Methods for controlling microloading variation in semiconductor wafer layout and fabrication

Abstract

Problematic open areas are identified in a semiconductor wafer layout. The problematic open areas have a size variation relative to one or more neighboring open areas of the layout sufficient to cause adverse microloading variation. In one embodiment, the adverse microloading variation is controlled by shifting a number of layout features to interdict the problematic open areas. In another embodiment, the adverse microloading variation is controlled by defining and placing a number of dummy layout features to shield actual layout features that neighbor the problematic open areas. In another embodiment, the adverse microloading variation is controlled by utilizing sacrificial layout features which are actually fabricated on the wafer temporarily to eliminate microloading variation, and which are subsequently removed from the wafer to leave behind the desired permanent structures.

Description

CLAIM OF PRIORITY

This application claims priority under 35 U.S.C. 119(e) to U.S. Provisional Patent Application No. 61/085,800, filed Aug. 1, 2008, entitled “Methods for Controlling Microloading Variation in Semiconductor Wafer Layout and Fabrication,” the disclosure of which is incorporated herein by reference in its entirety.

BACKGROUND

In the fabrication of semiconductor devices such as integrated circuits, memory cells, and the like, a series of manufacturing operations are performed to define features within a chip on a semiconductor wafer (“wafer” hereafter). The chip on the wafer includes integrated circuit devices in the form of multi-level structures defined on a silicon substrate. At a substrate level of the chip, transistor devices with diffusion regions are formed. In subsequent levels of the chip, interconnect metallization lines are patterned and electrically connected to the transistor devices to define a desired integrated circuit device. Also, patterned conductive layers are insulated from other conductive layers by dielectric materials.

The series of manufacturing operations for defining features within the chip on the wafer can include an etching process in which particular portions of a material layer are etched away from the surface of the wafer, such that remaining portions of the material layer form structures to be used in the integrated circuit device. In the etching process, variations in the size and location of areas to be etched away from the surface of the wafer can cause differences in the rate at which material is etched away from one area relative to another area. The variations in the size and location of areas to be etched away from the surface of the wafer is referred to as microloading variation. Therefore, microloading variation across the wafer can cause differences in etch rate across the wafer.

The etching process should continue until each area is etched to completion. Therefore, if a given area is etched to completion faster than other areas, due to differences in etch rate across the wafer caused by microloading variation, the given area will be subjected to a localized overetch period. During the localized overetch period, etching by-products from the etching environment may settle within the given area causing a variation in dimension of the given area, which may correspond to an adverse change in critical dimension of a structure to be defined on the wafer in relation to the given area. Therefore, microloading variation in a given layout to be utilized in an etching process on a wafer may adversely effect dimensional characteristics of correspondingly fabricated structures on the wafer.

SUMMARY

In one embodiment, a method is disclosed for controlling microloading variation in a semiconductor wafer layout. The method includes an operation for defining a first layout that includes both permanent layout features and a number of sacrificial layout features. The method also includes an operation for fabricating structures corresponding to both the permanent layout features and the number of sacrificial layout features of the first layout in a target material layer on a wafer. The method further includes an operation for defining a second layout to remove structures corresponding to the sacrificial layout features. The method also includes an operation for utilizing the second layout to remove the structures corresponding to the sacrificial layout features from the target material layer on the wafer.

In another embodiment, a method is disclosed for controlling microloading variation in a semiconductor wafer layout. The method includes an operation for identifying a first open area in a layout having a size variation relative to one or more neighboring open areas of the layout sufficient to cause adverse microloading variation. The method also includes an operation for repositioning a number of layout features within the layout so as to interdict the first open area such that the size variation of the first open area relative to the one or more neighboring open areas is reduced.

In another embodiment, a method is disclosed for controlling microloading variation in a semiconductor wafer layout. The method includes an operation for identifying a first open area in a layout having a size variation relative to one or more neighboring open areas of the layout sufficient to cause adverse microloading variation. The method also includes an operation for defining and placing dummy layout features within the first open area so as to shield actual layout features in the layout neighboring the first open area from adverse microloading variation.

Other aspects and advantages of the invention will become more apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows an exemplary wafer having been prepared for a subtractive etch process;

FIG. 1B shows the exemplary wafer of FIG. 1A following patterning and development of the photoresist layer;

FIG. 1C shows the exemplary wafer of FIG. 1B following an etching process to remove portions of the hard mask layer that are exposed;

FIG. 1D shows the exemplary wafer of FIG. 1C following a stripping of the remaining photoresist;

FIG. 1E shows microloading defined by the wafer surface areas to be etched;

FIG. 1F shows the exemplary wafer of FIG. 1E following a continuation of the etching process;

FIG. 2A is an illustration showing a flowchart of a method for controlling microloading variation in a layout, in accordance with one embodiment of the present invention;

FIG. 2B shows a layout that includes a number of linear shaped features placed in pairs in an array-like manner, in accordance with one embodiment of the present invention;

FIG. 2C shows the layout of FIG. 2B with the linear shaped features in particular rows shifted to interdict the problematic open area, in accordance with one embodiment of the present invention;

FIG. 3A is an illustration showing a flowchart of a method for utilizing dummy layout features to control microloading variation in a layout, in accordance with another embodiment of the present invention;

FIG. 3B shows a gate level layout that includes a pair of linear gate electrode features placed within an isolation guard ring, in accordance with one embodiment of the present invention;

FIG. 3C shows the gate level layout of FIG. 3B with a number of dummy layout features defined and placed within the identified problematic open area of the layout, so as to shield actual layout features which neighbor the problematic open area of the layout from the effects of adverse microloading variation, in accordance with one embodiment of the present invention;

FIG. 4A shows a flowchart of a method for utilizing sacrificial layout features to control microloading variation in a layout, in accordance with another embodiment of the present invention;

FIG. 4B is an illustration showing a flowchart of a method for fabricating structures corresponding to the first layout in the target material layer on the wafer, in accordance with operation 403, in accordance with one embodiment of the present invention;

FIG. 4C is an illustration showing a flowchart of a method for utilizing the second layout, in accordance with operation 407, in accordance with one embodiment of the present invention;

FIG. 5A shows an exemplary final layout to be defined within a target material layer, in accordance with one embodiment of the present invention;

FIG. 5B shows an exemplary first layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 5A, in accordance with one embodiment of the present invention;

FIG. 5C shows an exemplary second layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 5A, in accordance with one embodiment of the present invention;

FIG. 6A shows the cross-sectional view A-A following operation 425, in accordance with one embodiment of the present invention;

FIG. 6B shows the cross-sectional view A-A following operation 427, in accordance with one embodiment of the present invention;

FIG. 6C shows the cross-sectional view A-A following operation 429, in accordance with one embodiment of the present invention;

FIG. 6D shows the cross-sectional view A-A following operation 431, in accordance with one embodiment of the present invention;

FIG. 6E shows the cross-sectional view A-A following operation 433, in accordance with one embodiment of the present invention;

FIG. 6F shows the cross-sectional view A-A following operation 441, in accordance with one embodiment of the present invention;

FIG. 6G shows the cross-sectional view A-A following operation 443, in accordance with one embodiment of the present invention;

FIG. 6H shows the cross-sectional view A-A following operation 445, in accordance with one embodiment of the present invention;

FIG. 6I shows the cross-sectional view A-A following operation 447, in accordance with one embodiment of the present invention;

FIG. 7A shows an exemplary final layout to be defined within a target material layer, in accordance with one embodiment of the present invention;

FIG. 7B shows an exemplary first layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 7A, in accordance with one embodiment of the present invention;

FIG. 7C shows an exemplary second layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 7A, in accordance with one embodiment of the present invention;

FIG. 8A shows an exemplary final layout to be defined within a target material layer, in accordance with one embodiment of the present invention;

FIG. 8B shows an exemplary first layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 8A, in accordance with one embodiment of the present invention; and

FIG. 8C shows an exemplary second layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 8A, in accordance with one embodiment of the present invention.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.

A semiconductor fabrication process may include a subtractive etch process in which portions of a given material layer are etched away from the semiconductor wafer (“wafer” hereafter) to leave selected features defined by the given material layer on the wafer. A layout associated with the selected features to be formed through the subtractive etch process may influence the performance of the subtractive etch process. For example, a layout defined to form polygon shapes through a subtractive etch process may cause an etch rate to vary sufficiently over an area of the wafer such that suboptimal polygon shapes are formed. It should be understood that the etch rate as referenced herein refers to a rate at which material is removed from the exposed surface of the wafer.

A variation in shape density or pattern within a mask to be used in a subtractive etch process may cause the etch rate to vary across the mask. More specifically, shape density or pattern variation across the mask corresponds to a spatial variation in the size of wafer surface areas to be etched, which in turn may cause some wafer surface areas to etch at a different rate than other wafer surface areas. Therefore, some wafer surface areas may be etched through before others. Because the etching process needs to continue until the wafer surface area of slowest etch rate is etched to completion, the wafer surface areas of faster etch rate will be exposed to the etching process and associated environment for a longer duration than necessary. If a given wafer surface area is etched through but continues to be exposed to the etching process and associated environment, etching byproducts from the processing environment may deposit within the etched cavity of the given wafer surface area, thereby forming undesirable sidewall deposition within the etched cavity of the given wafer surface area.

Sidewall deposition can cause a variation in critical dimension of features to be defined on the wafer through the subtractive etch process. Such variation in feature critical dimension may cause adverse electrical performance of fabricated devices or even device failure. Therefore, it is of interest to maintain the etch rate as uniform as possible across portions of the wafer where functional features are to be defined.

In view of the foregoing, it should be understood that spatial variation in the size and relative location of wafer surface areas to be etched may cause a corresponding variation in etch rate. The spatial variation in the sizes and relative locations of wafer surface areas to be etched is referred to herein as microloading. Therefore, variation in microloading across the wafer surface may cause corresponding variation in etch rate across the wafer surface, which may in turn cause undesirable artifacts to be formed across the wafer surface, such as sidewall deposition.

FIGS. 1A-1F illustrate the above-described situation in which variation in microloading across the wafer surface causes variation in etch rate and corresponding undesirable artifacts. FIG. 1A shows an exemplary wafer having been prepared for a subtractive etch process. The wafer includes a substrate 101, a gate electrode material layer 103 disposed over the substrate 101, a hard mask layer 105 disposed over the gate electrode material layer 103, and a photoresist layer 107 disposed over the hard mask layer 105. FIG. 1B shows the exemplary wafer of FIG. 1A following patterning and development of the photoresist layer 107. In one embodiment, the photoresist layer 107 is lithographically patterned using a mask defined for a given feature layout to be formed on the wafer. Development of the photoresist layer 107 leaves a pattern of photoresist on the hard mask layer 105 corresponding to the mask pattern.

FIG. 1C shows the exemplary wafer of FIG. 1B following an etching process to remove portions of the hard mask layer 105 that are exposed, i.e., that are not protected by the remaining pattern of photoresist 107. Therefore, the remaining hard mask 105 generally corresponds to the mask pattern formed within the photoresist layer 107. FIG. 1D shows the exemplary wafer of FIG. 1C following a stripping of the remaining photoresist 107. The remaining hard mask 105 serves to protect underlying wafer areas from another etching process defined to remove the exposed gate electrode material 103. Therefore, the pattern defined by the remaining hard mask 105 features will be also be formed within the gate electrode material layer 103.

In the exemplary embodiment, effects of variation in microloading become apparent in the etching of the gate electrode material 103. As shown in FIG. 1E, the microloading is defined by the wafer surface areas to be etched, which respectively correspond to areas of widths w1, w2, and w3. The exposed (i.e., etchable) wafer surface areas of larger size (i.e., width w3 relative to widths w2 and w1, and width w2 relative to width w1) will generally experience a faster etch rate than the areas of smaller size. Therefore, when the gate electrode material 103 within the area of width w3 is completely etched through a full depth d3, the gate electrode material 103 within the areas of widths w1 and w2 are only etched to depths of d1 and d2, respectively, which is not sufficient to terminate the etching process, as each of the surfaces areas of widths w1, w2, and w3 need to be etched through to the full depth d3. Therefore, the etching process continues until the wafer surface area of smallest size/slowest etch rate (e.g., the area of width w1) is etched through the full depth d3.

FIG. 1F shows the exemplary wafer of FIG. 1E following a continuation of the etching process until the wafer surface areas of widths w1 and w2 are etched through the full depth d3. Once a wafer surface area is fully etched to form a trench-like structure, continued exposure of the trench-like structure to the etching environment may cause byproducts of the etching process to settle on surfaces within the trench-like structure, thereby forming sidewall deposition. For example, because the trench-like structures associated with the wafer surface areas of widths w3 and w2 continue to be exposed to the etching process after they are fully etched, sidewall deposition 109 and 111, respectively, may occur therein. Consequently, due to the sidewall deposition 109/111, critical dimensions CD2 and CD1 of resulting gate electrode features may be unsatisfactory.

The present invention provides layout and wafer fabrication methodology embodiments that recognize and prevent undesirable effects resulting from variation in microloading across a given layout to be fabricated on a wafer. For example, in one embodiment, a method is disclosed herein for microloading variation control to limit critical dimension variance in a subtractive etch wafer fabrication process. This particular method involves control of sizing and placement of exposed and etchable wafer surface areas around features to be defined on the wafer, i.e., around features to be left on the wafer through subtractive etching of material present within the exposed and etchable wafer surface areas.

FIG. 2A is an illustration showing a flowchart of a method for controlling microloading variation in a layout, in accordance with one embodiment of the present invention. The method includes an operation 220 for identifying problematic open areas in a layout that are sized sufficiently different from neighboring open areas in the layout so as to cause adverse microloading variation. For example, FIG. 2B shows a layout that includes a number of linear shaped features 201 placed in pairs in an array-like manner. Specifically, each pair of closely spaced adjacent linear shaped features 201 are separated from each other by a distance 205. Also, each pair of closely spaced adjacent linear shaped features 201 are separated from neighboring pairs of closely spaced adjacent linear shaped features 201 by distances 207 and 203. The separation distance 207 extends perpendicularly between linear shaped features 201 within a given row of linear shaped features 201, where the exemplary layout of FIG. 2B includes rows 240, 241, 242, 243 of linear shaped features 201. The separation distance 203 extends between ends of linear shaped features 201 in adjacent rows 240, 241, 242, 243.

Because the linear shaped features 201 in adjacent rows 240, 241, 242, 243 are placed in an end-to-end manner, the separation distance 207 forms a problematic open area 209 that extends parallel to the linear shaped features 201 and that is sized sufficiently different from the separation distance 205 of neighboring open areas so as to cause adverse microloading variation within the layout. It should be appreciated that separation distance 207 may already be set at a minimum allowable size given layout rules associated with electrostatic discharge. Therefore, it may not be possible to simply reduce the separation distance 207 in an attempt to reduce the microloading variation within the layout. However, the method includes another operation 222 for repositioning a number of layout features to interdict the identified problematic open areas as identified in operation 220. It should be understood that interdiction of the identified problematic open areas with repositioned layout features will serve to reduce a variance in open area size within the layout, and thereby serve to reduce the variation in microloading within the layout.

FIG. 2C shows the layout of FIG. 2B with the linear shaped features 201 in each of rows 241 and 243 shifted to interdict the problematic open area 209. As a result, the problematic open area 209 is eliminated in exchange for an open area 211 having a size smaller than the problematic open area 209. Therefore, with the linear shaped features 201 in each of rows 241 and 243 shifted to interdict the problematic open area 209, the microloading variation within the layout is reduced, thereby providing a corresponding reduction in the potential for adverse effects on critical dimension.

FIG. 3A is an illustration showing a flowchart of a method for utilizing dummy layout features to control microloading variation in a layout, in accordance with another embodiment of the present invention. The method includes an operation 301 for identifying problematic open areas in a layout that are sized sufficiently different from neighboring open areas in the layout so as to cause adverse microloading variation. For example, FIG. 3B shows a gate level layout that includes a pair of linear gate electrode features 321A placed within an isolation guard ring 323, wherein the isolation guard ring 323 is defined within the substrate. A number of additional linear gate electrode features 321B are defined outside of the isolation guard ring 323.

Within the gate level layout of FIG. 3B, the linear gate electrodes 321A within the isolation guard ring 323 are separated from the linear gate electrodes 321B outside the isolation guard ring 323 by an open area defined by distances 325, 327, 329, and 331. Due to sizing differences between this open area and the spacings between adjacently placed linear gate electrode features 321A/321B, there is a potential for adverse microloading variation within the gate level layout. To address this potential for adverse microloading variation, the method of FIG. 3A includes another operation 303 for defining and placing dummy layout features within identified problematic open areas of the layout, so as to shield actual layout features which neighbor the problematic open areas of the layout from the effects of adverse microloading variation. The dummy layout features referred to herein correspond to physical structures defined on the semiconductor wafer that are not connected within an electrical circuit.

For example, FIG. 3C shows the gate level layout of FIG. 3B with a number of dummy layout features 333 defined and placed within the identified problematic open area of the layout, so as to shield actual layout features 321A/321B which neighbor the problematic open area of the layout from the effects of adverse microloading variation. Specifically, dummy layout features 333 are placed next to the gate electrode features 321A/321B and within the problematic open area, such that a spacing between the gate electrode features 321A/321B and their proximally placed dummy layout features 333 are substantially similar to a regular spacing that exists between neighboring gate electrode features 321A and 321B, respectively. Therefore, the problematic open area within the layout of FIG. 3B is reduced in size. Specifically, the open area distances 325, 327, 329, 331 are reduced to distances 325A, 327A, 329A, 331A, respectively.

It should be appreciated that the method of FIG. 3A can be utilized with essentially any layout portion of essentially any chip level in which the layout portion includes a problematic open area large enough to cause adverse microloading variation. Therefore, it should be understood that the particular gate level layout example of FIGS. 3B-3C is provided by way of example for discussion purposes, and is not intended to convey a limitation of the method of FIG. 3A. Generally speaking, the method of FIG. 3A provides for bounding of a problematic open layout area by dummy layout features, such that actual layout features that surround the problematic open layout area are shielded from the effects of adverse microloading variation by the dummy layout features.

FIG. 4A shows a flowchart of a method for utilizing sacrificial layout features to control microloading variation in a layout, in accordance with another embodiment of the present invention. In the method of FIG. 4A, sacrificial layout features correspond to structures that are temporarily defined on the wafer to reduce microloading variation. Thus, sacrificial structures are temporarily fabricated on the wafer to support fabrication of permanent structures corresponding to actual layout features. Following fabrication of the sacrificial structures and permanent structures in a given chip level, the sacrificial structures are removed from the wafer while leaving the permanent structures on the wafer.

The method of FIG. 4A includes an operation 401 for defining a first layout that includes sacrificial layout features. Specifically, the first layout includes layout shapes that correspond to permanent structures to be defined on the wafer, and also includes layout shapes that correspond to sacrificial structures to be defined on the wafer. The layout shapes that correspond to sacrificial structures are defined and placed in the layout so as to reduce or eliminate adverse microloading variation effects and thereby support fabrication of the permanent structures. For example, the sacrificial structures can be defined and placed to limit the variation in size and relative location of open areas in the layout between actual layout features that correspond to permanent structures to be defined on the wafer.

FIG. 5A shows an exemplary final layout to be defined within a target material layer, in accordance with one embodiment of the present invention. The final layout pattern includes linear layout features 540-551. FIG. 5B shows an exemplary first layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 5A. The first layout pattern of FIG. 5B includes a number of linear layout features 501-506. The linear layout features 501-506 actually include portions that will eventually define permanent structures corresponding to layout features 540-551 of the final layout pattern, and sacrificial layout features 530-538 that will define sacrificial structures to assist in fabrication of layout features 540-551 by reducing microloading variation.

With reference back to FIG. 4A, the method proceeds with an operation 403 for fabricating structures corresponding to the first layout in a target material layer on the wafer. It should be understood that the target material layer can correspond to essentially any type of material used in semiconductor fabrication. It should be further understood that the target material layer can correspond to essentially level of a chip defined on the wafer. In one embodiment, the target material layer is formed of an electrically conductive material, such as polysilicon or metal. For example, in one embodiment, the target material layer is formed of polysilicon, such that permanent structures formed on the wafer from the target material define gate electrodes of transistor devices. In another embodiment, the target material layer is formed of an electrically insulating material, i.e., dielectric material.

FIG. 4B is an illustration showing a flowchart of a method for fabricating structures corresponding to the first layout in the target material layer on the wafer, in accordance with operation 403, and in accordance with one embodiment of the present invention. Also, FIGS. 6A-6E show a series of illustrations depicting results of various operations performed in the method of FIG. 4B. Each of FIGS. 6A-6E depicts a vertical cross-section of an exemplary wafer portion 601 corresponding to a view A-A as identified in each of FIGS. 5A-5C.

In the method of FIG. 4B, an operation 421 is performed to deposit a layer of target material on a wafer. In an operation 423, a hardmask material layer is deposited over the target material layer. In an operation 425, a photoresist material layer is deposited over the hardmask material layer. In one embodiment, each of the target material layer, the hardmask material layer, and the photoresist material layer can be deposited on the wafer through a chemical vapor deposition (CVD) process. However, it should be understood that in other embodiments, each of the target material layer, the hardmask material layer, and the photoresist material layer can be respectively deposited through essentially any type of suitable material deposition process. FIG. 6A shows the cross-sectional view A-A following operation 425. Specifically, FIG. 6A shows a target material layer 603 deposited on a wafer 601, a hardmask layer 605 deposited over the target material layer 603, and a photoresist layer 607 deposited over the hardmask layer 605.

The method continues with an operation 427 for defining the first layout pattern within the photoresist material layer, such that the first layout pattern as defined within the patterned photoresist material layer can be transferred to the hardmask material layer. For example, in one embodiment the photoresist material layer is exposed to a light pattern corresponding to the first layout pattern. Then the photoresist material layer is developed such that the remaining photoresist material includes exposed areas that correspond to the first layout pattern. FIG. 6B shows the cross-sectional view A-A following operation 427.

An operation 429 is then performed to etch through the hardmask material layer within the exposed areas of the patterned photoresist material. FIG. 6C shows the cross-sectional view A-A following operation 429. Then, in an operation 431, the remaining photoresist material is removed. In this manner the first layout pattern is etched within the hardmask material layer. FIG. 6D shows the cross-sectional view A-A following operation 431. An operation 433 is then performed to etch through the conductive material layer within areas exposed through the patterned hardmask material, thereby defining the first layout pattern within the conductive material layer, including the sacrificial layout features. FIG. 6E shows the cross-sectional view A-A following operation 433.

With reference back to the method of FIG. 4A, following the operation 403, the method proceeds with an operation 405 for defining a second layout to remove the sacrificial structures from the target material layer. Also, if required, the second layout is further defined to cut structures within the target material layer, thereby leaving the desired permanent structures. Therefore, the second layout includes openings defined to uncover the sacrificial structures fabricated in the target material layer and, if required, to cut otherwise permanent structures fabricated in the target material layer.

FIG. 5C shows an exemplary second layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 5A. The second layout pattern of FIG. 5C includes a number of openings 513-518. It should be understood that the linear layout shapes 501-506 are shown in FIG. 5C for contextual purposes and are not actually part of the second layout pattern. Specifically, the second layout pattern in the example of FIG. 5C is defined by the cross-hatched opening shapes 513-518. The openings 513 and 518 in the second layout are defined to enable cutting of structures within the target material layer. The openings 514, 515, 516, 517 are defined to expose the sacrificial structures 531, 532, 534, 536, respectively, so that they can be removed from the target material layer.

With reference back to FIG. 4A, the method proceeds with an operation 407 for utilizing the second layout to remove the sacrificial structures from the target material layer, and if so defined, to cut other permanent structures within the target material layer. FIG. 4C is an illustration showing a flowchart of a method for utilizing the second layout, in accordance with operation 407, and in accordance with one embodiment of the present invention. An operation 441 is performed to deposit a photoresist material layer over the wafer so as to cover the remaining hardmask material, the remaining target material, and the exposed wafer material underlying the target material. FIG. 6F shows the cross-sectional view A-A following operation 441. As shown, a photoresist material 609 is deposited over the wafer so as to cover the remaining hardmask material 605, the remaining target material 603, and the exposed wafer 601 underlying the target material.

An operation 443 is then performed to define the second layout within the photoresist material layer, wherein the second layout includes openings to expose the sacrificial structures in the target material layer, and if so defined, to expose cut portions of other permanent structures within the target material layer. FIG. 6G shows the cross-sectional view A-A following operation 443. As shown, the photoresist material 609 is patterned to create open areas which expose sacrificial features 532 and 534.

An operation 445 is then performed to subtractively etch the hardmask material portions and target material portions within the openings in the patterned photoresist material corresponding to the second layout. FIG. 6H shows the cross-sectional view A-A following operation 445. As shown, the hardmask material 605 and target material 603 within the openings in the patterned photoresist material 609 are removed through subtractive etching. An operation 447 is then performed to remove the remaining photoresist material and the remaining hardmask material from the wafer. FIG. 6I shows the cross-sectional view A-A following operation 447. As shown, the remaining photoresist material 609 and the remaining hardmask material 605 are removed through subtractive etching, thereby leaving the target material 603 corresponding to permanent structures 546, 547, 549, and 550. As previously mentioned, the final layout pattern of FIG. 5A represents the permanent structures formed on the wafer from the target material.

In one embodiment, the first layout referenced in operations 401 and 403 of the method of FIG. 4A includes all layout features corresponding to the permanent structures to be defined on the wafer, in addition to a number of layout features corresponding to appropriate sacrificial structures. In another embodiment, a multiple patterning technique is utilized in which the permanent structures to be defined in the target material layer are split among a plurality of layouts. In this embodiment, defining the first layout in operation 401 includes defining each of the plurality of layouts among which the permanent structures to be defined in the target material layer are split. Also in this embodiment, defining the first layout within the photoresist material layer, as recited in operation 427 of FIG. 4B, includes successively defining within the photoresist material layer each of the plurality of layouts among which the permanent structures to be defined in the target material layer are split. Therefore, it should be understood that the method for utilizing sacrificial layout features to control microloading variation in a layout, as described with regard to FIGS. 4A-4C, can be equally implemented in conjunction with a multiple patterning technique.

FIGS. 7A-7C illustrate another exemplary application of the method for utilizing sacrificial layout features to control microloading variation in a layout, as described with regard to FIGS. 4A-4C, in accordance with one embodiment of the present invention. FIG. 7A shows an exemplary final layout to be defined within a target material layer. The final layout pattern includes linear layout features 731 and 733. In one embodiment, the linear layout features 731 and 733 correspond to linear gate electrode features defined within the gate level of a chip. The linear layout features 733 are defined and placed inside of an isolation ring 741, whereas the linear layout features 731 are defined outside of the isolation ring 741. The open area of the layout between the linear layout features 731 and the linear layout features 733 may represent a substantial variation in microloading. The microloading variation in the layout of FIG. 7A can avoided by utilizing sacrificial layout features as provided in the methods of FIGS. 4A-4C.

Specifically, FIG. 7B shows an exemplary first layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 7A. The first layout pattern of FIG. 7B includes a number of linear layout features 701-716. Portions of the linear layout features 701-716 will define permanent structures corresponding to layout features 731 and 733 of the final layout pattern of FIG. 7A, and other portions of the linear layout features 701-716 will define sacrificial layout features to assist in fabrication of layout features 731 and 733 by reducing microloading variation.

FIG. 7C shows an exemplary second layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 7A. The second layout pattern of FIG. 7C includes a number of openings 721, 723, 725, 727, and 729. It should be understood that the linear layout shapes 701-716 are shown in FIG. 7C for contextual purposes and are not actually part of the second layout pattern. Specifically, the second layout pattern in the example of FIG. 7C is defined by the cross-hatched opening shapes 721, 723, 725, 727, and 729. Each of the openings 721, 723, 725, 727, and 729 in the second layout are defined to enable cutting of structures formed within the target material layer using the first layout pattern of FIG. 7B. Specifically, the openings 721, 723, 725, 727, and 729 are defined to expose sacrificial portions of the linear layout features 701-716 so that they can be removed from the target material layer through the subtractive etching process of operation 407 of the method of FIG. 4A.

FIGS. 8A-8C illustrate another exemplary application of the method for utilizing sacrificial layout features to control microloading variation in a layout, as described with regard to FIGS. 4A-4C, in accordance with one embodiment of the present invention. FIG. 8A shows an exemplary final layout to be defined within a target material layer. The final layout pattern includes linear layout features 831-838. In one embodiment, the linear layout features 831-838 correspond to linear gate electrode features defined within the gate level of a chip. The open area 841 of the layout between the linear layout features 831-838 may represent a substantial variation in microloading. The microloading variation in the layout of FIG. 8A can avoided by utilizing sacrificial layout features as provided in the methods of FIGS. 4A-4C.

Specifically, FIG. 8B shows an exemplary first layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 8A. The first layout pattern of FIG. 8B includes a number of linear layout features 801-815. Portions of the linear layout features 803, 805, 811, and 813 will define permanent structures corresponding to layout features 831-838 of the final layout pattern of FIG. 8A, and the linear layout features 801-802, 804, 806-810, 812, and 814-815 define sacrificial layout features to assist in fabrication of layout features 831-838 by reducing microloading variation.

FIG. 8C shows an exemplary second layout pattern that can be used in conjunction with the method of FIG. 4A to fabricate the final layout pattern of FIG. 8A. The second layout pattern of FIG. 8C includes an opening 821. It should be understood that the linear layout shapes 801-815 are shown in FIG. 8C for contextual purposes and are not actually part of the second layout pattern. Specifically, the second layout pattern in the example of FIG. 8C is defined by the cross-hatched opening shape 821. The opening 821 in the second layout is defined to enable cutting of structures formed within the target material layer using the first layout pattern of FIG. 8B, and to remove sacrificial layout structures formed within the target material layer using the first layout pattern of FIG. 8B. Specifically, portions of structures 803, 805, 811, and 813 are exposed within the opening 821 so that they can be removed from the target material layer through the subtractive etching process of operation 407 of the method of FIG. 4A, thereby cutting structures 803, 805, 811, and 813 to form structures 831-838. Also, sacrificial structures 801-802, 804, 806-810, 812, and 814-815 are fully exposed within the opening 821 so that they can be fully removed from the target material layer through the subtractive etching process of operation 407 of the method of FIG. 4A.

It should be understood that the methods described herein can be utilized to control microloading variation in essentially any subtractive etch semiconductor fabrication process. Moreover, it should be appreciated and understood that the methods described herein can also be utilized in conjunction with essentially any type of damascene semiconductor fabrication process. Additionally, the methods disclosed herein for reducing microloading variation in a layout can be implemented to enable adjustment of an etch process to focus more on across-wafer uniformity. Specifically, wafer fabrication etch recipes and chamber hardware are designed to allow a trade-off between across-wafer uniformity versus microloading. With the methods disclosed herein for reducing microloading, the etch process can be modified to improve across-wafer uniformity. For example, using the methods disclosed herein to handle reduction of microloading it is possible to modify the etch process to reduce across-wafer non-uniformity by about one-half, e.g., from about 2% non-uniformity to about 1% non-uniformity.

It should be understood that the layouts associated with the methods disclosed herein can be stored in a tangible form, such as in a digital format on a computer readable medium. For example, the layouts defined in accordance with the methods disclosed herein can be stored in a layout data file as part of one or more cells, selectable from one or more libraries of cells. The layout data file can be formatted as a GDS II (Graphic Data System) database file, an OASIS (Open Artwork System Interchange Standard) database file, or any other type of data file format suitable for storing and communicating semiconductor device layouts. Also, the layouts can be included within a multi-level layout of a larger semiconductor device. The multi-level layout of the larger semiconductor device can also be stored in the form of a layout data file, such as those identified above.

Also, the methods disclosed herein can be embodied as computer readable code, i.e., program instructions, on a computer readable medium. Also, the computer readable code can include the layout data file within which layouts are stored. The computer readable code can further include program instructions for selecting one or more layout libraries and/or cells that include the layouts. The layout libraries and/or cells can also be stored in a digital format on a computer readable medium.

The computer readable medium mentioned herein is any data storage device that can store data which can thereafter be read by a computer system. Examples of the computer readable medium include hard drives, network attached storage (NAS), read-only memory, random-access memory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes, and other optical and non-optical data storage devices. The computer readable medium can also be distributed over a network of coupled computer systems so that the computer readable code is stored and executed in a distributed fashion.

Any of the operations described herein that form part of the invention are useful machine operations. The invention also relates to a device or an apparatus for performing these operations. The apparatus may be specially constructed for the required purpose, such as a special purpose computer. When defined as a special purpose computer, the computer can also perform other processing, program execution or routines that are not part of the special purpose, while still being capable of operating for the special purpose. Alternatively, the operations may be processed by a general purpose computer selectively activated or configured by one or more computer programs stored in the computer memory, cache, or obtained over a network. When data is obtained over a network the data maybe processed by other computers on the network, e.g., a cloud of computing resources.

The embodiments of the present invention can also be defined as a machine that transforms data from one state to another state. The data may represent an article, that can be represented as an electronic signal and electronically manipulate data. The transformed data can, in some cases, be visually depicted on a display, representing the physical object that results from the transformation of data. The transformed data can be saved to storage generally, or in particular formats that enable the construction or depiction of a physical and tangible object. In some embodiments, the manipulation can be performed by a processor. In such an example, the processor thus transforms the data from one thing to another. Still further, the methods can be processed by one or more machines or processors that can be connected over a network. Each machine can transform data from one state or thing to another, and can also process data, save data to storage, transmit data over a network, display the result, or communicate the result to another machine.

It should be further understood that the layouts defined in accordance with the methods disclosed herein can be manufactured as part of a semiconductor device or chip. In the fabrication of semiconductor devices such as integrated circuits, memory cells, and the like, a series of manufacturing operations are performed to define features on a semiconductor wafer. The wafer includes integrated circuit devices in the form of multi-level structures defined on a silicon substrate. At a substrate level, transistor devices with diffusion regions are formed. In subsequent levels, interconnect metallization lines are patterned and electrically connected to the transistor devices to define a desired integrated circuit device. Also, patterned conductive layers are insulated from other conductive layers by dielectric materials.

While this invention has been described in terms of several embodiments, it will be appreciated that those skilled in the art upon reading the preceding specifications and studying the drawings will realize various alterations, additions, permutations and equivalents thereof. Therefore, it is intended that the present invention includes all such alterations, additions, permutations, and equivalents as fall within the true spirit and scope of the invention.

Claims

1. A method for controlling microloading variation in a semiconductor wafer layout, comprising:

identifying, by using a computer, a first open area in a layout having a size variation relative to one or more neighboring open areas of the layout sufficient to cause adverse microloading variation, the first open area located between layout features of a first set of linear-shaped conductive structures and layout features of a second set of linear-shaped conductive structures, each layout feature of the first and second sets of linear-shaped conductive structures oriented to extend lengthwise in a first direction, end-by-end positioned layout features of the first set of linear-shaped conductive structures separated by a first distance as measured in the first direction, side-by-side positioned layout features of the first set of linear-shaped conductive structures separated by a second distance as measured in a second direction perpendicular to the first direction; and

defining and placing dummy layout features, by using the computer, within the first open area so as to shield layout features of the first set of linear-shaped conductive structures from adverse microloading variation, wherein each dummy layout feature is defined to form a corresponding physical structure having a linear-shape extending lengthwise in the first direction, and wherein each physical structure corresponding to a given dummy layout feature is not connected within an electrical circuit, and wherein each dummy layout feature that is positioned end-by-end with a given layout feature of any of the first set of linear-shaped conductive structures is separated from the given layout feature by the first distance as measured in the first direction, and wherein each dummy layout feature that is positioned side-by-side with a given layout feature of any of the first set of linear-shaped conductive structures is separated from the given layout feature by the second distance as measured in the second direction,

wherein the dummy layout features are defined and placed around the first open area on each of four perpendicularly related sides of the first open area to provide for shielding of the layout features of the first set of linear-shaped conductive structures neighboring the first open area, wherein multiple dummy layout features are placed along each of the four perpendicularly related sides of the first open area; and

recording the layout in a digital format on a computer readable medium for fabrication.

2. The method of claim 1, wherein microloading variation is a variation in size and location of material areas to be etched from a semiconductor wafer.

3. The method of claim 2, wherein the adverse microloading variation is an unacceptable variation in etch rate between different locations on the semiconductor wafer.

4. The method of claim 1, wherein an open area in a layout is a space between layout shapes to be lithographically resolved during fabrication.

5. The method of claim 1, wherein the digital format is a data file format for storing and communicating one or more semiconductor device layouts.

6. The method of claim 1, wherein the computer readable medium includes program instructions for accessing and retrieving the layout in the digital format from the computer readable medium.

7. The method of claim 6, wherein the program instructions for accessing and retrieving include program instructions for selecting a library, a cell, or both library and cell including the layout in the digital format.

8. The method of claim 1, wherein end-by-end positioned layout features of the second set of linear-shaped conductive structures are separated by a third distance as measured in the first direction.

9. The method of claim 8, wherein side-by-side positioned layout features of the second set of linear-shaped conductive structures separated by a fourth distance as measured in the second direction perpendicular to the first direction.

10. The method of claim 9, wherein each dummy layout feature that is positioned end-by-end with a given layout feature of any of the second set of linear-shaped conductive structures is separated from the given layout feature by the third distance as measured in the first direction.

11. The method of claim 10, wherein each dummy layout feature that is positioned side-by-side with a given layout feature of any of the second set of linear-shaped conductive structures is separated from the given layout feature by the fourth distance as measured in the second direction.

12. The method of claim 11, wherein the layout features of the first set of linear-shaped conductive structures are positioned inside of an isolation guard ring, and the layout features of the second set of linear-shaped conductive structures are positioned outside of the isolation guard ring.

13. The method of claim 1, wherein the layout features of the first set of linear-shaped conductive structures are positioned inside of an isolation guard ring, and the layout features of the second set of linear-shaped conductive structures are positioned outside of the isolation guard ring.

14. A semiconductor device, comprising:

a first set of linear-shaped conductive structures, each of the first set of linear-shaped conductive structures oriented to extend lengthwise in a first direction, wherein end-by-end positioned ones of the first set of linear-shaped conductive structures are separated by a first distance as measured in the first direction, wherein side-by-side positioned ones of the first set of linear-shaped conductive structures are separated by a second distance as measured in a second direction perpendicular to the first direction;

a second set of linear-shaped conductive structures, each of the second set of linear-shaped conductive structures oriented to extend lengthwise in the first direction, the second set of linear-shaped conductive structures separated from the first set of linear-shaped conductive structures by a first area that does not include functional conductive structures;

dummy structures positioned within the first area, wherein each dummy structure has a linear-shape extending lengthwise in the first direction, wherein each dummy structure is not connected within an electrical circuit, wherein each dummy structure that is positioned end-by-end with any given structure of the first set of linear-shaped conductive structures is separated from the given structure by the first distance as measured in the first direction, and wherein each dummy structure that is positioned side-by-side with any given structure of the first set of linear-shaped conductive structures is separated from the given structure by the second distance as measured in the second direction;

wherein the dummy structure are positioned around the first area on each of four perpendicularly related sides of the first area; and

wherein multiple dummy structures are positioned along each of the four perpendicularly related sides of the first area.

15. The semiconductor device of claim 14, wherein end-by-end positioned ones of the second set of linear-shaped conductive structures are separated by a third distance as measured in the first direction.

16. The semiconductor device of claim 15, wherein side-by-side positioned ones of the second set of linear-shaped conductive structures are separated by a fourth distance as measured in the second direction perpendicular to the first direction.

17. The semiconductor device of claim 16, wherein each dummy structure that is positioned end-by-end with any given structure of the second set of linear-shaped conductive structures is separated from the given structure by the third distance as measured in the first direction.

18. The semiconductor device of claim 17, wherein each dummy structure that is positioned side-by-side with any given structure of the second set of linear-shaped conductive structures is separated from the given structure by the fourth distance as measured in the second direction.

19. The semiconductor device of claim 18, wherein the first set of linear-shaped conductive structures are positioned inside of an isolation guard ring, and the second set of linear-shaped conductive structures are positioned outside of the isolation guard ring.

20. The semiconductor device of claim 14, wherein the first set of linear-shaped conductive structures are positioned inside of an isolation guard ring, and the second set of linear-shaped conductive structures are positioned outside of the isolation guard ring.