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Patent
D772824
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Priority
Feb 25 2015
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Filed
Aug 19 2015
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Issued
Nov 29 2016
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Expiry
Nov 29 2031
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Assg.orig
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Entity
unknown
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20
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23
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n/a
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The ornamental design for a reaction tube, as shown and described.
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FIG. 1 is a perspective view of a reaction tube showing my new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a left side elevational view thereof;
FIG. 5 is a right side elevational view thereof;
FIG. 6 is a top plan view thereof; and
FIG. 7 is a bottom plan view thereof.
FIG. 8 is a cross sectional view taken along line 8-8 in FIG. 2 thereof;
FIG. 9 is a cross sectional view taken along line 9-9 in FIG. 2 thereof;
FIG. 10 is a cross sectional view taken along line 10-10 in FIG. 4 thereof; and,
FIG. 11 is a cross sectional view taken along line 11-11 in FIG. 4 thereof.
Yoshida, Hidenari, Taniyama, Tomoshi
Patent |
Priority |
Assignee |
Title |
11542601, |
Feb 09 2016 |
KOKUSAI ELECTRIC CORPORATION |
Substrate processing apparatus and method of manufacturing semiconductor device |
11952664, |
Feb 09 2016 |
KOKUSAI ELECTRIC CORPORATION |
Substrate processing apparatus and method of manufacturing semiconductor device |
D790490, |
Sep 04 2015 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D791090, |
Sep 04 2015 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D842823, |
Aug 10 2017 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D842824, |
Aug 09 2017 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D843958, |
Aug 10 2017 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D853979, |
Dec 27 2017 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D901406, |
Mar 20 2019 |
KOKUSAI ELECTRIC CORPORATION |
Inner tube of reactor for semiconductor fabrication |
D931823, |
Jan 29 2020 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D986826, |
Mar 10 2020 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
ER3440, |
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ER5461, |
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ER707, |
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ER7131, |
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ER7251, |
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ER7371, |
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ER7687, |
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ER8469, |
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ER9216, |
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Patent |
Priority |
Assignee |
Title |
5948300, |
Sep 12 1997 |
Kokusai Semiconductor Equipment Corporation |
Process tube with in-situ gas preheating |
20030221779, |
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20080083372, |
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20090194521, |
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20090250005, |
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D405062, |
Aug 20 1997 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus |
D405429, |
Jan 31 1997 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus |
D405431, |
Aug 20 1997 |
Tokyo Electron Limited |
Tube for use in a semiconductor wafer heat processing apparatus |
D406113, |
Jan 31 1997 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus |
D417438, |
Jan 31 1997 |
Tokyo Electron Limited |
Quartz outer tube |
D423463, |
Jan 31 1997 |
Tokyo Electron Limited |
Quartz process tube |
D424024, |
Jan 31 1997 |
Tokyo Electron Limited |
Quartz process tube |
D521464, |
Nov 04 2003 |
Tokyo Electron Limited |
Process tube for semiconductor device manufacturing apparatus |
D586768, |
Oct 12 2006 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers |
D600659, |
Sep 12 2006 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers |
D610559, |
May 30 2008 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D611013, |
Mar 28 2008 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers |
D618638, |
May 09 2008 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D711843, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D719114, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D720707, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D725055, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
D739832, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
Date |
Maintenance Fee Events |
n/a
Date |
Maintenance Schedule |
n/a