Gas introduction plate for plasma etching apparatus for etching semiconductor wafer

Abstract

Description

FIG. 1 is a top plan view of a gas introduction plate for plasma etching apparatus for etching semiconductor wafer, showing our new design;

FIG. 2 is a bottom plan view thereof;

FIG. 3 is an enlarged portion view labeled, “FIG. 3” in FIG. 2;

FIG. 4 is a cross-sectional view taken along line 4-4 in FIG. 3; and,

FIG. 5 is an enlarged portion view labeled, “FIG. 5” in FIG. 4.

The broken lines shown in the drawings represent portions of the gas introduction plate for plasma etching apparatus for etching semiconductor wafer that form no part of the claimed design. The dot-dash broken lines of FIGS. 2-5 define the bounds of the enlarged portion views of FIGS. 3 and 5 and form no part of the claimed design. All sides not shown form no part of the claimed design.

Claims

The ornamental design for a gas introduction plate for plasma etching apparatus for etching semiconductor wafer, as shown and described.