particle beamlets 118, the transformations cannot be processed as part of an offline data processing, but rather must be carried out in real time during the exposure.
For reasons of productivity, computing architectures which work in a purely sequential manner (deflection value after deflection value, beamlet after beamlet) cannot be used. Computing blocks which operate in parallel and which, e.g., are associated in each instance with a particle beamlet 118 or a row or column of particle beamlets 118 in a multibeam deflector system comprising three or four multibeam deflector arrays 51 to 54 are required in order to achieve sufficient throughput rates. Further, by reducing the algorithm to sub-operations of addition and multiplication which are carried out in blocks working in parallel, it is possible to combine the calculation functions with those of data transfer so that pipeline structures or systolic processor arrays can be used. Arrays of this kind can be realized in modern programmable logic circuits (FPGAs) having very high scale integration which also provide the necessary bandwidth for input and output.
After digital calculation of the individual deflection values for each deflector chip 55, a digital-to-analog conversion must be carried out to provide the deflection potentials for the individual deflector cells 571. Since every deflector cell 571 comprises pairs of electrodes 573 and, therefore, requires two control voltages symmetric to a ground potential (screen electrode 574), a total of 12n voltage potentials must be generated for controlling n particle beamlets 118 in six deflector planes (i.e., in three double deflector arrays with deflection directions X and Y) of the first and second multibeam deflector arrays 51 and 52 and the third multibeam deflector array 53 operating as precision positioning array. In implementing this circuit component, it is useful to use multichannel active components such as multi-DA converters 58 with corresponding multi-operational amplifiers.
As the quantity n of particle beamlets 118 to be controlled increases, the construction and connection technology for supplying the 12n voltages of DAC boards located outside the electron-optical column in the vacuum region of the particle beam column becomes increasingly difficult. Therefore, after n>64, instead of transferring the individual analog voltages separately, a preferred solution is to transfer the digital control values by multiplexing via a few serial high-speed connections with data rates of greater than 1 gigabyte/second into the vacuum region of the particle beam column. In this respect, the transfer can be realized by means of differential electric signals or optically by means of glass fibers or free space optics. The demultiplexing of the control data and D-A conversion thereof can then be carried out directly on each deflector chip 55 of the multibeam deflector system 5.
A control of the kind mentioned above is shown schematically in
This circuit arrangement solves the problem of the signal feed and also satisfies the requirement for short setting times for the deflector cell arrays 57 through a compact construction and very short, low-capacitance control lines.
As is shown in
To this end, an individual deflector cell 571 comprising an electrode pair 573 and two screen electrodes 574 is associated with each individual diaphragm aperture 44 of the beam-shaping diaphragm group 45 of a multiple-format diaphragm array 41 or 42 as is shown schematically in
In this connection, each of the screen electrodes 574 which are located between the parallel-oriented electrode pairs 573 of two deflector cells 571 can simultaneously shield the two neighboring deflector cells 571. In spite of the screen electrodes 574, the fields of the individual deflector cells 571 on the multibeam deflector arrays 51, 52 and the precision positioning array 53 act not only on the particle beamlet 118 passing through its associated individual deflector cell 571 but also on the adjacent particle beamlets 118 (crosstalk). This crosstalk is corrected in the following manner:
When an 8×8 beam-shaping diaphragm group 45 is used in an advantageous manner, it has proven favorable, for example, to outfit the deflector chips 55 with 10×10 deflector cells 571, 572. In order to present the construction of optimized deflector cell arrays 57 in a simpler and clearer manner, the multibeam deflector arrays 51 and 52 shown in
The following estimates for the crosstalk behavior of the deflector cell array 57 are given for a real 10×10 deflector cell array 57 using this scheme in the same way with an 8×8 array of active deflector cells 571.
Disregarding the crosstalk for the time being, the voltages at the 10×10 deflector cells 571 are:
Uij0i,j=0 . . . 9.
The outer rows of the deflector cell array 57 are dummy deflectors 572 to which no voltage is applied, i.e.:
U0j0=U9j0=Ui00=Ui90=0i,j=0 . . . 9.
The actual deflector voltages for the active deflector cells 571 are:
Uij0i,j=1 . . . 8.
By inserting dummy deflectors 572, every active deflector cell 571 “sees” the same surroundings. Therefore, the “active deflector cell array” 57 comprises only the inner 8×8 active deflector cells 571 whose voltages must be corrected owing to crosstalk. Let the corrected voltages be:
Uij0i,j=0 . . . 9.
Since the outer frames around the active deflector cells 571 are dummy deflectors 572, then:
U0j=U9j=Ui0=Ui9=0i,j=0 . . . 9.
The deflecting action of an individual deflector cell 571 is changed by the crosstalk due to the interfering effect of the other deflector cells 571 of the deflector cell array 57. Since the crosstalk effect is small, it can be considered as sufficient to allow for the interfering effect of the eight immediate neighbors of a deflector cell 571 in question. The simplest possibility for correcting crosstalk consists in applying a correcting voltage to the deflector cells 571 in question which compensate for the crosstalk effect of the voltages of the eight directly adjoining deflector cells 571.
In this regard, the following exceptions are made:
Every deflector cell 571 within a field of nine adjacent deflector cells 571 and 572 can be considered sufficiently defined by the exceptions mentioned above.
The eight neighboring cells of a selected, inside deflector cell 571 are designated by the symbols LO, LM, LU, MO, MU, RO, RM, RU which identify the positions of the eight neighbors according to the following scheme:
##STR00001##
Assuming that only the inner deflector cell 571 of the nine deflector cells 571 in question are controlled and causes the deflection “1” for “its” particle beamlet 118, this gives a deflection of the following magnitude due to the crosstalk on the eight adjacent particle beamlets 118:
CLO,CLM,CLU,CMO,CMU,CRO,CRM,CRU.
The quantities CLO, CLM, etc. are the crosstalk coefficients. In case of a deflector cell array 57 comprising uniform, structurally identical deflector cells 571, 572, these quantities are typically less than 5%. In theory, they can be determined by suitable modeling or even empirically.
It is further assumed that these coefficients are identical for all of the inner deflector cells 571.
Let an inner deflector cell 571 in the 10×10 deflector cell array 57 considered above have the uncorrected control voltage Uij0. The corrected control voltage would then be:
Uij=Uij0−CRU*Ui−1,j−10−CMU*Ui−1,j0−CLU*Ui−1,j+10−CRM*Ui,j−10*−CLM*Ui,j+10−CRO*Ui+1,j−10−CMO*Ui+1,j0−CLO*Ui+1,j+10i,j=1 . . . 8
In this respect, it is not taken into account (according to the first exception mentioned above) that the correction of the control voltage of an adjacent deflector cell 571 also acts on the next deflector cell but one 571 or 572 due to the crosstalk (higher-order effects are disregarded). This appears allowable because the coefficients CLO, CLM, etc. are quantitatively less than 0.05.
While this invention has been particularly shown and described with references to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention encompassed by the appended claims.
Doering, Hans-Joachim, Elster, Thomas, Slodowski, Matthias, Heinitz, Joachim
| Patent | Priority | Assignee | Title |
| 10388488, | Jun 02 2017 | NuFlare Technology, Inc. | Multi charged particle beam drawing apparatus and multi charged particle beam drawing method |
| 10658157, | Mar 14 2016 | Nikon Corporation | Exposure apparatus and exposure method, lithography method, and device manufacturing method |
| 11276558, | Mar 14 2016 | Nikon Corporation | Exposure apparatus and exposure method, lithography method, and device manufacturing method |
| 8558191, | Feb 14 2012 | Canon Kabushiki Kaisha | Charged particle beam lens and charged particle beam exposure apparatus |
| 8610083, | Mar 18 2011 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods providing electron beam writing to a medium |
| 8890092, | Jan 28 2013 | Industry—University Cooperation Foundation Sunmoon University; Industry-University Cooperation Foundation Sunmoon University | Multi-particle beam column having an electrode layer including an eccentric aperture |
| 9305740, | Jun 17 2013 | ICT Integrated Circuit Testing Gesellschaft fur Halbleiterpruftechnik mbH | Charged particle beam system and method of operating thereof |
| Patent | Priority | Assignee | Title |
| 5905267, | Jun 12 1996 | Canon Kabushiki Kaisha | Electron beam exposure apparatus and method of controlling same |
| 5929454, | Jun 12 1996 | Canon Kabushiki Kaisha | Position detection apparatus, electron beam exposure apparatus, and methods associated with them |
| 5981954, | Jan 16 1997 | Canon Kabushiki Kaisha | Electron beam exposure apparatus |
| 5981962, | Jan 09 1998 | VISTEC LITHOGRAPHY | Distributed direct write lithography system using multiple variable shaped electron beams |
| 6014200, | Feb 24 1998 | Nikon Corporation | High throughput electron beam lithography system |
| 6166387, | Mar 04 1996 | Canon Kabushiki Kaisha | Electron beam exposure apparatus and method |
| 6175122, | Jan 09 1998 | VISTEC LITHOGRAPHY | Method for writing a pattern using multiple variable shaped electron beams |
| 6274877, | May 08 1997 | Canon Kabushiki Kaisha | Electron beam exposure apparatus |
| 6515409, | Dec 13 1999 | Canon Kabushiki Kaisha | Charged-particle beam exposure apparatus, exposure system, control method therefor, and device manufacturing method |
| 6603128, | Apr 27 2000 | Canon Kabushiki Kaisha | Charged-particle beam exposure apparatus and device manufacturing method |
| 6614035, | Jan 30 2002 | VISTEC LITHOGRAPHY | Multi-beam shaped beam lithography system |
| 6680481, | Jun 05 2001 | Nikon Corporation | Mark-detection methods and charged-particle-beam microlithography methods and apparatus comprising same |
| 6703629, | Jul 27 2000 | Kabushiki Kaisha Toshiba | Charged beam exposure apparatus having blanking aperture and basic figure aperture |
| 6784442, | Dec 28 2001 | Canon Kabushiki Kaisha; Advantest Corporation | Exposure apparatus, control method thereof, and device manufacturing method |
| 7005658, | May 25 2001 | Canon Kabushiki Kaisha | Charged particle beam exposure apparatus and method |
| 7049585, | Jul 27 2000 | Ebara Corporation | Sheet beam-type testing apparatus |
| 7157703, | Aug 30 2002 | Ebara Corporation | Electron beam system |
| 7253417, | Dec 17 2002 | ICT, INTEGRATED CIRCUIT TESTING GESELLSCHAFT, FUR HALBLEITERPRUFTECHNIK MBH | Multi-axis compound lens, beam system making use of the compound lens, and method using the compound lens |
| 7504624, | May 13 2005 | HITACHI HIGH-TECH CORPORATION | Charged particle beam device |
| 7781748, | Apr 03 2006 | IMS Nanofabrication GmbH | Particle-beam exposure apparatus with overall-modulation of a patterned beam |
| 7825377, | Mar 31 2003 | Hitachi High-Technologies Corporation | Electron beam apparatus with aberration corrector |
| 20030141462, | |||
| 20070114409, | |||
| 20080149846, | |||
| 20090014649, | |||
| 20090184243, | |||
| 20090200495, | |||
| 20100178602, | |||
| 20110084220, | |||
| 20110114838, | |||
| 20110163229, | |||
| 20110226968, | |||
| GB2349737, |
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