Patent
   D403337
Priority
Aug 05 1997
Filed
Aug 05 1997
Issued
Dec 29 1998
Expiry
Dec 29 2012
Assg.orig
Entity
unknown
13
3
n/a
The ornamental design for a high conductance low wall deposition upper shield, as shown and described.

FIG. 1 is a perspective view showing the top of a shield of the invention;

FIG. 2 is a perspective view showing the bottom of a shield of the invention;

FIG. 3 is a top view;

FIG. 4 is a bottom view;

FIG. 5 is a side perspective view; and,

FIG. 6 is a cross sectional view along line 6--6 of FIG. 3.

Or, David Tsuenwai

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Patent Priority Assignee Title
5391275, Mar 02 1990 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
5456756, Sep 02 1994 AMD TECHNOLOGIES HOLDINGS, INC ; GLOBALFOUNDRIES Inc Holding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor wafer
5552124, Jun 22 1994 Applied Materials, Inc. Stationary focus ring for plasma reactor
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Executed onAssignorAssigneeConveyanceFrameReelDoc
Aug 05 1997Applied Materials, Inc.(assignment on the face of the patent)
Aug 05 1997OR, DAVID TSUENEWAIApplied Materials, IncASSIGNMENT OF ASSIGNORS INTEREST SEE DOCUMENT FOR DETAILS 0086480607 pdf
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