fluorinated, diamond-like carbon (F-DLC) films are produced by a pulsed, glow-discharge plasma immersion ion processing procedure. The pulsed, glow-discharge plasma was generated at a pressure of 1 Pa from an acetylene (C2H2) and hexafluoroethane (C2F6) gas mixture, and the fluorinated, diamond-like carbon films were deposited on silicon <100>substrates. The film hardness and wear resistance were found to be strongly dependent on the fluorine content incorporated into the coatings. The hardness of the F-DLC films was found to decrease considerably when the fluorine content in the coatings reached about 20%. The contact angle of water on the F-DLC coatings was found to increase with increasing film fluorine content and to saturate at a level characteristic of polytetrafluoroethylene.
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1. A method for producing a fluorinated, diamond-like carbon coating on a substrate which comprises the steps of:
(a) applying a negative-pulsed bias to said substrate; and (b) immersing the biased substrate in a plasma containing ions simultaneously bearing carbon and hydrogen and carbon and fluorine, whereby the ions are projected onto the surface of said substrate and form a fluorinated, diamond-like coating on the surface thereof, wherein the plasma is formed in a gas mixture of acetylene and hexafluoroethane having a ratio of about 1:1.
2. The method for producing a fluorinated, diamond-like carbon coating on a substrate as described in
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This application claims the benefit of provisional application 60/168,218, filed Nov. 30, 1999.
This invention was made with government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy to The Regents of The University of California. The government has certain rights in the invention.
The present invention relates generally to the deposition of diamond-like coatings on substrates and, more particularly, to the deposition of fluorinated diamond-like coatings on substrates using plasma immersion ion processing.
Diamond-like carbon (DLC) films are known for their high hardness, wear resistance and low friction. Many applications have been developed for these coatings and their modified counterparts. A scratch resistant and extremely hard coating with excellent hydrophobic (un-wetting) properties has numerous practical applications ranging from non-stick kitchenware to protective coatings for optics. Since DLC is itself only mildly hydrophobic, different elements such as F, N, O or Si, have often been incorporated into it by using a variety of techniques (see e.g., M. Grischke et al., Surf. Coat. Technol. 74, 739 (1995)). The fluorination of thin films and surfaces can be achieved using both etching and deposition treatments. However, the fluorine incorporation in surfaces after the widely used C2F4 plasma etching process is only a few nanometers deep (see, e.g., Y. Lin and L. J. Overzet, Appl. Phys. Left. 62, 675 (1993) and C. Vivensang et al., Diamond Relat. Mater. 3, 645 (1994)), thereby limiting the applications of the treated surfaces. The deposition of different types of fluorinated films such as fluoropolymer films by sputtering of polytetrafluoroethylene (PTFE) onto targets or by using plasma-assisted deposition has been well established (see, e.g., D. Fleisch et al., J. Membrane Sci. 73, 163 (1992) and F. Quaranta et al., Appl. Phys. Lett. 63, 10 (1993)). For the plasma deposition of F-DLC films fluorocarbon-hydrocarbon mixtures have been mostly used (see, e.g., D. Fleisch et al., J. Membrane Sci. 73, 163 (1992), R. S. Butter et al., Thin Solid Films, 107 (1997), and J. Seth and S. V. Babu, Thin Solid Films 230, 90 (1993)). The results from various studies by different groups have shown that the un-wetting properties of F-DLC films can reach the performance of PTFE and the hardness and wear resistance have been kept relatively high (see, e.g., M. Grischke et al., Diam. Relet. Mater. 7, 454 (1998) and C. Donnet et al., Surf. Coat. Technol. 94-95, 531 (1997)). Earlier studies have also shown that the contact angle behavior of the F-DLC films produced with plasma techniques from fluorocarbon-hydrocarbon gas mixtures depends on the incorporation of CF2 and CF3 groups rather than CF group (see, e.g., D. Fleisch et al., supra, H. Kasai et al., J. Phys. D19, L225 (1986), and J. Seth and S. V. Babu, supra). This incorporation then depends on the composition of source gases, deposition technique and parameters and plasma chemistry that take place during the deposition.
In order to attain widespread utilization, a method for deposition of thin films must be readily scalable to a production scale. This also applies to F-DLC films. To date, all plasma deposition techniques that have been used to produce hard F-DLC with good un-wetting properties have been line-of-sight processes. Thus, complex-shaped objects are difficult to uniformly coat. Plasma Immersion Ion Processing (PIIP) for the deposition of F-DLC coatings differs from the Plasma Source Ion Implantation (PSII) process by employing a low pulsed-bias voltage, typically less than 10 kV, and enables the deposition of thin films on various substrate materials (see, e.g., K. C. Walter et al., Surf. Coat Technol. 93, 287 (1997) and S. M. Malik et al., J. Vac. Sci. Technol. A15, 2875 (1997)). Additionally, PIIP enables conformal deposition over large areas (see, e.g., J. R. Conrad et al., J. Appl. Phys. 62, 4591 (1987)).
Accordingly, it is an object of the present invention to provide a method for depositing fluorinated, diamond-like coatings on chosen substrates using a non-line-of-sight process.
Another object of the present invention is to provide a method for depositing fluorinated, diamond-like coatings on chosen substrates using plasma immersion ion processing.
Additional objects, advantages and novel features of the invention will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following or may be learned by practice of the invention. The objects and advantages of the invention may be realized and attained by means of the instrumentalities and combinations particularly pointed out in the appended claims.
To achieve the foregoing and other objects, and in accordance with the purposes of the present invention, as embodied and broadly described herein, the method for depositing a fluorinated, diamond-like carbon coating on a selected substrates includes the steps of: applying a negative-pulsed bias to the substrate, and immersing the biased substrate in a plasma containing ions simultaneously bearing carbon and hydrogen and carbon and fluorine, whereby the ions are projected onto the surface of said substrate and form a fluorinated, diamond-like coating on the surface thereof.
Preferably, the plasma is formed in a gas mixture including acetylene and hexafluoroethane.
It is also preferred that the substrate includes silicon.
Benefits and advantages of the present invention include conformal deposition of fluorinated, diamond-like carbon coatings over large areas.
The accompanying drawings, which are incorporated in and form a part of the specification, illustrate the embodiments of the present invention and, together with the description, serve to explain the principles of the invention. In the drawings:
Briefly, the present invention includes a method for depositing durable fluorinated, diamond-like (F-DLC) coatings on chosen substrates using plasma immersion ion processing (PIIP). Gas mixture of hexafluoroethane (C2F6) and acetylene (C2H2) were used for generation of the pulsed, glow-discharge plasma. The composition, hardness, modulus and un-wetting properties of the F-DLC coatings were measured as a function of gas composition. A gas ratio of acetylene to hexafluoroethane of unity (C2H2:C2F6=1) was found to yield an optimized combination of good un-wetting properties and high coating hardness. At higher C2F6 concentrations, the hardness, modulus and wear resistance of the F-DLC coatings became less desirable, while the un-wetting properties of the films did not improve. This deterioration of diamond-like properties for F-DLC films deposited using higher C2F6 concentrations in the gas mixture can be attributed to the increased etching behavior of the fluorocarbon plasma. The deposition rate for F-DLC coatings was found reach a minimum value when a gas ratio of C2H2: C2F6=½ was employed, and with a gas ratio C2H2: C2F6=⅓, significant etching of the substrate was observed.
Having generally described the present invention, the following EXAMPLE provides greater detail as to the operation thereof.
To illustrate the method of the present invention, Si <100> was used as the substrate. Before deposition of the F-DLC, substrates were ultrasonically cleaned first in acetone, then in methanol, and subsequently sputter cleaned using an argon plasma. The initial pressure in the vacuum chamber was about 10-4 Pa. The argon plasma was generated using two inductively coupled 0.46 MHz RF power sources at about 0.04 Pa pressure (see, e.g., "Inductive Plasma Sources for Plasma Implantation and Deposition" by M. Tuszewski, et al., IEEE Transactions of Plasma Science 26, 1653 (1998), and "Diamond-Like Carbon Deposition on Silicon Using Radio-frequency Inductive Plasma of Ar and C2H2 Gas Mixture in Plasma Immersion Ion Deposition" by D. H. Lee et al., Appl. Phys. Lett. 73, 2423 (1998)). In order to generate a uniform ion distribution, both sources were positioned mirror-symmetrically with respect to the sample stage. The pulsed bias voltage during the sputter cleaning process was 1 kV, and the pulse frequency and pulse length were 10 kHz and 20 μs, respectively. The total sputtering time was 10 minutes for all substrates.
Pulsed glow discharge plasmas were used for the F-DLC depositions. Acetylene (C2H2) and hexafluoroethane (C2F6) gases were introduced into the chamber at various gas ratios, and a pulsed bias voltage of 4 kV was applied to the substrate. The pressure was maintained at approximately 1 Pa by adjusting the mass flow of the plasma gases. The pulse frequency was 4 kHz and the pulse length was 30 μs. The deposition rate was found to vary for different gas ratios. The following gas ratios were used for the deposition of the F-DLC coatings: C2H2:C2F6 (10:1), C2H2:C 2F6 (5:1), C2H2:C2F6 (2:1), C2H2:C2F6 (1:1), C2H2:C 2F6 (1:2) and C2H2:C2F6 (1:3). A Residual Gas Analyzer (RGA) was used to analyze the plasma composition.
The thickness of the coatings were measured using a profilometer and were found to vary between about 150 nm and 1.3 μm, while the roughness value of all coatings was about 10 nm. Hardness measurements were performed using a nanoindentor having a continuous stiffness mode. Hardness data were averaged for 10 indents and data from depths of about 10% of the total film thickness was selected. The compositions of the F-DLC films were measured using Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection (ERD) spectrometry with a 75°C beam-incidence angle to the surface normal (see, e.g., Handbook of Modern Ion Beam Materials Analysis, edited by J. R. Tesmer and M. Nastasi, (MRS, Pittsburg, 1995), p. 37-139). Friction and wear measurements were performed using a conventional pin-on-disk measurement system having an optical wear rate measurement capability. Contact angle measurements were performed by applying droplets of distilled water on the coating surface using a pipette and recording the contact angle using a digital camera. Three droplet sizes were used and six different contact angle measurements were averaged. As a comparison, contact angles against water for other materials were measured. For PTFE (Teflon®) the contact angle was 88°C, 46°C for DLC (produced using the PIIP technique on neat C2H2 gas), and 24°C for uncoated Si (<100>polished wafer). Before measurements were performed the samples were cleaned in an ultrasonic bath first with acetone and then with methanol.
Turning now to the drawings,
TABLE | ||||||
Friction coefficient | ||||||
Fluorine | Hydrogen | Contact angle | (66.2 g, ruby-pin, | |||
C2H2:C2F6 | content | content | (against water) | Hardness | Modulus | 10% humidity) |
10:1 | 1.9% | 25.2% | 57°C | 18 GPa | 140 Gpa | 0.13 |
5:1 | 3.7% | 20.2% | 62°C | 18 GPa | 150 Gpa | 0.12 |
2:1 | 10.0% | 7.8% | 68°C | 15 GPa | 130 Gpa | 0.15 |
1:1 | 19.7% | 3.1% | 87°C | 8 GPa | 80 Gpa | 0.09 |
1:2 | 23.3% | 3.0% | 85°C | 3 GPa | 30 Gpa | -- |
DLC | 0.00% | 30.5% | 46°C | 18 GPa | 140 Gpa | 0.12 |
Teflon ® | 67.0% | 0.0% | 88°C | 0.8 | 1.9 | -- |
Since the coating produced using the gas ratio C2H2:C2F6=½ was too soft for pin-on-disk measurements, friction data is not presented. A gas ratio of ⅓ did not produce a coating.
The calculated optical band gap, as a function of incorporated fluorine content in the films, is shown in
The foregoing description of the invention has been presented for purposes of illustration and description and is not intended to be exhaustive or to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical application to thereby enable others skilled in the art to best utilize the invention in various embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims appended hereto.
He, Xiao-Ming, Lee, Deok-hyung, Nastasi, Michael A., Hakovirta, Marko J.
Patent | Priority | Assignee | Title |
10026621, | Nov 14 2016 | Applied Materials, Inc | SiN spacer profile patterning |
10032606, | Aug 02 2012 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
10043674, | Aug 04 2017 | Applied Materials, Inc | Germanium etching systems and methods |
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10062587, | Jul 18 2012 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
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10170336, | Aug 04 2017 | Applied Materials, Inc | Methods for anisotropic control of selective silicon removal |
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10319600, | Mar 12 2018 | Applied Materials, Inc | Thermal silicon etch |
10319603, | Oct 07 2016 | Applied Materials, Inc. | Selective SiN lateral recess |
10319649, | Apr 11 2017 | Applied Materials, Inc | Optical emission spectroscopy (OES) for remote plasma monitoring |
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10325923, | Feb 08 2017 | Applied Materials, Inc | Accommodating imperfectly aligned memory holes |
10354843, | Sep 21 2012 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
10354889, | Jul 17 2017 | Applied Materials, Inc | Non-halogen etching of silicon-containing materials |
10403507, | Feb 03 2017 | Applied Materials, Inc | Shaped etch profile with oxidation |
10424463, | Aug 07 2015 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
10424464, | Aug 07 2015 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
10424485, | Mar 01 2013 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
10431429, | Feb 03 2017 | Applied Materials, Inc | Systems and methods for radial and azimuthal control of plasma uniformity |
10465294, | May 28 2014 | Applied Materials, Inc. | Oxide and metal removal |
10468267, | May 31 2017 | Applied Materials, Inc | Water-free etching methods |
10468276, | Aug 06 2015 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
10468285, | Feb 03 2015 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
10490406, | Apr 10 2018 | Applied Materials, Inc | Systems and methods for material breakthrough |
10490418, | Oct 14 2014 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
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10522371, | May 19 2016 | Applied Materials, Inc | Systems and methods for improved semiconductor etching and component protection |
10529737, | Feb 08 2017 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
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10541184, | Jul 11 2017 | Applied Materials, Inc | Optical emission spectroscopic techniques for monitoring etching |
10541246, | Jun 26 2017 | Applied Materials, Inc | 3D flash memory cells which discourage cross-cell electrical tunneling |
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10573527, | Apr 06 2018 | Applied Materials, Inc | Gas-phase selective etching systems and methods |
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10593553, | Aug 04 2017 | Applied Materials, Inc. | Germanium etching systems and methods |
10593560, | Mar 01 2018 | Applied Materials, Inc | Magnetic induction plasma source for semiconductor processes and equipment |
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10615047, | Feb 28 2018 | Applied Materials, Inc | Systems and methods to form airgaps |
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10707061, | Oct 14 2014 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
10727080, | Jul 07 2017 | Applied Materials, Inc | Tantalum-containing material removal |
10755941, | Jul 06 2018 | Applied Materials, Inc | Self-limiting selective etching systems and methods |
10770346, | Nov 11 2016 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
10796922, | Oct 14 2014 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
10854426, | Jan 08 2018 | Applied Materials, Inc | Metal recess for semiconductor structures |
10861676, | Jan 08 2018 | Applied Materials, Inc | Metal recess for semiconductor structures |
10872778, | Jul 06 2018 | Applied Materials, Inc | Systems and methods utilizing solid-phase etchants |
10886137, | Apr 30 2018 | Applied Materials, Inc | Selective nitride removal |
10892198, | Sep 14 2018 | Applied Materials, Inc | Systems and methods for improved performance in semiconductor processing |
10903052, | Feb 03 2017 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
10903054, | Dec 19 2017 | Applied Materials, Inc | Multi-zone gas distribution systems and methods |
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10943834, | Mar 13 2017 | Applied Materials, Inc | Replacement contact process |
10964512, | Feb 15 2018 | Applied Materials, Inc | Semiconductor processing chamber multistage mixing apparatus and methods |
11004689, | Mar 12 2018 | Applied Materials, Inc. | Thermal silicon etch |
11024486, | Feb 08 2013 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
11049698, | Oct 04 2016 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
11049755, | Sep 14 2018 | Applied Materials, Inc | Semiconductor substrate supports with embedded RF shield |
11062887, | Sep 17 2018 | Applied Materials, Inc | High temperature RF heater pedestals |
11101136, | Aug 07 2017 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
11121002, | Oct 24 2018 | Applied Materials, Inc | Systems and methods for etching metals and metal derivatives |
11158527, | Aug 06 2015 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
11239061, | Nov 26 2014 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
11257693, | Jan 09 2015 | Applied Materials, Inc | Methods and systems to improve pedestal temperature control |
11264213, | Sep 21 2012 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
11276559, | May 17 2017 | Applied Materials, Inc | Semiconductor processing chamber for multiple precursor flow |
11276590, | May 17 2017 | Applied Materials, Inc | Multi-zone semiconductor substrate supports |
11328909, | Dec 22 2017 | Applied Materials, Inc | Chamber conditioning and removal processes |
11361939, | May 17 2017 | Applied Materials, Inc | Semiconductor processing chamber for multiple precursor flow |
11417534, | Sep 21 2018 | Applied Materials, Inc | Selective material removal |
11437242, | Nov 27 2018 | Applied Materials, Inc | Selective removal of silicon-containing materials |
11476093, | Aug 27 2015 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
11594428, | Feb 03 2015 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
11637002, | Nov 26 2014 | Applied Materials, Inc | Methods and systems to enhance process uniformity |
11682560, | Oct 11 2018 | Applied Materials, Inc | Systems and methods for hafnium-containing film removal |
11721527, | Jan 07 2019 | Applied Materials, Inc | Processing chamber mixing systems |
11735441, | May 19 2016 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
11915950, | May 17 2017 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
12057329, | Jun 29 2016 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
12148597, | Dec 19 2017 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
6836312, | Sep 18 2001 | International Business Machines Corporation | Optically transparent film, method of manufacturing optically transparent film, alignment film, and liquid crystal panel and display including alignment film |
7134381, | Aug 21 2003 | NISSAN MOTOR CO , LTD | Refrigerant compressor and friction control process therefor |
7146956, | Aug 08 2003 | NISSAN MOTOR CO , LTD | Valve train for internal combustion engine |
7228786, | Jun 06 2003 | Nissan Motor Co., Ltd. | Engine piston-pin sliding structure |
7255083, | Oct 10 2003 | Nissan Motor Co., Ltd. | Sliding structure for automotive engine |
7273655, | Apr 09 1999 | Shojiro, Miyake; Nissan Motor Co., Ltd. | Slidably movable member and method of producing same |
7284525, | Aug 13 2003 | NISSAN MOTOR CO , LTD | Structure for connecting piston to crankshaft |
7318514, | Aug 22 2003 | NISSAN MOTOR CO , LTD | Low-friction sliding member in transmission, and transmission oil therefor |
7322749, | Nov 06 2002 | Nissan Motor Co., Ltd.; Nippon Oil Corporation | Low-friction sliding mechanism |
7406940, | May 23 2003 | NISSAN MOTOR CO , LTD | Piston for internal combustion engine |
7427162, | May 27 2003 | Nissan Motor Co., Ltd. | Rolling element |
7458585, | Aug 08 2003 | NISSAN MOTOR CO , LTD | Sliding member and production process thereof |
7500472, | Apr 15 2003 | NISSAN MOTOR CO , LTD | Fuel injection valve |
7547847, | Sep 19 2006 | SIEMENS ENERGY, INC | High thermal conductivity dielectric tape |
7553438, | Jun 15 2004 | SIEMENS ENERGY, INC | Compression of resin impregnated insulating tapes |
7572200, | Aug 13 2003 | Nissan Motor Co., Ltd. | Chain drive system |
7592045, | Jun 15 2004 | SIEMENS ENERGY, INC | Seeding of HTC fillers to form dendritic structures |
7650976, | Aug 22 2003 | Nissan Motor Co., Ltd. | Low-friction sliding member in transmission, and transmission oil therefor |
7651963, | Apr 15 2005 | SIEMENS ENERGY, INC | Patterning on surface with high thermal conductivity materials |
7655295, | Jun 14 2005 | SIEMENS ENERGY, INC | Mix of grafted and non-grafted particles in a resin |
7771821, | Aug 21 2003 | NISSAN MOTOR CO , LTD ; NISSAN ARC, LTD ; MARTIN, JEAN MICHEL | Low-friction sliding member and low-friction sliding mechanism using same |
7776392, | Apr 15 2005 | SIEMENS ENERGY, INC | Composite insulation tape with loaded HTC materials |
7781057, | Jun 14 2005 | SIEMENS ENERGY, INC | Seeding resins for enhancing the crystallinity of polymeric substructures |
7781063, | Jul 11 2003 | SIEMENS ENERGY, INC | High thermal conductivity materials with grafted surface functional groups |
7837817, | Jun 15 2004 | Siemens Energy, Inc. | Fabrics with high thermal conductivity coatings |
7846853, | Apr 15 2005 | SIEMENS ENERGY, INC | Multi-layered platelet structure |
7851059, | Jun 14 2005 | SIEMENS ENERGY, INC | Nano and meso shell-core control of physical properties and performance of electrically insulating composites |
7955661, | Jun 14 2005 | SIEMENS ENERGY, INC | Treatment of micropores in mica materials |
8039530, | Jul 11 2003 | Siemens Energy, Inc. | High thermal conductivity materials with grafted surface functional groups |
8096205, | Jul 31 2003 | Nissan Motor Co., Ltd. | Gear |
8152377, | Nov 06 2002 | Nissan Motor Co., Ltd.; Nippon Oil Corporation | Low-friction sliding mechanism |
8206035, | Aug 06 2003 | NISSAN MOTOR CO , LTD ; Nippon Oil Corporation; MARTIN, JEAN MICHEL | Low-friction sliding mechanism, low-friction agent composition and method of friction reduction |
8216672, | Jun 15 2004 | SIEMENS ENERGY, INC | Structured resin systems with high thermal conductivity fillers |
8277613, | Apr 15 2005 | Siemens Energy, Inc. | Patterning on surface with high thermal conductivity materials |
8313832, | Jun 15 2004 | Siemens Energy, Inc. | Insulation paper with high thermal conductivity materials |
8357433, | Jun 14 2005 | SIEMENS ENERGY, INC | Polymer brushes |
8383007, | Jun 14 2005 | Siemens Energy, Inc. | Seeding resins for enhancing the crystallinity of polymeric substructures |
8512864, | Aug 06 2008 | MITSUBISHI HEAVY INDUSTRIES, LTD | Component for rotary machine |
8575076, | Aug 08 2003 | Nissan Motor Co., Ltd. | Sliding member and production process thereof |
8685534, | Jun 15 2004 | Siemens Energy, Inc. | High thermal conductivity materials aligned within resins |
9514932, | Aug 08 2012 | Applied Materials, Inc | Flowable carbon for semiconductor processing |
9741593, | Aug 06 2015 | Applied Materials, Inc | Thermal management systems and methods for wafer processing systems |
9754800, | May 27 2010 | Applied Materials, Inc. | Selective etch for silicon films |
9768034, | Nov 11 2016 | Applied Materials, Inc | Removal methods for high aspect ratio structures |
9773648, | Aug 30 2013 | Applied Materials, Inc | Dual discharge modes operation for remote plasma |
9773695, | Jul 31 2014 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
9837249, | Mar 20 2014 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
9837284, | Sep 25 2014 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
9842744, | Mar 14 2011 | Applied Materials, Inc. | Methods for etch of SiN films |
9865484, | Jun 29 2016 | Applied Materials, Inc | Selective etch using material modification and RF pulsing |
9881805, | Mar 02 2015 | Applied Materials, Inc | Silicon selective removal |
9885117, | Mar 31 2014 | Applied Materials, Inc | Conditioned semiconductor system parts |
9903020, | Mar 31 2014 | Applied Materials, Inc | Generation of compact alumina passivation layers on aluminum plasma equipment components |
9934942, | Oct 04 2016 | Applied Materials, Inc | Chamber with flow-through source |
9947549, | Oct 10 2016 | Applied Materials, Inc | Cobalt-containing material removal |
9966240, | Oct 14 2014 | Applied Materials, Inc | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
9978564, | Sep 21 2012 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
ER3578, |
Patent | Priority | Assignee | Title |
4693927, | Mar 19 1984 | Fuji Photo Film Company Limited | Magnetic recording medium and process for producing the same |
4971667, | Feb 05 1988 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and apparatus |
6002418, | Apr 16 1997 | FUJIFILM Corporation | Thermal head |
Executed on | Assignor | Assignee | Conveyance | Frame | Reel | Doc |
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