A system includes a continuous thin-film ferromagnetic layer, N magnetic tunnel junction (mtj) devices, and N write structures. The continuous thin-film ferromagnetic layer includes N modified regions. Each of the N modified regions is configured to stabilize a magnetic domain wall located in the continuous thin-film ferromagnetic layer. Each of the N mtj devices includes one of N portions of the continuous thin-film ferromagnetic layer. Adjacent mtj devices of the N mtj devices are separated by one of the N modified regions. Each of the N write structures is configured to receive current and generate a magnetic field that magnetizes a different one of the N portions of the continuous thin-film ferromagnetic layer. N is an integer greater than 2.
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16. A method comprising:
fabricating first and second magnetic tunnel junction (mtj) devices adjacent to one another such that the first and second mtj devices share a continuous ferromagnetic layer;
modifying the continuous ferromagnetic layer at a location between the first and second mtj devices such that the modification is configured to stabilize a magnetic domain wall located in the continuous ferromagnetic layer at the location; and
fabricating first and second write structures configured to receive current and generate a magnetic field that magnetizes first and the second portions of the continuous ferromagnetic layer corresponding to the first and second mtj devices, respectively.
12. A system comprising:
a continuous thin-film ferromagnetic layer including N modified regions, each of the N modified regions configured to stabilize a magnetic domain wall located in the continuous thin-film ferromagnetic layer;
N magnetic tunnel junction (mtj) devices, each of the N mtj devices comprising one of N portions of the continuous thin-film ferromagnetic layer, wherein adjacent mtj devices of the N mtj devices are separated by one of the N modified regions; and
N write structures, each of the N write structures configured to receive current and generate a magnetic field that magnetizes a different one of the N portions of the continuous thin-film ferromagnetic layer, wherein N is an integer greater than 2.
1. A system comprising:
a first ferromagnetic layer;
a first magnetic tunnel junction (mtj) device comprising a first portion of the first ferromagnetic layer, a first pinned layer, and a first insulating layer disposed between the first portion of the first ferromagnetic layer and the first pinned layer;
a second mtj device comprising a second portion of the first ferromagnetic layer, a second pinned layer, and a second insulating layer disposed between the second portion of the first ferromagnetic layer and the second pinned layer; and
first and second write structures configured to receive current and generate a magnetic field that magnetizes the first and the second portions of the first ferromagnetic layer, respectively.
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The disclosure relates to magnetic elements, and, more particularly, to magnetic elements having reduced switching energy.
A magnetic tunnel junction (MTJ) device includes two ferromagnetic layers separated by a thin insulator. A relative magnetization direction of each of the ferromagnetic layers determines a state of an MTJ. An MTJ typically includes two states of resistance, a low resistance state and a high resistance state. An MTJ is in a high resistance state when both of the ferromagnetic electrodes of the MTJ are magnetized in the same direction. An MTJ is in a low resistance state when the ferromagnetic layers are magnetized in opposite directions. Relative magnetization directions of an MTJ device may be changed by an applied external magnetic field.
MTJ devices may find application in magnetic storage devices. For example, MTJ devices find application in read-heads of hard disk drives in which the magnetic state of the hard disk platter may be determined based on the resistance of an MTJ read head flying over the platter. MTJ devices may also find application in magnetoresistive random access memory in which data may be stored in and read from MTJ devices.
An array of magnetic tunnel junction (MTJ) devices according to the present disclosure may share a continuous free layer (hereinafter “free layer”). Each of the MTJ devices of the array may include a portion of the free layer, a pinned layer, and an insulating layer that is sandwiched between the pinned layer and the free layer. The free layer of the present disclosure may also include modifications which are located between each of the MTJ devices of the array. The modifications may serve to stabilize magnetic domain walls located in the free layer. The modifications may include, but are not limited to, notches in the free layer, ion implanted regions in the free layer, and a thin film strain layer deposited over the free layer.
A plurality of write-current structures may be fabricated in proximity to the MTJ devices. Each write-current structure may conduct current and generate a magnetic field that magnetizes a corresponding portion of the free layer. For example, each write-current structure may be configured to magnetize a free layer of a corresponding MTJ device. Write-current structures may magnetize the free layer of each MTJ in one of at least two directions.
A magnetic domain wall may form in the free layer between two adjacent MTJ devices when the adjacent MTJ devices are magnetized in different directions. The modification to the free layer between the two adjacent MTJ devices may serve to stabilize the location of this domain wall that is present in the region of the modification. If the modification was not present in the free layer, the domain wall formed in the free layer would be freer to move, for example, in the presence of thermal energy. In turn, if the domain wall was free to move, the state of the MTJ device that includes the domain wall in the free layer would be uncertain.
In summary, the write-current structures may magnetize the portions of the free layer corresponding to the MTJ devices and therefore may set up domain walls between the MTJ devices (i.e., at the modifications of the free layer). The modifications may then maintain the domain walls at the locations where the domain walls are formed since it may be more energetically favorable for the domain walls to reside at the modifications than to move to other portions of the free layer and away from the modifications.
An array of MTJ devices sharing a continuous free layer as described above may be included in a magnetic logic system. For example, a magnetic logic system according to the present disclosure may include two MTJ devices and two corresponding write-current structures. The write-current structures of the magnetic logic system may receive current inputs and set the state of the two MTJ devices. Output circuitry of the magnetic logic system may then determine the combined state (i.e., the output of the system) of the two MTJ devices based on the resistance of the two MTJ devices. As described hereinafter, such a magnetic logic system may perform various logic operations, such as AND, OR, or XOR operations. Furthermore, the magnetic logic system as described herein may be referred to as a non-volatile logic system, since the most recent inputs (e.g., the current inputs to the write-current structures) are stored in the free layer until rewritten.
In one example according to the present disclosure, a system comprises a first ferromagnetic layer, a first MTJ device, a second MTJ device, and first and second write structures. The first MTJ device comprises a first portion of the first ferromagnetic layer, a first pinned layer, and a first insulating layer disposed between the first portion of the first ferromagnetic layer and the first pinned layer. The second MTJ device comprises a second portion of the first ferromagnetic layer, a second pinned layer, and a second insulating layer disposed between the second portion of the first ferromagnetic layer and the second pinned layer. The first and second write structures are configured to receive current and generate a magnetic field that magnetizes the first and the second portions of the first ferromagnetic layer, respectively.
In some implementations, the system further comprises a modification to the first ferromagnetic layer between the first and second portions of the first ferromagnetic layer. The modification is configured to stabilize a magnetic domain wall located in the region of the modification. In some examples, the modification includes an ion implantation region. In other examples, the modification includes a notch that is defined in the first ferromagnetic layer. In still other examples, the modification comprises a thin-film deposited over the first ferromagnetic layer. The thin-film is deposited such that the thin-film introduces strain in the first ferromagnetic layer and stabilizes a domain wall located in the region of the thin-film.
In another example according to the present disclosure, a system comprises a continuous thin-film ferromagnetic layer, N MTJ devices, and N write structures. The continuous thin-film ferromagnetic layer comprises N modified regions. Each of the N modified regions is configured to stabilize a magnetic domain wall located in the continuous thin-film ferromagnetic layer. Each of the N MTJ devices comprises one of N portions of the continuous thin-film ferromagnetic layer. Adjacent MTJ devices of the N MTJ devices are separated by one of the N modified regions. Each of the N write structures is configured to receive current and generate a magnetic field that magnetizes a different one of the N portions of the continuous thin-film ferromagnetic layer. N is an integer greater than 2. In some implementations, each of the N modified regions include at least one of an ion implantation region, a notch defined in the continuous thin-film ferromagnetic layer, or a strained region defined by a thin-film deposited over the modified region.
In another example according to the present disclosure, a method comprises fabricating first and second MTJ devices adjacent to one another such that the first and second MTJ devices share a continuous ferromagnetic layer. The method further comprises modifying the continuous ferromagnetic layer at a location between the first and second MTJ devices such that the modification is configured to stabilize a magnetic domain wall located in the continuous ferromagnetic layer at the location. Additionally, the method comprises fabricating first and second write structures configured to receive current and generate a magnetic field that magnetizes first and the second portions of the continuous ferromagnetic layer corresponding to the first and second MTJ devices, respectively.
In some implementations, modifying the continuous ferromagnetic layer includes forming a notch in the surface of the continuous ferromagnetic layer at the location between the first and second MTJ devices. In other implementations, modifying the continuous ferromagnetic layer includes implanting ions in the continuous ferromagnetic layer at the location between the first and second MTJ devices. In still other implementations, modifying the continuous ferromagnetic layer includes depositing a thin-film over the continuous ferromagnetic layer at the location between the first and second MTJ devices. The thin-film is configured such that the thin-film introduces strain in the continuous ferromagnetic layer and stabilizes a domain wall at the location.
The details of one or more examples are set forth in the accompanying drawings and the description below. Other features, objects, and advantages will be apparent from the description and drawings, and from the claims.
Each of the magnetoresistive devices of array 100 includes three layers: a pinned layer, an insulating layer, and free layer 102. Pinned layers 104-1, 104-2, 104-3, 104-4, and 104-5 (collectively “pinned layers 104”) for each of the magnetoresistive devices may be separated from one another. In other words, pinned layers 104 may be insulated from one another. Insulating layers 106-1, 106-2, 106-3, 106-4, and 106-5 (collectively “insulating layers 106”) separate the pinned layers 104 of the magnetoresistive devices from free layer 102. Although insulating layers 106 are illustrated as separated from one another, in some examples, insulating layers 106 may form a single continuous layer along free layer 102. Although pinned layers 104 are illustrated as separated from one another, in some examples, pinned layers 104 may form a single continuous layer along a single continuous insulating layer.
Each magnetoresistive device is defined by one of pinned layers 104, one of insulating layers 106, and an area of free layer 102 that interfaces with the one of insulating layers 106 and the one of pinned layers 104. For example, pinned layer 104-2, insulating layer 106-2, and free layer 102 form a first magnetoresistive device 108-A. Pinned layer 104-3, insulating layer 106-3, and free layer 102 form a second magentoresistive device 108-B. Pinned layer 104-4, insulating layer 106-4, and free layer 102 form a third magnetoresistive device 108-C. Since magnetoresistive devices 108-A, 108-B, 108-C may generally include an insulating layer sandwiched between two ferromagnetic layers (e.g., pinned layers 104 and free layer 102), magnetoresistive devices 108-A, 108-B, 108-C may be referred to as magnetic tunnel junctions (MTJs) 108-A, 108-B, 108-C.
Pinned layers 104 may include ferromagnetic materials, such as Co, Ni, Fe, and their binary and ternary alloys. Additionally, or alternatively, pinned layers 104 may include manganese alloys used to provide pinning if pinning by means of thickness alone is not desired. The thickness of pinned layer 104 may be on the order of 1 nm or greater, for example. Pinned layers 104 may each be magnetized. The direction of magnetization for each of pinned layers 104 is indicated using a left facing arrow “←.” Accordingly, as illustrated in this disclosure, pinned layers 104 may each be magnetized in the same direction.
Free layer 102 may include various ferromagnetic materials. For example, free layer 102 may include, but is not limited to, Nickel-Iron, including permalloy, Nickel-Iron ternary alloys, CoFe, and Cobalt-containing ternary alloys. The thickness of free layer 102 may be on the order of 1 nm or greater, for example.
Since free layer 102 may be a continuous layer of material, free layer 102 may interface with a plurality of insulating layers 106 that form an insulating barrier between free layer 102 and pinned layers 104. Insulating layers 106 may be a thin oxide layer, e.g., aluminum oxide or magnesium oxide. The thickness of insulating layers 106 may be on the order of 1 nm, for example.
Application of a voltage across insulating layers 106 (e.g., by connection of a voltage source to free layer 102 and pinned layers 104) may generate tunneling current through each of the MTJs 108-A, 108-B, 108-C. As described hereinafter, the tunneling current generated through MTJs 108-A, 108-B, 108-C may depend on the magnetization directions of pinned layers 104 relative to free layer 102.
Illustrated above free layer 102 in
Generally, write structures 110 may be insulated from free layer 102. The separation, illustrated in
A write circuit (not shown in
The direction of current passed through write structures 110 controls the direction of the magnetic field generated by write structures 110, and accordingly, controls the direction of magnetization of free layer 102 adjacent to write structures 110. In general, portions of free layer 102 associated with write structures 110 may be magnetized in one of two directions, referred to as a “first direction” and a “second direction.” The first direction may be opposite to the second direction. A left facing arrow “←” may indicate magnetization in the first direction and a right facing arrow “→” may indicate magnetization in the second direction. Directions of magnetization of free layer 102 are illustrated as double ended arrows “” in
In summary, controlling the direction of current through write structures 110 controls a direction of magnetization of free layer 102 adjacent to write structures 110, and therefore controls the direction of magnetization of an electrode of each of the MTJs 108-A, 108-B, 108-C. In this manner, the resistance of each of MTJs 108-A, 108-B, 108-C may be controlled. For example, controlling a direction of current through write structure 110-2 may control a direction of magnetization of free layer 102 adjacent to write structure 110-2 (i.e., between insulating layer 106-2 and write structure 110-2). Control of the direction of magnetization of free layer 102 adjacent to write structure 110-2 in turn controls the resistance of MTJ 108-A.
Free layer 102 may maintain a previously magnetized state (i.e., direction of magnetization) in the absence of further application of write currents through write structures 110. In other words, the direction of magnetization of free layer 102 is generally changed, from one stable state to another stable state, by application of a write current to write structures 110.
Free layer 102 may include various modifications 112-1, 112-2, 112-3, 112-4 that may be referred to hereinafter as “domain wall pinning sites 112,” or “pinning sites 112.” Pinning sites 112 may be modifications to free layer 102 that stabilize magnetic domain walls in free layer 102 that are positioned near (e.g., beneath) pinning sites 112. For example, pinning sites 112 may stabilize domain walls present in free layer 102 between adjacent MTJs when adjacent MTJs are magnetized in different directions.
Modifications to free layer 102 that stabilize domain walls in free layer 102 may include, but are not limited to, notching of free layer 102, ion implantation in free layer 102, and/or deposition of a stress layer over free layer 102 at pinning sites 112. Although, notching of free layer 102, ion implantation in free layer 102, and deposition over free layer 102 are disclosed as modifications that stabilize domain walls in free layer 102, it is contemplated that other modifications to free layer 102 at the pinning sites 112 may stabilize domain walls in free layer 102.
Pinning sites 112 may represent notches in free layer 102.
In some examples, pinning sites 112 may represent areas of free layer 102 that are modified by ion implantation. Accordingly, each of pinning sites 112 may be an ion implanted region in free layer 102 between each of MTJs 108-A, 108-B, 108-C that share free layer 102. Ion implantation in free layer 102 may be performed, for example, after a photolithographic process has defined pinning sites 112 in free layer 102. Ion implantation may cause local strain in free layer 102 at pinning sites 112. Pinning sites 112 may be formed by ion implantation in lieu of, or in addition to, notching. For example, each of pinning sites 112 may include notches and/or be modified by ion implantation.
In some examples, pinning sites 112 may represent areas of free layer 102 that are modified by a thin-film (i.e., a strain layer) which is deposited over free layer 102.
Pinning sites 112, as illustrated in
Pinning sites 112 and write structures 110 may be arranged such that each of the write structures 110 are configured to magnetize corresponding portions of free layer 102 located between pinning sites 112. In other words, each write structure 110 may be configured to magnetize a portion of free layer 102 between two pinning sites 112. For example, write structures 110 of
Pinning sites 112 may stabilize domain walls created in the region of free layer 102 near the pinning sites 112. In other words, once a domain wall is formed at (e.g. under) pinning sites 112 between MTJs 108-A, 108-B, 108-C, the domain walls may not readily propagate through free layer 102 in response to thermal energy. If pinning sites 112 were not formed in free layer 102, domain walls in free layer 102 may have a greater tendency to move throughout free layer 102 due to thermal energy. In some examples, the width of the domain wall may be on the order of 500 Angstroms and may ultimately depend on the thickness of free layer 102.
In free layer 102 that uses domain walls for storing information, the write current, write power, and write energy used to nucleate domain walls in the writing process can be lower than the currents used for writing to separate, discontinuous, and uncoupled magnetic elements. In addition, the currents, powers, and energies needed to propagate domain walls between stabilization sites for adjacent MTJs of the present disclosure are relatively low. The energy barriers in MTJs of the present disclosure may be designed to stabilize the domain walls, and therefore establish the state of the MTJs, when the propagating current is removed.
Current source 114-1 magnetizes the portion of free layer 102 that forms an electrode of MTJ 108-A. In other words, current source 114-1 magnetizes the portion of free layer 102 between pinning sites 112-1 and 112-2 that border MTJ 108-A. Current source 114-2 magnetizes the portion of free layer 102 that forms an electrode of MTJ 108-B. Current source 114-3 magnetizes the portion of free layer 102 that forms an electrode of MTJ 108-C.
Magnetization directions of free layer 102 corresponding to MTJs 108-A, 108-B, 108-C are illustrated by single ended arrows, either “←” for the first direction or “→” for the second direction. The portion of free layer 102 corresponding to MTJ 108-A is magnetized in the first direction in response to application of write current “+IWrite” in the first direction. Portions of free layer 102 corresponding to MTJs 108-B, 108-C are magnetized in the second direction in response to application of write current “−Iwrite” in the second direction.
A domain wall 116, illustrated as a darkened region in free layer 102, is formed between MTJ 108-A and MTJ 108-B, which are magnetized in different directions. Pinning site 112-2 may stabilize the domain wall that is formed between MTJ 108-A and MTJ 108-B. In general, a domain wall may be stabilized at any of pinning sites 112 when portions of free layer 102 on opposite sides of (i.e., separated by) pinning sites 112 are magnetized in different directions. As illustrated in
Referring now to
VRead 120 is connected to free layer 102 and pinned layers 104-2 and 104-3. In other words, VRead 120 is applied across MTJs 108-A, 108-B. VRead 120 generates current “IRead.” IRead may be equal to the combined current through each of MTJ 108-A and MTJ 108-B. In other words, IRead may be equal to the sum of the current through MTJ 108-A and MTJ 108-B (e.g., through insulating layers 106-2, 106-3). Although VRead 120 is illustrated as connected to two MTJs 108-A, 108-B, in other examples, VRead 120 may be connected to a single MTJ or more MTJs.
Each of MTJs 108-A, 108-B may be in one of a “high resistance state” or a “low resistance state,” depending on a direction of magnetization of the portion of free layer 102 corresponding to the MTJ. An MTJ (e.g., 108-B) is in a high resistance state when the magnetization direction of free layer 102 is anti-parallel to the magnetization direction of pinned layer (e.g., 104-2). An MTJ (e.g., 108-A) is in a low resistance state when the magnetization direction of free layer 102 is parallel to the magnetization direction of the pinned layer (e.g., 104-3). As used herein, a write current in the first direction “+IWrite” magnetizes free layer 102 in the first direction “←” and places an MTJ in the low resistance state. Furthermore, a write current in the second direction “−IWrite” magnetizes free layer 102 in the second direction “→” and places an MTJ in the high resistance state.
An MTJ device may transition from the high resistance state to the low resistance state when the portion of free layer associated with the MTJ transitions between magnetization directions. For example, an MTJ device may transition from the high resistance state to the low resistance state when the relative magnetization directions of the electrodes of the MTJ transition from anti-parallel to parallel. During the transition from the high resistance state to the low resistance state, the resistance of an MTJ may be a resistance that has a value between the resistance values of the MTJ in the high and low resistance states.
Since the resistance of MTJs 108-A, 108-B may depend on a direction of magnetization of free layer 102, the magnitude of current “IRead” through MTJs 108-A and 108-B may depend on a direction of magnetization of free layer 102. For example, current generated through an MTJ in response to VRead 120 may be at a maximum/minimum value when the MTJ is in the low/high resistance state. Current through an MTJ in response to VRead 120 may transition from a low to a high current during a transition of the MTJ from the low resistance state to the high resistance state, and vice versa.
As described hereinafter with reference to
Magnetic logic device 122 may operate in at least 3 states, each state corresponding to the resistance (e.g., as seen by VRead 120) associated with magnetic logic device 122. The 3 states may be referred to as the low resistance state, the intermediate resistance state, and the high resistance state. Magnetic logic device 122 may be in the low resistance state when both MTJ 108-A and MTJ 108-B are in the low resistance state. Magnetic logic device 122 may be in the high resistance state when both MTJ 108-A and MTJ 108-B are in the high resistance state. Magnetic logic device 122 may be in the intermediate resistance state when one of MTJ 108-A and MTJ 108-B is in the low resistance state and the other of MTJ 108-A and MTJ 108-B is in the high resistance state.
A magnitude of IRead through magnetic logic device 122 may indicate the state of magnetic logic device 122. Current IRead through magnetic logic device 122 (i.e., the sum of currents through MTJs 108-A, 108-B) may take on at least three discrete values, corresponding to the states of magnetic logic device 122. For example, current IRead may take on a low current value, an intermediate current value, and a high current value. IRead may be described as a high current when magnetic logic device 122 is in the low resistance state since an amount of current through magnetic logic device 122 is at a maximum value when the resistance of magnetic logic device 122 is at a low value. IRead may be described as a low current when magnetic logic device 122 is in the high resistance state since an amount of current through magnetic logic device 122 is at a minimum value when the resistance of magnetic logic device 122 is at a high value. IRead may be described as an intermediate current when magnetic logic device 122 is in the intermediate resistance state since the amount of current through magnetic logic device 122 is at an intermediate value when the resistance of magnetic logic device 122 is at the intermediate value. Note that an intermediate value of IRead indicates that one of MTJ 108-A and MTJ 108-B are in the high resistance state and the other one of MTJ 108-A and MTJ 108-B are in the low resistance state, but may not indicate which of the MTJs 108-A, 108-B is in which state.
Referring now to
Furthermore, Although the modules are illustrated separately in order to highlight their function, the modules may be integrated into a single module. For example, in
In
In
Current reference module 128 may generate various values of IRef. The value of IRef generated by current reference module 128 may affect the output value of current comparison module 126. In general, IRef may be set to a value that is either greater than the intermediate current value of IRead or less than the intermediate current value of IRead. The selection of IRef relative to the intermediate current value of IRead may affect the output value of current comparison module 126. In a first example, current reference module 128 may generate IRef such that IRef is greater than the intermediate current value of IRead. In this first example, current comparison module 126 may output a value of 0 when IRead is at the high current value, and output a value of 1 when IRead is at the intermediate and low current values. In a second example, current reference module 128 may generate IRef such that IRef is less than the intermediate value of IRead. In this second example, current comparison module 126 may output a value of 0 when IRead is at the high current value and the intermediate current value, and may output a 1 when IRead is at the low current value.
In
In
Referring now to
Magnetic logic system 130 may receive 3 inputs: logic input A, logic input B, and operation select input. Logic input A and logic input B correspond to directions of write currents applied to write structure 110-1 and write structure 110-2, respectively. For example, a logic input 0 applied to either logic input A or B may correspond to a write current in the first direction that magnetizes free layer 102 in the first direction “←.” A logic input 1 applied to either logic input A or B may correspond to a write current in the second direction that magnetizes free layer 102 in the second direction “→.”
Operation select may be an input (e.g., a digital value) that indicates the desired operation which magnetic logic system 130 implements. In the example of
In some examples, magnetic logic system 130 may include a fourth input that controls VRead 120, e.g., that may turn VRead 120 on or off. For example, the fourth input may turn on VRead 120 to read the state of magnetic logic device 122 during a read phase, and may turn VRead 120 off during a write phase in which currents are applied to logic input A and/or logic input B. Accordingly, VRead 120 may be selectively applied at various times to determine the state of magnetic logic device 122.
The column labeled “R, I” relates information regarding the state of magnetic device 122. For example, “Low R, High I” indicates that magnetic logic device 122 is in the low resistance state (i.e., high current state), “Int R, Int I” indicates that magnetic logic device 122 is in the intermediate resistance state (i.e., intermediate current state), “High R, Low I” indicates that magnetic logic device 122 is in the high resistance state (i.e., low current state).
The column labeled “Out” indicates the output of current comparison module 126. As described above, current comparison module 126 outputs a digital value to indicate a relative magnitude of IRead to IRef. In other words, output of current comparison module 126 indicates whether IRead is greater than or less than IRef. As described above, current comparison module 126 outputs a value of “0” to indicate that IRead is greater than IRef and outputs a value of “1” to indicate that IRead is less than IRef.
Operation select may indicate a desire to perform an AND operation using magnetic logic system 130. In response to operation select indicating an AND operation, current reference module 128 may set IRef to a value that is less than the intermediate current through magnetic logic device 122 in order to implement the AND operation.
In summary, magnetic logic systems 130, 132 perform a logic operation on logic inputs A and B to determine a discrete output. In one sense, magnetic logic systems 130, 132 perform a logic operation on logic inputs which may be characterized as currents, or more specifically as current directions. In another sense, magnetic logic systems 130, 132 perform logic operations on the magnetization states of the MTJs, which in turn correspond to the most recent current direction applied to write structures 110. Magnetic logic device 122 may be referred to as a “non-volatile logic device” since the most recent inputs (e.g., the current direction, or magnetization state) are stored in free layer 102 until rewritten, even if power is not applied to a system that includes magnetic logic device 122. For example, upon power-up of the system including magnetic logic device 122, the prior inputs may be determined based on an interrogation (e.g., a measurement or characterization of IRead) of magnetic logic device 122. Magnetic logic device 122 therefore differs from typical volatile logic devices in which the state of the inputs may not be stored when power is lost.
Various examples have been described. These and other examples are within the scope of the following claims.
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