FIG. 1 is a front, top, and right side perspective view of a reaction tube showing our new design;
FIG. 2 is a rear, top and left said perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a right side elevational view thereof;
FIG. 7 is a top plan view thereof;
FIG. 8 is a bottom plan view thereof;
FIG. 9 is a cross sectional view take along line 9-9 in FIG. 3 thereof;
FIG. 10 is a cross sectional view take along line 10-10 in FIG. 3 thereof;
FIG. 11 is a cross sectional view view taken along line 11-11 in FIG. 3 thereof;
FIG. 12 is a cross sectional view view taken along line 12-12 in FIG. 3 thereof;
FIG. 13 is a cross sectional view view taken along line 13-13 in FIG. 6; and,
FIG. 14 is a cross sectional view view taken along line 14-14 in FIG. 6.
| Patent |
Priority |
Assignee |
Title |
| 4950870, |
Nov 21 1987 |
Tokyo Electron Limited |
Heat-treating apparatus |
| 5948300, |
Sep 12 1997 |
Kokusai Semiconductor Equipment Corporation |
Process tube with in-situ gas preheating |
| 6251189, |
Feb 18 1999 |
KOKUSAI ELECTRIC CORPORATION |
Substrate processing apparatus and substrate processing method |
| 20030221779, |
|
|
|
| 20080083372, |
|
|
|
| 20090194521, |
|
|
|
| 20090250005, |
|
|
|
| D405062, |
Aug 20 1997 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus |
| D405429, |
Jan 31 1997 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus |
| D405431, |
Aug 20 1997 |
Tokyo Electron Limited |
Tube for use in a semiconductor wafer heat processing apparatus |
| D406113, |
Jan 31 1997 |
Tokyo Electron Limited |
Processing tube for use in a semiconductor wafer heat processing apparatus |
| D417438, |
Jan 31 1997 |
Tokyo Electron Limited |
Quartz outer tube |
| D423463, |
Jan 31 1997 |
Tokyo Electron Limited |
Quartz process tube |
| D424024, |
Jan 31 1997 |
Tokyo Electron Limited |
Quartz process tube |
| D586768, |
Oct 12 2006 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers |
| D600659, |
Sep 12 2006 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers |
| D610559, |
May 30 2008 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
| D611013, |
Mar 28 2008 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers |
| D618638, |
May 09 2008 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
| D619630, |
May 08 2007 |
Tokyo Electron Limited |
Process tube for manufacturing semiconductor wafers |
| D711843, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
| D719114, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
| D720707, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
| D725053, |
Nov 18 2011 |
Tokyo Electron Limited |
Outer tube for process tube for manufacturing semiconductor wafers |
| D725055, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
| D739832, |
Jun 28 2013 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
| D770993, |
Sep 04 2015 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |
| D772824, |
Feb 25 2015 |
KOKUSAI ELECTRIC CORPORATION |
Reaction tube |