A gas feed insert configured to be disposed in a passage through an electrode assembly comprising a first insert end having therein a first bore aligned parallel with a linear axis of the gas feed insert. The gas feed insert further includes a second insert end opposite the first insert end, the second insert end having therein a second bore aligned parallel with the linear axis of the gas feed insert and a bore-to-bore communication channel in gas flow communication with the first bore and the second bore. The bore-to-bore communication channel is formed in an outer surface of the gas feed insert so as to prevent a line-of-sight when a gas flows from the first insert end through the bore-to-bore communication to the second insert end.
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1. A gas feed insert configured to be disposed in a passage through an electrode assembly, comprising
a first insert end having therein a first bore aligned parallel with a linear axis of said gas feed insert;
a second insert end opposite said first insert end, said second insert end having therein a second bore aligned parallel with said linear axis of said gas feed insert; and
a bore-to-bore communication channel in gas flow communication with said first bore and said second bore, said bore-to-bore communication channel being formed in an outer surface of said gas feed insert so as to prevent a line-of-sight when a gas flows from said first insert end through said bore-to-bore communication to said second insert end, wherein at least a part of the insert is integrally formed, and wherein the first bore, the bore-to-bore communication channel, and at least a part of the second bore are created within said part that is integrally formed.
19. A plasma processing system comprising at least one plasma processing chamber, said plasma processing chamber including:
an electrode; and
a gas feed insert configured to be disposed in a passage through said electrode assembly, comprising
a first insert end having therein a first bore aligned parallel with a linear axis of said gas feed insert,
a second insert end opposite said first insert end, said second insert end having therein a second bore aligned parallel with said linear axis of said gas feed insert, and
a bore-to-bore communication channel in gas flow communication with said first bore and said second bore, said bore-to-bore communication channel being formed in an outer surface of said gas feed insert so as to prevent a line-of-sight when a gas flows from said bore through said bore-to-bore communication to said bore, wherein at least a part of the insert is integrally formed, and wherein the first bore, the bore-to-bore communication channel, and at least a part of the second bore are created within said part that is integrally formed.
11. A method for manufacturing a plasma processing system having at least one plasma processing chamber, said plasma processing chamber including an electrode assembly, said method comprising:
providing a gas feed insert, said gas feed insert having at least
a first insert end having therein a first bore aligned parallel with a linear axis of said gas feed insert,
a second insert end opposite said first insert end, said second insert end having therein a second bore aligned parallel with said linear axis of said gas feed insert, and
a bore-to-bore communication channel in gas flow communication with said first bore and said second bore, said bore-to-bore communication channel being formed in an outer surface of said gas feed insert so as to prevent a line-of-sight when a gas flows from said first insert end through said bore-to-bore communication to said second insert end, wherein at least a part of the insert is integrally formed, and wherein the first bore, the bore-to-bore communication channel, and at least a part of the second bore are created within said part that is integrally formed;
disposing said gas feed insert in a hole in said electrode assembly; and
assembling said electrode in said plasma processing chamber.
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10. The gas feed insert of
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20. The plasma processing system of
21. The plasma processing system of
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This application claims priority under 35 USC. 119(e) to a commonly-owned provisional patent application entitled “Gas Feed Insert In A Plasma Processing Chamber And Methods Therefor”, U.S. Application No. 61/564,514, filed on Nov. 29, 2011 by Anthony de la Llera et al., all of which are incorporated herein by reference.
Plasma has long been employed for processing substrates (e.g., wafers, flat panel displays, liquid crystal displays, etc.) into electronic devices (e.g., integrated circuit dies) for incorporation into a variety of electronic products (e.g., smart phones, computers, etc.).
In plasma processing, a plasma processing system having one or more plasma processing chambers may be employed to process one or more substrates. Plasma generation may employ capacitively coupled plasma, inductively coupled plasma, electron-cyclotron technology, microwave technology, etc.
In an example capacitively coupled plasma processing chamber, the wafer may be disposed on a work piece holder, also known as a chuck. Generally speaking, the chuck functions as a lower electrode, which may be supplied with one or more radio frequency (RF) signals. Another electrode, known as the upper electrode, may be disposed in a spaced-apart relationship above the substrate. The gap between the substrate upper surface and the lower surface of the upper electrode typically forms a plasma generation region. In the typical scenario, the upper substrate is typically grounded, and the RF energy provided to the lower electrode is capacitively coupled to the plasma during substrate processing. That is, when reactant gases are released into the plasma generation region through gas feed tubes built into the upper electrode, the RF energy may couple with the released reactant gas to ignite and sustain a plasma in the plasma generation region for substrate processing.
In some plasma processing systems, the upper electrode may alternatively or additionally be energized with RF energy. The RF signal applied to the upper electrode may have the same or a different. RF frequency relative to the RF frequency of the RF signal supplied to the lower electrode.
One challenge confronting designers of plasma processing systems is the need to confine the plasma to the plasma generation region at all times and especially during plasma processing. In plasma processing chambers where the upper electrode is energized with RF energy, the need to confine plasma is particularly acute.
This is because when the upper electrode is energized with RF energy, an electric field is set up between grounded chamber components and the RF-energized upper electrode. This electric field may cause unwanted ignition of plasma from reactant gases in the gas feed passages which, as previously mentioned, are employed to provide reactant gases to the plasma generation region.
To elaborate on this phenomenon, it should be noted that the chamber walls and many portions of a typical plasma processing chamber are typically grounded for safety reasons, among others. When the upper electrode is provided with RF power, an electric field exists between the RF-powered upper electrode and the grounded chamber components above it. Reactant gases flowing in gas passages or tubes that traverse this electric field may be sufficiently excited to form a plasma inside the gas passages or in interstitial volumes between upper electrode layers and parts. This plasma is unintended and undesirable since its presence introduces unpredictability to the process and thus is often detrimental to the etch result. Furthermore, the unwanted plasma often accelerates upper electrode component erosion, leading to premature upper electrode or plasma processing system failure.
Controlling this undesirable plasma formation is one of any goals of embodiments of the present invention.
The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which:
The present invention will now be described in detail with reference to a few embodiments thereof as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps and/or structures have not been described in detail in order to not unnecessarily obscure the present invention.
Embodiments of the invention relate to an improved gas feed insert configured to be disposed in a passage through an electrode assembly, such as an upper electrode assembly although the invention may also be applied to other electrode assemblies, such as the lower electrode assembly or an auxiliary electrode assembly. The improved gas feed insert has, in one or more embodiments, a first insert end opposite the second insert, end. In each of the insert ends, there is disposed a bore to facilitate gas flow. The bores are disposed parallel to the linear axis of the insert. In an embodiment, one or both of the bores may be axially aligned with the linear axis of the insert.
The bores in the two ends of the insert do not meet one another. Instead, each bore is coupled with a respective cross channel that is also coupled to a bore-to-bore communication channel disposed on the external surface of the insert. In one or more embodiments, the cross channel is orthogonal or at an angle relative to the bore through the end of the insert. In one or more embodiments, the bore-to-bore communication channel is a spiral built into the external surface of the insert. In this manner, an end-to-end gas channel is created through the insert from the first insert end to the second insert end via the two cross channels and the bore-to-bore communication channel.
In one or more embodiments, the bore diameter, the cross-channel diameter and/or the bore-to-bore channel diameter is/are kept small in order to prevent plasma formation in these bores and channels. Further, since the bores, cross-channel, and bore-to-bore channel are not physically aligned, the plasma does not have a line-of-sight to other components of the chamber through the gas feed insert.
In one or more embodiments, the electrode assembly is a multi-layer electrode assembly, and the gas feed insert has at least two different outer diameters or circumferences to better protect the various layers of the multi-layer electrode assembly from line-of-sight plasma exposure.
The features and advantages of embodiments of the invention may be better understood with reference to the figures and discussions that follow.
A bore-to-bore channel 130 is formed on the external surface 132 of gas feed insert 100. In a preferred embodiment, bore-to-bore channel 130 is a spiral formed on external surface 132 although bore-to-bore channel 130 may simply be a straight channel if desired. Cross channels 142 and 144 are employed to couple bores 112 and 114 respectively to bore-to-bore channel 130. When gas feed insert 100 is disposed in a hole through an electrode and fits snugly or even loosely therein, the gas entering bore 112 at first insert end 102 would traverse bore 112, cross channel 142, bore-to-bore 130, cross channel 144, and bore 114 to exit at second insert end 104.
The spiral form has the advantage of increasing the distance traveled by the gas from the ground potential existing at one end of the gas feed insert and the RF potential existing at the other end of the gas feed insert (or vice versa) when RF energy is supplied to the electrode. However, such spiral form is not an absolute requirement since the use of a bore-to-bore channel (such as 130) that is not line-of-sight with bores 102 and 104 already offer advantages with respect to preventing damage from the plasma to components along the gas flow path and components disposed behind the electrode.
In a preferred embodiment, the cross-section of each of bore 112, cross channel 142, bore-to-bore 130, cross channel 144, and bore 114 is sized so that the cross-section dimension is smaller than what is necessary to ignite and/or sustain the plasma in those components. One skilled in the art will readily appreciate that such cross-section dimension calculation is within the skills of one skilled in the art in the plasma field (based on, for example Paschen's Law) and will vary from chamber to chamber depending on for example, the threshold voltage required to ignite a gas discharge at a given pressure and/or other parameters (e.g., type of reactant gases, the RF power supplied, the RF frequency, etc.).
In one or more embodiments, only some but not every one of bore 112, cross channel 142, bore-to-bore 130, cross channel 144, and bore 114 are sized so that the cross-section dimension is smaller than what is necessary to ignite and/or sustain the plasma in those components.
In the embodiment of
In
An electrically insulating layer 212, formed of aluminum nitride or another suitable insulating, material, is shown disposed between grounded heater plate 210 and a gas distribution plate 214 comprising two layers 216 and 218 as shown. Layers 216 and 218 are typically formed of aluminum or another suitable material. Gas distribution plate 214 may include gas manifolds 230 and gas diffusion holes 232 for distributing the gas received via gas feed insert 100 that is disposed in hole 208 to the region below gas distribution plate 214 for plasma generation. Although not shown in the example of
The use of the gas insert substantially simplifies manufacturing, maintenance, and replacement of parts in electrode assembly 200. It would have been very difficult and expensive to mill or machine out the appropriately sized offset gas paths in each of holes 208 of electrode assembly 200. Instead, embodiments of the invention simply require that holes be created through electrode assembly 200 and the inserts perform the job of preventing unwanted plasma formation in the holes and preventing line-of-sight plasma-related damage to components of electrode assembly 200 or to components disposed above electrode assembly 200. The inserts themselves can be individually formed inexpensively and independent of the manufacturing of the larger, more cumbersome and more expensive electrode assembly. If any one of the inserts is found to be defective or malfunctions, that insert can be swapped out instead of having to swap out the entire electrode assembly as would be the case if the offset gas paths are integrated into the electrode assembly itself. If different reactant gases, different RF power regimes, different RF frequencies are employed and the cross-section of the gas passages need to be changed to a smaller cross-section to prevent unwanted plasma formation in the gas passages, the inserts can be simply swapped out.
In the example of
In
For example, concentric O-ring 270 formed of a resilient material may be employed to retain gas feed insert section 260 in place and centered with respect to the hole in which it is fitted. A shoulder 272 may be employed to simplify assembly by automatically aligning gas feed insert section 260 in the Z direction in heater plate 210 when gas feed insert section 260 is inserted into the hole in heater plate 210 from below prior to mating heater plate 210 and insulating, layer 212 together. By using a combination of shoulder 272 and concentric O-ring 270, assembly may be substantially simplified since gas feed insert section 260 is automatically aligned axially with respect to the hole by the concentric O-ring and aligned in the Z direction by the operation of shoulder 272 which rests on a complimentary shelf built into the material of the electrode body.
As can be seen in
In step 304, the gas feed insert is disposed a hole in an electrode of the plasma processing chamber. If the gas feed insert is formed of different sections, different sections of the gas feed insert may be disposed in different layers or sections of the electrode prior to assembling the electrode assembly together as one part. In step 306, the electrode having therein the gas feed insert is disposed in a plasma processing chamber. In step 308, the electrode is energized with RF energy for processing one or more substrates in the chamber while reactant gas is flowed through the gas feed inserts and provided to a plasma generation region of the plasma processing chamber to generate plasma to process a substrate.
As can be appreciated from the foregoing, embodiments of the invention advantageously prevent line-of-sight plasma-related, damage to components of the electrode and/or components near or behind the electrode. Further, embodiments of the invention prevent unwanted plasma formation in the gas feed channels using methods and apparatus that are simple, efficient, and cost-effective to implement, manufacture, maintain, and/or replace.
While this invention has been described in terms of several preferred embodiments, there are alterations, permutations, and equivalents, which fall within the scope of this invention. Although various examples are provided herein, it is intended that these examples be illustrative and not limiting with respect to the invention. Also, the title and summary are provided herein for convenience and should not be used to construe the scope of the claims herein. Further, the abstract is written in a highly abbreviated form and is provided herein for convenience and thus should not be employed to construe or limit the overall invention, which is expressed in the claims. If the term “set” is employed herein, such term is intended to have its commonly understood mathematical meaning to cover zero, one, or more than one member. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present invention. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations, and equivalents as fall within the true spirit and scope of the present invention.
Dhindsa, Rajinder, Kellogg, Michael C., Marakhtanov, Alexei, de la Llera, Anthony
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